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    • 5. 发明授权
    • Method for controlling the structure and surface qualities of a thin film and product produced thereby
    • 用于控制薄膜的结构和表面质量以及由此产生的产品的方法
    • US07501299B2
    • 2009-03-10
    • US11356699
    • 2006-02-17
    • William S. WongMichael A. KneisslMark Teepe
    • William S. WongMichael A. KneisslMark Teepe
    • H01L21/00
    • H01L33/0079B82Y20/00H01S5/0213H01S5/0216H01S5/0217H01S5/32341H01S5/34333
    • A system and method for providing improved surface quality following removal of a substrate and template layers from a semiconductor structure provides an improved surface quality for a layer (such as a quantum well heterostructure active region) prior to bonding a heat sink/conductive substrate to the structure. Following the physical removal of a sapphire substrate, a sacrificial coating such as a spin-coat polymer photoresist is applied to an exposed GaN surface. This sacrificial coating provides a planar surface, generally parallel to the planes of the interfaces of the underlying layers. The sacrificial coating and etching conditions are selected such that the etch rate of the sacrificial coating approximately matches the etch rate of GaN and the underlying layers, so that the physical surface profile during etching approximates the physical surface profile of the sacrificial coating prior to etching. Following etching, a substrate is bonded to the exposed surface which acts as a heat sink and may be conductive providing for backside electrical contact to the active region.
    • 在从半导体结构去除衬底和模板层之后提供改进的表面质量的系统和方法在将散热器/导电衬底接合到衬底之前为层(例如量子阱异质结构有源区)提供改进的表面质量 结构体。 在物理去除蓝宝石衬底之后,将诸如旋涂聚合物光致抗蚀剂的牺牲涂层施加到暴露的GaN表面。 该牺牲涂层提供了一般平行于下层的界面的平面的平面。 选择牺牲涂层和蚀刻条件使得牺牲涂层的蚀刻速率近似与GaN和下面的层的蚀刻速率匹配,使得蚀刻期间的物理表面轮廓近似于蚀刻之前牺牲涂层的物理表面轮廓。 在蚀刻之后,衬底被结合到作为散热器的暴露表面,并且可以是导电的,用于与有源区域的背面电接触。
    • 6. 发明申请
    • Method For Controlling The Structure And Surface Qualities Of A Thin Film And Product Produced Thereby
    • 用于控制薄膜的结构和表面质量的方法以及由此产生的产品
    • US20090053845A1
    • 2009-02-26
    • US12265379
    • 2008-11-05
    • William S. WongMichael A. KneisslMark Teepe
    • William S. WongMichael A. KneisslMark Teepe
    • H01L21/18
    • H01L33/0079B82Y20/00H01L21/30621H01S5/0213H01S5/0216H01S5/0217H01S5/32341H01S5/34333
    • A system and method for providing improved surface quality following removal of a substrate and template layers from a semiconductor structure provides an improved surface quality for a layer (such as a quantum well heterostructure active region) prior to bonding a heat sink/conductive substrate to the structure. Following the physical removal of a sapphire substrate, a sacrificial coating such as a spin-coat polymer photoresist is applied to an exposed GaN surface. This sacrificial coating provides a planar surface, generally parallel to the planes of the interfaces of the underlying layers. The sacrificial coating and etching conditions are selected such that the etch rate of the sacrificial coating approximately matches the etch rate of GaN and the underlying layers, so that the physical surface profile during etching approximates the physical surface profile of the sacrificial coating prior to etching. Following etching, a substrate is bonded to the exposed surface which acts as a heat sink and may be conductive providing for backside electrical contact to the active region.
    • 在从半导体结构去除衬底和模板层之后提供改进的表面质量的系统和方法在将散热器/导电衬底接合到衬底之前为层(例如量子阱异质结构有源区)提供改进的表面质量 结构体。 在物理去除蓝宝石衬底之后,将诸如旋涂聚合物光致抗蚀剂的牺牲涂层施加到暴露的GaN表面。 该牺牲涂层提供了一般平行于下层的界面的平面的平面。 选择牺牲涂层和蚀刻条件使得牺牲涂层的蚀刻速率近似与GaN和下面的层的蚀刻速率匹配,使得蚀刻期间的物理表面轮廓近似于蚀刻之前牺牲涂层的物理表面轮廓。 在蚀刻之后,衬底被结合到作为散热器的暴露表面,并且可以是导电的,用于与有源区域的背面电接触。