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1. 发明授权

US07459225B2 Micro-machined fuel cells 有权
标题翻译：微加工燃料电池
公开(公告)号：US07459225B2
公开(公告)日：2008-12-02
申请号：US10722156
申请日：2003-11-24
申请人： Raj B. Apte , David G. Duff , Christian G. Van de Walle , Jeng Ping Lu , Alberto Salleo , Stephen D. White
发明人： Raj B. Apte , David G. Duff , Christian G. Van de Walle , Jeng Ping Lu , Alberto Salleo , Stephen D. White
IPC分类号： H01M8/10
CPC分类号： H01M8/1016 , H01M8/1004 , H01M8/1097 , H01M8/241 , H01M8/2418 , H01M8/242 , H01M8/2483 , Y02P70/56
摘要： An improved fuel cell is described. The invention addresses the problem of mechanical failure in thin electrolytes. One embodiment varies the thickness of the electrolyte and positions at least either the anode or cathode in the recessed region to provide a short travel distance for ions traveling from the anode to the cathode or from the cathode to the anode. A second embodiment uses a uniquely shaped manifold cover to allow close positioning of the anode to the cathode. Using the described structures results in a substantial improvement in fuel cell reliability and performance.
摘要翻译：描述了改进的燃料电池。本发明解决了薄电解液中机械故障的问题。一个实施例改变电解质的厚度并且在凹陷区域中至少位于阳极或阴极之间，以便为从阳极到阴极或阴极到阳极的离子提供短的行进距离。第二实施例使用独特形状的歧管盖，以允许阳极到阴极的紧密定位。使用所述结构可以显着提高燃料电池的可靠性和性能。

2. 发明授权

US07811692B2 Micro-machined fuel cells 有权
标题翻译：微加工燃料电池
公开(公告)号：US07811692B2
公开(公告)日：2010-10-12
申请号：US12257820
申请日：2008-10-24
申请人： Raj B. Apte , David G. Duff , Christian G. Van de Walle , Jeng Ping Lu , Alberto Salleo , Stephen D. White
发明人： Raj B. Apte , David G. Duff , Christian G. Van de Walle , Jeng Ping Lu , Alberto Salleo , Stephen D. White
IPC分类号： H01M8/22
CPC分类号： H01M8/1016 , H01M8/1004 , H01M8/1097 , H01M8/241 , H01M8/2418 , H01M8/242 , H01M8/2483 , Y02P70/56
摘要： An improved fuel cell is described. The invention addresses the problem of mechanical failure in thin electrolytes. One embodiment varies the thickness of the electrolyte and positions at least either the anode or cathode in the recessed region to provide a short travel distance for ions traveling from the anode to the cathode or from the cathode to the anode. A second embodiment uses a uniquely shaped manifold cover to allow close positioning of the anode to the cathode. Using the described structures results in a substantial improvement in fuel cell reliability and performance.
摘要翻译：描述了改进的燃料电池。本发明解决了薄电解液中机械故障的问题。一个实施例改变电解质的厚度并且在凹陷区域中至少位于阳极或阴极之间，以便为从阳极到阴极或从阴极到阳极的离子提供短的行进距离。第二实施例使用独特形状的歧管盖，以允许阳极到阴极的紧密定位。使用所述结构可以显着提高燃料电池的可靠性和性能。

3. 发明申请

US20090047558A1 MICRO-MACHINED FUEL CELLS 有权
标题翻译：微机械燃料电池
公开(公告)号：US20090047558A1
公开(公告)日：2009-02-19
申请号：US12257820
申请日：2008-10-24
申请人： Raj B. Apte , David G. Duff , Christian G. Van de Walle , Jeng Ping Lu , Alberto Salleo , Stephen D. White
发明人： Raj B. Apte , David G. Duff , Christian G. Van de Walle , Jeng Ping Lu , Alberto Salleo , Stephen D. White
IPC分类号： H01M8/22 , H01M8/10
CPC分类号： H01M8/1016 , H01M8/1004 , H01M8/1097 , H01M8/241 , H01M8/2418 , H01M8/242 , H01M8/2483 , Y02P70/56
摘要： An improved fuel cell is described. The invention addresses the problem of mechanical failure in thin electrolytes. One embodiment varies the thickness of the electrolyte and positions at least either the anode or cathode in the recessed region to provide a short travel distance for ions traveling from the anode to the cathode or from the cathode to the anode. A second embodiment uses a uniquely shaped manifold cover to allow close positioning of the anode to the cathode. Using the described structures results in a substantial improvement in fuel cell reliability and performance.
摘要翻译：描述了改进的燃料电池。本发明解决了薄电解液中机械故障的问题。一个实施例改变电解质的厚度并且在凹陷区域中至少位于阳极或阴极之间，以便为从阳极到阴极或从阴极到阳极的离子提供短的行进距离。第二实施例使用独特形状的歧管盖，以允许阳极到阴极的紧密定位。使用所述结构可以显着提高燃料电池的可靠性和性能。

