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1. 发明申请

US20090133474A1 METHOD AND APPARATUS FOR SENSING HYDROGEN GAS 失效
标题翻译：用于感应氢气的方法和装置
公开(公告)号：US20090133474A1
公开(公告)日：2009-05-28
申请号：US11928373
申请日：2007-10-30
申请人： KWOK NG , GREG MONTY , YUNJUN LI , ZVI YANIV , PRABHU SOUNDARRAJAN
发明人： KWOK NG , GREG MONTY , YUNJUN LI , ZVI YANIV , PRABHU SOUNDARRAJAN
IPC分类号： G01N7/00
CPC分类号： B82Y15/00 , G01N27/127 , G01N33/005
摘要： A hydrogen sensor and/or switch fabricated from an array of nanowires or a nanoparticle thick film composed of metal or metal alloys. The sensor and/or switch demonstrates a wide operating temperature range and shortened response time due to fabrication materials and methods. The nanowires or nanoparticle thick films demonstrate an increase in conductivity in the presence of hydrogen.
摘要翻译：由纳米线阵列或由金属或金属合金构成的纳米颗粒厚膜制成的氢传感器和/或开关。由于制造材料和方法，传感器和/或开关显示出宽的工作温度范围和缩短的响应时间。在存在氢的情况下，纳米线或纳米颗粒厚膜表现出导电性的增加。

2. 发明授权

US07287412B2 Method and apparatus for sensing hydrogen gas 失效
标题翻译：检测氢气的方法和装置
公开(公告)号：US07287412B2
公开(公告)日：2007-10-30
申请号：US10854420
申请日：2004-05-26
申请人： Kwok Ng , Greg Monty , Yunjun Li , Zvi Yaniv , Prabhu Soundarrajan
发明人： Kwok Ng , Greg Monty , Yunjun Li , Zvi Yaniv , Prabhu Soundarrajan
IPC分类号： G01N27/04 , G01N30/64 , G01N33/22
CPC分类号： B82Y15/00 , G01N27/127 , G01N33/005
摘要： A hydrogen sensor and/or switch fabricated from an array of nanowires or a nanoparticle thick film composed of metal or metal alloys. The sensor and/or switch demonstrates a wide operating temperature range and shortened response time due to fabrication materials and methods. The nanowires or nanoparticle thick films demonstrate an increase in conductivity in the presence of hydrogen.
摘要翻译：由纳米线阵列或由金属或金属合金构成的纳米颗粒厚膜制成的氢传感器和/或开关。由于制造材料和方法，传感器和/或开关显示出宽的工作温度范围和缩短的响应时间。在存在氢的情况下，纳米线或纳米颗粒厚膜表现出导电性的增加。

3. 发明授权

US07237429B2 Continuous-range hydrogen sensors 失效
标题翻译：连续式氢传感器
公开(公告)号：US07237429B2
公开(公告)日：2007-07-03
申请号：US11063119
申请日：2005-02-22
申请人： Greg Monty , Kwok Ng , Mohshi Yang , Richard Finh
发明人： Greg Monty , Kwok Ng , Mohshi Yang , Richard Finh
IPC分类号： G01N7/00
CPC分类号： G01N27/127 , G01N33/005
摘要： The present invention provides for novel hydrogen sensors and methods for making same. In some embodiments, such novel hydrogen sensors are continuous-range hydrogen sensors comprising Pd—Ag nanoparticles arrayed as nanowires or two-dimensional shapes on a resistive surface. Such continuous-range hydrogen sensors are capable of measuring a wide range of hydrogen gas concentration over a wide temperature range. Unlike existing hydrogen sensors that experience a large change in resistance at a certain hydrogen concentration, the continuous-range hydrogen sensor of the present invention changes resistance continuously over a broad range of hydrogen concentration. This continuous change varies slowly with hydrogen concentration and is predictable such that the continuous-range hydrogen sensor can be used to measure hydrogen concentration continuously from a few ppm to 40,000 ppm level or higher over a broad range of temperatures (e.g., −40° C. to +150° C.).
摘要翻译：本发明提供新颖的氢传感器及其制造方法。在一些实施方案中，这种新型氢传感器是连续范围的氢传感器，其包括在电阻表面上排列为纳米线或二维形状的Pd-Ag纳米颗粒。这种连续范围的氢传感器能够在宽的温度范围内测量宽范围的氢气浓度。与现有氢传感器不同，在一定的氢浓度下，电阻的变化很大，本发明的连续范围氢传感器在宽范围的氢浓度下连续地改变电阻。这种连续变化随氢气浓度而变化缓慢，并且是可预测的，使得连续范围氢传感器可用于在宽范围的温度（例如-40℃）下连续测量从几ppm到40,000ppm水平或更高的氢浓度至+ 150℃）。

