专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090091975A1 Non-volatile memory device and operation method of the same 有权
标题翻译：非易失性存储器件及其操作方法相同
公开(公告)号：US20090091975A1
公开(公告)日：2009-04-09
申请号：US12081679
申请日：2008-04-18
申请人： Tae-hee Lee , Won-joo Kim , Yoon-dong Park , June-mo Koo , Suk-pil Kim , Tae-eung Yoon
发明人： Tae-hee Lee , Won-joo Kim , Yoon-dong Park , June-mo Koo , Suk-pil Kim , Tae-eung Yoon
IPC分类号： G11C16/06
CPC分类号： G11C16/0483 , H01L27/11521 , H01L27/11568
摘要： Provided are a non-volatile memory device and an operation method of the same. The non-volatile memory device may include one or more main strings each of which may include first and second substrings which may separately include a plurality of memory cell transistors; and a charge supply line which may be configured to provide charges to or block charges from the first and second substrings of each of the main strings, wherein each of the main strings may include a first ground selection transistor which may be connected to the first substring; a first substring selection transistor which may be connected to the first ground selection transistor; a second ground selection transistor which may be connected to the second substring; and a second substring selection transistor which may be connected to the second ground selection transistor.
摘要翻译：提供了一种非易失性存储器件及其操作方法。非易失性存储器件可以包括一个或多个主串，每个主弦可以包括可以分别包括多个存储单元晶体管的第一和第二子串; 以及电荷供给线，其可以被配置为向每个主串的第一和第二子串提供电荷或阻止电荷，其中每个主串可以包括第一接地选择晶体管，其可以连接到第一子串 ; 可以连接到第一接地选择晶体管的第一子串选择晶体管; 可以连接到第二子串的第二接地选择晶体管; 以及可以连接到第二接地选择晶体管的第二子串选择晶体管。

2. 发明申请

US20080157182A1 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080157182A1
公开(公告)日：2008-07-03
申请号：US11980632
申请日：2007-10-31
申请人： Seung-hwan Song , Suk-pil Kim , Yoon-dong Park , Won-joo Kim , June-mo Koo , Kyoung-Iae Cho , Jae-Woong Hyun , Sung-jae Byun
发明人： Seung-hwan Song , Suk-pil Kim , Yoon-dong Park , Won-joo Kim , June-mo Koo , Kyoung-Iae Cho , Jae-Woong Hyun , Sung-jae Byun
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L29/785 , H01L21/76897 , H01L29/41791 , H01L29/66795 , H01L29/66825 , H01L29/66833 , H01L29/7851 , H01L29/7881 , H01L29/792 , H01L2029/7858
摘要： Example embodiments relate to a semiconductor device including a fin-type channel region and a method of fabricating the same. The semiconductor device includes a semiconductor substrate, a semiconductor pillar and a contact plug. The semiconductor substrate includes at least one pair of fins used (or functioning) as an active region. The semiconductor pillar may be interposed between portions of the fins to connect the fins. The contact plug may be disposed (or formed) on the semiconductor pillar and electrically connected to top surfaces of the fins.
摘要翻译：示例性实施例涉及包括鳍型沟道区的半导体器件及其制造方法。半导体器件包括半导体衬底，半导体柱和接触插塞。半导体衬底包括至少一对使用（或功能）作为活性区的翅片。半导体柱可以插入翅片的部分之间以连接散热片。接触插塞可以设置（或形成）在半导体柱上并电连接到散热片的顶表面。

