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1. 发明授权

US5614427A Method of making an array of TFTs having reduced parasitic capacitance 失效
标题翻译：制造具有降低的寄生电容的TFT阵列的方法
公开(公告)号：US5614427A
公开(公告)日：1997-03-25
申请号：US375658
申请日：1995-01-20
申请人： Willem den Boer , Mohshi Yang
发明人： Willem den Boer , Mohshi Yang
IPC分类号： G02F1/1368 , H01L27/12 , H01L29/423 , H01L29/786 , H01L21/265
CPC分类号： H01L29/78696 , G02F1/1368 , H01L27/12 , H01L29/42384
摘要： A thin film transistor (TFT) array in an active matrix liquid crystal display (AMLCD) including a centrally located round source electrode completely surrounded by a substantially annular or circular shaped drain electrode. The geometric design of the TFT of this invention provides for a thin film transistor having a reduced parasitic capacitance and decreased photosensitivity. The TFTs of this invention are located at the intersections of gate and drain lines of an active matrix LCD array thereby increasing the size of the pixel display openings of the matrix array.
摘要翻译：有源矩阵液晶显示器（AMLCD）中的薄膜晶体管（TFT）阵列，其包括由基本上环形或圆形的漏极电极完全包围的居中定位的圆形源电极。本发明的TFT的几何设计提供了具有降低的寄生电容和降低的光敏性的薄膜晶体管。本发明的TFT位于有源矩阵LCD阵列的栅极和漏极线的交点处，从而增加矩阵阵列的像素显示开口的尺寸。

2. 发明授权

US5414283A TFT with reduced parasitic capacitance 失效
标题翻译：降低寄生电容的TFT
公开(公告)号：US5414283A
公开(公告)日：1995-05-09
申请号：US154713
申请日：1993-11-19
申请人： Willem den Boer , Mohshi Yang
发明人： Willem den Boer , Mohshi Yang
IPC分类号： G02F1/1368 , H01L27/12 , H01L29/423 , H01L29/786 , H01L27/01 , H01L27/13 , H01L29/78
CPC分类号： H01L29/78696 , G02F1/1368 , H01L27/12 , H01L29/42384
摘要： A thin film transistor (TFT) array in an active matrix liquid crystal display (AMLCD) including a centrally located round source electrode substantially completely surrounded by a substantially annular or circular shaped drain electrode. The geometric design of the TFT of this invention provides for a thin film transistor having a reduced parasitic capacitance and decreased photosensitivity. The TFTs of this invention are located at the intersections of gate and drain lines of an active matrix LCD array thereby increasing the size of the pixel display openings of the matrix array.
摘要翻译：一种有源矩阵液晶显示器（AMLCD）中的薄膜晶体管（TFT）阵列，其包括基本上完全被基本上环形或圆形的漏极电极包围的居中定位的圆形源电极。本发明的TFT的几何设计提供了具有降低的寄生电容和降低的光敏性的薄膜晶体管。本发明的TFT位于有源矩阵LCD阵列的栅极和漏极线的交点处，从而增加矩阵阵列的像素显示开口的尺寸。

3. 发明申请

US20190198868A1 Porous Silicon Flake Anode Material for Li Ion Batteries 审中-公开
公开(公告)号：US20190198868A1
公开(公告)日：2019-06-27
申请号：US16176455
申请日：2018-10-31
申请人： Yunjun Li , Igor Pavlovsky , Mohshi Yang
发明人： Yunjun Li , Igor Pavlovsky , Mohshi Yang
IPC分类号： H01M4/38 , H01M10/0525 , H01M4/36 , H01M4/587
CPC分类号： H01M4/386 , H01M4/366 , H01M4/587 , H01M10/0525 , H01M2004/021 , H01M2004/027
摘要： A silicon based material in the form of sheet-like silicon porous particles in an electrically conductive material matrix wherein said silicon particles contain nano-sized pores, and a method of producing thereof, are disclosed. The material and the method allow obtaining Li ion batteries with high electric charge capacity and improved cycling performance of the battery anode.

