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1. 发明授权

US5532089A Simplified fabrication methods for rim phase-shift masks 失效
标题翻译：轮缘相移掩模的简化制造方法
公开(公告)号：US5532089A
公开(公告)日：1996-07-02
申请号：US173383
申请日：1993-12-23
申请人： William J. Adair , Timothy A. Brunner , Derek B. Dove , Louis L. Hsu , Chi-Min Yuan
发明人： William J. Adair , Timothy A. Brunner , Derek B. Dove , Louis L. Hsu , Chi-Min Yuan
IPC分类号： G03F1/29 , H01L21/027 , G03F9/00
CPC分类号： G03F1/29 , Y10T428/24322
摘要： A simplified method of forming a phase shift structure for a lithographic mask includes the conformal deposition of a phase shift material, preferably having an index of refraction similar to that of the mask substrate, over a patterned layer of opaque material and exposed areas of the mask substrate corresponding to the pattern. The thickness of the opaque patterned layer, in combination with the conformal deposition preferably establishes a differentially altered optical path length to produce a phase shift which enhances contrast and increases illumination and resolution in fine patterns. In variant forms of the invention, the conformal deposition of either phase shift material or a sidewall spacer material is followed by an anisotropic removal of material to form the phase shift structure. The application of phase shift material over the mask surface increases durability of the mask and also enhances contrast of images produced with other phase-shift mask feature structures, such as Levenson-type shifters.
摘要翻译：形成用于光刻掩模的相移结构的简化方法包括在不透明材料的图案化层和掩模的暴露区域上的相移材料的共形沉积，优选地具有类似于掩模衬底的折射率的相移材料衬底对应于图案。不透明图案层的厚度与保形沉积结合优选地建立差异改变的光路长度以产生增强对比度并增加精细图案中的照明和分辨率的相移。在本发明的变体形式中，相移材料或侧壁间隔物材料的共形沉积之后是材料的各向异性去除以形成相移结构。在掩模表面上施加相移材料增加了掩模的耐久性，并且还增强了与其他相移掩模特征结构（例如莱文森型移位器）产生的图像的对比度。

2. 发明授权

US06207333B1 Mask with attenuating phase-shift and opaque regions 失效
标题翻译：具有衰减相移和不透明区域的掩模
公开(公告)号：US06207333B1
公开(公告)日：2001-03-27
申请号：US09363862
申请日：1999-07-29
申请人： William J. Adair , James J. Colelli , Erik A. Puttlitz , Timothy J. Toth , Arthur C. Winslow
发明人： William J. Adair , James J. Colelli , Erik A. Puttlitz , Timothy J. Toth , Arthur C. Winslow
IPC分类号： G03F900
CPC分类号： G03F1/32
摘要： A method of fabricating an attenuating phase shift photolithographic mask which will reduce the formation of side-lobes adjacent to large structures in the kerf regions on the patterned wafer. These structures are typically much larger in size than device nominal, and this method may be applied to either one axis or both axes of the kerf structure depending on it's susceptibility to form side-lobes. A substantially defect free optical lithography mask having partially transmissive attenuating phase-shift regions, transmissive clear regions, and more opaque than partially transmissive regions is fabricated by first depositing an attenuating phase-shifting layer on the top surface of a transmissive substrate followed by deposition of a more opaque than partially transmissive layer on top of the partially transmissive attenuating phase-shifting layer. Next an image transfer layer is deposited on top of the more opaque than partially transmissive layer. A first photolithographic step is performed in order to pattern the image transfer layer. The image transfer layer may then be inspected and repaired. The pattern in the image transfer layer is then transferred to both the more opaque than partially transmissive layer and partially transmissive attenuating phase-shift layer. Next a second photolithographic step is performed in order to remove the more opaque than partially transmissive layer from over the partially transmissive attenuating phase-shift layer in certain regions of the mask. The fabrication process may include the further steps of depositing a second image transfer layer before performing the second photolithographic step, and performing a second inspection and repair after the second photolithographic step. The image transfer layer(s) are then removed.
摘要翻译：一种制造衰减相移光刻掩模的方法，其将减少在图案化晶片上的切口区域中与大结构相邻的旁瓣的形成。这些结构的尺寸通常比设备标称的大得多，并且该方法可以应用于切口结构的一个轴或两个轴，这取决于其形成旁瓣的敏感性。基本上无缺陷的光刻掩模具有部分透射衰减通过首先在透射基板的顶表面上沉积衰减的移相层，然后在部分透射区的顶部沉积更不透明的部分透射层来制造相移区域，透射透明区域和比部分透射区域更不透明的区域部分透射衰减相移层。接下来，图像转印层沉积在比不透明层更不透明的层之上。执行第一光刻步骤以对图像转印层进行图案化。然后可以检查和修理图像转印层。然后将图像转印层中的图案转移到比不透射的层和部分透射的衰减相移层更不透明。接下来，执行第二光刻步骤，以便在掩模的某些区域中从部分透射的衰减相移层上去除比部分透射层更不透明的层。制造工艺可以包括在执行第二光刻步骤之前沉积第二图像转印层的步骤，以及在第二光刻步骤之后进行第二次检查和修复。然后去除图像转印层。