3. 发明申请

US20080157176A1 Nonvolatile memory device and method of fabricating the same 失效
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20080157176A1
公开(公告)日：2008-07-03
申请号：US11902511
申请日：2007-09-21
申请人： Won-joo Kim , Yoon-dong Park , June-mo Koo , Suk-pil Kim , Sung-jae Byun
发明人： Won-joo Kim , Yoon-dong Park , June-mo Koo , Suk-pil Kim , Sung-jae Byun
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： H01L27/115 , H01L27/11521 , H01L27/11524 , H01L27/11568 , H01L29/42336 , H01L29/66803
摘要： A nonvolatile memory device having lower bit line contact resistance and a method of fabricating the same is provided. In the nonvolatile memory device, a semiconductor substrate of a first conductivity type may include first and second fins. A common bit line electrode may connect one end of the first fin to one end of the second fin. A plurality of control gate electrodes may cover the first and second fins and expand across the top surface of each of the first and second fins. A first string selection gate electrode may be positioned between the common bit line electrode and the plurality of control gate electrodes. The first string selection gate electrode may cover the first and second fins and expand across the top surface of each of the first and second fins. A second string selection gate electrode may be positioned between the first string selection gate electrode and the plurality of control gate electrodes. The second string selection gate electrode may cover the first and second fins and expand across the top surface of each of the first and second fins. The first fin under the first string selection gate electrode and the second fin under the second string selection gate electrode may have a second conductivity type opposite to the first conductivity type.
摘要翻译：提供一种具有较低位线接触电阻的非易失性存储器件及其制造方法。在非易失性存储器件中，第一导电类型的半导体衬底可以包括第一和第二鳍片。公共位线电极可将第一鳍片的一端连接到第二鳍片的一端。多个控制栅极电极可以覆盖第一和第二鳍片并且跨越第一和第二鳍片中的每一个的顶表面膨胀。第一串选择栅极可以位于公共位线电极和多个控制栅电极之间。第一串选择栅电极可以覆盖第一和第二鳍片并且横跨第一和第二鳍片中的每一个的顶表面扩展。第二串选择栅电极可以位于第一串选择栅电极和多个控制栅电极之间。第二串选择栅电极可以覆盖第一和第二鳍片并且横跨第一和第二鳍片中的每一个的顶表面扩展。第一串选择栅电极下的第一鳍和第二串选择栅电极下的第二鳍可以具有与第一导电类型相反的第二导电类型。

4. 发明申请

US20080135916A1 Non-volatile memory device and method of fabricating the same 失效
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20080135916A1
公开(公告)日：2008-06-12
申请号：US11987008
申请日：2007-11-26
申请人： Won-joo Kim , Yoon-dong Park , June-mo Koo , Suk-pil Kim
发明人： Won-joo Kim , Yoon-dong Park , June-mo Koo , Suk-pil Kim
IPC分类号： H01L21/336 , H01L29/788
CPC分类号： H01L29/7885 , H01L21/28273 , H01L21/28282 , H01L27/115 , H01L29/42328 , H01L29/42332 , H01L29/42336 , H01L29/42344 , H01L29/42352 , H01L29/7887 , H01L29/792 , H01L29/7923
摘要： Provided are example embodiments of a non-volatile memory device and a method of fabricating the same. The non-volatile memory device may include a control gate electrode arranged on a semiconductor substrate, a gate insulating layer interposed between the semiconductor substrate and the control gate electrode, a storage node layer interposed between the gate insulating layer and the control gate electrode, a blocking insulating layer interposed between the storage node layer and the control gate electrode, first dopant doping regions along a first side of the control gate electrode, and second dopant doping regions along a second side of the control gate electrode. The first dopant doping regions may alternate with the second dopant doping regions. Stated differently, each of the second dopant doping regions may be arranged in a region on the second side of the control gate electrode that is adjacent to one of the first dopant doping regions.
摘要翻译：提供了非易失性存储器件的示例性实施例及其制造方法。非易失性存储器件可以包括布置在半导体衬底上的控制栅电极，介于半导体衬底和控制栅电极之间的栅极绝缘层，介于栅极绝缘层和控制栅电极之间的存储节点层，插入在所述存储节点层和所述控制栅电极之间的阻挡绝缘层，沿着所述控制栅电极的第一侧的第一掺杂剂掺杂区域和沿着所述控制栅电极的第二侧的第二掺杂剂掺杂区域。第一掺杂剂掺杂区域可以与第二掺杂剂掺杂区域交替。换句话说，每个第二掺杂剂掺杂区域可以被布置在与第一掺杂剂掺杂区域中的一个相邻的控制栅电极的第二侧上的区域中。

5. 发明申请

US20080123390A1 Non-volatile memory device and method of fabricating the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20080123390A1
公开(公告)日：2008-05-29
申请号：US11882694
申请日：2007-08-03
申请人： Won-joo Kim , Suk-pil Kim , Yoon-dong Park , June-mo Koo
发明人： Won-joo Kim , Suk-pil Kim , Yoon-dong Park , June-mo Koo
IPC分类号： G11C11/00 , H01L21/16
CPC分类号： G11C11/5678 , G11C13/0004 , H01L27/24
摘要： A non-volatile memory device and a method of fabricating the same are provided. In the non-volatile memory device, at least one first semiconductor layer of a first conductivity type may be formed spaced apart from each other on a portion of a substrate. A plurality of first resistance variation storage layers may contact first sidewalls of each of the at least one first semiconductor layer. A plurality of second semiconductor layers of a second conductivity type, opposite to the first conductivity type, may be interposed between the first sidewalls of each of the at least one first semiconductor layer and the plurality of first resistance variation storage layers. A plurality of bit line electrodes may be connected to each of the plurality of first resistance variation storage layers.
摘要翻译：提供了一种非易失性存储器件及其制造方法。在非易失性存储器件中，第一导电类型的至少一个第一半导体层可以在衬底的一部分上彼此间隔开形成。多个第一电阻变化存储层可以接触至少一个第一半导体层中的每一个的第一侧壁。与第一导电类型相反的第二导电类型的多个第二半导体层可以插入在至少一个第一半导体层和多个第一电阻变化存储层中的每一个的第一侧壁之间。多个位线电极可以连接到多个第一电阻变化存储层中的每一个。

