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1. 发明申请

US20080098170A1 System and method for incremental RPO-type algorithm in disk drive 审中-公开
标题翻译：磁盘驱动器增量RPO型算法的系统和方法
公开(公告)号：US20080098170A1
公开(公告)日：2008-04-24
申请号：US11584824
申请日：2006-10-23
申请人： William L. Guthrie , Joe-Ming Cheng , Nyles Norbert Heise
发明人： William L. Guthrie , Joe-Ming Cheng , Nyles Norbert Heise
IPC分类号： G06F13/00
CPC分类号： G06F12/0866 , G06F2212/601
摘要： A desired cache size in a disk drive is established, and no reordering algorithm is performed on commands in the cache until the desired size is reached. An optimal subset size is also established. Then, an optimization algorithm is performed on all commands in the cache, with only the commands in the optimal subset being output for execution. The cache is refilled to the desired size, and the process is repeated.
摘要翻译：建立磁盘驱动器中期望的高速缓存大小，并且不对缓存中的命令执行重新排序算法，直到达到期望的大小。还建立了最佳子集大小。然后，对缓存中的所有命令执行优化算法，只有最优子集中的命令被输出才能执行。将高速缓存重新填充到所需的大小，并重复该过程。

2. 发明授权

US07011565B2 Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus 失效
公开(公告)号：US07011565B2
公开(公告)日：2006-03-14
申请号：US10405421
申请日：2003-04-01
申请人： Manoocher Birang , Allan Gleason , William L. Guthrie
发明人： Manoocher Birang , Allan Gleason , William L. Guthrie
IPC分类号： B24B49/00
CPC分类号： B24B37/205 , B24B37/013 , B24B47/12 , B24B49/04 , B24B49/12 , B24B51/00 , B24D18/00 , G01B11/06 , G01B11/0683
摘要： The polishing pad for a chemical mechanical polishing apparatus, and a method of making the same. The polishing pad has a covering layer with a polishing surface and a backing layer which is adjacent to the platen. A first opening in the covering layer with a first cross-sectional area and a second opening in the backing layer with a second, different cross-sectional area form an aperture through the polishing pad. A substantially transparent polyurethane plug is positioned in the aperture, and an adhesive material fixes the plug in the aperture.

3. 发明授权

US07255629B2 Polishing assembly with a window 有权
标题翻译：抛光组件与窗口
公开(公告)号：US07255629B2
公开(公告)日：2007-08-14
申请号：US11532498
申请日：2006-09-15
申请人： Manoocher Birang , Allan Gleason , William L. Guthrie
发明人： Manoocher Birang , Allan Gleason , William L. Guthrie
IPC分类号： B24B49/00
CPC分类号： B24B37/205 , B24B37/013 , B24B47/12 , B24B49/04 , B24B49/12 , B24B51/00 , B24D18/00 , G01B11/06 , G01B11/0683
摘要： The polishing pad for a chemical mechanical polishing apparatus, and a method of making the same. The polishing pad has a covering layer with a polishing surface and a backing layer which is adjacent to the platen. A first opening in the covering layer with a first cross-sectional area and a second opening in the backing layer with a second, different cross-sectional area form an aperture through the polishing pad. A substantially transparent polyurethane plug is positioned in the aperture, and an adhesive material fixes the plug in the aperture.
摘要翻译：用于化学机械抛光装置的抛光垫及其制造方法。抛光垫具有与抛光表面相邻的覆盖层和与压板相邻的背衬层。具有第一横截面积的覆盖层中的第一开口和具有第二不同横截面积的背衬层中的第二开口形成穿过抛光垫的孔。基本上透明的聚氨酯塞被定位在孔中，并且粘合剂材料将塞子固定在孔中。

