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1. 发明授权

US07749916B2 Additive printed mask process and structures produced thereby 有权
标题翻译：添加印刷掩模工艺和由此生产的结构
公开(公告)号：US07749916B2
公开(公告)日：2010-07-06
申请号：US12046242
申请日：2008-03-11
申请人： William Wong , Scott Limb , Michael Chabinyc , Beverly Russo , Rene Lujan
发明人： William Wong , Scott Limb , Michael Chabinyc , Beverly Russo , Rene Lujan
IPC分类号： H01L21/31
CPC分类号： G02F1/133512 , B41M3/003 , B41M3/006 , G02F1/133516 , G03F7/2018 , Y10S438/942
摘要： A digital lithographic process first deposits a mask layer comprised of print patterned mask features. The print patterned mask features define gaps into which a target material may be deposited, preferably through a digital lithographic process. The target material is cured or hardened, if necessary, into target features. The mask layer is then selectively removed. The remaining target features may then be used as exposure or etch masks, physical structures such as fluid containment elements, etc. Fine feature widths, narrower the minimum width of the print patterned mask features, may be obtained while realizing the benefits of digital lithography in the manufacturing process.
摘要翻译：数字光刻工艺首先沉积由印刷图案掩模特征组成的掩模层。印刷图案掩模特征限定了可以沉积目标材料的间隙，优选通过数字光刻工艺。如果需要，目标材料被固化或硬化成目标特征。然后选择性地去除掩模层。剩余的目标特征然后可以用作曝光或蚀刻掩模，诸如流体容纳元件的物理结构等。可以在实现数字光刻的优点的同时获得精细特征宽度，更小的打印图案化掩模特征的最小宽度制造过程。

2. 发明申请

US20070172969A1 Additive printed mask process and structures produced thereby 有权
标题翻译：添加印刷掩模工艺和由此生产的结构
公开(公告)号：US20070172969A1
公开(公告)日：2007-07-26
申请号：US10536102
申请日：2006-01-20
申请人： William Wong , Scott Limb , Michael Chabinyc , Beverly Russo , Rene Lujan
发明人： William Wong , Scott Limb , Michael Chabinyc , Beverly Russo , Rene Lujan
IPC分类号： H01L21/00
CPC分类号： G02F1/133512 , B41M3/003 , B41M3/006 , G02F1/133516 , G03F7/2018 , Y10S438/942
摘要： A digital lithographic process first deposits a mask layer comprised of print patterned mask features. The print patterned mask features define gaps into which a target material may be deposited, preferably through a digital lithographic process. The target material is cured or hardened, if necessary, into target features. The mask layer is then selectively removed. The remaining target features may then be used as exposure or etch masks, physical structures such as fluid containment elements, etc. Fine feature widths, narrower the minimum width of the print patterned mask features, may be obtained while realizing the benefits of digital lithography in the manufacturing process.
摘要翻译：数字光刻工艺首先沉积由印刷图案掩模特征组成的掩模层。印刷图案掩模特征限定了可以沉积目标材料的间隙，优选通过数字光刻工艺。如果需要，目标材料被固化或硬化成目标特征。然后选择性地去除掩模层。剩余的目标特征可以用作曝光或蚀刻掩模，诸如流体容纳元件的物理结构等。可以在实现数字光刻的优点的同时获得精细特征宽度，打印图案化掩模特征的最小宽度更窄制造过程。

