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1. 发明申请

US20070066047A1 METHOD OF FORMING OPENING AND CONTACT 审中-公开
标题翻译：形成开放和接触的方法
公开(公告)号：US20070066047A1
公开(公告)日：2007-03-22
申请号：US11162647
申请日：2005-09-18
申请人： Jianhui Ye , Kai Hung Alex See , Tien-Cheng Lan , Meisheng Zhou
发明人： Jianhui Ye , Kai Hung Alex See , Tien-Cheng Lan , Meisheng Zhou
IPC分类号： H01L21/4763 , H01L21/302
CPC分类号： H01L21/31144 , H01L21/76816 , H01L21/76895 , H01L21/76897 , H01L23/485 , H01L2924/0002 , H01L2924/00
摘要： A method for forming an opening on a material layer is provided. First, a dielectric layer is formed on the material layer. Then, a metallic hard mask layer and a cap layer are sequentially formed on the dielectric layer. Thereafter, a patterned photoresist layer is formed on the cap layer. The patterned photoresist layer exposes a portion of the surface of the cap layer. After that, a first etching operation is carried out using the patterned photoresist layer as a mask to remove a portion of the cap layer and the metallic hard mask layer until the surface of the dielectric layer is exposed. Then, the photoresist layer is removed. A second etching operation is carried out using the cap layer and the metallic hard mask layer as a mask to remove a portion of the dielectric layer and form an opening.
摘要翻译：提供了在材料层上形成开口的方法。首先，在材料层上形成电介质层。然后，在电介质层上依次形成金属硬掩模层和盖层。此后，在盖层上形成图案化的光致抗蚀剂层。图案化的光致抗蚀剂层暴露盖层表面的一部分。之后，使用图案化的光致抗蚀剂层作为掩模进行第一蚀刻操作，以除去覆盖层和金属硬掩模层的一部分，直到暴露介电层的表面。然后，除去光致抗蚀剂层。使用盖层和金属硬掩模层作为掩模进行第二蚀刻操作，以去除电介质层的一部分并形成开口。

2. 发明授权

US08354347B2 Method of forming high-k dielectric stop layer for contact hole opening 有权
公开(公告)号：US08354347B2
公开(公告)日：2013-01-15
申请号：US11953881
申请日：2007-12-11
申请人： Jianhui Ye , Huang Liu , Alex K H See , Wei Lu , Chun Hui Low , Chim Seng Seet , Mei Sheng Zhou , Liang Choo Hsia
发明人： Jianhui Ye , Huang Liu , Alex K H See , Wei Lu , Chun Hui Low , Chim Seng Seet , Mei Sheng Zhou , Liang Choo Hsia
IPC分类号： H01L21/461
CPC分类号： H01L21/76832 , H01L21/76895 , H01L21/76897
摘要： A composite etch stop layer which comprises primary and secondary stop layers is used to form contacts in a dielectric layer to contact regions in a substrate. The secondary etch stop layer includes a high-k dielectric material to achieve high etch selectivity with the dielectric layer during contact formation. The secondary stop layer is removed to expose the contact regions. Removal of the secondary stop layer is achieved with high selectivity to the materials therebelow.

3. 发明授权

US06638365B2 Method for obtaining clean silicon surfaces for semiconductor manufacturing 有权
标题翻译：用于获得半导体制造的清洁硅表面的方法
公开(公告)号：US06638365B2
公开(公告)日：2003-10-28
申请号：US09972504
申请日：2001-10-09
申请人： Jianhui Ye , Simon Chooi , Alex See
发明人： Jianhui Ye , Simon Chooi , Alex See
IPC分类号： B08B300
CPC分类号： H01L21/02052 , C11D7/08 , C11D7/10 , C11D11/0047 , Y10S134/902
摘要： A method of preparing a silicon surface for a subsequent processing said such as thermal oxidation, or metal silicide formation, via use of a novel wet chemical clean procedure, has been developed. The novel wet chemical clean procedure is comprised of three specific stages, with the first stage featuring the removal of organic contaminants and the growth of a native oxide layer on the silicon surface. A second stage features removal of the native oxide layer and removal of metallic contaminants from the silicon surface, while the third stage is used to dry the silicon surface. The novel wet chemical clean procedure is performed in less time, and using less chemicals, then counterpart wet chemical cleans also used for the preparation of silicon surfaces for subsequent processing steps.
摘要翻译：已经开发了通过使用新的湿化学清洁程序来制备用于后续处理的硅表面的方法，例如热氧化或金属硅化物形成。新型湿化学清洁程序由三个特定阶段组成，第一阶段的特征在于去除有机污染物和硅表面上的自然氧化物层的生长。第二阶段特征在于去除天然氧化物层并从硅表面去除金属污染物，而第三阶段用于干燥硅表面。新的湿化学清洁程序在较短的时间内进行，使用较少的化学品，然后对应的湿化学清洗也用于制备硅表面用于后续处理步骤。

4. 发明授权

US6063547A Physical vapor deposition poly-p-phenylene sulfide film as a bottom anti-reflective coating on polysilicon 失效
标题翻译：物理气相沉积聚对苯硫醚膜作为多晶硅上的底部抗反射涂层
公开(公告)号：US6063547A
公开(公告)日：2000-05-16
申请号：US94464
申请日：1998-06-11
申请人： Jianhui Ye , Mei Sheng Zhou
发明人： Jianhui Ye , Mei Sheng Zhou
IPC分类号： G03F7/09 , H01L21/027 , H01L21/3213 , G03F7/26
CPC分类号： G03F7/091 , H01L21/0276 , H01L21/32139 , H01L21/32137 , Y10S430/151
摘要： A method of patterning conductive lines using a bottom anti-reflective coating (BARC) composed of Poly-p-phenylene sulfide (PPS) film 30 formed using a Physical Vapor Deposition (PVD) process. The PPS BARC 30 is easy to remove and has superior planarization. The method comprises:a) forming conductive layer 26 over a semiconductor structure 10;b) forming a Poly-p-phenylene sulfide (PPS) layer 30 over said conductive layer using a Physical Vapor Deposition (PVD) process;c) forming a photoresist pattern 34 over said Poly-p-phenylene sulfide (PPS) layer 30; said Poly-p-phenylene sulfide (PPS) layer acting as a bottom Anti-reflective coating (BARC);d) etching said conductive layer 26 using said photoresist pattern 34 and as a mask forming a conductive pattern;e) removing said photoresist pattern 34;f) removing said Poly-p-phenylene sulfide (PPS) layer by heating and vaporizing said Poly-p-phenylene sulfide (PPS) layer.
摘要翻译：使用由使用物理气相沉积（PVD）工艺形成的聚对苯硫醚（PPS）膜30组成的底部抗反射涂层（BARC）来图案化导电线的方法。 PPS BARC 30易于去除并具有优异的平面化。该方法包括：a）在半导体结构10上形成导电层26; b）使用物理气相沉积（PVD）工艺在所述导电层上形成聚对苯硫醚（PPS）层30; c）在所述聚对苯硫醚（PPS）层30上形成光致抗蚀剂图案34; 所述作为底部抗反射涂层（BARC）的聚对苯硫醚（PPS）层; d）使用所述光致抗蚀剂图案34和形成导电图案的掩模蚀刻所述导电层26; e）去除所述光致抗蚀剂图案34; f）通过加热和蒸发所述聚对苯硫醚（PPS）层来除去所述聚对苯硫醚（PPS）层。

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