4. 发明授权

US5795215A Method and apparatus for using a retaining ring to control the edge effect 失效
标题翻译：使用固定环来控制边缘效应的方法和装置
公开(公告)号：US5795215A
公开(公告)日：1998-08-18
申请号：US667221
申请日：1996-06-19
申请人： William L. Guthrie , Tsungnan Cheng , Sen-Hou Ko , Harry Q. Lee , Michael T. Sherwood , Norm Shendon
发明人： William L. Guthrie , Tsungnan Cheng , Sen-Hou Ko , Harry Q. Lee , Michael T. Sherwood , Norm Shendon
IPC分类号： B24B5/00
CPC分类号： B24B5/00
摘要： A process using a retaining ring assembly of a carrier head to precompress a polishing pad to reduce or minimize the edge effect in a chemical mechanical polishing process.
摘要翻译：使用载体头的保持环组件来预压缩抛光垫以减少或最小化化学机械抛光工艺中的边缘效应的方法。

5. 发明授权

US4702792A Method of forming fine conductive lines, patterns and connectors 失效
标题翻译：形成细导电线，图案和连接器的方法
公开(公告)号：US4702792A
公开(公告)日：1987-10-27
申请号：US791862
申请日：1985-10-28
申请人： Ming-Fea Chow , William L. Guthrie , Frank B. Kaufman
发明人： Ming-Fea Chow , William L. Guthrie , Frank B. Kaufman
IPC分类号： H01L21/3205 , H01L21/304 , H01L21/306 , H01L21/60 , H01L21/768 , H05K3/46 , C23F1/00 , H05K3/26
CPC分类号： H01L21/3212 , H01L21/7684 , H01L21/76885 , H05K3/4644
摘要： The present invention discloses a method of forming fine conductive lines, patterns, and connectors, and is particularly useful in the formation of electronic devices. The method comprises a series of steps in which: a polymeric material is applied to a substrate; the polymeric material is patterned to form openings through, spaces within, or combinations thereof in the polymeric material; subsequently, conductive material is applied to the patterned polymeric material, so that it at least fills the openings and spaces existing in the polymeric material; and excess conductive material is removed from the exterior major surface of the polymeric material using chemical-mechanical polishing, to expose at least the exterior major surface of the polymeric material. The structure remaining has a planar exterior surface, wherein the conductive material filling the openings and spaces in the patterned polymeric material becomes features such as fine lines, patterns, and connectors which are surrounded by the polymeric material. The polymeric material may be left in place as an insulator or removed, leaving the conductive features on the substrate.
摘要翻译：本发明公开了一种形成细导电线，图案和连接器的方法，并且在电子器件的形成中特别有用。该方法包括一系列步骤，其中：将聚合物材料施加到基底上; 将聚合物材料图案化以在聚合物材料中形成开口，其内部或其组合; 随后，将导电材料施加到图案化聚合物材料上，使得其至少填充聚合物材料中存在的开口和空间; 并且使用化学机械抛光从多孔材料的外主表面除去过量的导电材料，以至少露出聚合材料的外表面。剩余的结构具有平坦的外表面，其中填充图案化聚合物材料中的开口和空间的导电材料变成由聚合材料包围的特征，例如细线，图案和连接器。聚合物材料可以作为绝缘体留在原位或移除，留下基底上的导电特征。

6. 发明授权

US06051499A Apparatus and method for distribution of slurry in a chemical mechanical polishing system 失效
标题翻译：用于在化学机械抛光系统中分配浆料的装置和方法
公开(公告)号：US06051499A
公开(公告)日：2000-04-18
申请号：US982823
申请日：1997-12-02
申请人： Robert D. Tolles , William L. Guthrie , Jeffrey Marks , Tsungnan Cheng , Semyon Spektor , Ivan A. Ocanada , Norm Shendon
发明人： Robert D. Tolles , William L. Guthrie , Jeffrey Marks , Tsungnan Cheng , Semyon Spektor , Ivan A. Ocanada , Norm Shendon
IPC分类号： H01L21/304 , B24B37/04 , B24B57/02 , B24B1/00
CPC分类号： B24B37/04 , B24B57/02
摘要： Slurry is provided to the surface of the polishing pad by pumping the slurry up through a central port, or by dripping the slurry down onto the surface of the polishing pad from a slurry feed tube. A slurry wiper, which may have one or more flexible members, sweeps the slurry evenly and thinly across the polishing pad. A control system coordinates the distribution of slurry to the polishing pad with the motion of the carrier head.
摘要翻译：通过将浆料向上泵送通过中心口，或通过从浆料进料管将浆料向下滴落到抛光垫的表面上而将浆料提供到抛光垫的表面。可以具有一个或多个柔性构件的浆料刮水器将抛光浆料均匀且薄薄地扫过抛光垫。控制系统通过载体头的运动来协调浆料与抛光垫的分布。