4. 发明授权

US07511333B2 Nonvolatile memory cell with multiple floating gates and a connection region in the channel 有权
标题翻译：具有多个浮动栅极和通道中的连接区域的非易失性存储单元
公开(公告)号：US07511333B2
公开(公告)日：2009-03-31
申请号：US11246447
申请日：2005-10-06
申请人： Yue-Song He , Chung Wai Leung , Jin-Ho Kim , Kwok Kwok Ng
发明人： Yue-Song He , Chung Wai Leung , Jin-Ho Kim , Kwok Kwok Ng
IPC分类号： H01L27/115 , H01L29/66
CPC分类号： H01L29/42336 , G11C16/0458 , G11C16/0491 , H01L27/115 , H01L27/11521
摘要： A memory cell (110) has a plurality of floating gates (120L, 120R). The channel region (170) comprises a plurality of sub-regions (220L, 220R) adjacent to the respective floating gates, and a connection region (210) between the floating gates. The connection region has the same conductivity type as the source/drain regions (160) to increase the channel conductivity. Therefore, the floating gates can be brought closer together even though the inter-gate dielectric (144) becomes thick between the floating gates, weakening the control gate's (104) electrical field in the channel.
摘要翻译：存储单元（110）具有多个浮动栅极（120L，120R）。沟道区域（170）包括与相应浮动栅极相邻的多个子区域（220L，220R），以及浮置栅极之间的连接区域（210）。连接区域具有与源极/漏极区域（160）相同的导电类型以增加沟道导电性。因此，即使栅极间电介质（144）在浮置栅极之间变厚，削弱了沟道中的控制栅极（104）电场，浮动栅极也可以更靠近在一起。

5. 发明申请

US20080078234A1 FORMATION OF METAL NANOWIRES FOR USE AS VARIABLE-RANGE HYDROGEN SENSORS 失效
标题翻译：形成用作可变范围的氢传感器的金属纳米颗粒
公开(公告)号：US20080078234A1
公开(公告)日：2008-04-03
申请号：US11486558
申请日：2006-07-14
申请人： Greg Monty , Kwok Ng , Mohshi Yang
发明人： Greg Monty , Kwok Ng , Mohshi Yang
IPC分类号： G01N27/00 , B82B3/00
CPC分类号： G01N27/127 , G01N33/005
摘要： The present invention provides for variable-range hydrogen sensors and methods for making same. Such variable-range hydrogen sensors comprise a series of fabricated Pd—Ag (palladium-silver) nanowires—each wire of the series having a different Ag to Pd ratio—with nanobreakjunctions in them and wherein the nanowires have predefined dimensions and orientation. When the nanowires are exposed to H2, their lattace swells when the H2 concentration reaches a threshold value (unique to that particular ratio of Pd to Ag). This causes the nanobreakjunctions to close leading to a 6-8 orders of magnitude decrease in the resistance along the length of the wire and providing a sensing mechanism for a range of hydrogen concentrations.
摘要翻译：本发明提供可变范围氢传感器及其制造方法。这种可变范围氢传感器包括一系列制备的Pd-Ag（钯 - 银）纳米线 - 该系列中的每根线具有不同的Ag与Pd的比例，并且其中纳米区域结合在一起，并且其中纳米线具有预定义的尺寸和取向。当纳米线暴露于H 2 O 2时，当H 2 O 2浓度达到阈值（对于特定的Pd与Ag的比率是唯一的）时，它们的晶格膨胀。这导致纳米划痕结合，导致沿导线长度的电阻降低6-8个数量级，并为一定范围的氢浓度提供感测机制。