4. 发明授权

US10231344B2 Metallic ink 有权
公开(公告)号：US10231344B2
公开(公告)日：2019-03-12
申请号：US12121260
申请日：2008-05-15
申请人： Yunjun Li , David Max Roundhill , Mohshi Yang , Igor Pavlovsky , Richard Lee Fink , Zvi Yaniv
发明人： Yunjun Li , David Max Roundhill , Mohshi Yang , Igor Pavlovsky , Richard Lee Fink , Zvi Yaniv
IPC分类号： B05D3/06 , H05K3/02 , C23C18/14 , B22F1/00 , B22F1/02 , C22C47/04 , H01B1/02 , H05K1/03
摘要： Forming a conductive film comprising depositing a non-conductive film on a surface of a substrate, wherein the film contains a plurality of copper nanoparticles and exposing at least a portion of the film to light to make the exposed portion conductive. Exposing of the film to light photosinters or fuses the copper nanoparticles.

5. 发明授权

US07560134B2 Nanoparticle implantation 失效
标题翻译：纳米颗粒植入
公开(公告)号：US07560134B2
公开(公告)日：2009-07-14
申请号：US11570912
申请日：2005-06-28
申请人： Zvi Yaniv , Richard Lee Fink , Mohshi Yang
发明人： Zvi Yaniv , Richard Lee Fink , Mohshi Yang
IPC分类号： B05D5/06 , B05D5/12 , B05D1/12 , B05D7/00
CPC分类号： H01J9/025 , B82Y10/00 , B82Y30/00 , H01J2201/30469
摘要： A method for forming a coating of nano-sized material on the surface of another material using a micromachining bead-blasting machine for implantation of nanoparticles is disclosed. The method can be practiced with a wide range of target materials, nanoparticles (such as carbon-nanotubes, CNTs), and environmental conditions, using a wide range of carrier bead sizes and materials, or without carrier beads. The claimed implantation method can be used to fabricate a surface-activated CNT-cathode for use in a field emission device. The implantation method can also be used for chemically reacting any of the materials present near the point of impact with each other.
摘要翻译：公开了一种使用用于注入纳米颗粒的微加工珠粒喷射机在另一材料的表面上形成纳米尺寸材料的涂层的方法。该方法可以使用宽范围的靶材料，纳米颗粒（例如碳纳米管，CNT）和环境条件，使用各种载体珠粒径和材料，或不含载体珠粒来实施。所要求的植入方法可以用于制造用于场发射装置中的表面活化的CNT-阴极。该植入方法也可用于化学反应存在于冲击点附近的任何材料。

6. 发明申请

US20080193634A1 Nanoparticle Implantation 失效
标题翻译：纳米颗粒植入
公开(公告)号：US20080193634A1
公开(公告)日：2008-08-14
申请号：US11570912
申请日：2005-06-28
申请人： Zvi Yaniv , Richard Lee Fink , Mohshi Yang
发明人： Zvi Yaniv , Richard Lee Fink , Mohshi Yang
IPC分类号： B05D5/12 , B05D1/12
CPC分类号： H01J9/025 , B82Y10/00 , B82Y30/00 , H01J2201/30469
摘要： A method for forming a coating of nano-sized material on the surface of another material using a micromachining bead-blasting machine for implantation of nanoparticles is disclosed. The method can be practiced with a wide range of target materials, nanoparticles (such as carbon-nanotubes, CNTs), and environmental conditions, using a wide range of carrier bead sizes and materials, or without carrier beads. The claimed implantation method can be used to fabricate a surface-activated CNT-cathode for use in a field emission device. The implantation method can also be used for chemically reacting any of the materials present near the point of impact with each other.
摘要翻译：公开了一种使用用于注入纳米颗粒的微加工珠粒喷射机在另一材料的表面上形成纳米尺寸材料的涂层的方法。该方法可以使用宽范围的靶材料，纳米颗粒（例如碳纳米管，CNT）和环境条件，使用各种载体珠粒径和材料，或不含载体珠粒来实施。所要求的植入方法可以用于制造用于场发射装置中的表面活化的CNT-阴极。该植入方法也可用于化学反应存在于冲击点附近的任何材料。

