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    • 1. 发明授权
    • Thin film type solar cell and method for manufacturing the same
    • 薄膜型太阳能电池及其制造方法
    • US08563846B2
    • 2013-10-22
    • US12811085
    • 2008-12-29
    • Won Seok ParkYong Woo ShinSeong Ryong Hwang
    • Won Seok ParkYong Woo ShinSeong Ryong Hwang
    • H02N6/00H01L31/042H01L31/00H01L21/00
    • H01L31/18H01L31/046Y02E10/50
    • A thin film type solar cell and a method for manufacturing the same is disclosed, the thin film type solar cell comprising a substrate; a plurality of front electrodes on the substrate at fixed intervals by each first separating part interposed in-between; a plurality of semiconductor layers on the front electrodes at fixed intervals by each contact part interposed in-between; and a plurality of rear electrodes connected with the front electrodes through the contact part, provided at fixed intervals by each second separating part interposed in-between, wherein a main isolating part is formed in the outermost front electrode, the outermost semiconductor layer, and the outermost rear electrode, wherein an auxiliary isolating part is formed in at least one of the outermost front electrode and the outermost rear electrode, wherein the auxiliary isolating part is positioned on the inside of the main isolating part.
    • 公开了一种薄膜型太阳能电池及其制造方法,所述薄膜型太阳能电池包括基板; 多个前电极以固定的间隔被插入其间的每个第一分离部分组成; 固定间隔的前部电极上的多个半导体层由插入其间的每个接触部分构成; 以及多个后电极,通过所述接触部与所述前电极连接,所述接触部通过设置在其间的每个第二分离部以固定间隔设置,其中,在最外侧前电极,最外侧半导体层和 最外侧电极,其中在最外侧前电极和最外侧电极中的至少一方形成有辅助隔离部,其中,所述辅助隔离部位于所述主隔离部的内侧。
    • 2. 发明申请
    • Thin Film Type Solar Cell and Method for Manufacturing the Same
    • 薄膜型太阳能电池及其制造方法
    • US20100282303A1
    • 2010-11-11
    • US12811085
    • 2008-12-29
    • Won Seok ParkYong Woo ShinSeong Ryong Hwang
    • Won Seok ParkYong Woo ShinSeong Ryong Hwang
    • H01L31/0248H01L31/18
    • H01L31/18H01L31/046Y02E10/50
    • A thin film type solar cell and a method for manufacturing the same is disclosed, the thin film type solar cell comprising a substrate; a plurality of front electrodes on the substrate at fixed intervals by each first separating part interposed in-between; a plurality of semiconductor layers on the front electrodes at fixed intervals by each contact part interposed in-between; and a plurality of rear electrodes connected with the front electrodes through the contact part, provided at fixed intervals by each second separating part interposed in-between, wherein a main isolating part is formed in the outermost front electrode, the outermost semiconductor layer, and the outermost rear electrode, wherein an auxiliary isolating part is formed in at least one of the outermost front electrode and the outermost rear electrode, wherein the auxiliary isolating part is positioned on the inside of the main isolating part.
    • 公开了一种薄膜型太阳能电池及其制造方法,所述薄膜型太阳能电池包括基板; 多个前电极以固定的间隔被插入其间的每个第一分离部分组成; 固定间隔的前部电极上的多个半导体层由插入其间的每个接触部分构成; 以及多个后电极,通过所述接触部与所述前电极连接,所述接触部通过设置在其间的每个第二分离部以固定的间隔设置,其中,在最外侧前电极,最外侧半导体层和 最外侧电极,其中在最外侧前电极和最外侧电极中的至少一方形成有辅助隔离部,其中,所述辅助隔离部位于所述主隔离部的内侧。
    • 6. 发明授权
    • Molding heater for heating semiconductor wafer and fabrication method thereof
    • 用于加热半导体晶片的成型加热器及其制造方法
    • US06835917B2
    • 2004-12-28
    • US10295901
    • 2002-11-18
    • Yong Woo Shin
    • Yong Woo Shin
    • H05B368
    • H01L21/67103H05B3/72
    • A molding heater includes a first metal plate having a recess formed on one side and a flat surface formed at the other side. A groove is formed at a lower portion of the recess and a wafer is placed on the flat surface. A hot wire is inserted into the groove. A ceramic is filled in a gap between the hot wire and the groove. A second metal plate coupled with the first metal plate fills the recess while contacting with the lower portion and lateral sides of the recess. Since the hot wire is surrounded only with a single layer of the ceramic, a resistance of the heat conduction can be minimized. Accordingly, a sufficient calorific power can be obtained through the metal plates using even a small power and a short of the hot wire due to an overload can be prevented.
    • 成型加热器包括:第一金属板,其具有形成在一侧的凹部和在另一侧形成的平坦表面。 在凹部的下部形成凹槽,并且将晶片放置在平坦表面上。 将热丝插入槽中。 陶瓷填充在热丝和槽之间的间隙中。 与第一金属板联接的第二金属板在与凹部的下部和侧边接触的同时填充凹部。 由于热丝仅用陶瓷单层包围,所以可以使热传导阻力最小化。 因此,能够通过使用小功率的金属板获得足够的发热量,并且可以防止由于过载导致的热丝短路。
    • 8. 发明授权
    • Method of cleaning a semiconductor fabricating apparatus
    • US06435197B1
    • 2002-08-20
    • US09794827
    • 2001-02-27
    • Yong Woo ShinChul Ju Hwang
    • Yong Woo ShinChul Ju Hwang
    • B08B600
    • An apparatus for fabricating a semiconductor device includes: a reactive chamber having an inlet and an outlet for a gas and being electrically grounded; a susceptor installed in the reactive chamber for mounting a wafer thereon and being electrically insulated with the reactive chamber; and an RF generator for applying an RF electric power to the susceptor. A method for cleaning the apparatus for fabricating a semiconductor device includes the steps of: injecting a plasma forming gas through the gas inlet; and moving the susceptor in the vertical direction of the face of the wafer while applying the RF electric power to the susceptor, to control the position and the density of the plasma. Since the plasma is formed even at the shadow area, such as the lower space of the susceptor within the reactive chamber where plasma could be hardly formed, there is no need to clean separately the lower space of the reactive chamber. Thus, the cleaning process is simplified. In addition, since the density of the plasma can be easily controlled without increase or decrease of the RF electric power by transferring the susceptor 140 vertically, the inside of the reactive chamber 110 can be uniformly and effectively cleaned with the plasma.