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1. 发明授权

US08908413B2 Programmable resistance memory 有权
标题翻译：可编程电阻记忆
公开(公告)号：US08908413B2
公开(公告)日：2014-12-09
申请号：US13216675
申请日：2011-08-24
申请人： Tyler Lowrey , Carl Schell , Wally Czubatyj , Steve Hudgens , Jon Maimon , Jeff Fournier , Mike Hennessey , Ed Spall
发明人： Tyler Lowrey , Carl Schell , Wally Czubatyj , Steve Hudgens , Jon Maimon , Jeff Fournier , Mike Hennessey , Ed Spall
IPC分类号： G11C11/00 , G11C11/56 , G11C13/00
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , G11C13/0035
摘要： A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
摘要翻译：存储器包括具有高比例的动态范围与漂移系数相变存储器件的可编程电阻阵列。

2. 发明申请

US20110305075A1 Programmable Resistance Memory 有权
标题翻译：可编程电阻存储器
公开(公告)号：US20110305075A1
公开(公告)日：2011-12-15
申请号：US13216675
申请日：2011-08-24
申请人： Tyler Lowrey , Carl Schell , Wally Czubatyj , Steve Hudgens , Jon Maimon , Jeff Fournier , Mike Hennessey , Ed Spall
发明人： Tyler Lowrey , Carl Schell , Wally Czubatyj , Steve Hudgens , Jon Maimon , Jeff Fournier , Mike Hennessey , Ed Spall
IPC分类号： G11C11/00
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , G11C13/0035
摘要： A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
摘要翻译：存储器包括具有高比例的动态范围与漂移系数相变存储器件的可编程电阻阵列。

3. 发明授权

US08009455B2 Programmable resistance memory 有权
标题翻译：可编程电阻记忆
公开(公告)号：US08009455B2
公开(公告)日：2011-08-30
申请号：US12321223
申请日：2009-01-20
申请人： Tyler Lowrey , Carl Schell , Wally Czubatyj , Steve Hudgens , Jon Maimon , Jeff Fournier , Mike Hennessey , Ed Spall
发明人： Tyler Lowrey , Carl Schell , Wally Czubatyj , Steve Hudgens , Jon Maimon , Jeff Fournier , Mike Hennessey , Ed Spall
IPC分类号： G11C11/00
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , G11C13/0035
摘要： A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
摘要翻译：存储器包括具有高比例的动态范围与漂移系数相变存储器件的可编程电阻阵列。

4. 发明申请

US20100182825A1 Programmable resistance memory 有权
标题翻译：可编程电阻记忆
公开(公告)号：US20100182825A1
公开(公告)日：2010-07-22
申请号：US12321223
申请日：2009-01-20
申请人： Tyler Lowrey , Carl Schell , Wally Czubatyj , Steve Hudgens , Jon Maimon , Jeff Fournier , Mike Hennessey , Ed Spall
发明人： Tyler Lowrey , Carl Schell , Wally Czubatyj , Steve Hudgens , Jon Maimon , Jeff Fournier , Mike Hennessey , Ed Spall
IPC分类号： G11C11/00 , H01L21/00 , G11C11/416
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , G11C13/0035
摘要： A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
摘要翻译：存储器包括具有高比例的动态范围与漂移系数相变存储器件的可编程电阻阵列。

5. 发明申请

US20090298222A1 Method for manufacturing Chalcogenide devices 审中-公开
标题翻译：制造硫族化物装置的方法
公开(公告)号：US20090298222A1
公开(公告)日：2009-12-03
申请号：US12154952
申请日：2008-05-28
申请人： Tyler Lowrey , Jeff Fournier , Robert Nuss , Carl Schell , Guy Wicker , Jim Ricker , James Reed , Ed Spall , Sergey Kostylev , Wolodymyr Czubatyj , Regino Sandoval
发明人： Tyler Lowrey , Jeff Fournier , Robert Nuss , Carl Schell , Guy Wicker , Jim Ricker , James Reed , Ed Spall , Sergey Kostylev , Wolodymyr Czubatyj , Regino Sandoval
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L45/04 , H01L45/144 , H01L45/1608
摘要： A method of chalcogenide device formation includes treatment of the surface upon which the chalcogenide material is deposited. The treatment reduces or eliminates native oxides and other contaminants from the surface, thereby increasing the adhesion of the chalcogenide layer to the treated surface, eliminating voids between the chalcogenide layer and deposition surface and reducing the degradation of chalcogenide material due to the migration of contaminants into the chalcogenide.
摘要翻译：硫族化物器件形成的方法包括处理沉积硫族化物材料的表面。该处理减少或消除了表面的天然氧化物和其他污染物，从而增加了硫属化物层与处理过的表面的粘附性，消除了硫属化物层与沉积表面之间的空隙，并且由于污染物的迁移而降低了硫族化物材料的降解硫族化物。

6. 发明授权

US07566643B2 Liquid phase deposition of contacts in programmable resistance and switching devices 有权
公开(公告)号：US07566643B2
公开(公告)日：2009-07-28
申请号：US11880587
申请日：2007-07-23
申请人： Wolodymyr Czubatyi , Tyler Lowrey , Ed Spall
发明人： Wolodymyr Czubatyi , Tyler Lowrey , Ed Spall
IPC分类号： H01L21/20
CPC分类号： H01L45/06 , H01L21/76879 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： A programmable resistance, chalcogenide, switching or phase-change material device includes a substrate with a plurality of stacked layers including a conducting bottom composite electrode layer, an insulative layer having an opening formed therein, an active material layer deposited over both the insulative layer and the bottom composite electrode, and a top electrode layer deposited over the active material layer. The device uses a chemical or electrochemical liquid phase deposition process to selectively and conformally fill the insulative layer opening with the conductive bottom composite electrode layer. Conformally filling the conductive material within the opening reduces structural irregularities within the opening thereby increasing material density and resistivity within the device and thereby improving device performance and reducing programming current.

