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1. 发明申请

US20100167458A1 Thin film type solar cell and method for manufacturing the same 有权
标题翻译：薄膜型太阳能电池及其制造方法
公开(公告)号：US20100167458A1
公开(公告)日：2010-07-01
申请号：US12460005
申请日：2009-07-10
申请人： Yong Woo Shin , Woo-Hyun Kim , Dae Yup Na , Hyun Jun Cho , Dong Woo Kang , Doo Young Kim , Hyun Kyo Shin , Cheol Hoon Yang
发明人： Yong Woo Shin , Woo-Hyun Kim , Dae Yup Na , Hyun Jun Cho , Dong Woo Kang , Doo Young Kim , Hyun Kyo Shin , Cheol Hoon Yang
IPC分类号： H01L31/18
CPC分类号： H01L31/022425 , H01L31/046 , H01L31/0468 , Y02B10/10 , Y02E10/50
摘要： A thin film type solar cell and a method for manufacturing the same is disclosed, which is capable of providing a wide light-transmission area without lowering cell efficiency and increasing processing time, so that the solar cell can be used as a substitute for a glass window in a building. The thin film type solar cell generally comprises a substrate; a plurality of front electrodes at fixed intervals on the substrate; a plurality of semiconductor layers at fixed intervals with a contact portion or separating channel interposed in-between, the plurality of semiconductor layers on the plurality of front electrodes; and a plurality of rear electrodes at fixed intervals by the each separating channel interposed in-between, the each rear electrode being electrically connected with the each front electrode; wherein the each rear electrode is patterned in such a way that a light-transmitting portion is included in a predetermined portion of the rear electrode.
摘要翻译：公开了一种薄膜型太阳能电池及其制造方法，其能够提供宽的透光面积而不降低电池效率和增加处理时间，使得太阳能电池可用作玻璃的替代品窗户在建筑物。薄膜型太阳能电池通常包括基板; 在所述基板上以固定间隔的多个前电极; 以固定间隔的多个半导体层，其中插入有位于其间的接触部分或分离通道，所述多个前电极上的多个半导体层; 以及通过插入其间的每个分离通道以固定间隔的多个后电极，每个后电极与每个前电极电连接; 其中每个后电极被图案化，使得在后电极的预定部分中包括光透射部分。

2. 发明授权

US08298852B2 Thin film type solar cell and method for manufacturing the same 有权
标题翻译：薄膜型太阳能电池及其制造方法
公开(公告)号：US08298852B2
公开(公告)日：2012-10-30
申请号：US12460005
申请日：2009-07-10
申请人： Yong Woo Shin , Won Hyun Kim , Dae Yup Na , Hyun Jun Cho , Dong Woo Kang , Doo Young Kim , Hyun Kyo Shin , Cheol Hoon Yang
发明人： Yong Woo Shin , Won Hyun Kim , Dae Yup Na , Hyun Jun Cho , Dong Woo Kang , Doo Young Kim , Hyun Kyo Shin , Cheol Hoon Yang
IPC分类号： H01L21/00
CPC分类号： H01L31/022425 , H01L31/046 , H01L31/0468 , Y02B10/10 , Y02E10/50
摘要： A thin film type solar cell and a method for manufacturing the same is disclosed, which is capable of providing a wide light-transmission area without lowering cell efficiency and increasing processing time, so that the solar cell can be used as a substitute for a glass window in a building. The thin film type solar cell generally comprises a substrate; a plurality of front electrodes at fixed intervals on the substrate; a plurality of semiconductor layers at fixed intervals with a contact portion or separating channel interposed in-between, the plurality of semiconductor layers on the plurality of front electrodes; and a plurality of rear electrodes at fixed intervals by the each separating channel interposed in-between, the each rear electrode being electrically connected with the each front electrode; wherein the each rear electrode is patterned in such a way that a light-transmitting portion is included in a predetermined portion of the rear electrode.
摘要翻译：公开了一种薄膜型太阳能电池及其制造方法，其能够提供宽的透光面积而不降低电池效率和增加处理时间，使得太阳能电池可用作玻璃的替代品窗户在建筑物。薄膜型太阳能电池通常包括基板; 在所述基板上以固定间隔的多个前电极; 以固定间隔的多个半导体层，其中插入有位于其间的接触部分或分离通道，所述多个前电极上的多个半导体层; 以及通过插入其间的每个分离通道以固定间隔的多个后电极，每个后电极与每个前电极电连接; 其中每个后电极被图案化，使得在后电极的预定部分中包括光透射部分。

