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1. 发明授权

US06617261B2 Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates 有权
标题翻译：用于从蓝宝石衬底上的沟槽图案化GaN层制造GaN衬底的结构和方法
公开(公告)号：US06617261B2
公开(公告)日：2003-09-09
申请号：US10017599
申请日：2001-12-18
申请人： William S. Wong , David K. Biegelsen , Michael A. Kneissl
发明人： William S. Wong , David K. Biegelsen , Michael A. Kneissl
IPC分类号： H01L2348
CPC分类号： H01L21/6835 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/02664 , H01L2221/68363 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S2304/04 , H01S2304/12
摘要： Gallium nitride substrates are formed by etching a gallium nitride layer on a sapphire substrate or by selective area regrowth of a gallium nitride layer first deposited onto a sapphire substrate. The gallium nitride layers are bonded to a support substrate and a laser pulse directed through the transparent sapphire detaches the gallium nitride layers from the sapphire substrate. The gallium nitride layers are then detached from the support substrate forming freestanding gallium nitride substrates.
摘要翻译：通过蚀刻蓝宝石衬底上的氮化镓层或者首先沉积在蓝宝石衬底上的氮化镓层的选择性区域再生长来形成氮化镓衬底。将氮化镓层接合到支撑基板上，并且穿过透明蓝宝石的激光脉冲从蓝宝石衬底分离氮化镓层。然后从形成独立的氮化镓衬底的支撑衬底上分离出氮化镓层。

2. 发明授权

US08154009B1 Light emitting structure including high-al content MQWH 有权
标题翻译：发光结构包括高含量的MQWH
公开(公告)号：US08154009B1
公开(公告)日：2012-04-10
申请号：US12435342
申请日：2009-05-04
申请人： William S. Wong , Michael A. Kneissl , Zhihong Yang , Mark Teepe , Cliff Knollenberg
发明人： William S. Wong , Michael A. Kneissl , Zhihong Yang , Mark Teepe , Cliff Knollenberg
IPC分类号： H01L31/00
CPC分类号： H01L29/205 , B82Y20/00 , H01L29/155 , H01L29/2003 , H01L33/04 , H01L33/32 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S5/0224 , H01S5/34333
摘要： A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and a multiple quantum well heterostructure active region, allowing the use of high Al mole fraction in the active region, and therefore emission in the deep UV wavelengths.
摘要翻译：在GaN /蓝宝石模板结构上形成GaN / AlN超晶格，其部分作为用于后续层（例如深UV发光二极管）生长的应变消除层。 GaN / AlN超晶格减轻GaN /蓝宝石模板和多量子阱异质结构有源区之间的应变，允许在有源区中使用高Al摩尔分数，从而在深紫外波长中发射。

3. 发明授权

US06627921B2 Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials 有权
公开(公告)号：US06627921B2
公开(公告)日：2003-09-30
申请号：US10320823
申请日：2002-12-16
申请人： William S. Wong , Michael A. Kneissl
发明人： William S. Wong , Michael A. Kneissl
IPC分类号： H01L2715
CPC分类号： H01L21/2007 , H01L33/0079 , H01L2221/6835 , H01L2221/68363 , H01L2224/83894 , H01L2924/01019 , H01L2924/01079 , H01L2924/01327 , H01S5/0213 , H01S5/0215 , H01S5/0217 , H01S5/32341 , Y10S438/977 , H01L2924/00
摘要： A method for placing nitride laser diode arrays on a thermally and electrically conducting substrate is described. The method uses an excimer laser to detach the nitride laser diode from the sapphire growth substrate after an intermediate substrate has been attached to the side opposite the sapphire substrate. A secondary layer is subsequently deposited to act as a transfer support structure and bonding interface. The membrane is released from the intermediate substrate and a thermally conducting substrate is subsequently bonded to the side where the sapphire substrate was removed. Similarly, the secondary layer may be used as the new host substrate given an appropriate thickness is deposited prior to removal of the intermediate substrate.

4. 发明授权

US08088637B1 Method of manufacturing a semiconductor device including a superlattice strain relief layer 有权
标题翻译：包括超晶格应变消除层的半导体器件的制造方法
公开(公告)号：US08088637B1
公开(公告)日：2012-01-03
申请号：US12435333
申请日：2009-05-04
申请人： William S. Wong , Michael A. Kneissl , Zhihong Yang , Mark Teepe , Cliff Knollenberg
发明人： William S. Wong , Michael A. Kneissl , Zhihong Yang , Mark Teepe , Cliff Knollenberg
IPC分类号： H01L21/00
CPC分类号： H01L29/205 , B82Y20/00 , H01L29/155 , H01L29/2003 , H01L33/04 , H01L33/32 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S5/0224 , H01S5/34333
摘要： A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and a multiple quantum well heterostructure active region, allowing the use of high Al mole fraction in the active region, and therefore emission in the deep UV wavelengths.
摘要翻译：在GaN /蓝宝石模板结构上形成GaN / AlN超晶格，其部分作为用于后续层（例如深UV发光二极管）生长的应变消除层。 GaN / AlN超晶格减轻GaN /蓝宝石模板和多量子阱异质结构有源区之间的应变，允许在有源区中使用高Al摩尔分数，从而在深紫外波长中发射。

