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1. 发明授权

US06742884B2 Apparatus for printing etch masks using phase-change materials 失效
标题翻译：使用相变材料印刷蚀刻掩模的设备
公开(公告)号：US06742884B2
公开(公告)日：2004-06-01
申请号：US09838685
申请日：2001-04-19
申请人： William S. Wong , Robert A. Street , Stephen D. White , Robert Matusiak , Raj B. Apte
发明人： William S. Wong , Robert A. Street , Stephen D. White , Robert Matusiak , Raj B. Apte
IPC分类号： E03F100
CPC分类号： B41J2/14008 , H01L21/0271 , H01L21/0332 , H01L21/0337
摘要： A method and system for masking a surface to be etched is described. A droplet source ejects droplets of a masking material for deposit on a thin-film or other substrate surface to be etched. The temperature of the thin-film or substrate surface is controlled such that the droplets rapidly freeze upon contact with the thin-film or substrate surface. The thin-film or substrate is then etched. After etching the masking material is removed.
摘要翻译：描述用于掩蔽待蚀刻表面的方法和系统。液滴源喷射掩模材料的液滴以沉积在待蚀刻的薄膜或其它衬底表面上。控制薄膜或基板表面的温度，使得液滴在与薄膜或基板表面接触时快速冷冻。然后蚀刻薄膜或衬底。蚀刻后，去除掩模材料。

2. 发明授权

US06872320B2 Method for printing etch masks using phase-change materials 有权
标题翻译：使用相变材料印刷蚀刻掩模的方法
公开(公告)号：US06872320B2
公开(公告)日：2005-03-29
申请号：US09838684
申请日：2001-04-19
申请人： William S. Wong , Robert A. Street , Stephen D. White , Robert Matusiak , Raj B. Apte
发明人： William S. Wong , Robert A. Street , Stephen D. White , Robert Matusiak , Raj B. Apte
IPC分类号： C23F1/00 , B44C1/22
CPC分类号： G03F7/2018 , B41C1/025 , B41M3/006 , B41M5/0011 , G02F1/1303 , H01L27/1292
摘要： A method and system for masking a surface to be etched is described. A droplet source ejects droplets of a masking material for deposit on a thin-film or other substrate surface to be etched. The temperature of the thin-film or substrate surface is controlled such that the droplets rapidly freeze upon contact with the thin-film or substrate surface. The thin-film or substrate is then etched. After etching the masking material is removed.
摘要翻译：描述用于掩蔽待蚀刻表面的方法和系统。液滴源喷射掩模材料的液滴以沉积在待蚀刻的薄膜或其它衬底表面上。控制薄膜或基板表面的温度，使得液滴在与薄膜或基板表面接触时快速冷冻。然后蚀刻薄膜或衬底。蚀刻后，去除掩模材料。

3. 发明授权

US07425734B2 Thin-film transistor array with ring geometry 有权
公开(公告)号：US07425734B2
公开(公告)日：2008-09-16
申请号：US11190178
申请日：2005-07-25
申请人： William S. Wong , Jeng Ping Lu , Alberto Salleo , Michael L. Chabinyc , Raj B. Apte , Robert A. Street
发明人： William S. Wong , Jeng Ping Lu , Alberto Salleo , Michael L. Chabinyc , Raj B. Apte , Robert A. Street
IPC分类号： H01L27/148
CPC分类号： H01L27/283 , H01L27/12 , H01L27/3262 , H01L27/3274 , H01L29/41733 , H01L29/78696 , H01L51/0541 , H01L51/0545
摘要： An improved transistor array for a display or sensor device is described. The display or sensor device includes a plurality of pixels. Each pixel includes a width and a length. Each pixel is addressed by a transistor. The transistor addressing each pixel has a channel with a channel width. Each channel width is greater than the width or length of the pixel being addressed. By fabricating transistors with extremely long channel widths, lower mobility semiconductor materials can easily be used to fabricate the display device.