3. 发明授权

US06184151B2 Method for forming cornered images on a substrate and photomask formed thereby 失效
标题翻译：在基板上形成圆角图像的方法和由此形成的光掩模
公开(公告)号：US06184151B2
公开(公告)日：2001-02-06
申请号：US09275541
申请日：1999-03-24
申请人： William J. Adair , Richard A. Ferguson , Mark C. Hakey , Steven J. Holmes , David V. Horak , Robert K. Leidy , William Hsioh-Lien Ma , Ronald M. Martino , Song Peng
发明人： William J. Adair , Richard A. Ferguson , Mark C. Hakey , Steven J. Holmes , David V. Horak , Robert K. Leidy , William Hsioh-Lien Ma , Ronald M. Martino , Song Peng
IPC分类号： H01L21461
CPC分类号： H01L27/10864 , H01L21/0332 , H01L21/0334 , Y10S438/942
摘要： A method for forming square shape images in a lithographic process is disclosed wherein a first plurality of lines running in a first direction is defined in a first, usually sacrificial, layer, and then a second resist is defined wherein the lines run in an intersecting pattern to those of the first layer, thereby creating cornered images wherever the first and second layer intersect and in the open areas between the lines. Methods are proposed for developing the square intersecting areas and the square angle areas defined by the openings. Additionally, a photomask is disclosed in which the length and width of the cornered images are independently patterned using the two-exposure process.
摘要翻译：公开了一种在光刻工艺中形成正方形形状图像的方法，其中沿第一方向延伸的第一多条线被限定在第一，通常是牺牲层中，然后定义第二抗蚀剂，其中线以相交图案到第一层的那些，从而在第一和第二层交叉的任何地方以及在线之间的开放区域中产生拐角图像。提出了用于显影方形交叉区域和由开口限定的方角区域的方法。此外，公开了一种光掩模，其中使用双曝光工艺独立地对角形图像的长度和宽度进行图案化。

4. 发明授权

US5807649A Lithographic patterning method and mask set therefor with light field trim mask 失效
标题翻译：平版印刷图案方法和用光场修剪掩模设置的掩模
公开(公告)号：US5807649A
公开(公告)日：1998-09-15
申请号：US740598
申请日：1996-10-31
申请人： Lars W. Liebmann , David S. O'Grady , Richard A. Ferguson , William J. Adair
发明人： Lars W. Liebmann , David S. O'Grady , Richard A. Ferguson , William J. Adair
IPC分类号： G03F1/00 , G03F1/26 , G03F7/20 , G03F9/00
CPC分类号： G03F7/70433 , G03F1/26 , G03F1/70 , G03F7/70283
摘要： A lithographic patterning method and mask set using a phase shift trim mask having mask dimensions increased in block size so as to remove previous exposure defects.
摘要翻译：使用具有以块大小增加的掩模尺寸的相移修剪掩模的光刻图案化方法和掩模组，以便去除先前的曝光缺陷。