7. 发明申请

US20080078234A1 FORMATION OF METAL NANOWIRES FOR USE AS VARIABLE-RANGE HYDROGEN SENSORS 失效
标题翻译：形成用作可变范围的氢传感器的金属纳米颗粒
公开(公告)号：US20080078234A1
公开(公告)日：2008-04-03
申请号：US11486558
申请日：2006-07-14
申请人： Greg Monty , Kwok Ng , Mohshi Yang
发明人： Greg Monty , Kwok Ng , Mohshi Yang
IPC分类号： G01N27/00 , B82B3/00
CPC分类号： G01N27/127 , G01N33/005
摘要： The present invention provides for variable-range hydrogen sensors and methods for making same. Such variable-range hydrogen sensors comprise a series of fabricated Pd—Ag (palladium-silver) nanowires—each wire of the series having a different Ag to Pd ratio—with nanobreakjunctions in them and wherein the nanowires have predefined dimensions and orientation. When the nanowires are exposed to H2, their lattace swells when the H2 concentration reaches a threshold value (unique to that particular ratio of Pd to Ag). This causes the nanobreakjunctions to close leading to a 6-8 orders of magnitude decrease in the resistance along the length of the wire and providing a sensing mechanism for a range of hydrogen concentrations.
摘要翻译：本发明提供可变范围氢传感器及其制造方法。这种可变范围氢传感器包括一系列制备的Pd-Ag（钯 - 银）纳米线 - 该系列中的每根线具有不同的Ag与Pd的比例，并且其中纳米区域结合在一起，并且其中纳米线具有预定义的尺寸和取向。当纳米线暴露于H 2 O 2时，当H 2 O 2浓度达到阈值（对于特定的Pd与Ag的比率是唯一的）时，它们的晶格膨胀。这导致纳米划痕结合，导致沿导线长度的电阻降低6-8个数量级，并为一定范围的氢浓度提供感测机制。

8. 发明授权

US06580211B1 Triode assembly for carbon cold cathode 失效
标题翻译：碳冷阴极三极管组件
公开(公告)号：US06580211B1
公开(公告)日：2003-06-17
申请号：US09522208
申请日：2000-03-09
申请人： Mohshi Yang , Leif Thuesen , Richard Lee Fink , Zvi Yaniv
发明人： Mohshi Yang , Leif Thuesen , Richard Lee Fink , Zvi Yaniv
IPC分类号： H01J162
CPC分类号： B82Y10/00 , H01J3/022 , H01J2201/30469 , H01J2329/00
摘要： A triode structure code cathode assembly is produced by depositing a carbon emitter material onto a substrate to form a cathode structure. Then, an insulating layer is deposited onto one side of a mesh foil to form a mesh assembly. This mesh assembly is then mechanically attached to the cathode structure so that the insulating layer on the one side of the mesh assembly is contacting the cathode structure. This entire triode cathode assembly can then be used to produce a field emission display device by including an anode structure.
摘要翻译：三极管结构编码阴极组件通过将碳发射体材料沉积到衬底上以形成阴极结构来制造。然后，将绝缘层沉积在网状箔的一侧以形成网状组件。然后将该网眼组件机械地附接到阴极结构，使得网状组件的一侧上的绝缘层与阴极结构接触。然后可以将该整个三极管阴极组件用于通过包括阳极结构来产生场致发射显示装置。