6. 发明申请

US20050103071A1 Key holder 审中-公开
标题翻译：钥匙扣
公开(公告)号：US20050103071A1
公开(公告)日：2005-05-19
申请号：US10934710
申请日：2004-09-03
申请人： Kwok Ng
发明人： Kwok Ng
IPC分类号： A44B15/00 , A45F5/02 , A45C11/32 , A47G29/10
CPC分类号： A44B15/00 , Y10T70/8676 , Y10T70/8757
摘要： A key holder comprising a key ring made of steel wire stock employs a holder body with an annular locking member. The locking member employs a groove for receiving a connector of the key ring and a spring and a steel ball.
摘要翻译：包括由钢丝绳制成的钥匙环的钥匙保持架采用具有环形锁定件的保持器主体。锁定构件采用用于接收钥匙环的连接器的槽和弹簧和钢球。

7. 发明授权

US5744840A Electrostatic protection devices for protecting semiconductor integrated circuitry 失效
标题翻译：用于保护半导体集成电路的静电保护装置
公开(公告)号：US5744840A
公开(公告)日：1998-04-28
申请号：US560671
申请日：1995-11-20
申请人： Kwok Kwok Ng
发明人： Kwok Kwok Ng
IPC分类号： H01L27/04 , H01L21/822 , H01L23/60 , H01L27/02 , H01L29/78 , H01L23/62
CPC分类号： H01L27/0259 , H01L27/0255
摘要： Protecting device structures are disclosed for protecting one or more protected nodes of an integrated circuit to be protected against electrostatic discharges (ESD). Typically the integrated circuit includes n channel MOS transistors having terminals connected to the protected nodes. In a specific embodiment, the protecting device structure includes an MOS diode structure having source and drain regions and at least a pair of localized auxiliary region. Each of this pair of localized auxiliary regions has a conductivity type that is opposite from that of the source and drain regions. These localized auxiliary regions are located contiguous with the source and drain regions, respectively, and in the channel between the source and drain regions. The protecting device structure is integrated in the integrated circuit and has a terminal that is connected to a terminal of each of the one or more protected nodes of the integrated circuit.
摘要翻译：公开了保护装置结构，用于保护被保护免受静电放电（ESD）的集成电路的一个或多个受保护节点。通常，集成电路包括具有连接到受保护节点的端子的n沟道MOS晶体管。在具体实施例中，保护装置结构包括具有源极和漏极区域以及至少一对局部辅助区域的MOS二极管结构。这对局部辅助区域中的每一个具有与源区和漏区相反的导电类型。这些局部辅助区域分别与源极和漏极区域以及在源极和漏极区域之间的沟道中定位。保护装置结构集成在集成电路中，并且具有连接到集成电路的一个或多个受保护节点中的每一个的终端的终端。