4. 发明授权

US07358530B2 Thin-film transistor array with ring geometry 有权
标题翻译：具有环形几何形状的薄膜晶体管阵列
公开(公告)号：US07358530B2
公开(公告)日：2008-04-15
申请号：US10734429
申请日：2003-12-12
申请人： William S. Wong , Jeng Ping Lu , Alberto Salleo , Michael L. Chabinyc , Raj B. Apte , Robert A. Street
发明人： William S. Wong , Jeng Ping Lu , Alberto Salleo , Michael L. Chabinyc , Raj B. Apte , Robert A. Street
IPC分类号： H01L29/04
CPC分类号： H01L27/283 , H01L27/12 , H01L27/3262 , H01L27/3274 , H01L29/41733 , H01L29/78696 , H01L51/0541 , H01L51/0545
摘要： An improved transistor array for a display or sensor device is described. The display or sensor device includes a plurality of pixels. Each pixel includes a width and a length. Each pixel is addressed by a transistor. The transistor addressing each pixel has a channel with a channel width. Each channel width is greater than the width or length of the pixel being addressed. By fabricating transistors with extremely long channel widths, lower mobility semiconductor materials can easily be used to fabricate the display device.
摘要翻译：描述了用于显示器或传感器装置的改进的晶体管阵列。显示器或传感器装置包括多个像素。每个像素包括宽度和长度。每个像素由晶体管寻址。寻址每个像素的晶体管具有通道宽度。每个通道宽度大于要寻址的像素的宽度或长度。通过制造具有非常长的沟道宽度的晶体管，可以容易地使用低迁移率半导体材料来制造显示器件。

5. 发明授权

US06252215B1 Hybrid sensor pixel architecture with gate line and drive line synchronization 失效
标题翻译：混合传感器像素结构，具有栅极线和驱动线同步
公开(公告)号：US06252215B1
公开(公告)日：2001-06-26
申请号：US09069053
申请日：1998-04-28
申请人： Ping Mei , Andrew J. Moore , Raj B. Apte , Steven E. Ready , Robert A. Street , James B. Boyce
发明人： Ping Mei , Andrew J. Moore , Raj B. Apte , Steven E. Ready , Robert A. Street , James B. Boyce
IPC分类号： H01J4014
CPC分类号： H01L27/14643 , H01L27/14609 , H04N5/3741
摘要： A pixel circuit construction for image sensing includes a photosensor, an amplifier, a selector switch and, and a reset switch. The amplifier may be a single polycrystalline silicon (channel) transistor for high gain. The selector switch may also be a single polycrystalline silicon (channel) transistor for high conductivity. The reset switch may a single amorphous crystalline silicon (channel) transistor for low leakage current. The photosensor and amplifier may be connected to a shared bias line or may be connected to separate bias and drive lines, respectively. The selector and reset switches may be connected to a shared data line or may be connected to separate data and reset lines, respectively. Laser crystallization and rehydrogenation techniques are well suited to obtaining devices described herein. Gate line and drive voltage line synchronization is provided.
摘要翻译：用于图像感测的像素电路结构包括光电传感器，放大器，选择器开关和复位开关。放大器可以是用于高增益的单个多晶硅（沟道）晶体管。选择器开关也可以是用于高导电性的单个多晶硅（沟道）晶体管。复位开关可以是用于低漏电流的单个非晶态硅（沟道）晶体管。光传感器和放大器可以连接到共享偏置线，或者可以分别连接到单独的偏置线和驱动线。选择器和复位开关可以连接到共享数据线，或者可以分别连接到单独的数据和复位线。激光结晶和再氢化技术非常适合于获得本文所述的装置。提供栅极线和驱动电压线同步。