6. 发明授权

US08017991B2 Non-volatile memory device and methods of operating and fabricating the same 失效
标题翻译：非易失性存储器件及其操作和制造方法
公开(公告)号：US08017991B2
公开(公告)日：2011-09-13
申请号：US11724290
申请日：2007-03-15
申请人： Won-joo Kim , Suk-pil Kim , Yoon-dong Park , June-mo Koo
发明人： Won-joo Kim , Suk-pil Kim , Yoon-dong Park , June-mo Koo
IPC分类号： H01L29/788
CPC分类号： H01L29/42352 , H01L21/28273 , H01L21/28282 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/42336
摘要： Example embodiments provide a non-volatile memory device with increased integration and methods of operating and fabricating the same. A non-volatile memory device may include a plurality of first storage node films and a plurality of first control gate electrodes on a semiconductor substrate. A plurality of second storage node films and a plurality of second control gate electrodes may be recessed into the semiconductor substrate between two adjacent first control gate electrodes and below the bottom of the plurality of first control gate electrodes. A plurality of bit line regions may be on the semiconductor substrate and each may extend across the plurality of first control gate electrodes and the plurality of second control gate electrodes.
摘要翻译：示例性实施例提供了具有增加的集成的非易失性存储器件及其操作和制造方法。非易失性存储器件可以包括多个第一存储节点膜和半导体衬底上的多个第一控制栅电极。多个第二存储节点膜和多个第二控制栅电极可以凹入到两个相邻的第一控制栅电极之间并且在多个第一控制栅电极的底部之下的半导体衬底中。多个位线区域可以在半导体衬底上，并且每个可以跨越多个第一控制栅极电极和多个第二控制栅电极延伸。

7. 发明授权

US07813180B2 Non-volatile memory devices and methods of operating the same 失效
标题翻译：非易失性存储器件及其操作方法
公开(公告)号：US07813180B2
公开(公告)日：2010-10-12
申请号：US12005376
申请日：2007-12-27
申请人： Won-joo Kim , Yoon-dong Park , June-mo Koo , Suk-pil Kim , Tae-hee Lee
发明人： Won-joo Kim , Yoon-dong Park , June-mo Koo , Suk-pil Kim , Tae-hee Lee
IPC分类号： G11C7/00
CPC分类号： H01L29/7881 , G11C16/3418 , H01L27/115 , H01L27/11521 , H01L29/42328 , H01L29/42336 , H01L29/66825
摘要： Example embodiment non-volatile memory devices may be capable of increased integration and reliability and may provide example methods of operating non-volatile memory devices. Example embodiment non-volatile memory devices may include a first control gate electrode on a semiconductor substrate. A first charge storing layer may be between the semiconductor substrate and the first control gate electrode. A source region may be defined in the semiconductor substrate at one side of the first control gate electrode. A first auxiliary gate electrode may be at the other side of the first control gate electrode and may be recessed into the semiconductor substrate. A first drain region may be defined in the semiconductor substrate at one side of the first auxiliary gate electrode opposite to the first control gate electrode. A bit line may be connected to the first drain region.
摘要翻译：示例性实施例非易失性存储器设备可能能够提高集成度和可靠性，并且可以提供操作非易失性存储器设备的示例性方法。示例性实施例非易失性存储器件可以包括半导体衬底上的第一控制栅电极。第一电荷存储层可以在半导体衬底和第一控制栅电极之间。源区域可以在第一控制栅电极的一侧的半导体衬底中限定。第一辅助栅电极可以在第一控制栅电极的另一侧，并且可以凹入到半导体衬底中。第一漏极区域可以在第一辅助栅电极的与第一控制栅电极相对的一侧的半导体衬底中限定。位线可以连接到第一漏区。