3. 发明申请

US20090111059A1 Patterning Method of Semiconductor Device 失效
标题翻译：半导体器件的图案化方法
公开(公告)号：US20090111059A1
公开(公告)日：2009-04-30
申请号：US12256259
申请日：2008-10-22
申请人： Cheol Hoon Yang
发明人： Cheol Hoon Yang
IPC分类号： G03F7/20
CPC分类号： G03F1/50
摘要： The invention relates to a patterning method of a semiconductor device. In an aspect of the invention, the method may include forming a target etch layer on a semiconductor substrate, forming a photoresist film on the target etch layer, forming photoresist patterns using exposure and development processes employing an exposure mask wherein exposure patterns, each having inclined top corners, are formed, and patterning the target etch layer using an etch process employing the photoresist patterns.
摘要翻译：本发明涉及半导体器件的图案化方法。在本发明的一个方面，该方法可以包括在半导体衬底上形成靶蚀刻层，在目标蚀刻层上形成光致抗蚀剂膜，使用曝光和显影工艺形成光致抗蚀剂图案，其中曝光图案具有倾斜形成顶角，并且使用采用光致抗蚀剂图案的蚀刻工艺对目标蚀刻层进行图案化。

4. 发明授权

US09018034B2 Apparatus and method for manufacturing of thin film type solar cell 有权
标题翻译：薄膜型太阳能电池的制造方法及装置
公开(公告)号：US09018034B2
公开(公告)日：2015-04-28
申请号：US13227978
申请日：2011-09-08
申请人： Cheol Hoon Yang
发明人： Cheol Hoon Yang
IPC分类号： H01L21/00 , H01L31/18 , H01L21/67 , H01L21/677 , H01L31/075 , H01L31/076 , H01L31/0463
CPC分类号： H01L31/18 , H01L21/67028 , H01L21/67051 , H01L21/6708 , H01L21/67173 , H01L21/6776 , H01L31/022425 , H01L31/0463 , H01L31/0468 , H01L31/075 , H01L31/076 , Y02E10/548
摘要： Disclosed is an apparatus and method for manufacturing a thin film type solar cell, which enables the enhancement of productivity, the apparatus for manufacturing a thin film type solar cell including a first electrode forming unit; a first separation part; an optoelectric conversion layer forming unit; a contact line forming unit; a printing unit; and an etching process unit, wherein the etching process unit removes the optoelectric conversion layer in a second separation part to expose the first electrode in the second separation part through a wet etching process.
摘要翻译：公开了一种能够提高生产率的薄膜型太阳能电池的制造装置和方法，包括第一电极形成单元的薄膜型太阳能电池的制造装置; 第一分离部分; 光电转换层形成单元; 接触线形成单元; 印刷单元; 以及蚀刻处理单元，其中所述蚀刻处理单元去除第二分离部分中的光电转换层，以通过湿法蚀刻工艺暴露第二分离部分中的第一电极。

5. 发明授权

US08057987B2 Patterning method of semiconductor device 失效
标题翻译：半导体器件的图案化方法
公开(公告)号：US08057987B2
公开(公告)日：2011-11-15
申请号：US12256259
申请日：2008-10-22
申请人： Cheol Hoon Yang
发明人： Cheol Hoon Yang
IPC分类号： G03F7/26
CPC分类号： G03F1/50
摘要： The invention relates to a patterning method of a semiconductor device. In an aspect of the invention, the method may include forming a target etch layer on a semiconductor substrate, forming a photoresist film on the target etch layer, forming photoresist patterns using exposure and development processes employing an exposure mask wherein exposure patterns, each having inclined top corners, are formed, and patterning the target etch layer using an etch process employing the photoresist patterns.
摘要翻译：本发明涉及半导体器件的图案化方法。在本发明的一个方面，该方法可以包括在半导体衬底上形成靶蚀刻层，在目标蚀刻层上形成光致抗蚀剂膜，使用曝光和显影工艺形成光致抗蚀剂图案，其中曝光图案具有倾斜形成顶角，并且使用采用光致抗蚀剂图案的蚀刻工艺对目标蚀刻层进行图案化。