7. 发明授权

US5633195A Laser planarization of zone 1 deposited metal films for submicron metal interconnects 失效
标题翻译： 1区沉积金属薄膜用于亚微米金属互连的激光平面化
公开(公告)号：US5633195A
公开(公告)日：1997-05-27
申请号：US532376
申请日：1995-09-22
申请人： William L. Guthrie , Naftali E. Lustig
发明人： William L. Guthrie , Naftali E. Lustig
IPC分类号： B23K26/00 , B23K26/16 , C23C14/14 , C23C14/34 , C23C14/58 , C23C26/00 , H01L21/268 , H01L21/306 , H01L21/3205 , H01L21/321 , H01L21/26
CPC分类号： C23C14/5813 , C23C14/14 , C23C14/34 , H01L21/32115
摘要： A method of laser planarizing metallic thin films minimizes the laser fluences required to melt or nearly melt the metalization. This is accomplished by reducing the optical reflectivity of the metallic lines and vias by using textured thin films. This reduction of optical reflectivity, in turn, reduces the minimum fluence needed to melt or nearly melt the metal using a laser, thus improving the process window and minimizing the damage to the surrounding media.
摘要翻译：激光平面化金属薄膜的方法使得融化或几乎熔化金属化所需的激光能量密度最小化。这是通过使用纹理化薄膜来减少金属线和通孔的光学反射率来实现的。光学反射率的这种降低又降低了使用激光熔化或几乎熔化金属所需的最小注量，从而改善了工艺窗口并使对周围介质的损害最小化。

8. 发明授权

US4954142A Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor 失效
标题翻译：电子部件基板的化学机械研磨方法及研磨用浆料的方法
公开(公告)号：US4954142A
公开(公告)日：1990-09-04
申请号：US285435
申请日：1989-03-07
申请人： Jeffrey W. Carr , Lawrence D. David , William L. Guthrie , Frank B. Kaufman , William J. Patrick , Kenneth P. Rodbell , Robert W. Pasco , Anton Nenadic
发明人： Jeffrey W. Carr , Lawrence D. David , William L. Guthrie , Frank B. Kaufman , William J. Patrick , Kenneth P. Rodbell , Robert W. Pasco , Anton Nenadic
IPC分类号： B24B37/00 , C09G1/02 , H01L21/304 , H01L21/306 , H01L21/48
CPC分类号： H01L21/4871 , C09G1/02 , H01L21/4864
摘要： Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps;obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; andcontacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt.The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.
摘要翻译：公开了电子部件基板的化学研磨方法。该方法包括以下步骤：获得其上具有至少两个特征的衬底，其中相对于特定蚀刻剂具有不同的蚀刻速率; 以及使所述基板与抛光垫接触，同时使所述基板与含有所述蚀刻剂的浆料接触，其中所述浆料包括磨料颗粒，过渡金属螯合盐和所述盐的溶剂。化学铣削使得至少两个特征基本上共面。还公开了化学研磨浆料。