4. 发明授权

US06583449B2 Semiconductor device and method of forming a semiconductor device 有权
公开(公告)号：US06583449B2
公开(公告)日：2003-06-24
申请号：US09849233
申请日：2001-05-07
申请人： John E. Northrup , Christian G. Van de Walle
发明人： John E. Northrup , Christian G. Van de Walle
IPC分类号： H01L3300
CPC分类号： H01L33/305 , H01L29/2003 , H01L29/207 , H01L33/325
摘要： A semiconductor device includes group III-V layers formed over a substrate. At least one of the group III-V layers is doped with a dopant. The dopant includes a first dopant and one of a second dopant and an isovalent impurity. The first dopant has a covalent radius different in size than the covalent radii of each of the second dopant and the isovalent impurity.

5. 发明授权

US06389051B1 Structure and method for asymmetric waveguide nitride laser diode 有权
公开(公告)号：US06389051B1
公开(公告)日：2002-05-14
申请号：US09343939
申请日：1999-06-30
申请人： Christian G. Van de Walle , David P. Bour , Michael A. Kneissl , Linda T. Romano
发明人： Christian G. Van de Walle , David P. Bour , Michael A. Kneissl , Linda T. Romano
IPC分类号： H01S520
CPC分类号： B82Y20/00 , H01S5/2004 , H01S5/2009 , H01S5/2031 , H01S5/305 , H01S5/3054 , H01S5/34333
摘要： A structure and method for an asymmetric waveguide nitride laser diode without need of a p-type waveguide is disclosed. The need for a high aluminum tunnel barrier layer in the laser is avoided.

6. 发明申请

US20090042333A1 Structure and Method for Surfaced-Passivated Zinc-Oxide 有权
标题翻译：表面钝化氧化锌的结构与方法
公开(公告)号：US20090042333A1
公开(公告)日：2009-02-12
申请号：US12199378
申请日：2008-08-27
申请人： Christian G. Van de Walle , Peter Kiesel , Oliver Schmidt
发明人： Christian G. Van de Walle , Peter Kiesel , Oliver Schmidt
IPC分类号： H01L21/00
CPC分类号： G01N27/414 , B82Y10/00 , B82Y15/00 , B82Y30/00 , H01L29/225
摘要： A semiconductor device has a heterostructure including a first layer of semiconductor oxide material. A second layer of semiconductor oxide material is formed on the first layer of semiconductor oxide material such that a two dimensional electron gas builds up at an interface between the first and second materials. A passivation layer on the outer surface stabilizes the structure. The device also has a source contact and a drain contact.
摘要翻译：半导体器件具有包括第一半导体氧化物材料层的异质结构。半导体氧化物材料的第二层形成在第一半导体氧化物层上，使得二维电子气在第一和第二材料之间的界面积聚。外表面上的钝化层使结构稳定。该器件还具有源触点和漏极触点。

7. 发明授权

US07432526B2 Surface-passivated zinc-oxide based sensor 失效
标题翻译：表面钝化的氧化锌基传感器
公开(公告)号：US07432526B2
公开(公告)日：2008-10-07
申请号：US11314881
申请日：2005-12-20
申请人： Christian G. Van de Walle , Peter Kiesel , Oliver Schmidt
发明人： Christian G. Van de Walle , Peter Kiesel , Oliver Schmidt
IPC分类号： H01L29/10
CPC分类号： G01N27/414 , B82Y10/00 , B82Y15/00 , B82Y30/00 , H01L29/225
摘要： A semiconductor device has a heterostructure including a first layer of semiconductor oxide material. A second layer of semiconductor oxide material is formed on the first layer of semiconductor oxide material such that a two dimensional electron gas builds up at an interface between the first and second materials. A passivation layer on the outer surface stabilizes the structure. The device also has a source contact and a drain contact.
摘要翻译：半导体器件具有包括第一半导体氧化物材料层的异质结构。半导体氧化物材料的第二层形成在第一半导体氧化物层上，使得二维电子气在第一和第二材料之间的界面积聚。外表面上的钝化层使结构稳定。该器件还具有源触点和漏极触点。

