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1. 发明申请

US20090179307A1 INTEGRATED CIRCUIT SYSTEM EMPLOYING FEED-FORWARD CONTROL 审中-公开
标题翻译：集成电路系统采用进给控制
公开(公告)号：US20090179307A1
公开(公告)日：2009-07-16
申请号：US12014448
申请日：2008-01-15
申请人： Wenzhan Zhou , Jasper Goh , Hui Peng Koh , Jung Yu Hsieh , Meisheng Zhou
发明人： Wenzhan Zhou , Jasper Goh , Hui Peng Koh , Jung Yu Hsieh , Meisheng Zhou
IPC分类号： H01L23/58 , H01L21/66
CPC分类号： H01L22/12
摘要： An integrated circuit system that includes: providing a substrate and a material layer; measuring a parameter of the material layer; and correlating the thickness of an anti-reflective layer to the measured parameter of the material layer for critical dimension control.
摘要翻译：一种集成电路系统，包括：提供基板和材料层; 测量材料层的参数; 并且将抗反射层的厚度与关键尺寸控制的材料层的测量参数相关联。

2. 发明授权

US07892900B2 Integrated circuit system employing sacrificial spacers 有权
标题翻译：采用牺牲间隔物的集成电路系统
公开(公告)号：US07892900B2
公开(公告)日：2011-02-22
申请号：US12098751
申请日：2008-04-07
申请人： Huang Liu , Wei Lu , Hai Cong , Alex K. H. See , Hui Peng Koh , Meisheng Zhou
发明人： Huang Liu , Wei Lu , Hai Cong , Alex K. H. See , Hui Peng Koh , Meisheng Zhou
IPC分类号： H01L21/00 , H01L21/84 , H01L21/336
CPC分类号： H01L21/823807 , H01L21/823864 , H01L29/7843
摘要： An integrated circuit system that includes: providing a substrate including a first device and a second device; configuring the first device and the second device to include a first spacer, a first liner made from a first dielectric layer, and a second spacer made from a sacrificial spacer material; forming a second dielectric layer over the integrated circuit system; forming a first device source/drain and a second device source/drain adjacent the second spacer and through the second dielectric layer; removing the second spacer without damaging the substrate; forming a third dielectric layer over the integrated circuit system before annealing; and forming a fourth dielectric layer over the integrated circuit system that promotes stress within the channel of the first device, the second device, or a combination thereof.
摘要翻译：一种集成电路系统，包括：提供包括第一装置和第二装置的基板; 配置第一器件和第二器件以包括第一间隔物，由第一介电层制成的第一衬垫和由牺牲间隔物材料制成的第二间隔物; 在所述集成电路系统上形成第二电介质层; 形成第一器件源极/漏极和邻近第二间隔物并通过第二介电层的第二器件源极/漏极; 去除所述第二间隔物而不损坏所述基底; 在退火之前在集成电路系统上形成第三电介质层; 以及在所述集成电路系统上形成促进所述第一装置，所述第二装置或其组合的通道内的应力的第四电介质层。

3. 发明申请

US20090250762A1 INTEGRATED CIRCUIT SYSTEM EMPLOYING SACRIFICIAL SPACERS 有权
标题翻译：集成电路系统采用真空间隔
公开(公告)号：US20090250762A1
公开(公告)日：2009-10-08
申请号：US12098751
申请日：2008-04-07
申请人： Huang Liu , Wei Lu , Hai Cong , Alex K.H. See , Hui Peng Koh , Meisheng Zhou
发明人： Huang Liu , Wei Lu , Hai Cong , Alex K.H. See , Hui Peng Koh , Meisheng Zhou
IPC分类号： H01L21/8238
CPC分类号： H01L21/823807 , H01L21/823864 , H01L29/7843
摘要： An integrated circuit system that includes: providing a substrate including a first device and a second device; configuring the first device and the second device to include a first spacer, a first liner made from a first dielectric layer, and a second spacer made from a sacrificial spacer material; forming a second dielectric layer over the integrated circuit system; forming a first device source/drain and a second device source/drain adjacent the second spacer and through the second dielectric layer; removing the second spacer without damaging the substrate; forming a third dielectric layer over the integrated circuit system before annealing; and forming a fourth dielectric layer over the integrated circuit system that promotes stress within the channel of the first device, the second device, or a combination thereof.
摘要翻译：一种集成电路系统，包括：提供包括第一装置和第二装置的基板; 配置第一器件和第二器件以包括第一间隔物，由第一介电层制成的第一衬垫和由牺牲间隔物材料制成的第二间隔物; 在所述集成电路系统上形成第二电介质层; 形成第一器件源极/漏极和邻近第二间隔物并通过第二介电层的第二器件源极/漏极; 去除所述第二间隔物而不损坏所述基底; 在退火之前在集成电路系统上形成第三电介质层; 以及在所述集成电路系统上形成促进所述第一装置，所述第二装置或其组合的通道内的应力的第四电介质层。