8. 发明授权

US07700935B2 Non-volatile memory device and method of fabricating the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US07700935B2
公开(公告)日：2010-04-20
申请号：US11882694
申请日：2007-08-03
申请人： Won-joo Kim , Suk-pil Kim , Yoon-dong Park , June-mo Koo
发明人： Won-joo Kim , Suk-pil Kim , Yoon-dong Park , June-mo Koo
IPC分类号： H01L47/00
CPC分类号： G11C11/5678 , G11C13/0004 , H01L27/24
摘要： A non-volatile memory device and a method of fabricating the same are provided. In the non-volatile memory device, at least one first semiconductor layer of a first conductivity type may be formed spaced apart from each other on a portion of a substrate. A plurality of first resistance variation storage layers may contact first sidewalls of each of the at least one first semiconductor layer. A plurality of second semiconductor layers of a second conductivity type, opposite to the first conductivity type, may be interposed between the first sidewalls of each of the at least one first semiconductor layer and the plurality of first resistance variation storage layers. A plurality of bit line electrodes may be connected to each of the plurality of first resistance variation storage layers.
摘要翻译：提供了一种非易失性存储器件及其制造方法。在非易失性存储器件中，第一导电类型的至少一个第一半导体层可以在衬底的一部分上彼此间隔开形成。多个第一电阻变化存储层可以接触至少一个第一半导体层中的每一个的第一侧壁。与第一导电类型相反的第二导电类型的多个第二半导体层可以插入在至少一个第一半导体层和多个第一电阻变化存储层中的每一个的第一侧壁之间。多个位线电极可以连接到多个第一电阻变化存储层中的每一个。

9. 发明授权

US07560344B2 Semiconductor device having a pair of fins and method of manufacturing the same 失效
公开(公告)号：US07560344B2
公开(公告)日：2009-07-14
申请号：US11976004
申请日：2007-10-19
申请人： Suk-pil Kim , Yoon-dong Park , Jong-jin Lee , Won-joo Kim , June-mo Koo , Seung-hwan Song
发明人： Suk-pil Kim , Yoon-dong Park , Jong-jin Lee , Won-joo Kim , June-mo Koo , Seung-hwan Song
IPC分类号： H01L21/336
CPC分类号： H01L21/28273 , H01L21/28282 , H01L29/66795 , H01L29/66825 , H01L29/66833 , H01L29/785 , H01L29/7881 , H01L29/792
摘要： Example embodiments relate to a semiconductor device and a method of manufacturing the same. A semiconductor device according to example embodiments may have reduced disturbances during reading operations and a reduced short channel effect. The semiconductor device may include a semiconductor substrate having a body and a pair of fins protruding from the body. Inner spacer insulating layers may be formed on an upper portion of an inner sidewall of the pair of fins so as to reduce the entrance to the region between the pair of fins. A gate electrode may cover a portion of the external sidewalls of the pair of fins and may extend across the inner spacer insulating layers so as to define a void between the pair of fins. Gate insulating layers may be interposed between the gate electrode and the pair of fins.

10. 发明申请

US20080191263A1 Nonvolatile memory devices and methods of fabricating the same 审中-公开
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20080191263A1
公开(公告)日：2008-08-14
申请号：US11980419
申请日：2007-10-31
申请人： Won-joo Kim , June-mo Koo , Suk-pil Kim , Yoon-dong Park
发明人： Won-joo Kim , June-mo Koo , Suk-pil Kim , Yoon-dong Park
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L29/792 , H01L27/11521 , H01L27/11556 , H01L27/11568 , H01L29/40114 , H01L29/40117 , H01L29/42332 , H01L29/42348 , H01L29/7881 , H01L29/7926
摘要： Provided are a nonvolatile memory device and a method of fabricating the same in which a channel length is effectively increased and high-integration may be possible. In the nonvolatile memory device, a semiconductor device may include an active region defined by a device isolation film. The active region may include at least one projecting portion. A pair of control gate electrodes may cover both side surfaces of the at least one projecting portion, and may be spaced apart from each other. A pair of charge storage layers may be between both side surfaces of the at least one projecting portion and the pair of control gate electrodes.
摘要翻译：提供一种非易失性存储器件及其制造方法，其中沟道长度被有效地增加并且高集成度是可能的。在非易失性存储器件中，半导体器件可以包括由器件隔离膜限定的有源区。有源区域可以包括至少一个突出部分。一对控制栅电极可以覆盖至少一个突出部分的两个侧表面，并且可以彼此间隔开。一对电荷存储层可以位于至少一个突出部分的两个侧表面和一对控制栅极电极之间。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式