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1. 发明授权

US07368393B2 Chemical oxide removal of plasma damaged SiCOH low k dielectrics 有权
标题翻译：化学氧化物去除等离子体损坏的SiCOH低k电介质
公开(公告)号：US07368393B2
公开(公告)日：2008-05-06
申请号：US11308672
申请日：2006-04-20
申请人： William G. America , Steven H. Johnston , Brian W. Messenger
发明人： William G. America , Steven H. Johnston , Brian W. Messenger
IPC分类号： H01L21/3065
CPC分类号： H01L21/312 , H01L21/02063 , H01L21/02126 , H01L21/31633 , H01L21/76814
摘要： A method for removing damages of a dual damascene structure after plasma etching is disclosed. The method comprises the use of sublimation processes to deposit reactive material onto the damaged regions and conditions to achieve a controlled removal of the damaged region. Furthermore a semiconductor structure comprising a dual damascene structure that has been treated by the method is disclosed.
摘要翻译：公开了一种在等离子体蚀刻之后去除双镶嵌结构的损坏的方法。该方法包括使用升华过程将反应性材料沉积在受损区域上并实现对受损区域的控制去除的条件。此外，公开了一种包括已经通过该方法处理的双镶嵌结构的半导体结构。

2. 发明申请

US20080224273A1 CHEMICAL OXIDE REMOVAL OF PLASMA DAMAGED SICOH LOW K DIELECTRICS 有权
标题翻译：化学氧化物去除等离子体损耗的SICOH低K电介质
公开(公告)号：US20080224273A1
公开(公告)日：2008-09-18
申请号：US12044245
申请日：2008-03-07
申请人： William G. AMERICA , Steven H. Johnston , Brian W. Messenger
发明人： William G. AMERICA , Steven H. Johnston , Brian W. Messenger
IPC分类号： H01L23/58
CPC分类号： H01L21/312 , H01L21/02063 , H01L21/02126 , H01L21/31633 , H01L21/76814
摘要： A structure and method for removing damages of a dual damascene structure after plasma etching. The method includes the use of sublimation processes to deposit reactive material onto the damaged regions and conditions to achieve a controlled removal of the damaged region. Furthermore a semiconductor structure includes a dual damascene structure that has been treated by the method.
摘要翻译：等离子蚀刻后去除双镶嵌结构损坏的结构和方法。该方法包括使用升华过程将反应性材料沉积在受损区域上并且实现受损区域的受控去除的条件。此外，半导体结构包括已经通过该方法处理的双镶嵌结构。

3. 发明授权

US08106485B2 Chemical oxide removal of plasma damaged SiCOH low k dielectrics 有权
标题翻译：化学氧化物去除等离子体损坏的SiCOH低k电介质
公开(公告)号：US08106485B2
公开(公告)日：2012-01-31
申请号：US12044245
申请日：2008-03-07
申请人： William G. America , Steven H. Johnston , Brian W. Messenger
发明人： William G. America , Steven H. Johnston , Brian W. Messenger
IPC分类号： H01L29/06 , H01L21/44
CPC分类号： H01L21/312 , H01L21/02063 , H01L21/02126 , H01L21/31633 , H01L21/76814
摘要： A structure and method for removing damages of a dual damascene structure after plasma etching. The method includes the use of sublimation processes to deposit reactive material onto the damaged regions and conditions to achieve a controlled removal of the damaged region. Furthermore a semiconductor structure includes a dual damascene structure that has been treated by the method.
摘要翻译：等离子蚀刻后去除双镶嵌结构损坏的结构和方法。该方法包括使用升华过程将反应性材料沉积在受损区域上并实现受损区域的受控去除的条件。此外，半导体结构包括已经通过该方法处理的双镶嵌结构。

4. 发明授权

US07129159B2 Integrated dual damascene RIE process with organic patterning layer 有权
标题翻译：集成双镶嵌RIE工艺与有机图案层
公开(公告)号：US07129159B2
公开(公告)日：2006-10-31
申请号：US10921007
申请日：2004-08-17
申请人： William G. America , Steven H. Johnston
发明人： William G. America , Steven H. Johnston
IPC分类号： H01L21/4763
CPC分类号： H01L21/76811 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76813
摘要： A dual damascene conductor structure is formed on a substrate with an exposed conductor on top covered by a buried cap, a dielectric layer (DL) and an organic layer (OL). Form a lower via hard mask layers over the OL and form a top trench patterning hard mask over the lower, via hard mask. Form a trench pattern hole through the trench hard mask layer; and form a via pattern hole through the via hard mask layer in a region exposed below the trench pattern hole. Etch a via pattern hole into the OL and then etch a via pattern hole down into the DL. Etch away the trench pattern layer and the OL layer below the trench pattern hole. Etch the via hole through the DL exposing the cap while simultaneously partially etching the DL to a final trench depth to form a trench in the DL below the trench pattern hole, with the trench having a bottom above the cap and sidewalls in the DL.
摘要翻译：双镶嵌导体结构形成在衬底上，其中暴露的导体顶部由掩埋帽，介电层（DL）和有机层（OL）覆盖。通过OL上的硬掩模层形成下部通孔，并在下部通孔硬掩模上形成顶部沟槽图案化硬掩模。通过沟槽硬掩模层形成沟槽图案孔; 并且在暴露在沟槽图形孔下方的区域中通过通孔硬掩模层形成通孔图案孔。将通孔图案孔蚀刻到OL中，然后将通孔图案孔蚀刻到DL中。蚀刻沟槽图案层和沟槽图案孔下方的OL层。通过穿过盖的DL蚀刻通孔，同时将DL部分地蚀刻到最终的沟槽深度，以在沟槽图案孔下方的DL中形成沟槽，沟槽在帽的顶部和DL的侧壁中。

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