4. 发明申请

US20110157567A1 LIQUID IMMERSION SCANNING EXPOSURE SYSTEM USING AN IMMERSION LIQUID CONFINED WITHIN A LENS HOOD 有权
标题翻译：液体渗透扫描曝光系统使用在镜头内部配置的液体液体
公开(公告)号：US20110157567A1
公开(公告)日：2011-06-30
申请号：US12649212
申请日：2009-12-29
申请人： Wenzhan Zhou , Sia Kim Tan , Lei Yuan , Meisheng Zhou
发明人： Wenzhan Zhou , Sia Kim Tan , Lei Yuan , Meisheng Zhou
IPC分类号： G03B27/52
CPC分类号： G03F7/70341
摘要： A liquid immersion scanning exposure system utilizes an immersion liquid confined within a watertight lens hood having a base portion formed from a solid optical element. During operation, a bottom portion of a lens assembly is disposed within the immersion liquid and the solid optical element is placed upon a photoresist material or layer (to be patterned). The lens assembly moves laterally through the immersion liquid parallel to the photoresist material. Because the solid optical element separates the immersion liquid from the photoresist material and does not move relative to the photoresist material, the photoresist material does not contact with the immersion liquid and the solid optical element and is not susceptible to damage or scratching by the solid optical element.
摘要翻译：液浸式扫描曝光系统利用限制在具有由固体光学元件形成的基部的防水透镜罩内的浸液。在操作期间，透镜组件的底部设置在浸没液体内，并且固体光学元件被放置在光致抗蚀剂材料或层（待图案化）上。透镜组件横向移动通过平行于光致抗蚀剂材料的浸没液体。由于固体光学元件将浸没液体与光致抗蚀剂材料分离并且不相对于光致抗蚀剂材料移动，所以光致抗蚀剂材料不与浸没液体和固体光学元件接触，并且不易受固体光学元件的损坏或划伤元件。

5. 发明授权

US08572524B2 Statistical optical proximity correction 有权
标题翻译：统计光学邻近校正
公开(公告)号：US08572524B2
公开(公告)日：2013-10-29
申请号：US11943591
申请日：2007-11-21
申请人： Wenzhan Zhou , Liang Choo Hsia , Meisheng Zhou , Zheng Zou
发明人： Wenzhan Zhou , Liang Choo Hsia , Meisheng Zhou , Zheng Zou
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： An optical proximity correction (OPC) model incorporates inline process variation data. OPC is performed by adjusting an input mask pattern with a mask bias derived from the OPC model to correct errors in the input mask pattern.
摘要翻译：光学邻近校正（OPC）模型包含在线过程变化数据。通过使用从OPC模型导出的掩模偏差调整输入掩模图案来校正输入掩模图案中的错误来执行OPC。

