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1. 发明授权

US08154009B1 Light emitting structure including high-al content MQWH 有权
标题翻译：发光结构包括高含量的MQWH
公开(公告)号：US08154009B1
公开(公告)日：2012-04-10
申请号：US12435342
申请日：2009-05-04
申请人： William S. Wong , Michael A. Kneissl , Zhihong Yang , Mark Teepe , Cliff Knollenberg
发明人： William S. Wong , Michael A. Kneissl , Zhihong Yang , Mark Teepe , Cliff Knollenberg
IPC分类号： H01L31/00
CPC分类号： H01L29/205 , B82Y20/00 , H01L29/155 , H01L29/2003 , H01L33/04 , H01L33/32 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S5/0224 , H01S5/34333
摘要： A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and a multiple quantum well heterostructure active region, allowing the use of high Al mole fraction in the active region, and therefore emission in the deep UV wavelengths.
摘要翻译：在GaN /蓝宝石模板结构上形成GaN / AlN超晶格，其部分作为用于后续层（例如深UV发光二极管）生长的应变消除层。 GaN / AlN超晶格减轻GaN /蓝宝石模板和多量子阱异质结构有源区之间的应变，允许在有源区中使用高Al摩尔分数，从而在深紫外波长中发射。

2. 发明授权

US07547925B2 Superlattice strain relief layer for semiconductor devices 有权
标题翻译：半导体器件的超晶格应变消除层
公开(公告)号：US07547925B2
公开(公告)日：2009-06-16
申请号：US11356769
申请日：2006-02-17
申请人： William S. Wong , Michael A. Kneissl , Zhihong Yang , Mark Teepe , Cliff Knollenberg
发明人： William S. Wong , Michael A. Kneissl , Zhihong Yang , Mark Teepe , Cliff Knollenberg
IPC分类号： H01L27/15
CPC分类号： H01L29/205 , B82Y20/00 , H01L29/155 , H01L29/2003 , H01L33/04 , H01L33/32 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S5/0224 , H01S5/34333
摘要： A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and a multiple quantum well heterostructure active region, allowing the use of high Al mole fraction in the active region, and therefore emission in the deep UV wavelengths.
摘要翻译：在GaN /蓝宝石模板结构上形成GaN / AlN超晶格，其部分作为用于后续层（例如深UV发光二极管）生长的应变消除层。 GaN / AlN超晶格减轻GaN /蓝宝石模板和多量子阱异质结构有源区之间的应变，允许在有源区中使用高Al摩尔分数，从而在深紫外波长中发射。

3. 发明授权

US08088637B1 Method of manufacturing a semiconductor device including a superlattice strain relief layer 有权
标题翻译：包括超晶格应变消除层的半导体器件的制造方法
公开(公告)号：US08088637B1
公开(公告)日：2012-01-03
申请号：US12435333
申请日：2009-05-04
申请人： William S. Wong , Michael A. Kneissl , Zhihong Yang , Mark Teepe , Cliff Knollenberg
发明人： William S. Wong , Michael A. Kneissl , Zhihong Yang , Mark Teepe , Cliff Knollenberg
IPC分类号： H01L21/00
CPC分类号： H01L29/205 , B82Y20/00 , H01L29/155 , H01L29/2003 , H01L33/04 , H01L33/32 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S5/0224 , H01S5/34333
摘要： A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and a multiple quantum well heterostructure active region, allowing the use of high Al mole fraction in the active region, and therefore emission in the deep UV wavelengths.
摘要翻译：在GaN /蓝宝石模板结构上形成GaN / AlN超晶格，其部分作为用于后续层（例如深UV发光二极管）生长的应变消除层。 GaN / AlN超晶格减轻GaN /蓝宝石模板和多量子阱异质结构有源区之间的应变，允许在有源区中使用高Al摩尔分数，从而在深紫外波长中发射。

4. 发明申请

US20070108456A1 Superlattice strain relief layer for semiconductor devices 有权
标题翻译：半导体器件的超晶格应变消除层
公开(公告)号：US20070108456A1
公开(公告)日：2007-05-17
申请号：US11356769
申请日：2006-02-17
申请人： William Wong , Michael Kneissl , Zhihong Yang , Mark Teepe , Cliff Knollenberg
发明人： William Wong , Michael Kneissl , Zhihong Yang , Mark Teepe , Cliff Knollenberg
IPC分类号： H01L33/00 , H01L29/22
CPC分类号： H01L29/205 , B82Y20/00 , H01L29/155 , H01L29/2003 , H01L33/04 , H01L33/32 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S5/0224 , H01S5/34333
摘要： A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and a multiple quantum well heterostructure active region, allowing the use of high Al mole fraction in the active region, and therefore emission in the deep UV wavelengths.
摘要翻译：在GaN /蓝宝石模板结构上形成GaN / AlN超晶格，其部分作为用于后续层（例如深UV发光二极管）生长的应变消除层。 GaN / AlN超晶格减轻GaN /蓝宝石模板和多量子阱异质结构有源区之间的应变，允许在有源区中使用高Al摩尔分数，从而在深紫外波长中发射。

