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1. 发明授权

US5834840A Net-shape ceramic processing for electronic devices and packages 失效
标题翻译：电子器件和封装的网状陶瓷加工
公开(公告)号：US5834840A
公开(公告)日：1998-11-10
申请号：US448725
申请日：1995-05-25
申请人： William L. Robbins , John S. Haggerty , Dennis D. Rathman , William D. Goodhue , George B. Kenney , Annamarie Lightfoot , R. Allen Murphy , Wendell E. Rhine , Julia Sigalovsky
发明人： William L. Robbins , John S. Haggerty , Dennis D. Rathman , William D. Goodhue , George B. Kenney , Annamarie Lightfoot , R. Allen Murphy , Wendell E. Rhine , Julia Sigalovsky
IPC分类号： H01L21/48 , H01L23/057 , H01L23/15 , H01L23/66 , H01L23/06 , H01L23/10
CPC分类号： H01L23/66 , H01L21/4807 , H01L21/4857 , H01L23/057 , H01L23/15 , H01L2224/32188 , H01L2224/45124 , H01L2224/45144 , H01L2224/48227 , H01L2224/48472 , H01L24/45 , H01L24/48 , H01L2924/01004 , H01L2924/01012 , H01L2924/01029 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/04941 , H01L2924/09701 , H01L2924/12032 , H01L2924/12042 , H01L2924/1301 , H01L2924/1305 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/15787 , H01L2924/16195 , H01L2924/19041 , H01L2924/30107 , H01L2924/3025
摘要： An electronic device package is provided, consisting of reaction bonded silicon nitride structural and dielectric components and conductor, resistor, and capacitor elements positioned with the package structural components. The package consists of a ceramic package base characterized by a dielectric constant less than 6, of reaction bonded silicon nitride, or a heat spreader material. An electrical conductor is positioned on, embedded in, or attached to the package base for making electrical contact to an electronic device supported on the base and in preferred embodiments, a resistor is attached to the package base. The invention also provides package sidewalls connected to the package base, preferably of reaction bonded silicon nitride, and at least one electrical conductor extending to an outside surface of the package sidewalls for making electrical contact to an electronic device supported by the package base. The reaction formed electronic device packages of the invention provide the ability to support high device signal frequencies, high device operational temperatures, and high environmental temperatures, due to the characteristics of the package materials. The reaction formed electronic device packages of the invention may be produced with a nitriding process during which the overall package structure exhibits minimal shrinkage. As a result, the reaction formed electronic device packages of the invention may be shaped to finished dimensions before the nitriding process with complicated and tight-tolerance geometries of package structural, conducting, resistive, and capacitive components.
摘要翻译：提供了一种电子器件封装，包括反应结合的氮化硅结构和电介质元件以及与封装结构元件定位的导体，电阻器和电容元件。封装由陶瓷封装基底组成，其特征在于介电常数小于6的反应结合氮化硅或散热器材料。电导体定位在，嵌入或附接到封装基座，用于与支撑在基座上的电子设备进行电接触，并且在优选实施例中，电阻器附接到封装基座。本发明还提供了连接到封装基部，优选反应结合的氮化硅的封装侧壁，以及延伸到封装侧壁的外表面的至少一个电导体，用于与由封装基座支撑的电子器件进行电接触。由于封装材料的特性，本发明的反应形成的电子器件封装提供了支持高器件信号频率，高器件工作温度和高环境温度的能力。本发明的反应形成的电子器件封装可以通过氮化工艺制造，在整个封装结构期间，整个封装结构显示最小的收缩。结果，本发明的反应形成的电子器件封装可以在氮化工艺之前成形为具有封装结构，导电，电阻和电容元件的复杂和紧密公差几何形状的成品尺寸。