3. 发明授权

US07384568B2 Method of forming a darkfield etch mask 失效
标题翻译：形成暗场蚀刻掩模的方法
公开(公告)号：US07384568B2
公开(公告)日：2008-06-10
申请号：US11394438
申请日：2006-03-31
申请人： William Wong , Scott Limb , Beverly Russo , Michael Chabinyc , Rene Lujan
发明人： William Wong , Scott Limb , Beverly Russo , Michael Chabinyc , Rene Lujan
IPC分类号： B44C1/22 , C03C25/68 , C03C15/00 , C23F1/00
CPC分类号： B44C1/22 , H01L27/1292 , H01L29/4908
摘要： Susceptibility of darkfield etch masks (majority of the mask area is opaque) to pinhole defects, transferred pattern, non-uniformity, etc. due to ejector dropout or drop misdirection, and long duty cycles due to large-area coverage, when using digital lithography (or print patterning) is addressed by using a clear-field print pattern that is then coated with etch resist material. The printed clear field pattern is selectively removed to form an inverse pattern (darkfield) within the coated resist layer. Etching then removes selected portions of an underlying (e.g., encapsulation, conductive, etc.) layer. Removal of the mask produces a layer with large-area features with substantially reduced defects.
摘要翻译：当使用数字光刻技术时，由于喷射器脱落或滴落错误方向，暗场蚀刻掩模（大部分掩模区域不透明）对针孔缺陷，转印图案，不均匀性等的敏感性以及由于大面积覆盖而造成的长占空比（或印刷图案化）通过使用随后涂覆有抗蚀剂材料的透明场印刷图案来解决。选择性地去除打印的清晰场图案以在涂覆的抗蚀剂层内形成反向图案（暗场）。然后蚀刻去除底层（例如，封装，导电等）层的选定部分。去除掩模产生具有大面积特征并具有显着减少的缺陷的层。

4. 发明申请

US20070235410A1 Method of forming a darkfield etch mask 失效
标题翻译：形成暗场蚀刻掩模的方法
公开(公告)号：US20070235410A1
公开(公告)日：2007-10-11
申请号：US11394438
申请日：2006-03-31
申请人： William Wong , Scott Limb , Beverly Russo , Michael Chabinyc , Rene Lujan
发明人： William Wong , Scott Limb , Beverly Russo , Michael Chabinyc , Rene Lujan
IPC分类号： C23F1/00
CPC分类号： B44C1/22 , H01L27/1292 , H01L29/4908
摘要： Susceptibility of darkfield etch masks (majority of the mask area is opaque) to pinhole defects, transferred pattern, non-uniformity, etc. due to ejector dropout or drop misdirection, and long duty cycles due to large-area coverage, when using digital lithography (or print patterning) is addressed by using a clear-field print pattern that is then coated with etch resist material. The printed clear field pattern is selectively removed to form an inverse pattern (darkfield) within the coated resist layer. Etching then removes selected portions of an underlying (e.g., encapsulation, conductive, etc.) layer. Removal of the mask produces a layer with large-area features with substantially reduced defects.
摘要翻译：当使用数字光刻技术时，由于喷射器脱落或滴落错误导向，暗区蚀刻掩模（大部分掩模区域不透明）对针孔缺陷，转印图案，不均匀性等的敏感性以及由于大面积覆盖而造成的长占空比（或印刷图案化）通过使用随后涂覆有抗蚀剂材料的透明场印刷图案来解决。选择性地去除打印的清晰场图案以在涂覆的抗蚀剂层内形成反向图案（暗场）。然后蚀刻去除底层（例如，封装，导电等）层的选定部分。去除掩模产生具有大面积特征并具有显着减少的缺陷的层。

5. 发明申请

US20080153014A1 Additive Printed Mask Process And Structures Produced Thereby 有权
标题翻译：添加剂印花面膜工艺和结构
公开(公告)号：US20080153014A1
公开(公告)日：2008-06-26
申请号：US12046242
申请日：2008-03-11
申请人： William Wong , Scott Limb , Michael Chabinyc , Beverly Russo , Rene A. Lujan
发明人： William Wong , Scott Limb , Michael Chabinyc , Beverly Russo , Rene A. Lujan
IPC分类号： G03F1/06
CPC分类号： G02F1/133512 , B41M3/003 , B41M3/006 , G02F1/133516 , G03F7/2018 , Y10S438/942
摘要： A digital lithographic process first deposits a mask layer comprised of print patterned mask features. The print patterned mask features define gaps into which a target material may be deposited, preferably through a digital lithographic process. The target material is cured or hardened, if necessary, into target features. The mask layer is then selectively removed. The remaining target features may then be used as exposure or etch masks, physical structures such as fluid containment elements, etc. Fine feature widths, narrower the minimum width of the print patterned mask features, may be obtained while realizing the benefits of digital lithography in the manufacturing process.
摘要翻译：数字光刻工艺首先沉积由印刷图案掩模特征组成的掩模层。印刷图案掩模特征限定了可以沉积目标材料的间隙，优选通过数字光刻工艺。如果需要，目标材料被固化或硬化成目标特征。然后选择性地去除掩模层。剩余的目标特征然后可以用作曝光或蚀刻掩模，诸如流体容纳元件的物理结构等。可以在实现数字光刻的优点的同时获得精细特征宽度，更小的打印图案化掩模特征的最小宽度制造过程。