5. 发明授权

US07501299B2 Method for controlling the structure and surface qualities of a thin film and product produced thereby 有权
标题翻译：用于控制薄膜的结构和表面质量以及由此产生的产品的方法
公开(公告)号：US07501299B2
公开(公告)日：2009-03-10
申请号：US11356699
申请日：2006-02-17
申请人： William S. Wong , Michael A. Kneissl , Mark Teepe
发明人： William S. Wong , Michael A. Kneissl , Mark Teepe
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , B82Y20/00 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S5/32341 , H01S5/34333
摘要： A system and method for providing improved surface quality following removal of a substrate and template layers from a semiconductor structure provides an improved surface quality for a layer (such as a quantum well heterostructure active region) prior to bonding a heat sink/conductive substrate to the structure. Following the physical removal of a sapphire substrate, a sacrificial coating such as a spin-coat polymer photoresist is applied to an exposed GaN surface. This sacrificial coating provides a planar surface, generally parallel to the planes of the interfaces of the underlying layers. The sacrificial coating and etching conditions are selected such that the etch rate of the sacrificial coating approximately matches the etch rate of GaN and the underlying layers, so that the physical surface profile during etching approximates the physical surface profile of the sacrificial coating prior to etching. Following etching, a substrate is bonded to the exposed surface which acts as a heat sink and may be conductive providing for backside electrical contact to the active region.
摘要翻译：在从半导体结构去除衬底和模板层之后提供改进的表面质量的系统和方法在将散热器/导电衬底接合到衬底之前为层（例如量子阱异质结构有源区）提供改进的表面质量结构体。在物理去除蓝宝石衬底之后，将诸如旋涂聚合物光致抗蚀剂的牺牲涂层施加到暴露的GaN表面。该牺牲涂层提供了一般平行于下层的界面的平面的平面。选择牺牲涂层和蚀刻条件使得牺牲涂层的蚀刻速率近似与GaN和下面的层的蚀刻速率匹配，使得蚀刻期间的物理表面轮廓近似于蚀刻之前牺牲涂层的物理表面轮廓。在蚀刻之后，衬底被结合到作为散热器的暴露表面，并且可以是导电的，用于与有源区域的背面电接触。

6. 发明申请

US20090053845A1 Method For Controlling The Structure And Surface Qualities Of A Thin Film And Product Produced Thereby 审中-公开
标题翻译：用于控制薄膜的结构和表面质量的方法以及由此产生的产品
公开(公告)号：US20090053845A1
公开(公告)日：2009-02-26
申请号：US12265379
申请日：2008-11-05
申请人： William S. Wong , Michael A. Kneissl , Mark Teepe
发明人： William S. Wong , Michael A. Kneissl , Mark Teepe
IPC分类号： H01L21/18
CPC分类号： H01L33/0079 , B82Y20/00 , H01L21/30621 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S5/32341 , H01S5/34333
摘要： A system and method for providing improved surface quality following removal of a substrate and template layers from a semiconductor structure provides an improved surface quality for a layer (such as a quantum well heterostructure active region) prior to bonding a heat sink/conductive substrate to the structure. Following the physical removal of a sapphire substrate, a sacrificial coating such as a spin-coat polymer photoresist is applied to an exposed GaN surface. This sacrificial coating provides a planar surface, generally parallel to the planes of the interfaces of the underlying layers. The sacrificial coating and etching conditions are selected such that the etch rate of the sacrificial coating approximately matches the etch rate of GaN and the underlying layers, so that the physical surface profile during etching approximates the physical surface profile of the sacrificial coating prior to etching. Following etching, a substrate is bonded to the exposed surface which acts as a heat sink and may be conductive providing for backside electrical contact to the active region.
摘要翻译：在从半导体结构去除衬底和模板层之后提供改进的表面质量的系统和方法在将散热器/导电衬底接合到衬底之前为层（例如量子阱异质结构有源区）提供改进的表面质量结构体。在物理去除蓝宝石衬底之后，将诸如旋涂聚合物光致抗蚀剂的牺牲涂层施加到暴露的GaN表面。该牺牲涂层提供了一般平行于下层的界面的平面的平面。选择牺牲涂层和蚀刻条件使得牺牲涂层的蚀刻速率近似与GaN和下面的层的蚀刻速率匹配，使得蚀刻期间的物理表面轮廓近似于蚀刻之前牺牲涂层的物理表面轮廓。在蚀刻之后，衬底被结合到作为散热器的暴露表面，并且可以是导电的，用于与有源区域的背面电接触。