2. 发明授权

US5801073A Net-shape ceramic processing for electronic devices and packages 失效
标题翻译：电子器件和封装的网状陶瓷加工
公开(公告)号：US5801073A
公开(公告)日：1998-09-01
申请号：US450692
申请日：1995-05-25
申请人： William L. Robbins , John S. Haggerty , Dennis D. Rathman , William D. Goodhue , George B. Kenney , Annamarie Lightfoot , R. Allen Murphy , Wendell E. Rhine , Julia Sigalovsky
发明人： William L. Robbins , John S. Haggerty , Dennis D. Rathman , William D. Goodhue , George B. Kenney , Annamarie Lightfoot , R. Allen Murphy , Wendell E. Rhine , Julia Sigalovsky
IPC分类号： H01L21/50 , H01L23/057 , H01L23/13 , H01L21/60
CPC分类号： H01L21/50 , H01L23/057 , H01L23/13 , H01L2224/05624 , H01L2224/32188 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/48624 , H01L2224/48724 , H01L24/45 , H01L24/48 , H01L2924/01004 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/04941 , H01L2924/09701 , H01L2924/12032 , H01L2924/12042 , H01L2924/1305 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/16195 , H01L2924/19041 , H01L2924/30107 , H01L2924/3025
摘要： A method of producing electronic device packages is provided, consisting of the steps of shaping a package preform and heating the package preform in a nitrogen-containing atmoshpere to nitride the package preform. The shaped package preform may consist of package base, sidewall, conductor, resistor, or capacitor components. The package base and sidewall components may be formed of silicon powder. The method also accommodates the step of inserting a semiconducting material into the package preform and heating the semiconducting material component along with the package preform. The inserted semiconducting material component may be processed to define active electronic device areas on the component either before or after the step of heating the shaped package preform and inserted semiconducting material component. The package production methods of the invention provide the ability to produce reaction bonded structural and dielectric package components by way of a nitriding process that causes minimal overall shrinkage of the package. As a result, reaction formed electronic device packages of the invention may be shaped to finished dimensions before the nitriding process with complicated and tight-tolerance geometries of package structural, conducting, resistive, and capacitive components. The package production methods of the invention also provide the ability to interleave electronic device and packaging manufacturing sequence steps, resulting in increased manufacturing efficiency, as well as improved performance in the devices and packages produced. Device substrates or partially fabricated devices may be embedded into semi-finished packages, whereby completion of device fabrication coincides with completion of package fabrication. This makes possible the fabrication of active devices and circuits in a fully packaged environment.
摘要翻译：提供了一种制造电子器件封装的方法，其包括以下步骤：将包装预制件成形并在含氮大气中加热包装预制件以氮化包装预制件。成形包装预制件可以由封装基座，侧壁，导体，电阻器或电容器部件组成。封装基部和侧壁部件可以由硅粉末形成。该方法还适应于将半导体材料插入封装预制件中并与封装预制件一起加热半导体材料部件的步骤。可以在加热成形包装预制件和插入的半导体材料部件的步骤之前或之后，处理插入的半导体材料部件以在部件上限定有源电子器件区域。本发明的包装生产方法提供了通过氮化过程产生反应结合的结构和介电包装组分的能力，其导致包装的最小总收缩。结果，本发明的反应形成的电子器件封装可以在氮化处理之前被成形为成品尺寸，其具有封装结构，导电，电阻和电容元件的复杂且严格的公差几何形状。本发明的封装制造方法还提供了交错电子器件和封装制造顺序步骤的能力，从而提高制造效率，以及在所生产的器件和封装中提高性能。器件衬底或部分制造的器件可以嵌入半成品封装中，由此器件制造的完成与封装制造的完成一致。这使得可以在完全封装的环境中制造有源器件和电路。

3. 发明授权

US07619214B2 Spectrometer chip assembly 有权
标题翻译：光谱仪芯片组装
公开(公告)号：US07619214B2
公开(公告)日：2009-11-17
申请号：US11482665
申请日：2006-07-06
申请人： Raanan A. Miller , William L. Robbins
发明人： Raanan A. Miller , William L. Robbins
IPC分类号： B01D59/44 , H01J49/00
CPC分类号： G01N27/624 , H01J49/0018
摘要： Method and apparatus for high field asymmetric waveform ion mobility spectrometry in an electronic chip assembly, including an input section, an ion filter and detection section and a control section, in which ion filtering proceeds in a planar chamber under influence of high field asymmetric periodic signals, with detection integrated into the flow path, for producing accurate, real-time, data for identification of a broad range of chemical compounds.
摘要翻译：电子芯片组件中的高场非对称波形离子淌度光谱法的方法和装置，包括输入部分，离子过滤器和检测部分和控制部分，其中离子过滤在高场不对称周期信号的影响下在平面室中进行具有集成到流路中的检测，用于产生准确的实时数据，用于识别广泛的化合物。