6. 发明授权

US07365022B2 Additive printed mask process and structures produced thereby 有权
标题翻译：添加印刷掩模工艺和由此生产的结构
公开(公告)号：US07365022B2
公开(公告)日：2008-04-29
申请号：US10536102
申请日：2006-01-20
申请人： William Wong , Scott Limb , Michael Chabinyc , Beverly Russo , Rene A. Lujan
发明人： William Wong , Scott Limb , Michael Chabinyc , Beverly Russo , Rene A. Lujan
IPC分类号： H01L21/31
CPC分类号： G02F1/133512 , B41M3/003 , B41M3/006 , G02F1/133516 , G03F7/2018 , Y10S438/942
摘要： A digital lithographic process first deposits a mask layer comprised of print patterned mask features. The print patterned mask features define gaps into which a target material may be deposited, preferably through a digital lithographic process. The target material is cured or hardened, if necessary, into target features. The mask layer is then selectively removed. The remaining target features may then be used as exposure or etch masks, physical structures such as fluid containment elements, etc. Fine feature widths, narrower the minimum width of the print patterned mask features, may be obtained while realizing the benefits of digital lithography in the manufacturing process.
摘要翻译：数字光刻工艺首先沉积由印刷图案掩模特征组成的掩模层。印刷图案掩模特征限定了可以沉积目标材料的间隙，优选通过数字光刻工艺。如果需要，目标材料被固化或硬化成目标特征。然后选择性地去除掩模层。剩余的目标特征然后可以用作曝光或蚀刻掩模，诸如流体容纳元件的物理结构等。可以在实现数字光刻的优点的同时获得精细特征宽度，更小的打印图案化掩模特征的最小宽度制造过程。

7. 发明申请

US20070172774A1 Process for forming a feature by undercutting a printed mask 有权
标题翻译：通过底切印刷掩模形成特征的方法
公开(公告)号：US20070172774A1
公开(公告)日：2007-07-26
申请号：US11336365
申请日：2006-01-20
申请人： Scott Limb , William Wong , Steven Ready , Michael Chabinyc
发明人： Scott Limb , William Wong , Steven Ready , Michael Chabinyc
IPC分类号： G03F7/26
CPC分类号： G03F7/0007 , G02F1/133516 , G03F7/2018
摘要： A print patterned mask is formed a digital lithographic process on the surface of a photoresist or similar material layer. The print patterned mask is then used as a development or etching mask, and the underlying layer overdeveloped or overetched to undercut the print patterned mask. The mask may be removed and the underlying structure used an etch mask or as a final structure. Fine feature widths, narrower the minimum width of the print patterned mask features, may be obtained while realizing the benefits of digital lithography in the manufacturing process.
摘要翻译：打印图案化掩模在光致抗蚀剂或类似材料层的表面上形成数字平版印刷工艺。然后将印刷图案化掩模用作显影或蚀刻掩模，并且底层被发展或过蚀刻以削去印刷图案掩模。可以去除掩模，并且底层结构使用蚀刻掩模或作为最终结构。可以在实现数字光刻在制造过程中的益处的同时获得细微的特征宽度，使印刷图案化掩模特征的最小宽度更窄。

8. 发明授权

US07498119B2 Process for forming a feature by undercutting a printed mask 有权
标题翻译：通过底切印刷掩模形成特征的方法
公开(公告)号：US07498119B2
公开(公告)日：2009-03-03
申请号：US11336365
申请日：2006-01-20
申请人： Scott Limb , William Wong , Steven Ready , Michael Chabinyc
发明人： Scott Limb , William Wong , Steven Ready , Michael Chabinyc
IPC分类号： G03F7/20 , G03F7/26 , G03F7/38
CPC分类号： G03F7/0007 , G02F1/133516 , G03F7/2018
摘要： A print patterned mask is formed a digital lithographic process on the surface of a photoresist or similar material layer. The print patterned mask is then used as a development or etching mask, and the underlying layer overdeveloped or overetched to undercut the print patterned mask. The mask may be removed and the underlying structure used an etch mask or as a final structure. Fine feature widths, narrower the minimum width of the print patterned mask features, may be obtained while realizing the benefits of digital lithography in the manufacturing process.
摘要翻译：打印图案化掩模在光致抗蚀剂或类似材料层的表面上形成数字平版印刷工艺。然后将印刷图案化掩模用作显影或蚀刻掩模，并且底层被发展或过蚀刻以削去印刷图案掩模。可以去除掩模，并且底层结构使用蚀刻掩模或作为最终结构。可以在实现数字光刻在制造过程中的益处的同时获得细微的特征宽度，使印刷图案化掩模特征的最小宽度更窄。