6. 发明授权

US07955987B2 Exposure mask and method of forming a contact hole of a semiconductor device employing the same 失效
标题翻译：曝光掩模和使用其的半导体器件的接触孔的形成方法
公开(公告)号：US07955987B2
公开(公告)日：2011-06-07
申请号：US11771139
申请日：2007-06-29
申请人： Cheol Hoon Yang
发明人： Cheol Hoon Yang
IPC分类号： H01L21/302
CPC分类号： G03F1/36 , H01L21/31144
摘要： An exposure mask and a method of forming a contact hole of a semiconductor device using the same, in which micro patterns can be formed are disclosed herein. In an aspect, an exposure mask method includes a mask substrate, a light-shield pattern formed on the mask substrate, and a transparent pattern in which a plurality of patterns, which are limited to the light-shield pattern and have different short-direction widths and long-direction widths, form a group which is repeatedly arranged. Accordingly, micro photoresist patterns can be formed uniformly.
摘要翻译：本文公开了曝光掩模和使用其形成微型图形的半导体器件的接触孔的方法。在一方面，曝光掩模方法包括掩模基板，形成在掩模基板上的遮光图案和透明图案，其中限定于遮光图案并具有不同短边方向的多个图案宽度和长方向宽度，形成重复排列的组。因此，可以均匀地形成微光刻胶图案。

7. 发明申请

US20080280443A1 Exposure Mask And Method Of Forming A Contact Hole Of A Semiconductor Device Employing The Same 失效
标题翻译：曝光掩模和形成使用其的半导体器件的接触孔的方法
公开(公告)号：US20080280443A1
公开(公告)日：2008-11-13
申请号：US11771139
申请日：2007-06-29
申请人： Cheol Hoon Yang
发明人： Cheol Hoon Yang
IPC分类号： H01L21/311 , G03F1/00
CPC分类号： G03F1/36 , H01L21/31144
摘要： An exposure mask and a method of forming a contact hole of a semiconductor device using the same, in which micro patterns can be formed are disclosed herein. In an aspect, an exposure mask method includes a mask substrate, a light-shield pattern formed on the mask substrate, and a transparent pattern in which a plurality of patterns, which are limited to the light-shield pattern and have different short-direction widths and long-direction widths, form a group which is repeatedly arranged. Accordingly, micro photoresist patterns can be formed uniformly.
摘要翻译：本文公开了曝光掩模和使用其形成微型图形的半导体器件的接触孔的方法。在一方面，曝光掩模方法包括掩模基板，形成在掩模基板上的遮光图案和透明图案，其中限定于遮光图案并具有不同短边方向的多个图案宽度和长方向宽度，形成重复排列的组。因此，可以均匀地形成微光刻胶图案。

8. 发明授权

US08168505B2 Method of fabricating transistor with epitaxial layers having different germanium concentrations 有权
标题翻译：制造具有不同锗浓度的外延层的晶体管的方法
公开(公告)号：US08168505B2
公开(公告)日：2012-05-01
申请号：US13107789
申请日：2011-05-13
申请人： Cheol Hoon Yang , Yong Han Jeon
发明人： Cheol Hoon Yang , Yong Han Jeon
IPC分类号： H01L21/331 , H01L27/148
CPC分类号： H01L29/7848 , H01L29/165 , H01L29/665 , H01L29/66628 , H01L29/66636
摘要： A method of fabricating a transistor is provided. The transistor includes a SiGe epitaxial layer formed in a recess region of a substrate at both side of a gate electrode and a SiGe capping layer formed on the SiGe epitaxial layer. The transistor further includes a SiGe seed layer formed under the SiGe epitaxial layer and a silicon capping layer formed on the SiGe capping layer.
摘要翻译：提供一种制造晶体管的方法。晶体管包括形成在栅电极两侧的衬底的凹陷区域中的SiGe外延层和形成在SiGe外延层上的SiGe覆盖层。晶体管还包括形成在SiGe外延层下面的SiGe种子层和形成在SiGe覆盖层上的硅覆盖层。

9. 发明授权

US07943969B2 Transistor with a plurality of layers with different Ge concentrations 有权
标题翻译：具有不同Ge浓度的多层的晶体管
公开(公告)号：US07943969B2
公开(公告)日：2011-05-17
申请号：US12259081
申请日：2008-10-27
申请人： Cheol Hoon Yang , Yong Han Jeon
发明人： Cheol Hoon Yang , Yong Han Jeon
IPC分类号： H01L27/148 , H01L21/331
CPC分类号： H01L29/7848 , H01L29/165 , H01L29/665 , H01L29/66628 , H01L29/66636
摘要： A transistor and a method of fabricating the same are provided. The transistor includes a SiGe epitaxial layer formed in a recess region of a substrate at both side of a gate electrode and a SiGe capping layer formed on the SiGe epitaxial layer. The transistor further includes a SiGe seed layer formed under the SiGe epitaxial layer and a silicon capping layer formed on the SiGe capping layer.
摘要翻译：提供一种晶体管及其制造方法。晶体管包括形成在栅电极两侧的衬底的凹陷区域中的SiGe外延层和形成在SiGe外延层上的SiGe覆盖层。晶体管还包括形成在SiGe外延层下面的SiGe种子层和形成在SiGe覆盖层上的硅覆盖层。

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