9. 发明申请

US20120049384A1 Buffer Layer to Enhance Photo and/or Laser Sintering 有权
标题翻译：缓冲层以增强照片和/或激光烧结
公开(公告)号：US20120049384A1
公开(公告)日：2012-03-01
申请号：US13260893
申请日：2010-03-26
申请人： Zvi Yaniv , Mohshi Yang , Peter B. Laxton
发明人： Zvi Yaniv , Mohshi Yang , Peter B. Laxton
IPC分类号： H01L23/48 , H05K1/11 , H05K3/02 , H01L21/768 , H05K1/09 , B82Y99/00 , B82Y40/00
CPC分类号： H05K1/092 , B22F3/105 , B22F7/04 , B22F2998/00 , B23K26/32 , B23K26/34 , B23K35/0244 , B23K2101/36 , B23K2103/50 , B23K2103/52 , H01L21/268 , H01L21/288 , H01L21/4867 , H01L21/76877 , H01L2924/0002 , H05K1/0201 , H05K3/10 , H05K3/125 , H05K3/1283 , H05K3/4664 , H05K2201/062 , H05K2203/107 , Y10T29/49156 , B22F1/0018 , H01L2924/00
摘要： Conductive lines are deposited on a substrate to produce traces for conducting electricity between electronic components. A patterned metal layer is formed on the substrate, and then a layer of material having a low thermal conductivity is coated over the patterned metal layer and the substrate. Vias are formed through the layer of material having the low thermal conductivity thereby exposing portions of the patterned metal layer. A film of conductive ink is then coated over the layer of material having the low thermal conductivity and into the vias to thereby coat the portions of the patterned metal layer, and then sintered. The film of conductive ink coated over the portion of the patterned metal layer does not absorb as much energy from the sintering as the film of conductive ink coated over the layer of material having the low thermal conductivity. The layer of material having the low thermal conductivity may be a polymer, such as polyimide.
摘要翻译：导电线被沉积在衬底上以产生用于在电子部件之间传导电力的迹线。在基板上形成图案化的金属层，然后在图案化的金属层和基板上涂覆具有低热导率的材料层。通过具有低热导率的材料层形成通孔，从而暴露图案化金属层的部分。然后将导电油墨膜涂覆在具有低热导率的材料层上并进入通孔中，从而涂覆图案化金属层的部分，然后烧结。涂覆在图案化金属层的部分上的导电油墨的膜不像在具有低热导率的材料层上涂覆导电油墨的膜那样吸收与烧结相同的能量。具有低热导率的材料层可以是聚合物，例如聚酰亚胺。

10. 发明申请

US20110027603A1 Enhancing Thermal Properties of Carbon Aluminum Composites 审中-公开
标题翻译：提高碳铝复合材料的热性能
公开(公告)号：US20110027603A1
公开(公告)日：2011-02-03
申请号：US12629853
申请日：2009-12-02
申请人： Zvi Yaniv , Igor Pavlovsky , Nan Jiang , James P. Novak , Richard Fink , Mohshi Yang , Dongsheng Mao , Samuel Kim
发明人： Zvi Yaniv , Igor Pavlovsky , Nan Jiang , James P. Novak , Richard Fink , Mohshi Yang , Dongsheng Mao , Samuel Kim
IPC分类号： B32B5/18 , B32B3/26 , B21C23/24
CPC分类号： B32B5/18 , C04B35/522 , C04B35/528 , C04B35/645 , C04B41/009 , C04B41/5155 , C04B41/88 , C04B2111/00844 , C04B2235/3817 , C04B2235/3826 , C04B2235/402 , C04B2235/428 , C04B2235/6021 , C04B2235/616 , C04B2235/80 , C04B2235/9607 , C09K5/14 , C22C1/08 , C22C1/1036 , C22C32/0084 , C22C2001/081 , H01L23/373 , H01L23/3736 , H01L2924/0002 , H01L2924/3011 , Y10T428/12042 , Y10T428/249994 , C04B41/4521 , C04B41/4523 , C04B41/5096 , H01L2924/00
摘要： An article of manufacture comprises a carbon-containing matrix. The carbon-containing matrix may comprise at least one type of carbon material selected from the group comprising graphite crystalline carbon materials, carbon powder, and artificial graphite powder. In addition, the carbon-containing matrix comprises a plurality of pores. The article of manufacture also comprises a metal component comprising Al, alloys of Al, or combinations thereof. The metal component is disposed in at least a portion of the plurality of pores. Further, the article of manufacture comprises an additive comprising at least Si. At least a portion of the additive is disposed in an interface between the metal component within the pores and the carbon-containing matrix. The additive enhances phonon coupling and propagation at the interface.
摘要翻译：制品包括含碳基质。含碳基质可以包含选自包括石墨结晶碳材料，碳粉末和人造石墨粉末的组的至少一种类型的碳材料。此外，含碳基质包含多个孔。该制品还包括包含Al，Al的合金或其组合的金属组分。金属部件设置在多个孔的至少一部分中。此外，制品包含至少包含Si的添加剂。至少一部分添加剂被设置在孔内的金属组分和含碳基质之间的界面中。该添加剂增强了界面处的声子耦合和传播。

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