4. 发明授权

US5682167A Mesa antenna 失效
标题翻译：梅萨天线
公开(公告)号：US5682167A
公开(公告)日：1997-10-28
申请号：US783071
申请日：1997-01-15
申请人： Frank E. Mullen , William L. Robbins
发明人： Frank E. Mullen , William L. Robbins
IPC分类号： H01Q9/04 , H01Q11/38
CPC分类号： H01Q9/0407
摘要： The present invention provides an antenna including a relatively thin substantially planar electrically conductive first layer substantially lying in a first plane, and a relatively thin substantially planar electrically conductive second layer substantially lying in a second plane. The first and second layers are disposed such that the first and second planes are substantially parallel and such that they are separated by a distance d. The second layer is smaller than and overlies the first layer and defines a first region extending between the second layer and a portion of the first layer underlying the second layer. The antenna further includes a first dielectric medium having a relatively high dielectric constant and disposed in the first region, and a second dielectric medium having a relatively low dielectric constant and disposed in a second region extending between the first layer and portions of the second plane overlying the first layer and excluding the first region.
摘要翻译：本发明提供了一种天线，其包括基本上位于第一平面中的相对薄的基本平坦的导电第一层，以及基本上位于第二平面中的相对薄的基本平坦的导电的第二层。第一和第二层被布置成使得第一和第二平面基本上平行并且使得它们分开距离d。第二层小于第一层并覆盖在第一层上并且限定在第二层和第二层下面的第一层的一部分之间延伸的第一区域。天线还包括具有相对较高的介电常数并设置在第一区域中的第一电介质介质和具有相对较低介电常数的第二介电介质，并且设置在第二区域之间，该第二区域在第一层与第二平面的部分之间延伸，第一层，排除第一区域。

5. 发明授权

US4788523A Viad chip resistor 失效
标题翻译： Viad芯片电阻
公开(公告)号：US4788523A
公开(公告)日：1988-11-29
申请号：US130839
申请日：1987-12-10
申请人： William L. Robbins
发明人： William L. Robbins
IPC分类号： H01C17/00 , H01C1/012
CPC分类号： H01C17/006 , Y10T29/49099 , Y10T29/49101 , Y10T29/49789
摘要： A viad chip resistor made from an insulative wafer and having a via formed near end of the wafer. Conductive pads surround the vias on both sides of the wafer. A resistive element is formed on one side of the wafer between the vias and is electrically connected to the conductive pads on that side. An array of viad chip resistors, from which said individual viad chip resistors are cut, is also shown.
摘要翻译：由绝缘晶片制成并具有在晶片近端形成的通孔的高电压片式电阻器。导电垫围绕晶片两侧的通孔。电阻元件形成在通孔之间的晶片的一侧上，并且电连接到该侧上的导电焊盘。还示出了切割所述单独的Viad片式电阻器的一组Viad片式电阻器。

6. 发明申请

US20110247942A1 ALKALI-METAL GENERATOR AND ABSORBER 有权
标题翻译：碱性金属发生器和吸收器
公开(公告)号：US20110247942A1
公开(公告)日：2011-10-13
申请号：US12758700
申请日：2010-04-12
申请人： Jonathan J. Bernstein , Mark J. Mescher , William L. Robbins
发明人： Jonathan J. Bernstein , Mark J. Mescher , William L. Robbins
IPC分类号： C25C1/02 , C25C7/02
CPC分类号： C25C1/02 , C22B26/10
摘要： Electrodes are positioned substantially in contact with at least one surface of a solid to generate or absorb alkali metals when a voltage is applied between the electrodes.
摘要翻译：当在电极之间施加电压时，电极基本上与固体的至少一个表面接触以产生或吸收碱金属。

7. 发明授权

US06204090B1 Method for attaching a die to a carrier utilizing an electrically nonconductive layer 失效
标题翻译：使用非导电层将管芯附接到载体的方法
公开(公告)号：US06204090B1
公开(公告)日：2001-03-20
申请号：US09451154
申请日：1999-11-30
申请人： John J. Boyle , William L. Robbins
发明人： John J. Boyle , William L. Robbins
IPC分类号： H01L2144
CPC分类号： H01L31/0203 , H01L21/563 , H01L24/81 , H01L2224/05571 , H01L2224/05573 , H01L2224/05644 , H01L2224/05666 , H01L2224/05669 , H01L2224/16145 , H01L2224/45144 , H01L2224/48091 , H01L2224/73203 , H01L2224/81801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01327 , H01L2924/04941 , H01L2924/09701 , H01L2924/10253 , H01L2924/14 , H01L2924/15312 , H01L2924/15787 , H01L2924/19107 , H01L2924/00014 , H01L2924/00
摘要： An integrated circuit (IC) die carrier assembly includes a thinned IC die mounted to a substrate or carrier. The IC die is mounted to the carrier via a thin layer of glass. The carrier facilitates fixturing and provides support during the lapping process used to thin the die. Ball bonding, wire bonding, thin film or thick film conductors can be used to interconnect the pads on the IC die to the pads on the carrier. The coefficients of the thermal expansion of the IC die and the carrier are closely matched to avoid damage to the IC die due to uneven expansion of the thinned IC die relative to the carrier. The IC die carrier assembly is better suited for ultrahigh vacuum and high temperature environments than conventional IC die carrier assemblies.
摘要翻译：集成电路（IC）模具载体组件包括安装到基板或载体的薄化IC芯片。 IC芯片通过薄层玻璃安装到载体上。载体便于固定，并在用于模具的薄片研磨过程中提供支撑。可以使用球焊，引线接合，薄膜或厚膜导体将IC管芯上的焊盘与载体上的焊盘相互连接。 IC芯片和载体的热膨胀系数紧密匹配，以避免由于薄型IC芯片相对于载体的不均匀膨胀而损坏IC芯片。 IC模具载体组件比常规IC模具载体组件更适合于超高真空和高温环境。