5. 发明申请

US20090053845A1 Method For Controlling The Structure And Surface Qualities Of A Thin Film And Product Produced Thereby 审中-公开
标题翻译：用于控制薄膜的结构和表面质量的方法以及由此产生的产品
公开(公告)号：US20090053845A1
公开(公告)日：2009-02-26
申请号：US12265379
申请日：2008-11-05
申请人： William S. Wong , Michael A. Kneissl , Mark Teepe
发明人： William S. Wong , Michael A. Kneissl , Mark Teepe
IPC分类号： H01L21/18
CPC分类号： H01L33/0079 , B82Y20/00 , H01L21/30621 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S5/32341 , H01S5/34333
摘要： A system and method for providing improved surface quality following removal of a substrate and template layers from a semiconductor structure provides an improved surface quality for a layer (such as a quantum well heterostructure active region) prior to bonding a heat sink/conductive substrate to the structure. Following the physical removal of a sapphire substrate, a sacrificial coating such as a spin-coat polymer photoresist is applied to an exposed GaN surface. This sacrificial coating provides a planar surface, generally parallel to the planes of the interfaces of the underlying layers. The sacrificial coating and etching conditions are selected such that the etch rate of the sacrificial coating approximately matches the etch rate of GaN and the underlying layers, so that the physical surface profile during etching approximates the physical surface profile of the sacrificial coating prior to etching. Following etching, a substrate is bonded to the exposed surface which acts as a heat sink and may be conductive providing for backside electrical contact to the active region.
摘要翻译：在从半导体结构去除衬底和模板层之后提供改进的表面质量的系统和方法在将散热器/导电衬底接合到衬底之前为层（例如量子阱异质结构有源区）提供改进的表面质量结构体。在物理去除蓝宝石衬底之后，将诸如旋涂聚合物光致抗蚀剂的牺牲涂层施加到暴露的GaN表面。该牺牲涂层提供了一般平行于下层的界面的平面的平面。选择牺牲涂层和蚀刻条件使得牺牲涂层的蚀刻速率近似与GaN和下面的层的蚀刻速率匹配，使得蚀刻期间的物理表面轮廓近似于蚀刻之前牺牲涂层的物理表面轮廓。在蚀刻之后，衬底被结合到作为散热器的暴露表面，并且可以是导电的，用于与有源区域的背面电接触。

6. 发明授权

US07087444B2 Method for integration of microelectronic components with microfluidic devices 有权
标题翻译：微电子元件与微流体器件集成的方法
公开(公告)号：US07087444B2
公开(公告)日：2006-08-08
申请号：US10320904
申请日：2002-12-16
申请人： William S. Wong , Michael L. Chabinyc , Steven E. Ready , Michael A. Kneissl , Mark R. Teepe
发明人： William S. Wong , Michael L. Chabinyc , Steven E. Ready , Michael A. Kneissl , Mark R. Teepe
IPC分类号： H01L21/00
CPC分类号： B81C1/00492 , B01L3/502707 , B01L2200/12 , B01L2300/0654 , B01L2300/0663 , B81B2201/058 , G01N21/01 , H01L2221/68363
摘要： A method of forming an integrated microelectronic device and a micro channel is provided. The method offers an inexpensive way of integrating devices that are usually incompatible during fabrication, a microchannel and a microelectronic structure such as an electro-optic light source, a detector or a MEMs device into a single integrated structure.
摘要翻译：提供一种形成集成的微电子器件和微通道的方法。该方法提供了将制造期间通常不兼容的器件，微通道和诸如电光源，检测器或MEM器件的微电子结构集成到单个集成结构中的廉价方式。

7. 发明授权

US07547925B2 Superlattice strain relief layer for semiconductor devices 有权
标题翻译：半导体器件的超晶格应变消除层
公开(公告)号：US07547925B2
公开(公告)日：2009-06-16
申请号：US11356769
申请日：2006-02-17
申请人： William S. Wong , Michael A. Kneissl , Zhihong Yang , Mark Teepe , Cliff Knollenberg
发明人： William S. Wong , Michael A. Kneissl , Zhihong Yang , Mark Teepe , Cliff Knollenberg
IPC分类号： H01L27/15
CPC分类号： H01L29/205 , B82Y20/00 , H01L29/155 , H01L29/2003 , H01L33/04 , H01L33/32 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S5/0224 , H01S5/34333
摘要： A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and a multiple quantum well heterostructure active region, allowing the use of high Al mole fraction in the active region, and therefore emission in the deep UV wavelengths.
摘要翻译：在GaN /蓝宝石模板结构上形成GaN / AlN超晶格，其部分作为用于后续层（例如深UV发光二极管）生长的应变消除层。 GaN / AlN超晶格减轻GaN /蓝宝石模板和多量子阱异质结构有源区之间的应变，允许在有源区中使用高Al摩尔分数，从而在深紫外波长中发射。