9. 发明授权

US4789648A Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias 失效
标题翻译：在基板上制造共面多层金属/绝缘体膜并与螺柱通孔同时形成图案化导电线的方法
公开(公告)号：US4789648A
公开(公告)日：1988-12-06
申请号：US791887
申请日：1985-10-28
申请人： Melanie M. Chow , John E. Cronin , William L. Guthrie , Carter W. Kaanta , Barbara Luther , William J. Patrick , Kathleen A. Perry , Charles L. Standley
发明人： Melanie M. Chow , John E. Cronin , William L. Guthrie , Carter W. Kaanta , Barbara Luther , William J. Patrick , Kathleen A. Perry , Charles L. Standley
IPC分类号： H01L21/3205 , H01L21/302 , H01L21/304 , H01L21/3065 , H01L21/3213 , H01L21/768 , H05K3/04 , H05K3/10 , H05K3/46 , H01L21/306
CPC分类号： H01L21/7681 , H01L21/304 , H01L21/32134 , H01L21/7684 , H01L21/76877 , H05K3/04 , H05K3/107 , H05K3/4644
摘要： Patterned conductive lines are formed simultaneously with stud via connections through an insulation layer to previously formed underlying patterned conductive lines in multilevel VLSI chip technology. A first planarized layer of insulation is deposited over a first level of patterned conductive material to which contacts are to be selectively established. The first layer then is covered by an etch stop material. Contact holes are defined in the etch stop material at locations where stud connectors are required. The first layer of insulation is not etched at this time.Next, a second planarized layer of insulation, is deposited over the etch stop material. The second layer insulation, in turn, is etched by photolithography down to the etch stop material to define desired wiring channels, some of which will be in alignment with the previously formed contact holes in the etch stop material. In those locations where the contact holes are exposed, the etching is continued into the first layer of insulation to uncover the underlying first level of patterned conductive material.The channels and via holes are overfilled with metallization. The excess metallization is removed by etching or by chem-mech (chemical-mechanical) polishing.
摘要翻译：图案化的导线通过连接通过绝缘层与螺柱同时形成，以预先形成的多层VLSI芯片技术中的下面的图案化导电线。第一平坦化绝缘层沉积在要选择性地建立触点的图案化导电材料的第一层上。第一层然后被蚀刻停止材料覆盖。在需要螺柱连接器的位置处，在蚀刻停止材料中限定接触孔。此时第一层绝缘层不被蚀刻。接下来，将第二平坦化绝缘层沉积在蚀刻停止材料上。再次通过光刻将第二层绝缘层蚀刻到蚀刻停止材料上，以限定所需的布线通道，其中的一些布线通道将与蚀刻停止材料中先前形成的接触孔对准。在暴露接触孔的那些位置中，蚀刻继续进入第一绝缘层，以露出图案化的导电材料的下面的第一层。通道和通孔充满金属化。通过蚀刻或化学机械（chemical-mechanical）抛光去除多余的金属化。

10. 发明授权

US07118450B2 Polishing pad with window and method of fabricating a window in a polishing pad 有权
标题翻译：具有窗口的抛光垫和在抛光垫中制造窗口的方法
公开(公告)号：US07118450B2
公开(公告)日：2006-10-10
申请号：US11225838
申请日：2005-09-12
申请人： Manoocher Birang , Allan Gleason , William L. Guthrie
发明人： Manoocher Birang , Allan Gleason , William L. Guthrie
IPC分类号： B24B49/00 , B24B51/00
CPC分类号： B24B37/205 , B24B37/013 , B24B47/12 , B24B49/04 , B24B49/12 , B24B51/00 , B24D18/00 , G01B11/06 , G01B11/0683
摘要： The polishing pad for a chemical mechanical polishing apparatus, and a method of making the same. The polishing pad has a covering layer with a polishing surface and a backing layer which is adjacent to the platen. A first opening in the covering layer with a first cross-sectional area and a second opening in the backing layer with a second, different cross-sectional area form an aperture through the polishing pad. A substantially transparent polyurethane plug is positioned in the aperture, and an adhesive material fixes the plug in the aperture.
摘要翻译：用于化学机械抛光装置的抛光垫及其制造方法。抛光垫具有与抛光表面相邻的覆盖层和与压板相邻的背衬层。具有第一横截面积的覆盖层中的第一开口和具有第二不同横截面积的背衬层中的第二开口形成穿过抛光垫的孔。基本上透明的聚氨酯塞被定位在孔中，并且粘合剂材料将塞子固定在孔中。

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