8. 发明授权

US07123637B2 Nitride-based laser diode with GaN waveguide/cladding layer 有权
标题翻译：氮化镓基激光二极管与GaN波导/包层
公开(公告)号：US07123637B2
公开(公告)日：2006-10-17
申请号：US10394559
申请日：2003-03-20
申请人： Michael A. Kneissl , David P. Bour , Linda T. Romano , Christian G. Van de Walle
发明人： Michael A. Kneissl , David P. Bour , Linda T. Romano , Christian G. Van de Walle
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/0213 , H01S5/2009 , H01S5/2205 , H01S5/2231 , H01S5/3213 , H01S5/34333
摘要： A nitride-based laser diode structure utilizing a single GaN:Mg waveguide/cladding layer, in place of separate GaN:Mg waveguide and AlGaN:Mg cladding layers used in conventional nitride-based laser diode structures. When formed using an optimal thickness, the GaN:Mg layer produces an optical confinement that is comparable to or better than conventional structures. A thin AlGaN tunnel barrier layer is provided between the multiple quantum well and a lower portion of the GaN:Mg waveguide layer, which suppresses electron leakage without any significant decrease in optical confinement. A split-metal electrode is formed on the GaN:Mg upper waveguide structure to avoid absorption losses in the upper electrode metal. A pair of AlGaN:Si current blocking layer sections are located below the split-metal electrode sections, and separated by a gap located over the active region of the multiple quantum well.
摘要翻译：使用单个GaN：Mg波导/包覆层的氮化物基激光二极管结构代替用于常规氮化物基激光二极管结构中的单独的GaN：Mg波导和AlGaN：Mg包覆层。当使用最佳厚度形成时，GaN：Mg层产生与传统结构相当或更好的光学约束。在多量子阱和GaN：Mg波导层的下部之间提供薄的AlGaN隧道势垒层，其抑制电子泄漏，而不会明显减少光学限制。在GaN：Mg上部波导结构上形成裂缝金属电极，以避免上部电极金属中的吸收损失。一对AlGaN：Si电流阻挡层部分位于裂缝金属电极部分下方，并被位于多量子阱的有源区上方的间隙分开。

9. 发明授权

US06990132B2 Laser diode with metal-oxide upper cladding layer 有权
标题翻译：具有金属氧化物上覆层的激光二极管
公开(公告)号：US06990132B2
公开(公告)日：2006-01-24
申请号：US10394560
申请日：2003-03-20
申请人： Michael A. Kneissl , Linda T. Romano , Christian G. Van de Walle
发明人： Michael A. Kneissl , Linda T. Romano , Christian G. Van de Walle
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/2004 , H01S5/22 , H01S5/3214 , H01S5/343 , H01S5/34333
摘要： A nitride-based laser diode structure utilizing a metal-oxide (e.g., Indium-Tin-Oxide (ITO) or Zinc-Oxide (ZnO)) in place of p-doped AlGaN to form the upper cladding layer. An InGaN laser diode structure utilizes ITO upper cladding structure, with an SiO2 isolation structure formed on opposite sides of the ITO upper cladding structure to provide a lateral index step that is large enough to enable lateral single-mode operation. The lateral index step is further increased by slightly etching the GaN:Mg waveguide layer below the SiO2 isolation structure. An optional p-type current barrier layer (e.g., AlGaN:Mg having a thickness of approximately 20 nm) is formed between the InGaN-MQW region and a p-GaN upper waveguide layer to impede electron leakage from the InGaN-MQW region.
摘要翻译：使用金属氧化物（例如，铟锡氧化物（ITO）或氧化锌（ZnO））代替掺杂p型AlGaN的氮化物基激光二极管结构以形成上覆层。 InGaN激光二极管结构利用ITO上部包层结构，在ITO上部包层结构的相对侧上形成SiO 2隔离结构，以提供足够大的横向折射率步骤，以实现侧向单模操作。通过稍微蚀刻在SiO 2隔离结构之下的GaN：Mg波导层，进一步增加横向折射率梯度。在InGaN-MQW区和p-GaN上波导层之间形成可选的p型电流阻挡层（例如，厚度约为20nm的AlGaN：Mg），以阻止来自InGaN-MQW区的电子泄漏。

10. 发明授权

US06437374B1 Semiconductor device and method of forming a semiconductor device 有权
公开(公告)号：US06437374B1
公开(公告)日：2002-08-20
申请号：US09849227
申请日：2001-05-07
申请人： John E. Northrup , Christian G. Van de Walle
发明人： John E. Northrup , Christian G. Van de Walle
IPC分类号： H01L29861
CPC分类号： H01L33/305 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L29/2003 , H01L29/205 , H01L29/207 , H01S5/305
摘要： A semiconductor device includes group III-V layers formed over a substrate. At least one of the group III-V layers is doped with a dopant. The dopant includes a first dopant and one of a second dopant and an isovalent impurity. The first dopant has a covalent radius different in size than the covalent radii of each of the second dopant and the isovalent impurity.

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