专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07959735B2 Susceptor with insulative inserts 失效
标题翻译：具有绝缘插入物的受体
公开(公告)号：US07959735B2
公开(公告)日：2011-06-14
申请号：US11672955
申请日：2007-02-08
申请人： William N. Sterling , Lan Duong , Gaku Furuta
发明人： William N. Sterling , Lan Duong , Gaku Furuta
IPC分类号： C23C16/00 , H01L21/683 , H01T23/00
CPC分类号： H01L21/68757 , H01J2237/0206 , H01L21/68785
摘要： A method and apparatus for reducing arcing in a plasma processing system when processing large area substrates which contain one or more holes. In one embodiment of the invention, a substrate support member includes an electrically insulating insert located beneath a hole in an insulating, large area substrate. The insulating insert is made of aluminum oxide, and is located within a hole in the support member such that the insert is disposed beneath a hole in a glass substrate. The substrate support member is made of aluminum with an anodized surface.
摘要翻译：一种用于在处理包含一个或多个孔的大面积基板时减小等离子体处理系统中的电弧的方法和装置。在本发明的一个实施例中，衬底支撑构件包括位于绝缘的大面积衬底中的孔下方的电绝缘插入件。绝缘插件由氧化铝制成，并且位于支撑构件的孔内，使得插入件设置在玻璃基板的孔的下方。衬底支撑构件由具有阳极氧化表面的铝制成。

2. 发明申请

US20080194169A1 SUSCEPTOR WITH INSULATIVE INSERTS 失效
标题翻译：具有绝缘插件的SUSCEPTOR
公开(公告)号：US20080194169A1
公开(公告)日：2008-08-14
申请号：US11672955
申请日：2007-02-08
申请人： William N. Sterling , Lan Duong , Gaku Furuta
发明人： William N. Sterling , Lan Duong , Gaku Furuta
IPC分类号： H01J9/38
CPC分类号： H01L21/68757 , H01J2237/0206 , H01L21/68785
摘要： A method and apparatus for reducing arcing in a plasma processing system when processing large area substrates which contain one or more holes. In one embodiment of the invention, a substrate support member includes an electrically insulating insert located beneath a hole in an insulating, large area substrate. The insulating insert is made of aluminum oxide, and is located within a hole in the support member such that the insert is disposed beneath a hole in a glass substrate. The substrate support member is made of aluminum with an anodized surface.
摘要翻译：一种用于在处理包含一个或多个孔的大面积基板时减小等离子体处理系统中的电弧的方法和装置。在本发明的一个实施例中，衬底支撑构件包括位于绝缘的大面积衬底中的孔下方的电绝缘插入件。绝缘插件由氧化铝制成，并且位于支撑构件的孔内，使得插入件设置在玻璃基板的孔的下方。衬底支撑构件由具有阳极氧化表面的铝制成。

3. 发明授权

US09382621B2 Ground return for plasma processes 有权
标题翻译：等离子体工艺的接地回路
公开(公告)号：US09382621B2
公开(公告)日：2016-07-05
申请号：US12700484
申请日：2010-02-04
申请人： Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
发明人： Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
IPC分类号： C23C16/509 , C23C16/458 , H01J37/32 , H01L21/67
CPC分类号： C23C16/5096 , C23C16/4585 , H01J37/32091 , H01J37/32174 , H01J37/32568 , H01L21/67069
摘要： A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.
摘要翻译：描述了一种用于提供用于两个电极之间的电流的电对称接地或返回路径的方法和装置。该装置至少包括耦合到电极之一和处理室的侧壁和/或底部之间的射频（RF）装置。该方法包括相对于另一个电极移动一个电极，并且基于使用耦合到侧壁和电极的RF器件中的一个或两个的位移电极实现接地返回路径，耦合到腔室的底部的RF器件和电极或其组合。