6. 发明授权

US6031248A Hybrid sensor pixel architecture 失效
标题翻译：混合传感器像素架构
公开(公告)号：US6031248A
公开(公告)日：2000-02-29
申请号：US67657
申请日：1998-04-28
申请人： Ping Mei , Andrew J. Moore , Raj B. Apte , Steven E. Ready , Robert A. Street , James B. Boyce
发明人： Ping Mei , Andrew J. Moore , Raj B. Apte , Steven E. Ready , Robert A. Street , James B. Boyce
IPC分类号： H01L27/146 , H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L29/46
CPC分类号： H01L27/14609 , H01L27/14643
摘要： A pixel circuit construction for image sensing includes a photosensor, an amplifier, a selector switch and, and a reset switch. The amplifier may be a single polycrystalline silicon (channel) transistor for high gain. The selector switch may also be a single polycrystalline silicon (channel) transistor for high conductivity. The reset switch may a single amorphous crystalline silicon (channel) transistor for low leakage current. The photosensor and amplifier may be connected to a shared bias line or may be connected to separate bias and drive lines, respectively. The selector and reset switches may be connected to a shared data line or may be connected to separate data and reset lines, respectively. Laser crystallization and rehydrogenation techniques are well suited to obtaining devices described herein.
摘要翻译：用于图像感测的像素电路结构包括光电传感器，放大器，选择器开关和复位开关。放大器可以是用于高增益的单个多晶硅（沟道）晶体管。选择器开关也可以是用于高导电性的单个多晶硅（沟道）晶体管。复位开关可以是用于低漏电流的单个非晶态硅（沟道）晶体管。光传感器和放大器可以连接到共享偏置线，或者可以分别连接到单独的偏置线和驱动线。选择器和复位开关可以连接到共享数据线，或者可以分别连接到单独的数据和复位线。激光结晶和再氢化技术非常适合于获得本文所述的装置。

7. 发明授权

US6051827A Hybrid sensor pixel architecture with threshold response 失效
标题翻译：具有阈值响应的混合传感器像素结构
公开(公告)号：US6051827A
公开(公告)日：2000-04-18
申请号：US67941
申请日：1998-04-28
申请人： Ping Mei , Andrew J. Moore , Raj B. Apte , Steven E. Ready , Robert A. Street , James B. Boyce
发明人： Ping Mei , Andrew J. Moore , Raj B. Apte , Steven E. Ready , Robert A. Street , James B. Boyce
IPC分类号： H01L27/146 , H01J40/14
CPC分类号： H01L27/14609
摘要： A pixel circuit construction for image sensing includes a photosensor, an amplifier, a selector switch and, and a reset switch. The amplifier may be a single polycrystalline silicon (channel) transistor for high gain. The selector switch may also be a single polycrystalline silicon (channel) transistor for high conductivity. The reset switch may a single amorphous crystalline silicon (channel) transistor for low leakage current. The photosensor and amplifier may be connected to a shared bias line or may be connected to separate bias and drive lines, respectively. The selector and reset switches may be connected to a shared data line or may be connected to separate data and reset lines, respectively. Laser crystallization and rehydrogenation techniques are well suited to obtaining devices described herein. Threshold response is provided.
摘要翻译：用于图像感测的像素电路结构包括光电传感器，放大器，选择器开关和复位开关。放大器可以是用于高增益的单个多晶硅（沟道）晶体管。选择器开关也可以是用于高导电性的单个多晶硅（沟道）晶体管。复位开关可以是用于低漏电流的单个非晶态硅（沟道）晶体管。光传感器和放大器可以连接到共享偏置线，或者可以分别连接到单独的偏置线和驱动线。选择器和复位开关可以连接到共享数据线，或者可以分别连接到单独的数据和复位线。激光结晶和再氢化技术非常适合于获得本文所述的装置。提供阈值响应。

8. 发明授权

US6005238A Hybrid sensor pixel architecture with linearization circuit 失效
标题翻译：具有线性化电路的混合传感器像素架构
公开(公告)号：US6005238A
公开(公告)日：1999-12-21
申请号：US67942
申请日：1998-04-28
申请人： Ping Mei , Andrew J. Moore , Raj B. Apte , Steven E. Ready , Robert A. Street , James B. Boyce
发明人： Ping Mei , Andrew J. Moore , Raj B. Apte , Steven E. Ready , Robert A. Street , James B. Boyce
IPC分类号： H01L27/146 , H03F3/08 , H01J40/14
CPC分类号： H01L27/14609 , H03F3/082
摘要： A pixel circuit construction for image sensing includes a photosensor, an amplifier, a selector switch and, and a reset switch. The amplifier may be a single polycrystalline silicon (channel) transistor for high gain. The selector switch may also be a single polycrystalline silicon (channel) transistor for high conductivity. The reset switch may a single amorphous crystalline silicon (channel) transistor for low leakage current. The photosensor and amplifier may be connected to a shared bias line or may be connected to separate bias and drive lines, respectively. The selector and reset switches may be connected to a shared data line or may be connected to separate data and reset lines, respectively. Laser crystallization and rehydrogenation techniques are well suited to obtaining devices described herein. Linearization of output response is provided.
摘要翻译：用于图像感测的像素电路结构包括光电传感器，放大器，选择器开关和复位开关。放大器可以是用于高增益的单个多晶硅（沟道）晶体管。选择器开关也可以是用于高导电性的单个多晶硅（沟道）晶体管。复位开关可以是用于低漏电流的单个非晶态硅（沟道）晶体管。光传感器和放大器可以连接到共享偏置线，或者可以分别连接到单独的偏置线和驱动线。选择器和复位开关可以连接到共享数据线，或者可以分别连接到单独的数据和复位线。激光结晶和再氢化技术非常适合于获得本文所述的装置。提供输出响应的线性化。