8. 发明授权

US5450090A Multilayer miniaturized microstrip antenna 失效
标题翻译：多层微型微带天线
公开(公告)号：US5450090A
公开(公告)日：1995-09-12
申请号：US278049
申请日：1994-07-20
申请人： Robert G. Gels , William L. Robbins
发明人： Robert G. Gels , William L. Robbins
IPC分类号： H01Q9/04 , H01Q1/38
CPC分类号： H01Q9/0414 , H01Q9/0435
摘要： The present invention provides a miniaturized multilayer microstrip antenna that includes a stack of antenna sub-stacks, a ground element, and a plurality of electrically conductive segments. Each of the antenna sub-stacks includes a pair of substantially parallel outer principal faces. A sandwich of two relatively thin electrically non-conductive substrate elements, separated by a relatively thin electrically conductive layer, extends between each pair of parallel outer principal faces. The electrically conductive layer has at least one void region through which an electrically conductive feedthrough element extends. The feedthrough element also extends between the outer principal faces. The ground element electrically couples the conductive layers of each of the antenna sub-stacks. The electrically conductive segments are positioned between adjacent principal faces of two adjacent antenna sub-stacks in the stack, and electrically connect the feedthrough elements of the adjacent antenna sub-stacks, thereby establishing a first continuous elongated antenna element.
摘要翻译：本发明提供了一种小型化多层微带天线，其包括天线子堆栈，接地元件和多个导电段的堆叠。每个天线子堆叠包括一对基本上平行的外主面。由相对薄的导电层隔开的两个相对较薄的非导电衬底元件的夹层在每对平行的外主面之间延伸。导电层具有至少一个空隙区域，导电馈通元件穿过该空间区域延伸。馈通元件还在外主体面之间延伸。接地元件电耦合每个天线子堆叠的导电层。导电段位于堆叠中两个相邻天线子堆叠的相邻主面之间，并且电连接相邻天线子堆叠的馈通元件，从而建立第一连续细长天线元件。

9. 发明授权

US08999123B2 Alkali-metal generator and absorber 有权
标题翻译：碱金属发电机和吸收器
公开(公告)号：US08999123B2
公开(公告)日：2015-04-07
申请号：US12758700
申请日：2010-04-12
申请人： Jonathan J. Bernstein , Mark J. Mescher , William L. Robbins
发明人： Jonathan J. Bernstein , Mark J. Mescher , William L. Robbins
IPC分类号： C25C3/02 , C25C1/02 , C22B26/10
CPC分类号： C25C1/02 , C22B26/10
摘要： Electrodes are positioned substantially in contact with at least one surface of a solid to generate or absorb alkali metals when a voltage is applied between the electrodes.
摘要翻译：当在电极之间施加电压时，电极基本上与固体的至少一个表面接触以产生或吸收碱金属。

10. 发明授权

US07098449B1 Spectrometer chip assembly 有权
标题翻译：光谱仪芯片组装
公开(公告)号：US07098449B1
公开(公告)日：2006-08-29
申请号：US10836432
申请日：2004-04-30
申请人： Raanan A. Miller , William L. Robbins
发明人： Raanan A. Miller , William L. Robbins
IPC分类号： H01J49/40
CPC分类号： G01N27/624 , H01J49/0018
摘要： Method and apparatus for high field asymmetric waveform ion mobility spectrometry in an electronic chip assembly,, including an input section, an ion filter and detection section and a control section, in which ion filtering proceeds in a planar chamber under influence of high field asymmetric periodic signals, with detection integrated into the flow path, for producing accurate, real-time, data for identification of a broad range of chemical compounds.
摘要翻译：包括输入部分，离子过滤器和检测部分以及控制部分中的高场不对称波形离子淌度光谱法的方法和装置，其中离子过滤在高场不对称周期的影响下在平面室中进行信号，具有集成到流路中的检测，用于产生准确的实时数据，用于识别宽范围的化合物。

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