9. 发明申请

US20060103695A1 Thin film and thick film heater and control architecture for a liquid drop ejector 有权
标题翻译：薄膜和厚膜加热器和液滴喷射器的控制架构
公开(公告)号：US20060103695A1
公开(公告)日：2006-05-18
申请号：US10990110
申请日：2004-11-15
申请人： Michael Young , Steven Buhler , Scott Limb , Karl Littau , Beverly Russo , Scott Solberg , Michael Weisberg , Cathie Burke , Richard Schmachtenberg , Peter Nystrom , Sharon Berger , Timothy Trang , Thomas Long
发明人： Michael Young , Steven Buhler , Scott Limb , Karl Littau , Beverly Russo , Scott Solberg , Michael Weisberg , Cathie Burke , Richard Schmachtenberg , Peter Nystrom , Sharon Berger , Timothy Trang , Thomas Long
IPC分类号： B41J2/05
CPC分类号： B41J2/1626 , B41J2/14072 , B41J2/14129 , B41J2/14153 , B41J2/1603 , B41J2/1631
摘要： A liquid drop ejector comprising a jet stack, thin film or thick film heaters formed on the surface of the jet stack, and at least one thin film or thick film temperature sensor operative to provide feedback temperature control for the thin film or thick film heater elements is provided. In one form, the liquid drop ejector also has the thin film or thick film heater elements grouped in segments that are operative to be individually controlled. In addition, in another form, the signal lines provided to the liquid drop ejector are patterned to allow for more uniform resistance over the span of the liquid drop ejector.
摘要翻译：一种液滴喷射器，包括形成在射流堆叠表面上的喷射叠层，薄膜或厚膜加热器，以及至少一个薄膜或厚膜温度传感器，用于为薄膜或厚膜加热器元件提供反馈温度控制被提供。在一种形式中，液滴喷射器还具有分组的薄膜或厚膜加热器元件，其可操作以单独控制。此外，在另一种形式中，提供给液滴喷射器的信号线被图案化以允许在液滴喷射器的跨度上具有更均匀的电阻。

10. 发明申请

US20090185018A9 DIGITAL LITHOGRAPHY USING REAL TIME QUALITY CONTROL 有权
标题翻译：使用实时质量控制的数字刻印
公开(公告)号：US20090185018A9
公开(公告)日：2009-07-23
申请号：US11204648
申请日：2005-08-15
申请人： Steven Ready , William Wong , Scott Limb
发明人： Steven Ready , William Wong , Scott Limb
IPC分类号： G01D11/00
CPC分类号： B41J2/2139 , B81C99/0065 , B81C2201/0184 , B81C2201/0198
摘要： A digital lithography system including a droplet source (printhead) for selectively ejecting liquid droplets of a phase-change masking material, and an imaging system for capturing (generating) image data representing printed features formed by the ejected liquid droplets. The system also includes a digital control system that detects defects in the printed features, for example, by comparing the image data with stored image data. The digital control system then modifies the printed feature to correct the defect, for example, by moving the printhead over the defect and causing the printhead to eject droplets onto the defect's location. In one embodiment, a single-printhead secondary printer operates in conjunction with a multi-printhead main printer to correct defects.
摘要翻译：一种数字光刻系统，包括用于选择性地喷射相变掩模材料的液滴的液滴源（打印头）和用于捕获（产生）表示喷射液滴形成的打印特征的图像数据的成像系统。该系统还包括数字控制系统，其检测打印特征中的缺陷，例如通过将图像数据与存储的图像数据进行比较。然后，数字控制系统修改打印的特征以校正缺陷，例如通过将打印头移动到缺陷上并使打印头将液滴喷射到缺陷的位置上。在一个实施例中，单打印头二次打印机与多打印头主打印机一起操作以校正缺陷。

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