6. 发明授权

US08896810B2 Liquid immersion scanning exposure system using an immersion liquid confined within a lens hood 有权
标题翻译：液体浸渍扫描曝光系统使用限制在透镜罩内的浸液
公开(公告)号：US08896810B2
公开(公告)日：2014-11-25
申请号：US12649212
申请日：2009-12-29
申请人： Wenzhan Zhou , Sia Kim Tan , Lei Yuan , Meisheng Zhou
发明人： Wenzhan Zhou , Sia Kim Tan , Lei Yuan , Meisheng Zhou
IPC分类号： G03B27/42
CPC分类号： G03F7/70341
摘要： A liquid immersion scanning exposure system utilizes an immersion liquid confined within a watertight lens hood having a base portion formed from a solid optical element. During operation, a bottom portion of a lens assembly is disposed within the immersion liquid and the solid optical element is placed upon a photoresist material or layer (to be patterned). The lens assembly moves laterally through the immersion liquid parallel to the photoresist material. Because the solid optical element separates the immersion liquid from the photoresist material and does not move relative to the photoresist material, the photoresist material does not contact with the immersion liquid and the solid optical element and is not susceptible to damage or scratching by the solid optical element.
摘要翻译：液浸式扫描曝光系统利用限制在具有由固体光学元件形成的基部的防水透镜罩内的浸液。在操作期间，透镜组件的底部设置在浸没液体内，并且固体光学元件被放置在光致抗蚀剂材料或层（待图案化）上。透镜组件横向移动通过平行于光致抗蚀剂材料的浸没液体。由于固体光学元件将浸没液体与光致抗蚀剂材料分离并且不相对于光致抗蚀剂材料移动，所以光致抗蚀剂材料不与浸没液体和固体光学元件接触，并且不易受固体光学元件的损坏或划伤元件。

7. 发明授权

US08912102B2 Laser annealing 有权
标题翻译：激光退火
公开(公告)号：US08912102B2
公开(公告)日：2014-12-16
申请号：US12396441
申请日：2009-03-02
申请人： Chyiu Hyia Poon , Alex K H See , Meisheng Zhou
发明人： Chyiu Hyia Poon , Alex K H See , Meisheng Zhou
IPC分类号： H01L21/00 , H01L21/268 , H01L21/324
CPC分类号： H01L21/268 , H01L21/324
摘要： A system for and method of processing an article such as a semiconductor wafer is disclosed. The wafer includes first and second surfaces which are segmented into a plurality of first and second zones. The first surface of the wafer, for example, on which devices or ICs are formed is processed by, for example, laser annealing while the second surface is heated with a backside heating source. Corresponding, or at least substantially corresponding, zones on the first and second surfaces are processed synchronously to reduce variations of post laser anneal thermal budget across the wafer.
摘要翻译：公开了一种用于处理诸如半导体晶片的物品的系统和方法。晶片包括被分段成多个第一和第二区域的第一和第二表面。例如通过激光退火处理例如在其上形成有器件或IC的晶片的第一表面，同时用背面加热源加热第二表面。在第一和第二表面上相应或至少基本对应的区域被同步地处理，以减少晶片上后激光退火热预算的变化。

8. 发明授权

US07928020B2 Method of fabricating a nitrogenated silicon oxide layer and MOS device having same 有权
标题翻译：制造氮化硅氧化物层的方法和具有其的MOS器件
公开(公告)号：US07928020B2
公开(公告)日：2011-04-19
申请号：US11862865
申请日：2007-09-27
申请人： Jinping Liu , Ben Ong , Zhengquan Zhang , Jae Gon Lee , Lydia Wong , Bin Yang , K. H. Alex See , Meisheng Zhou , Liang Choo Hsia
发明人： Jinping Liu , Ben Ong , Zhengquan Zhang , Jae Gon Lee , Lydia Wong , Bin Yang , K. H. Alex See , Meisheng Zhou , Liang Choo Hsia
IPC分类号： H01L21/00
CPC分类号： H01L21/3143 , H01L21/0214 , H01L21/02332 , H01L21/28202 , H01L21/31155 , H01L29/513 , H01L29/518
摘要： A method for fabricating a nitrogen-containing dielectric layer and semiconductor device including the dielectric layer in which a silicon oxide layer is formed on a substrate, such that an interface region resides adjacent to substrate and a surface region resides opposite the interface region. Nitrogen is introduced into the silicon oxide layer by applying a nitrogen plasma. After applying nitrogen plasma, the silicon oxide layer is annealed. The processes of introducing nitrogen into the silicon oxide layer and annealing the silicon oxide layer are repeated to create a bi-modal nitrogen concentration profile in the silicon oxide layer. In the silicon oxide layer, the peak nitrogen concentrations are situated away from the interface region and at least one of the peak nitrogen concentrations is situated in proximity to the surface region. A method for fabricating a semiconductor device is incorporating the nitrogen-containing silicon oxide layers also disclosed.
摘要翻译：一种含氮介电层的制造方法和包括在基板上形成氧化硅层的电介质层的半导体器件，使得界面区域与基板相邻，表面区域与界面区域相对。通过施加氮等离子体将氮引入到氧化硅层中。在施加氮等离子体之后，将氧化硅层退火。重复将氧气引入氧化硅层并退火氧化硅层的过程，以在氧化硅层中产生双峰氮浓度分布。在氧化硅层中，峰值氮浓度远离界面区域，并且峰值氮浓度中的至少一个位于表面区域附近。还公开了一种制造半导体器件的方法，其中还包括含氮氧化硅层。