4. 发明申请

US20090283039A1 ROBUST OUTLET PLUMBING FOR HIGH POWER FLOW REMOTE PLASMA SOURCE 审中-公开
标题翻译：大功率流量远程等离子体源的稳健出口
公开(公告)号：US20090283039A1
公开(公告)日：2009-11-19
申请号：US12467477
申请日：2009-05-18
申请人： JOHN M. WHITE , Soo Young Choi , Beom Soo Park , Gaku Furuta , Young Jin Choi , Robin L. Tiner
发明人： JOHN M. WHITE , Soo Young Choi , Beom Soo Park , Gaku Furuta , Young Jin Choi , Robin L. Tiner
IPC分类号： C23C16/54 , F28D7/00
CPC分类号： F28D7/00 , C23C16/4405 , F28D2021/0078 , F28F9/26
摘要： The present invention generally includes a coupling between components. When igniting a plasma remote from a processing chamber, the reactive gas ions may travel to the processing chamber through numerous components. The reactive gas ions may be quite hot and cause the various components to become very hot and thus, the seals between apparatus components may fail. Therefore, it may be beneficial to cool any metallic components through which the reactive gas ions may travel. However, at the interface between the cooled metallic component and a ceramic component, the ceramic component may experience a temperature gradient sufficient to crack the ceramic material due to the heat of the reactive gas ions and the coolness of the metallic component. Therefore, extending a flange of the metallic component into the ceramic component may lessen the temperature gradient at the interface and reduce cracking of the ceramic component.
摘要翻译：本发明通常包括组件之间的联接。当点燃离开处理室的等离子体时，反应气体离子可通过许多部件行进到处理室。反应气体离子可能相当热，并导致各种部件变得非常热，因此，装置部件之间的密封可能失效。因此，冷却反应气体离子可以通过其移动的任何金属组分可能是有益的。然而，在冷却的金属组分和陶瓷组分之间的界面处，由于反应气体离子的热量和金属组分的冷却，陶瓷组分可能经历足以破坏陶瓷材料的温度梯度。因此，将金属部件的凸缘延伸到陶瓷部件中可以减小界面处的温度梯度并减少陶瓷部件的开裂。

5. 发明申请

US20090023241A1 CLEAN RATE IMPROVEMENT BY PRESSURE CONTROLLED REMOTE PLASMA SOURCE 审中-公开
标题翻译：压力控制远程等离子体源的清洁率改进
公开(公告)号：US20090023241A1
公开(公告)日：2009-01-22
申请号：US12174408
申请日：2008-07-16
申请人： Gaku Furuta , Liwei Li , Takao Hashimoto , Soo Young Choi
发明人： Gaku Furuta , Liwei Li , Takao Hashimoto , Soo Young Choi
IPC分类号： H01L21/20 , H05H1/00
CPC分类号： B08B7/0035 , C23C16/24 , C23C16/4405
摘要： The present invention generally comprises a method for cleaning a large area substrate processing chamber. As chamber volume increases, it has surprisingly been found that simply scaling up the cleaning conditions may not effectively clean silicon from the exposed chamber surfaces. Undesired silicon deposits on exposed chamber surfaces may lead to contamination in solar panel formation. Increasing the pressure of the chamber to about 10 Torr or greater while maintaining the chamber at a temperature between about 150 degrees Celsius and 250 degrees Celsius increases plasma cleaning effectiveness such that silicon deposits are removed from the chamber. The combination of high pressure and low temperature may reduce substrate contamination without sacrificing substrate throughput in solar panel fabrication.
摘要翻译：本发明通常包括清洗大面积基板处理室的方法。随着室体积的增加，令人惊讶地发现，简单地放大清洁条件可能不能有效地从暴露的室表面清洁硅。暴露的室表面上的不期望的硅沉积物可能导致太阳能电池板形成中的污染。将室的压力提高到约10托或更高，同时将室保持在约150摄氏度和250摄氏度之间的温度，增加等离子体清洁效果，使得硅沉积物从室中移除。高压和低温的组合可以减少基板污染，而不会牺牲太阳能电池板制造中的基板产量。

