专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07566643B2 Liquid phase deposition of contacts in programmable resistance and switching devices 有权
公开(公告)号：US07566643B2
公开(公告)日：2009-07-28
申请号：US11880587
申请日：2007-07-23
申请人： Wolodymyr Czubatyi , Tyler Lowrey , Ed Spall
发明人： Wolodymyr Czubatyi , Tyler Lowrey , Ed Spall
IPC分类号： H01L21/20
CPC分类号： H01L45/06 , H01L21/76879 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： A programmable resistance, chalcogenide, switching or phase-change material device includes a substrate with a plurality of stacked layers including a conducting bottom composite electrode layer, an insulative layer having an opening formed therein, an active material layer deposited over both the insulative layer and the bottom composite electrode, and a top electrode layer deposited over the active material layer. The device uses a chemical or electrochemical liquid phase deposition process to selectively and conformally fill the insulative layer opening with the conductive bottom composite electrode layer. Conformally filling the conductive material within the opening reduces structural irregularities within the opening thereby increasing material density and resistivity within the device and thereby improving device performance and reducing programming current.

2. 发明申请

US20090029534A1 Liquid phase deposition of contacts in programmable resistance and switching devices 有权
标题翻译：可编程电阻和开关器件中触点的液相沉积
公开(公告)号：US20090029534A1
公开(公告)日：2009-01-29
申请号：US11880587
申请日：2007-07-23
申请人： Wolodymyr Czubatyi , Tyler Lowrey , Ed Spall
发明人： Wolodymyr Czubatyi , Tyler Lowrey , Ed Spall
IPC分类号： H01L21/208
CPC分类号： H01L45/06 , H01L21/76879 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： A programmable resistance, chalcogenide, switching or phase-change material device includes a substrate with a plurality of stacked layers including a conducting bottom composite electrode layer, an insulative layer having an opening formed therein, an active material layer deposited over both the insulative layer and the bottom composite electrode, and a top electrode layer deposited over the active material layer. The device uses a chemical or electrochemical liquid phase deposition process to selectively and conformally fill the insulative layer opening with the conductive bottom composite electrode layer. Conformally filling the conductive material within the opening reduces structural irregularities within the opening thereby increasing material density and resistivity within the device and thereby improving device performance and reducing programming current.
摘要翻译：可编程电阻，硫族化物，开关或相变材料器件包括具有多个堆叠层的衬底，其包括导电底部复合电极层，其中形成有开口的绝缘层，沉积在绝缘层上的活性材料层和底部复合电极和沉积在活性材料层上的顶部电极层。该装置使用化学或电化学液相沉积工艺来选择性地并保形地用导电底层复合电极层填充绝缘层开口。将导电材料一致地填充在开口内减小开口内的结构不规则性，从而增加器件内的材料密度和电阻率，从而提高器件性能并减少编程电流。

3. 发明授权

US08908413B2 Programmable resistance memory 有权
标题翻译：可编程电阻记忆
公开(公告)号：US08908413B2
公开(公告)日：2014-12-09
申请号：US13216675
申请日：2011-08-24
申请人： Tyler Lowrey , Carl Schell , Wally Czubatyj , Steve Hudgens , Jon Maimon , Jeff Fournier , Mike Hennessey , Ed Spall
发明人： Tyler Lowrey , Carl Schell , Wally Czubatyj , Steve Hudgens , Jon Maimon , Jeff Fournier , Mike Hennessey , Ed Spall
IPC分类号： G11C11/00 , G11C11/56 , G11C13/00
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , G11C13/0035
摘要： A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
摘要翻译：存储器包括具有高比例的动态范围与漂移系数相变存储器件的可编程电阻阵列。

4. 发明申请

US20110305075A1 Programmable Resistance Memory 有权
标题翻译：可编程电阻存储器
公开(公告)号：US20110305075A1
公开(公告)日：2011-12-15
申请号：US13216675
申请日：2011-08-24
申请人： Tyler Lowrey , Carl Schell , Wally Czubatyj , Steve Hudgens , Jon Maimon , Jeff Fournier , Mike Hennessey , Ed Spall
发明人： Tyler Lowrey , Carl Schell , Wally Czubatyj , Steve Hudgens , Jon Maimon , Jeff Fournier , Mike Hennessey , Ed Spall
IPC分类号： G11C11/00
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , G11C13/0035
摘要： A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
摘要翻译：存储器包括具有高比例的动态范围与漂移系数相变存储器件的可编程电阻阵列。

5. 发明授权

US08009455B2 Programmable resistance memory 有权
标题翻译：可编程电阻记忆
公开(公告)号：US08009455B2
公开(公告)日：2011-08-30
申请号：US12321223
申请日：2009-01-20
申请人： Tyler Lowrey , Carl Schell , Wally Czubatyj , Steve Hudgens , Jon Maimon , Jeff Fournier , Mike Hennessey , Ed Spall
发明人： Tyler Lowrey , Carl Schell , Wally Czubatyj , Steve Hudgens , Jon Maimon , Jeff Fournier , Mike Hennessey , Ed Spall
IPC分类号： G11C11/00
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , G11C13/0035
摘要： A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
摘要翻译：存储器包括具有高比例的动态范围与漂移系数相变存储器件的可编程电阻阵列。