8. 发明授权

US07501299B2 Method for controlling the structure and surface qualities of a thin film and product produced thereby 有权
标题翻译：用于控制薄膜的结构和表面质量以及由此产生的产品的方法
公开(公告)号：US07501299B2
公开(公告)日：2009-03-10
申请号：US11356699
申请日：2006-02-17
申请人： William S. Wong , Michael A. Kneissl , Mark Teepe
发明人： William S. Wong , Michael A. Kneissl , Mark Teepe
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , B82Y20/00 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S5/32341 , H01S5/34333
摘要： A system and method for providing improved surface quality following removal of a substrate and template layers from a semiconductor structure provides an improved surface quality for a layer (such as a quantum well heterostructure active region) prior to bonding a heat sink/conductive substrate to the structure. Following the physical removal of a sapphire substrate, a sacrificial coating such as a spin-coat polymer photoresist is applied to an exposed GaN surface. This sacrificial coating provides a planar surface, generally parallel to the planes of the interfaces of the underlying layers. The sacrificial coating and etching conditions are selected such that the etch rate of the sacrificial coating approximately matches the etch rate of GaN and the underlying layers, so that the physical surface profile during etching approximates the physical surface profile of the sacrificial coating prior to etching. Following etching, a substrate is bonded to the exposed surface which acts as a heat sink and may be conductive providing for backside electrical contact to the active region.
摘要翻译：在从半导体结构去除衬底和模板层之后提供改进的表面质量的系统和方法在将散热器/导电衬底接合到衬底之前为层（例如量子阱异质结构有源区）提供改进的表面质量结构体。在物理去除蓝宝石衬底之后，将诸如旋涂聚合物光致抗蚀剂的牺牲涂层施加到暴露的GaN表面。该牺牲涂层提供了一般平行于下层的界面的平面的平面。选择牺牲涂层和蚀刻条件使得牺牲涂层的蚀刻速率近似与GaN和下面的层的蚀刻速率匹配，使得蚀刻期间的物理表面轮廓近似于蚀刻之前牺牲涂层的物理表面轮廓。在蚀刻之后，衬底被结合到作为散热器的暴露表面，并且可以是导电的，用于与有源区域的背面电接触。

9. 发明授权

US06562648B1 Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials 有权
标题翻译：将半导体薄膜分离和转移到不同基板材料上的结构和方法
公开(公告)号：US06562648B1
公开(公告)日：2003-05-13
申请号：US09648187
申请日：2000-08-23
申请人： William S. Wong , Michael A. Kneissl
发明人： William S. Wong , Michael A. Kneissl
IPC分类号： H01L2100
CPC分类号： H01L21/2007 , H01L33/0079 , H01L2221/6835 , H01L2221/68363 , H01L2224/83894 , H01L2924/01019 , H01L2924/01079 , H01L2924/01327 , H01S5/0213 , H01S5/0215 , H01S5/0217 , H01S5/32341 , Y10S438/977 , H01L2924/00
摘要： A method for placing nitride laser diode arrays on a thermally and electrically conducting substrate is described. The method uses an excimer laser to detach the nitride laser diode from the sapphire growth substrate after an intermediate substrate has been attached to the side opposite the sapphire substrate. A secondary layer is subsequently deposited to act as a transfer support structure and bonding interface. The membrane is released from the intermediate substrate and a thermally conducting substrate is subsequently bonded to the side where the sapphire substrate was removed. Similarly, the secondary layer may be used as the new host substrate given an appropriate thickness is deposited prior to removal of the intermediate substrate.
摘要翻译：描述了将氮化物激光二极管阵列放置在导热和导电的衬底上的方法。该方法使用准分子激光器在将中间衬底附着到与蓝宝石衬底相对的一侧附近后从蓝宝石生长衬底分离氮化物激光二极管。随后沉积次级层以用作转移支持结构和结合界面。膜从中间衬底释放，随后将导热衬底接合到除去蓝宝石衬底的一侧。类似地，二次层可以用作新的主体衬底，在移除中间衬底之前给定适当厚度的衬底。

10. 发明授权

US10066829B2 Electronic fabric 有权
公开(公告)号：US10066829B2
公开(公告)日：2018-09-04
申请号：US15139648
申请日：2016-04-27
申请人： William S. Wong , John S. Morreale
发明人： William S. Wong , John S. Morreale
IPC分类号： F21V33/00 , H05K1/03 , H05K1/18 , F21Y115/10 , F21Y107/70 , H05K1/11 , A41D27/08 , A41D1/00
摘要： An electronic fabric can include a first fabric layer, a second fabric layer, and a plurality of electronic devices. The first fabric layer can include a first set of conductive wires extending longitudinally in a first direction. The second fabric layer can define a plurality of apertures, can include a second set of conductive wires extending longitudinally in a second direction, and can be coupled to the first fabric layer such that each of the first set of conductive wires is arranged at a location of one of the plurality of apertures. Each electronic device can have a first terminal electrically coupled with one of the first set of conductive wires and a second terminal electrically coupled to one of the second set of conductive wires. The first terminal can be electrically coupled with the one of the first set of conductive wires through one of the plurality of apertures.

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