6. 发明申请

US20080286463A1 RF SHUTTER 有权
标题翻译：射频快门
公开(公告)号：US20080286463A1
公开(公告)日：2008-11-20
申请号：US12040298
申请日：2008-02-29
申请人： ROBIN L. TINER , Gaku Furuta , Yukinobu Adachi
发明人： ROBIN L. TINER , Gaku Furuta , Yukinobu Adachi
IPC分类号： C23C16/453
CPC分类号： H01J37/32082 , H01J37/32623 , H01J37/32651 , H01J2237/0206
摘要： The present invention generally comprises an RF shutter assembly for use in a plasma processing apparatus. The RF shutter assembly may reduce the amount of plasma creep below the substrate and shadow frame during processing, thereby reducing the amount of deposition that occurs on undesired surfaces. By reducing the amount of deposition on undesired surfaces, particle flaking and thus, substrate contamination may be reduced.
摘要翻译：本发明通常包括用于等离子体处理装置的RF快门组件。 RF快门组件可以在处理期间减少基板和阴影框架下方的等离子体蠕变的量，从而减少在不期望的表面上发生的沉积量。通过减少不期望的表面上的沉积量，可能会降低颗粒剥落，从而可能降低底物污染。

7. 发明申请

US20080178807A1 GAS DISTRIBUTION UNIFORMITY IMPROVEMENT BY BAFFLE PLATE WITH MULTI-SIZE HOLES FOR LARGE SIZE PECVD SYSTEMS 审中-公开
标题翻译：气体分布均匀度改进由具有多个尺寸PECVD系统的多尺寸孔板
公开(公告)号：US20080178807A1
公开(公告)日：2008-07-31
申请号：US12099112
申请日：2008-04-07
申请人： Qunhua Wang , Li Hou , Sanjay Yadav , Gaku Furuta , Kenji Omori , Soo Young Choi , John M. White
发明人： Qunhua Wang , Li Hou , Sanjay Yadav , Gaku Furuta , Kenji Omori , Soo Young Choi , John M. White
IPC分类号： C23C16/00
CPC分类号： H01J37/3244 , C23C16/45565 , C23F4/00 , H01J37/32449
摘要： Embodiments of a gas distribution plate for distributing gas in a processing chamber for large area substrates are provided. The embodiments describe a gas distribution plate assembly for a plasma processing chamber having a cover plate comprises a diffuser plate having an upstream side, a downstream side facing a processing region, and a plurality of gas passages formed through the diffuser plate, and a baffle plate, placed between the cover plate of the process chamber and the diffuser plate, having a plurality of holes extending from the upper surface to the lower surface of the baffle plate, wherein the plurality of holes have at least two sizes. The small pinholes of the baffle plate are used to allow sufficient pass-through of gas mixture, while the large holes of the baffle plate are used to improve the process uniformity across the substrate.
摘要翻译：提供了用于在大面积基板的处理室中分配气体的气体分配板的实施例。实施方式描述了一种用于等离子体处理室的气体分配板组件，其具有盖板，该盖板包括具有上游侧，面向加工区域的下游侧和通过扩散板形成的多个气体通道的扩散板，以及挡板，放置在处理室的盖板和扩散板之间，具有从挡板的上表面延伸到下表面的多个孔，其中多个孔具有至少两个尺寸。挡板的小针孔用于允许气体混合物的充分通过，而挡板的大孔用于改善基板上的工艺均匀性。

8. 发明授权

US09243328B2 Susceptor with roll-formed surface and method for making same 有权
标题翻译：具有辊形表面的受体和制造它的方法
公开(公告)号：US09243328B2
公开(公告)日：2016-01-26
申请号：US12407766
申请日：2009-03-19
申请人： Gaku Furuta , David Atchley , Soo Young Choi , John M. White
发明人： Gaku Furuta , David Atchley , Soo Young Choi , John M. White
IPC分类号： B01J19/08 , C23C16/458
CPC分类号： C23C16/4581
摘要： The present invention generally provides apparatus for supporting a large area substrate in a plasma reactor. One embodiment, a substrate support for using in a plasma reactor includes an electrically conductive body has a top surface with a plurality of roll-formed indents.
摘要翻译：本发明通常提供用于在等离子体反应器中支撑大面积基板的装置。一个实施例中，用于在等离子体反应器中使用的衬底支撑件包括导电体，其具有具有多个辊形凹口的顶表面。