6. 发明申请

US20100182825A1 Programmable resistance memory 有权
标题翻译：可编程电阻记忆
公开(公告)号：US20100182825A1
公开(公告)日：2010-07-22
申请号：US12321223
申请日：2009-01-20
申请人： Tyler Lowrey , Carl Schell , Wally Czubatyj , Steve Hudgens , Jon Maimon , Jeff Fournier , Mike Hennessey , Ed Spall
发明人： Tyler Lowrey , Carl Schell , Wally Czubatyj , Steve Hudgens , Jon Maimon , Jeff Fournier , Mike Hennessey , Ed Spall
IPC分类号： G11C11/00 , H01L21/00 , G11C11/416
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , G11C13/0035
摘要： A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
摘要翻译：存储器包括具有高比例的动态范围与漂移系数相变存储器件的可编程电阻阵列。

7. 发明申请

US20090298222A1 Method for manufacturing Chalcogenide devices 审中-公开
标题翻译：制造硫族化物装置的方法
公开(公告)号：US20090298222A1
公开(公告)日：2009-12-03
申请号：US12154952
申请日：2008-05-28
申请人： Tyler Lowrey , Jeff Fournier , Robert Nuss , Carl Schell , Guy Wicker , Jim Ricker , James Reed , Ed Spall , Sergey Kostylev , Wolodymyr Czubatyj , Regino Sandoval
发明人： Tyler Lowrey , Jeff Fournier , Robert Nuss , Carl Schell , Guy Wicker , Jim Ricker , James Reed , Ed Spall , Sergey Kostylev , Wolodymyr Czubatyj , Regino Sandoval
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L45/04 , H01L45/144 , H01L45/1608
摘要： A method of chalcogenide device formation includes treatment of the surface upon which the chalcogenide material is deposited. The treatment reduces or eliminates native oxides and other contaminants from the surface, thereby increasing the adhesion of the chalcogenide layer to the treated surface, eliminating voids between the chalcogenide layer and deposition surface and reducing the degradation of chalcogenide material due to the migration of contaminants into the chalcogenide.
摘要翻译：硫族化物器件形成的方法包括处理沉积硫族化物材料的表面。该处理减少或消除了表面的天然氧化物和其他污染物，从而增加了硫属化物层与处理过的表面的粘附性，消除了硫属化物层与沉积表面之间的空隙，并且由于污染物的迁移而降低了硫族化物材料的降解硫族化物。

8. 发明授权

US08513576B2 Dual resistance heater for phase change devices and manufacturing method thereof 有权
公开(公告)号：US08513576B2
公开(公告)日：2013-08-20
申请号：US12980141
申请日：2010-12-28
申请人： Yudong Kim , Ilya V. Karpov , Charles C. Kuo , Greg Atwood , Maria Santina Marangon , Tyler Lowrey
发明人： Yudong Kim , Ilya V. Karpov , Charles C. Kuo , Greg Atwood , Maria Santina Marangon , Tyler Lowrey
IPC分类号： H05B1/02 , B23K9/00 , G11C11/00 , H01L29/04 , H01C7/06 , H01C7/00
CPC分类号： H01L45/16 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/1286 , H01L45/141 , H01L45/1683
摘要： A dual resistance heater for a phase change material region is formed by depositing a resistive material. The heater material is then exposed to an implantation or plasma which increases the resistance of the surface of the heater material relative to the remainder of the heater material. As a result, the portion of the heater material approximate to the phase change material region is a highly effective heater because of its high resistance, but the bulk of the heater material is not as resistive and, thus, does not increase the voltage drop and the current usage of the device.

9. 发明授权

US08379439B2 Programmable matrix array with chalcogenide material 有权
标题翻译：具有硫属化物材料的可编程矩阵阵列
公开(公告)号：US08379439B2
公开(公告)日：2013-02-19
申请号：US12640723
申请日：2009-12-17
申请人： Tyler Lowrey , Ward Parkinson , Guy Wicker
发明人： Tyler Lowrey , Ward Parkinson , Guy Wicker
IPC分类号： G11C11/00
CPC分类号： G11C13/003 , G11C13/0004 , G11C2213/76 , G11C2213/77 , H01L27/2427 , H01L45/04 , H01L45/1233 , H01L45/141
摘要： A memory element, a threshold switching element, or the series combination of a memory element and a threshold switching element may be used for coupling conductive lines in an electrically programmable matrix array. Leakage may be reduced by optionally placing a breakdown layer in series with the phase-change material and/or threshold switching material between the conductive lines. The matrix array may be used in a programmable logic device.
摘要翻译：可以使用存储元件，阈值开关元件或存储元件和阈值开关元件的串联组合来耦合电可编程矩阵阵列中的导线。可以通过选择性地将导电线之间的相变材料和/或阈值开关材料串联的击穿层来降低泄漏。矩阵阵列可以用在可编程逻辑器件中。

10. 发明授权

US08363458B2 Memory controller 有权
公开(公告)号：US08363458B2
公开(公告)日：2013-01-29
申请号：US12157083
申请日：2008-06-06
申请人： Tyler Lowrey
发明人： Tyler Lowrey
IPC分类号： G11C11/00
CPC分类号： G11C5/025 , G11C5/02 , G11C8/10 , G11C13/0004 , G11C13/003 , G11C2213/52 , G11C2213/71
摘要： A memory controller provides interfaces for one or more thin film memory circuits. The controller may include an analog interface for one or more thin film memories. Such an analog interface may accept analog signals representative of an associated thin film memory's memory state, condition and sense the signal, and encode the signal into a digital value.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式