8. 发明授权

US07762121B2 Method and apparatus for sensing hydrogen gas 失效
标题翻译：检测氢气的方法和装置
公开(公告)号：US07762121B2
公开(公告)日：2010-07-27
申请号：US11928373
申请日：2007-10-30
申请人： Kwok Ng , Greg Monty , Yunjun Li , Zvi Yaniv , Prabhu Soundarrajan
发明人： Kwok Ng , Greg Monty , Yunjun Li , Zvi Yaniv , Prabhu Soundarrajan
IPC分类号： G01N27/04 , G01N30/64 , G01N33/22
CPC分类号： B82Y15/00 , G01N27/127 , G01N33/005
摘要： A hydrogen sensor and/or switch fabricated from an array of nanowires or a nanoparticle thick film composed of metal or metal alloys. The sensor and/or switch demonstrates a wide operating temperature range and shortened response time due to fabrication materials and methods. The nanowires or nanoparticle thick films demonstrate an increase in conductivity in the presence of hydrogen.
摘要翻译：由纳米线阵列或由金属或金属合金构成的纳米颗粒厚膜制成的氢传感器和/或开关。由于制造材料和方法，传感器和/或开关显示出宽的工作温度范围和缩短的响应时间。在存在氢的情况下，纳米线或纳米颗粒厚膜表现出导电性的增加。

9. 发明授权

US07367215B2 Formation of metal nanowires for use as variable-range hydrogen sensors 失效
标题翻译：用作可变范围氢传感器的金属纳米线的形成
公开(公告)号：US07367215B2
公开(公告)日：2008-05-06
申请号：US11486558
申请日：2006-07-14
申请人： Greg Monty , Kwok Ng , Mohshi Yang
发明人： Greg Monty , Kwok Ng , Mohshi Yang
IPC分类号： G01N7/00
CPC分类号： G01N27/127 , G01N33/005
摘要： The present invention provides for variable-range hydrogen sensors and methods for making same. Such variable-range hydrogen sensors comprise a series of fabricated Pd—Ag (palladium-silver) nanowires—each wire of the series having a different Ag to Pd ratio—with nanobreakjunctions in them and wherein the nanowires have predefined dimensions and orientation. When the nanowires are exposed to H2, their lattice swells when the H2 concentration reaches a threshold value (unique to that particular ratio of Pd to Ag). This causes the nanobreakjunctions to close leading to a 6-8 orders of magnitude decrease in the resistance along the length of the wire and providing a sensing mechanism for a range of hydrogen concentrations.
摘要翻译：本发明提供可变范围氢传感器及其制造方法。这种可变范围氢传感器包括一系列制备的Pd-Ag（钯 - 银）纳米线 - 该系列中的每根线具有不同的Ag与Pd的比例，并且其中纳米区域结合在一起，并且其中纳米线具有预定义的尺寸和取向。当纳米线暴露于H 2 O 2时，当H 2 O 2浓度达到阈值（对于特定的Pd与Ag的比率是唯一的）时，它们的晶格膨胀。这导致纳米划痕结合，导致沿导线长度的电阻降低6-8个数量级，并为一定范围的氢浓度提供感测机制。

10. 发明申请

US20070096146A1 III-V power field effect transistors 失效
公开(公告)号：US20070096146A1
公开(公告)日：2007-05-03
申请号：US11641507
申请日：2006-12-19
申请人： Jeff Bude , Peide Ye , Kwok Ng , Bin Yang
发明人： Jeff Bude , Peide Ye , Kwok Ng , Bin Yang
IPC分类号： H01L29/43 , H01L29/74 , H01L31/111
CPC分类号： H01L29/4983 , H01L29/812
摘要： A field effect transistor configured for use in high power applications and a method for its fabrication is disclosed. The field effect transistor is formed of III-V materials and is configured to have a breakdown voltage that is advantageous for high power applications. The field effect transistor is so configured by determining the operating voltage and the desired breakdown voltage for that operating voltage. A peak electric field is then identified that is associated with the operating voltage and desired breakdown voltage. The device is then configured to exhibit the identified peak electric field at that operating voltage. The device is so configured by selecting device features that control the electrical potential in the device drift region is achieved. These features include the use of an overlapping gate or field plate in conjunction with a barrier layer overlying the device channel, or a p-type pocket formed in a region of single-crystal III-V material formed under the device channel. The overlapping gate/field plate or p-type pocket extend into the drift region of the device, controlling the electrical potential of the device in a manner that provides the desired control of the electrical potential in the drift region.

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