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    • 1. 发明申请
    • Particle Reduction Through Gas and Plasma Source Control
    • 通过气体和等离子体源控制减少粒子
    • US20080302652A1
    • 2008-12-11
    • US12132294
    • 2008-06-03
    • William Robert EntleyXing ChenAli ShajiiKaveh BakhtariAndrew Cowe
    • William Robert EntleyXing ChenAli ShajiiKaveh BakhtariAndrew Cowe
    • H05H1/24
    • H01J37/3299H01J37/32357H01J37/3244H01J37/32449
    • A system for producing excited gases for introduction to a semiconductor processing chamber. The system includes a plasma source for generating a plasma. The plasma source includes a plasma chamber and a gas inlet for receiving process gases from a gas source. A gas flow rate controller is coupled to the gas inlet for controlling an inlet flow rate of the process gases from the gas source to the plasma chamber via the gas inlet. The system includes a control loop for detecting a transition from a first process gas to a second process gas and for adjusting the inlet flow rate of the second process gas from about 0 sccm to about 10,000 sccm over a period of time greater than about 300 milliseconds to maintain transient heat flux loads applied by the plasma to an inner surface of the plasma chamber below a vaporization temperature of the plasma chamber.
    • 一种用于产生用于引入半导体处理室的激发气体的系统。 该系统包括用于产生等离子体的等离子体源。 等离子体源包括等离子体室和用于从气体源接收工艺气体的气体入口。 气体流量控制器耦合到气体入口,用于经由气体入口控制从气体源到等离子体室的处理气体的入口流量。 该系统包括用于检测从第一处理气体到第二处理气体的转变的控制回路,并且用于在大于约300毫秒的时间段内将第二处理气体的入口流量从约0sccm至约10,000sccm调节 以将等离子体施加的瞬态热通量负载保持在等离子体室的内表面低于等离子体室的汽化温度。