9. 发明申请

US20070066047A1 METHOD OF FORMING OPENING AND CONTACT 审中-公开
标题翻译：形成开放和接触的方法
公开(公告)号：US20070066047A1
公开(公告)日：2007-03-22
申请号：US11162647
申请日：2005-09-18
申请人： Jianhui Ye , Kai Hung Alex See , Tien-Cheng Lan , Meisheng Zhou
发明人： Jianhui Ye , Kai Hung Alex See , Tien-Cheng Lan , Meisheng Zhou
IPC分类号： H01L21/4763 , H01L21/302
CPC分类号： H01L21/31144 , H01L21/76816 , H01L21/76895 , H01L21/76897 , H01L23/485 , H01L2924/0002 , H01L2924/00
摘要： A method for forming an opening on a material layer is provided. First, a dielectric layer is formed on the material layer. Then, a metallic hard mask layer and a cap layer are sequentially formed on the dielectric layer. Thereafter, a patterned photoresist layer is formed on the cap layer. The patterned photoresist layer exposes a portion of the surface of the cap layer. After that, a first etching operation is carried out using the patterned photoresist layer as a mask to remove a portion of the cap layer and the metallic hard mask layer until the surface of the dielectric layer is exposed. Then, the photoresist layer is removed. A second etching operation is carried out using the cap layer and the metallic hard mask layer as a mask to remove a portion of the dielectric layer and form an opening.
摘要翻译：提供了在材料层上形成开口的方法。首先，在材料层上形成电介质层。然后，在电介质层上依次形成金属硬掩模层和盖层。此后，在盖层上形成图案化的光致抗蚀剂层。图案化的光致抗蚀剂层暴露盖层表面的一部分。之后，使用图案化的光致抗蚀剂层作为掩模进行第一蚀刻操作，以除去覆盖层和金属硬掩模层的一部分，直到暴露介电层的表面。然后，除去光致抗蚀剂层。使用盖层和金属硬掩模层作为掩模进行第二蚀刻操作，以去除电介质层的一部分并形成开口。

10. 发明申请

US20130140576A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130140576A1
公开(公告)日：2013-06-06
申请号：US13369782
申请日：2012-02-09
申请人： FUMITAKE MIENO , Meisheng Zhou
发明人： FUMITAKE MIENO , Meisheng Zhou
IPC分类号： H01L29/78 , H01L21/36 , H01L21/336
CPC分类号： H01L29/78 , H01L29/1083 , H01L29/66636
摘要： A semiconductor device, and a method for manufacturing the same, comprises a source/drain region formed using a solid phase epitaxy (SPE) process to provide partially isolated source/drain transistors. Amorphous semiconductor material at the source/drain region is crystallized and then shrunk through annealing, to apply tensile stress in the channel direction.
摘要翻译：半导体器件及其制造方法包括使用固相外延（SPE）工艺形成的源极/漏极区域，以提供部分隔离的源极/漏极晶体管。源极/漏极区域的非晶半导体材料结晶，然后通过退火而收缩，以在沟道方向施加拉伸应力。

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