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1. 发明授权

US07776152B2 Method for continuous, in situ evaluation of entire wafers for macroscopic features during epitaxial growth 有权
标题翻译：用于在外延生长期间用于宏观特征的整个晶片的连续，原位评估的方法
公开(公告)号：US07776152B2
公开(公告)日：2010-08-17
申请号：US11555470
申请日：2006-11-01
申请人： William E. Hoke , Theodore D. Kennedy
发明人： William E. Hoke , Theodore D. Kennedy
IPC分类号： C30B27/02 , C30B15/00 , C30B15/26 , C30B15/30
CPC分类号： G01N21/9501 , C30B23/02 , C30B35/00 , G01N21/4738 , G01N21/8422 , G01N21/951 , G01N2021/8416 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012
摘要： Apparatus and method for growing and observing the growth of epitaxial layers on a wafer. The apparatus includes: epitaxial growth apparatus; a source of light mounted to illuminate an entire surface of the wafer in the apparatus during growth of the epitaxial layer on the entire surface of the wafer; and apparatus for observing scattering of the light from the entire surface of the wafer during growth of the epitaxial layer on the entire surface of the wafer. The method includes growing the epitaxial layer on a surface of the wafer and observing scattering of the light from the entire surface of the wafer during growth of the epitaxial layer on the entire surface of the wafer. The growing process is varied in accordance with the observation. With an epitaxial layer of gallium nitride (GaN) the entire surface of the wafer is observed for balls of gallium.
摘要翻译：用于生长和观察晶片上的外延层的生长的装置和方法。该装置包括：外延生长装置; 在所述晶片的整个表面上生长外延层期间，所述光源安装成照亮所述装置中晶片的整个表面; 以及用于在晶片的整个表面上生长外延层期间观察来自晶片的整个表面的光的散射的装置。该方法包括在晶片的表面上生长外延层，并且在晶片的整个表面上生长外延层期间观察来自晶片整个表面的光的散射。生长过程根据观察而变化。利用氮化镓（GaN）的外延层，可观察到晶圆的整个表面为镓球。

2. 发明申请

US20080098953A1 METHOD FOR CONTINUOUS, IN SITU EVALUATION OF ENTIRE WAFERS FOR MACROSCOPIC FEATURES DURING EPITAXIAL GROWTH 有权
标题翻译：连续性方法，在外延生长过程中，用于宏观特征的整体波形的评估方法
公开(公告)号：US20080098953A1
公开(公告)日：2008-05-01
申请号：US11555470
申请日：2006-11-01
申请人： William E. Hoke , Theodore D. Kennedy
发明人： William E. Hoke , Theodore D. Kennedy
IPC分类号： C30B15/26 , C30B15/30 , C30B11/00
CPC分类号： G01N21/9501 , C30B23/02 , C30B35/00 , G01N21/4738 , G01N21/8422 , G01N21/951 , G01N2021/8416 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012
摘要： Apparatus and method for growing and observing the growth of epitaxial layers on a wafer. The apparatus includes: epitaxial growth apparatus; a source of light mounted to illuminate an entire surface of the wafer in the apparatus during growth of the epitaxial layer on the entire surface of the wafer; and apparatus for observing scattering of the light from the entire surface of the wafer during growth of the epitaxial layer on the entire surface of the wafer. The method includes growing the epitaxial layer on a surface of the wafer and observing scattering of the light from the entire surface of the wafer during growth of the epitaxial layer on the entire surface of the wafer. The growing process is varied in accordance with the observation. With an epitaxial layer of gallium nitride (GaN) the entire surface of the wafer is observed for balls of gallium.
摘要翻译：用于生长和观察晶片上的外延层的生长的装置和方法。该装置包括：外延生长装置; 在所述晶片的整个表面上生长外延层期间，所述光源安装成照亮所述装置中晶片的整个表面; 以及用于在晶片的整个表面上生长外延层期间观察来自晶片的整个表面的光的散射的装置。该方法包括在晶片的表面上生长外延层，并且在晶片的整个表面上生长外延层期间观察来自晶片整个表面的光的散射。生长过程根据观察而变化。利用氮化镓（GaN）的外延层，可观察到晶圆的整个表面为镓球。

3. 发明授权

US06489639B1 High electron mobility transistor 有权
标题翻译：高电子迁移率晶体管
公开(公告)号：US06489639B1
公开(公告)日：2002-12-03
申请号：US09577508
申请日：2000-05-24
申请人： William E. Hoke , Peter J. Lemonias , Theodore D. Kennedy
发明人： William E. Hoke , Peter J. Lemonias , Theodore D. Kennedy
IPC分类号： H01L310328
CPC分类号： H01L29/66462 , H01L21/28587 , H01L29/205 , H01L29/7785
摘要： A semiconductor structure, e.g., a high electron mobility transistor structure, is formed by using metamorphic growth and strain compensation. The structure includes a substrate, a graded layer over the substrate, a first donor/barrier layer over the graded layer, and a channel layer over the first donor/barrier layer. The substrate has a substrate lattice constant, and the graded layer has a graded lattice constant. The graded layer has a first lattice constant near a bottom of the graded layer substantially equal to the substrate lattice constant and a second lattice constant near a top of the graded layer different than the first lattice constant. The first donor/barrier layer has a third lattice constant, and the channel layer has a fourth lattice constant. The second lattice constant is intermediate the third and fourth lattice constants.
摘要翻译：通过使用变质生长和应变补偿形成半导体结构，例如高电子迁移率晶体管结构。该结构包括衬底，衬底上的渐变层，梯度层上的第一施主/势垒层，以及在第一施主/阻挡层上的沟道层。衬底具有衬底晶格常数，并且渐变层具有梯度晶格常数。渐变层在梯度层的底部附近具有基本上等于衬底晶格常数的第一晶格常数，并且在渐变层的顶部附近的第二晶格常数不同于第一晶格常数。第一施主/势垒层具有第三晶格常数，沟道层具有第四晶格常数。第二晶格常数在第三和第四晶格常数之间。

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