9. 发明授权

US08999847B2 a-Si seasoning effect to improve SiN run-to-run uniformity 有权
标题翻译： a-Si调味效果提高了SiN运行均匀性
公开(公告)号：US08999847B2
公开(公告)日：2015-04-07
申请号：US13207315
申请日：2011-08-10
申请人： Gaku Furuta , Soo Young Choi , Beom Soo Park , Young-jin Choi , Omori Kenji
发明人： Gaku Furuta , Soo Young Choi , Beom Soo Park , Young-jin Choi , Omori Kenji
IPC分类号： H01L21/311 , H01L21/02 , C23C16/34 , C23C16/44
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/4404 , H01L21/02274 , H01L21/02299
摘要： Embodiments of the present invention provide methods for depositing a nitrogen-containing material on large-sized substrates disposed in a processing chamber. In one embodiment, a method includes processing a batch of substrates within a processing chamber to deposit a nitrogen-containing material on a substrate from the batch of substrates, and performing a seasoning process at predetermined intervals during processing the batch of substrates to deposit a conductive seasoning layer over a surface of a chamber component disposed in the processing chamber. The chamber component may include a gas distribution plate fabricated from a bare aluminum without anodizing. In one example, the conductive seasoning layer may include amorphous silicon, doped amorphous silicon, doped silicon, doped polysilicon, doped silicon carbide, or the like.
摘要翻译：本发明的实施方案提供了在设置在处理室中的大尺寸基板上沉积含氮材料的方法。在一个实施方案中，一种方法包括处理处理室内的一批衬底，以将一批含有底物的含氮材料从该批衬底上沉积，并在处理该批衬底期间以预定间隔进行调味过程以沉积导电在处理室中设置的腔室部件的表面上的调味层。腔室部件可以包括由裸铝制成而不阳极氧化的气体分配板。在一个示例中，导电调味层可以包括非晶硅，掺杂非晶硅，掺杂硅，掺杂多晶硅，掺杂碳化硅等。

10. 发明申请

US20100288197A1 ANODIZED SHOWERHEAD 有权
标题翻译：阳光淋浴
公开(公告)号：US20100288197A1
公开(公告)日：2010-11-18
申请号：US12779167
申请日：2010-05-13
申请人： Soo Young Choi , Suhail Anwar , Gaku Furuta , Beom Soo Park , Robin L. Tiner , John M. White , Shinichi Kurita
发明人： Soo Young Choi , Suhail Anwar , Gaku Furuta , Beom Soo Park , Robin L. Tiner , John M. White , Shinichi Kurita
IPC分类号： C23C16/455 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/4404 , C23C16/5096 , H01J37/32091 , H01J37/32449 , H01J37/32541 , H01J37/32559 , H01J37/32577
摘要： Embodiments disclosed herein generally relate to an apparatus having an anodized gas distribution showerhead. In large area, parallel plate RF processing chambers, mastering the RF return path can be challenging. Arcing is a frequent problem encountered in RF processing chambers. To reduce arcing in RF processing chambers, straps may be coupled to the susceptor to shorten the RF return path, a ceramic or insulating or anodized shadow frame may be coupled to the susceptor during processing, and an anodized coating may be deposited onto the edge of the showerhead that is nearest the chamber walls. The anodized coating may reduce arcing between the showerhead and the chamber walls and therefore enhance film properties and increase deposition rate.
摘要翻译：本文公开的实施方案通常涉及具有阳极氧化气体分配喷头的装置。在大面积的平行板RF处理室中，掌握RF返回路径可能具有挑战性。射频是RF处理室遇到的一个常见问题。为了减少RF处理室中的电弧，带可以耦合到基座以缩短RF返回路径，陶瓷或绝缘或阳极氧化的阴影框架可以在处理期间耦合到基座，并且阳极化涂层可以沉积在最靠近室壁的淋浴头。阳极化涂层可以减少喷头和室壁之间的电弧，并因此增强膜的性质并增加沉积速率。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式