7. 发明申请

US20120280212A1 Semi-Polar Nitride-Based Light Emitting Structure and Method of Forming Same 有权
标题翻译：基于半极化氮化物的发光结构及其形成方法
公开(公告)号：US20120280212A1
公开(公告)日：2012-11-08
申请号：US13550504
申请日：2012-07-16
申请人： Andre Strittmatter , Noble M. Johnson , Mark Teepe , Christopher L. Chua , Zhihong Yang , John E. Northrup
发明人： Andre Strittmatter , Noble M. Johnson , Mark Teepe , Christopher L. Chua , Zhihong Yang , John E. Northrup
IPC分类号： H01L33/06
CPC分类号： H01L21/0262 , B82Y20/00 , H01L21/0237 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/0079 , H01L33/12 , H01L33/16 , H01S5/3202 , H01S5/34306 , H01S2304/12
摘要： A structure and method for producing same provides a solid-state light emitting device with suppressed lattice defects in epitaxially formed nitride layers over a non-c-plane oriented (e.g., semi-polar) template or substrate. A dielectric layer with “window” openings or trenches provides significant suppression of all diagonally running defects during growth. Posts of appropriate height and spacing may further provide suppression of vertically running defects. A layer including gallium nitride is formed over the dielectric layer, and polished to provide a planar growth surface with desired roughness. A tri-layer indium gallium nitride active region is employed. For laser diode embodiments, a relatively thick aluminum gallium nitride cladding layer is provided over the gallium nitride layer.
摘要翻译：其结构和制造方法提供了在非c面取向（例如，半极性）模板或衬底上的外延形成的氮化物层中具有抑制的晶格缺陷的固态发光器件。具有窗口或沟槽的电介质层在生长期间提供对所有对角线运行的缺陷的显着抑制。适当高度和间距的柱可进一步抑制垂直运行的缺陷。在电介质层上形成包含氮化镓的层，并且被抛光以提供具有期望粗糙度的平面生长表面。采用三层氮化铟镓活性区。对于激光二极管实施例，在氮化镓层上方设置相对厚的氮化镓铝覆层。

8. 发明申请

US20110291074A1 Semi-Polar Nitride-Based Light Emitting Structure and Method of Forming Same 有权
标题翻译：基于半极化氮化物的发光结构及其形成方法
公开(公告)号：US20110291074A1
公开(公告)日：2011-12-01
申请号：US12791552
申请日：2010-06-01
申请人： Andre Strittmatter , Noble M. Johnson , Mark Teepe , Christopher L. Chua , Zhihong Yang , John E. Northrup
发明人： Andre Strittmatter , Noble M. Johnson , Mark Teepe , Christopher L. Chua , Zhihong Yang , John E. Northrup
IPC分类号： H01L33/06 , H01L21/20
CPC分类号： H01L21/0262 , B82Y20/00 , H01L21/0237 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/0079 , H01L33/12 , H01L33/16 , H01S5/3202 , H01S5/34306 , H01S2304/12
摘要： A structure and method for producing same provides a solid-state light emitting device with suppressed lattice defects in epitaxially formed nitride layers over a non-c-plane oriented (e.g., semi-polar) template or substrate. A dielectric layer with “window” openings or trenches provides significant suppression of all diagonally running defects during growth. Posts of appropriate height and spacing may further provide suppression of vertically running defects. A layer including gallium nitride is formed over the dielectric layer, and polished to provide a planar growth surface with desired roughness. A tri-layer indium gallium nitride active region is employed. For laser diode embodiments, a relatively thick aluminum gallium nitride cladding layer is provided over the gallium nitride layer.
摘要翻译：其结构和制造方法提供了在非c面取向（例如，半极性）模板或衬底上的外延形成的氮化物层中具有抑制的晶格缺陷的固态发光器件。具有“窗口”开口或沟槽的电介质层在生长期间提供对所有对角线运行的缺陷的显着抑制。适当高度和间距的柱可进一步抑制垂直运行的缺陷。在电介质层上形成包含氮化镓的层，并且被抛光以提供具有期望粗糙度的平面生长表面。采用三层氮化铟镓活性区。对于激光二极管实施例，在氮化镓层上方设置相对厚的氮化镓铝覆层。