9. 发明授权

US07811692B2 Micro-machined fuel cells 有权
标题翻译：微加工燃料电池
公开(公告)号：US07811692B2
公开(公告)日：2010-10-12
申请号：US12257820
申请日：2008-10-24
申请人： Raj B. Apte , David G. Duff , Christian G. Van de Walle , Jeng Ping Lu , Alberto Salleo , Stephen D. White
发明人： Raj B. Apte , David G. Duff , Christian G. Van de Walle , Jeng Ping Lu , Alberto Salleo , Stephen D. White
IPC分类号： H01M8/22
CPC分类号： H01M8/1016 , H01M8/1004 , H01M8/1097 , H01M8/241 , H01M8/2418 , H01M8/242 , H01M8/2483 , Y02P70/56
摘要： An improved fuel cell is described. The invention addresses the problem of mechanical failure in thin electrolytes. One embodiment varies the thickness of the electrolyte and positions at least either the anode or cathode in the recessed region to provide a short travel distance for ions traveling from the anode to the cathode or from the cathode to the anode. A second embodiment uses a uniquely shaped manifold cover to allow close positioning of the anode to the cathode. Using the described structures results in a substantial improvement in fuel cell reliability and performance.
摘要翻译：描述了改进的燃料电池。本发明解决了薄电解液中机械故障的问题。一个实施例改变电解质的厚度并且在凹陷区域中至少位于阳极或阴极之间，以便为从阳极到阴极或从阴极到阳极的离子提供短的行进距离。第二实施例使用独特形状的歧管盖，以允许阳极到阴极的紧密定位。使用所述结构可以显着提高燃料电池的可靠性和性能。

10. 发明申请

US20090047558A1 MICRO-MACHINED FUEL CELLS 有权
标题翻译：微机械燃料电池
公开(公告)号：US20090047558A1
公开(公告)日：2009-02-19
申请号：US12257820
申请日：2008-10-24
申请人： Raj B. Apte , David G. Duff , Christian G. Van de Walle , Jeng Ping Lu , Alberto Salleo , Stephen D. White
发明人： Raj B. Apte , David G. Duff , Christian G. Van de Walle , Jeng Ping Lu , Alberto Salleo , Stephen D. White
IPC分类号： H01M8/22 , H01M8/10
CPC分类号： H01M8/1016 , H01M8/1004 , H01M8/1097 , H01M8/241 , H01M8/2418 , H01M8/242 , H01M8/2483 , Y02P70/56
摘要： An improved fuel cell is described. The invention addresses the problem of mechanical failure in thin electrolytes. One embodiment varies the thickness of the electrolyte and positions at least either the anode or cathode in the recessed region to provide a short travel distance for ions traveling from the anode to the cathode or from the cathode to the anode. A second embodiment uses a uniquely shaped manifold cover to allow close positioning of the anode to the cathode. Using the described structures results in a substantial improvement in fuel cell reliability and performance.
摘要翻译：描述了改进的燃料电池。本发明解决了薄电解液中机械故障的问题。一个实施例改变电解质的厚度并且在凹陷区域中至少位于阳极或阴极之间，以便为从阳极到阴极或从阴极到阳极的离子提供短的行进距离。第二实施例使用独特形状的歧管盖，以允许阳极到阴极的紧密定位。使用所述结构可以显着提高燃料电池的可靠性和性能。

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