7. 发明申请

US20090029534A1 Liquid phase deposition of contacts in programmable resistance and switching devices 有权
标题翻译：可编程电阻和开关器件中触点的液相沉积
公开(公告)号：US20090029534A1
公开(公告)日：2009-01-29
申请号：US11880587
申请日：2007-07-23
申请人： Wolodymyr Czubatyi , Tyler Lowrey , Ed Spall
发明人： Wolodymyr Czubatyi , Tyler Lowrey , Ed Spall
IPC分类号： H01L21/208
CPC分类号： H01L45/06 , H01L21/76879 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： A programmable resistance, chalcogenide, switching or phase-change material device includes a substrate with a plurality of stacked layers including a conducting bottom composite electrode layer, an insulative layer having an opening formed therein, an active material layer deposited over both the insulative layer and the bottom composite electrode, and a top electrode layer deposited over the active material layer. The device uses a chemical or electrochemical liquid phase deposition process to selectively and conformally fill the insulative layer opening with the conductive bottom composite electrode layer. Conformally filling the conductive material within the opening reduces structural irregularities within the opening thereby increasing material density and resistivity within the device and thereby improving device performance and reducing programming current.
摘要翻译：可编程电阻，硫族化物，开关或相变材料器件包括具有多个堆叠层的衬底，其包括导电底部复合电极层，其中形成有开口的绝缘层，沉积在绝缘层上的活性材料层和底部复合电极和沉积在活性材料层上的顶部电极层。该装置使用化学或电化学液相沉积工艺来选择性地并保形地用导电底层复合电极层填充绝缘层开口。将导电材料一致地填充在开口内减小开口内的结构不规则性，从而增加器件内的材料密度和电阻率，从而提高器件性能并减少编程电流。

8. 发明授权

US06750079B2 Method for making programmable resistance memory element 有权
标题翻译：制造可编程电阻存储元件的方法
公开(公告)号：US06750079B2
公开(公告)日：2004-06-15
申请号：US09891157
申请日：2001-06-26
申请人： Tyler Lowrey , Patrick Klersy , Stephen J. Hudgens , Jon Maimon
发明人： Tyler Lowrey , Patrick Klersy , Stephen J. Hudgens , Jon Maimon
IPC分类号： H01L2100
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/1273 , H01L45/144 , H01L45/16
摘要： A method of making an electrically operated programmable resistance memory element. A sidewall spacer is used as a mask to form raised portions on an edge of a conductive sidewall layer. The modified conductive sidewall layer is used as an electrode for the memory element.
摘要翻译：一种制造电动可编程电阻存储元件的方法。侧壁间隔件用作掩模以在导电侧壁层的边缘上形成凸起部分。修饰的导电侧壁层用作存储元件的电极。

9. 发明授权

US06927093B2 Method for making programmable resistance memory element 有权
标题翻译：制造可编程电阻存储元件的方法
公开(公告)号：US06927093B2
公开(公告)日：2005-08-09
申请号：US10801414
申请日：2004-03-16
申请人： Tyler Lowrey , Patrick Klersy , Stephen J. Hudgens , Jon Maimon
发明人： Tyler Lowrey , Patrick Klersy , Stephen J. Hudgens , Jon Maimon
IPC分类号： G11C11/56 , H01L27/24 , H01L45/00 , H01L21/00
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/1273 , H01L45/144 , H01L45/16
摘要： A method of making an electrically operated programmable resistance memory element. A sidewall spacer is used as a mask to form a raised portion of a conductive layer. A programmable resistance material is formed in electrical contact with the raised portion.
摘要翻译：一种制造电动可编程电阻存储元件的方法。侧壁间隔物用作掩模以形成导电层的凸起部分。可编程电阻材料形成为与凸起部分电接触。

10. 发明授权

US07994034B2 Temperature and pressure control methods to fill features with programmable resistance and switching devices 有权
标题翻译：温度和压力控制方法来填充具有可编程电阻和开关器件的特性
公开(公告)号：US07994034B2
公开(公告)日：2011-08-09
申请号：US12075180
申请日：2008-03-10
申请人： Jeff Fournier , Wolodymyr Czubatyj , Tyler Lowrey
发明人： Jeff Fournier , Wolodymyr Czubatyj , Tyler Lowrey
IPC分类号： H01L21/20
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625 , H01L45/1641
摘要： A programmable resistance, chalcogenide, switching or phase-change material device includes a substrate with a plurality of stacked layers including a conducting bottom electrode layer, an insulative layer having an opening formed therein, an active material layer deposited over both the insulative layer, within the opening, and over selected portions of the bottom electrode, and a top electrode layer deposited over the active material layer. The device uses temperature and pressure control methods to increase surface mobility in an active material layer, thus providing complete coverage or fill of the openings in the insulative layer, selected exposed portions of the bottom electrode layer, and the insulative layer.
摘要翻译：可编程电阻，硫族化物，开关或相变材料器件包括具有多个堆叠层的衬底，其包括导电底电极层，其中形成有开口的绝缘层，沉积在绝缘层上的活性材料层，开口和底部电极的选定部分，以及沉积在活性材料层上的顶部电极层。该装置使用温度和压力控制方法来增加活性材料层中的表面迁移率，从而提供绝缘层中的开口，底部电极层的选定的暴露部分和绝缘层的完全覆盖或填充。

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