9. 发明授权

US08330144B2 Semi-polar nitride-based light emitting structure and method of forming same 有权
标题翻译：半极性氮化物基发光结构及其形成方法
公开(公告)号：US08330144B2
公开(公告)日：2012-12-11
申请号：US13550504
申请日：2012-07-16
申请人： Andre Strittmatter , Noble M. Johnson , Mark Teepe , Christopher L. Chua , Zhihong Yang , John E. Northrup
发明人： Andre Strittmatter , Noble M. Johnson , Mark Teepe , Christopher L. Chua , Zhihong Yang , John E. Northrup
IPC分类号： H01L21/00
CPC分类号： H01L21/0262 , B82Y20/00 , H01L21/0237 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/0079 , H01L33/12 , H01L33/16 , H01S5/3202 , H01S5/34306 , H01S2304/12
摘要： A structure and method for producing same provides a solid-state light emitting device with suppressed lattice defects in epitaxially formed nitride layers over a non-c-plane oriented (e.g., semi-polar) template or substrate. A dielectric layer with “window” openings or trenches provides significant suppression of all diagonally running defects during growth. Posts of appropriate height and spacing may further provide suppression of vertically running defects. A layer including gallium nitride is formed over the dielectric layer, and polished to provide a planar growth surface with desired roughness. A tri-layer indium gallium nitride active region is employed. For laser diode embodiments, a relatively thick aluminum gallium nitride cladding layer is provided over the gallium nitride layer.
摘要翻译：其结构和制造方法提供了在非c面取向（例如，半极性）模板或衬底上的外延形成的氮化物层中具有抑制的晶格缺陷的固态发光器件。具有窗口或沟槽的电介质层在生长期间提供对所有对角线运行的缺陷的显着抑制。适当高度和间距的柱可进一步抑制垂直运行的缺陷。在电介质层上形成包含氮化镓的层，并且被抛光以提供具有期望粗糙度的平面生长表面。采用三层氮化铟镓活性区。对于激光二极管实施例，在氮化镓层上方设置相对厚的氮化镓铝覆层。

10. 发明授权

US08247249B2 Semi-polar nitride-based light emitting structure and method of forming same 有权
标题翻译：半极性氮化物基发光结构及其形成方法
公开(公告)号：US08247249B2
公开(公告)日：2012-08-21
申请号：US12791552
申请日：2010-06-01
申请人： Andre Strittmatter , Noble M. Johnson , Mark Teepe , Christopher L. Chua , Zhihong Yang , John E. Northrup
发明人： Andre Strittmatter , Noble M. Johnson , Mark Teepe , Christopher L. Chua , Zhihong Yang , John E. Northrup
IPC分类号： H01L21/00
CPC分类号： H01L21/0262 , B82Y20/00 , H01L21/0237 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/0079 , H01L33/12 , H01L33/16 , H01S5/3202 , H01S5/34306 , H01S2304/12
摘要： A structure and method for producing same provides a solid-state light emitting device with suppressed lattice defects in epitaxially formed nitride layers over a non-c-plane oriented (e.g., semi-polar) template or substrate. A dielectric layer with “window” openings or trenches provides significant suppression of all diagonally running defects during growth. Posts of appropriate height and spacing may further provide suppression of vertically running defects. A layer including gallium nitride is formed over the dielectric layer, and polished to provide a planar growth surface with desired roughness. A tri-layer indium gallium nitride active region is employed. For laser diode embodiments, a relatively thick aluminum gallium nitride cladding layer is provided over the gallium nitride layer.
摘要翻译：其结构和制造方法提供了在非c面取向（例如，半极性）模板或衬底上的外延形成的氮化物层中具有抑制的晶格缺陷的固态发光器件。具有“窗口”开口或沟槽的电介质层在生长期间提供对所有对角线运行的缺陷的显着抑制。适当高度和间距的柱可进一步抑制垂直运行的缺陷。在电介质层上形成包含氮化镓的层，并且被抛光以提供具有期望粗糙度的平面生长表面。采用三层氮化铟镓活性区。对于激光二极管实施例，在氮化镓层上方设置相对厚的氮化镓铝覆层。

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