5. 发明授权

US5506080A Lithographic mask repair and fabrication method 失效
标题翻译：平版印刷修复和制作方法
公开(公告)号：US5506080A
公开(公告)日：1996-04-09
申请号：US376570
申请日：1995-01-23
申请人： William J. Adair , David S. O'Grady , Willam C. Joyce , James J. Lynch , Jean T. Ohlson
发明人： William J. Adair , David S. O'Grady , Willam C. Joyce , James J. Lynch , Jean T. Ohlson
IPC分类号： G03F1/72 , G03F9/00
CPC分类号： G03F1/72
摘要： A method of forming a substantially defect-free mask for optical and phase-shift lithography. The method involves depositing a transfer layer on a mask layer deposited on a transmissive substrate, forming in the transfer layer a mask image to be defined in the mask layer, inspecting the image formed in the transfer layer, repairing the image formed in the transfer image, and transferring the corrected image from the transfer layer into the mask layer. The repair of the transfer layer is accomplished by removing unwanted portions of the transfer layer followed by filling any unwanted voids therein with a selected material. Preferably, the fill material has the same desirable etching and/or optical characteristics as the surrounding transfer layer. However, any material that is substantially opaque to the radiation used to transfer the image from the transfer layer to the mask layer can be successfully employed.
摘要翻译：形成用于光学和相移光刻的基本无缺陷掩模的方法。该方法包括在沉积在透射基板上的掩模层上沉积转移层，在转印层中形成要在掩模层中限定的掩模图像，检查在转印层中形成的图像，修复转印图像中形成的图像并将修正后的图像从转印层转印到掩模层中。转移层的修复通过去除转移层的不需要的部分，然后用所选择的材料填充其中的任何不需要的空隙来实现。优选地，填充材料具有与周围转移层相同的期望的蚀刻和/或光学特性。然而，可以成功地使用对于用于将图像从转印层转印到掩模层的辐射基本上不透明的任何材料。

6. 发明授权

US5959325A Method for forming cornered images on a substrate and photomask formed thereby 失效
标题翻译：在基板上形成圆角图像的方法和由此形成的光掩模
公开(公告)号：US5959325A
公开(公告)日：1999-09-28
申请号：US917009
申请日：1997-08-21
申请人： William J. Adair , Richard A. Ferguson , Mark C. Hakey , Steven J. Holmes , David V. Horak , Robert K. Leidy , William Hsioh-Lien Ma , Ronald M. Martino , Song Peng
发明人： William J. Adair , Richard A. Ferguson , Mark C. Hakey , Steven J. Holmes , David V. Horak , Robert K. Leidy , William Hsioh-Lien Ma , Ronald M. Martino , Song Peng
IPC分类号： H01L21/033 , H01L21/8242 , H01L27/108
CPC分类号： H01L27/10864 , H01L21/0332 , H01L21/0334 , Y10S438/942
摘要： A method for forming square shape images in a lithographic process is disclosed wherein a first plurality of lines running in a first direction is defined in a first, usually sacrificial, layer, and then a second resist is defined wherein the lines run in an intersecting pattern to those of the first layer, thereby creating cornered images wherever the first and second layer intersect and in the open areas between the lines. Methods are proposed for developing the square intersecting areas and the square angle areas defined by the openings. Additionally, a photomask is disclosed in which the length and width of the cornered images are independently patterned using the two-exposure process.
摘要翻译：公开了一种在光刻工艺中形成正方形形状图像的方法，其中沿第一方向延伸的第一多条线被限定在第一，通常是牺牲层中，然后定义第二抗蚀剂，其中线以相交图案到第一层的那些，从而在第一和第二层交叉的任何地方以及在线之间的开放区域中产生拐角图像。提出了用于显影方形交叉区域和由开口限定的方角区域的方法。此外，公开了一种光掩模，其中使用双曝光工艺独立地对角形图像的长度和宽度进行图案化。

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