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1. 发明授权

US06937448B2 Spin valve having copper oxide spacer layer with specified coupling field strength between multi-layer free and pinned layer structures 失效
标题翻译：旋转阀具有在多层自由和固定层结构之间具有规定的耦合场强的氧化铜隔离层
公开(公告)号：US06937448B2
公开(公告)日：2005-08-30
申请号：US10294109
申请日：2002-11-13
申请人： Wen-Yaung Lee , Tsann Lin , Danielle Mauri , Alexander Michael Zeltser
发明人： Wen-Yaung Lee , Tsann Lin , Danielle Mauri , Alexander Michael Zeltser
IPC分类号： G11B5/012 , G11B5/31 , G11B5/39 , H01L43/08 , H01L43/10 , H01L43/12
CPC分类号： B82Y10/00 , G11B5/012 , G11B5/3143 , G11B5/3163 , G11B5/3903 , Y10T29/49021 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49048
摘要： A magnetic head including a spin valve sensor having a sensor layer stack that includes a pinned magnetic layer, a spacer layer formed on the pinned magnetic layer, and a free magnetic layer formed on the spacer layer. In a preferred embodiment the spacer layer is comprised of CuOx. Plasma smoothing of the upper surface of the pinned magnetic layer is conducted prior to depositing the spacer layer, and a preferred plasma gas is a mixture of argon and oxygen.
摘要翻译：一种磁头，包括具有传感器层堆叠的自旋阀传感器，所述传感器层堆叠包括被钉扎的磁性层，形成在钉扎的磁性层上的间隔层和形成在间隔层上的自由磁性层。在一个优选的实施方案中，间隔层由CuO x X组成。在沉积间隔层之前进行钉扎磁性层的上表面的等离子体平滑化，优选的等离子体气体是氩和氧的混合物。

2. 发明授权

US07650684B2 Method for fabricating a magnetic head including a read sensor 失效
标题翻译：一种用于制造包括读取传感器的磁头的方法
公开(公告)号：US07650684B2
公开(公告)日：2010-01-26
申请号：US10892581
申请日：2004-07-16
申请人： Wen-Yaung Lee , Tsann Lin , Danielle Mauri , Alexander Michael Zeltser
发明人： Wen-Yaung Lee , Tsann Lin , Danielle Mauri , Alexander Michael Zeltser
IPC分类号： G11B5/127 , G11B5/33 , C23C16/00
CPC分类号： B82Y10/00 , G11B5/012 , G11B5/3143 , G11B5/3163 , G11B5/3903 , Y10T29/49021 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49048
摘要： A method for fabricating a magnetic head including a spin valve sensor having a sensor layer stack that includes a pinned magnetic layer, a spacer layer formed on the pinned magnetic layer, and a free magnetic layer formed on the spacer layer. In a preferred embodiment the spacer layer is comprised of CuOx. The method includes the plasma smoothing of the upper surface of the pinned magnetic layer prior to depositing the spacer layer, and a preferred plasma gas is a mixture of argon and oxygen.
摘要翻译：一种用于制造磁头的方法，该磁头包括具有传感器层堆叠的自旋阀传感器，所述传感器层堆叠包括钉扎磁性层，形成在钉扎磁性层上的间隔层和形成在间隔层上的自由磁性层。在优选实施例中，间隔层由CuOx构成。该方法包括在沉积间隔层之前对被钉扎的磁性层的上表面的等离子体平滑化，优选的等离子体气体是氩和氧的混合物。

3. 发明授权

US06785099B2 Read gap improvements through high resistance magnetic shield layers 失效
标题翻译：通过高电阻磁屏蔽层读取间隙改进
公开(公告)号：US06785099B2
公开(公告)日：2004-08-31
申请号：US10068231
申请日：2002-02-04
申请人： Wen-Yaung Lee , Tsann Lin , Daniele Mauri
发明人： Wen-Yaung Lee , Tsann Lin , Daniele Mauri
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/09 , G11B5/3143 , G11B5/3146 , G11B5/332 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996
摘要： A read head is provided having having ultrathin read gap layers with improved insulative properties between a magnetoresistive sensor and ferromagnetic shield layers. The read head comprises a magnetoresistive sensor with first and second shield cap layers made of high resistivity permeable magnetic material formed between the first and second ferromagnetic shields and the first and second insulative read gap layers, respectively. The shield cap layers made of Fe—Hf—Ox material, or alternatively, the Mn—Zn ferrite material provide highly resistive or insulating soft ferromagnetic layers which add to the electrically insulative read gap layers to provide increased electrical insulation of the spin valve sensor from the metallic ferromagnetic shields while not adding to the magnetic read gap of the read head. The extra insulation provided by the highly resistive shield cap layers makes it possible to use ultrathin insulative first and second read gap layers without increased risk of electrical shorting between the spin valve sensor and the ferromagnetic first and second shields.
摘要翻译：提供读头，其具有在磁阻传感器和铁磁屏蔽层之间具有改进的绝缘性能的超薄读取间隙层。读头包括磁阻传感器，其具有由分别形成在第一和第二铁磁屏蔽之间的高电阻率可渗透磁性材料制成的第一和第二屏蔽盖层以及第一和第二绝缘读取间隙层。由Fe-Hf-Ox材料制成的屏蔽帽层，或者Mn-Zn铁氧体材料提供高电阻或绝缘的软铁磁层，这些层叠电绝缘读取间隙层以提供自旋阀传感器的增加的电绝缘金属铁磁屏蔽，同时不增加读头的磁读取间隙。由高电阻屏蔽盖层提供的额外的绝缘使得可以使用超薄绝缘的第一和第二读取间隙层，而不增加自旋阀传感器和铁磁性第一和第二屏蔽之间的电短路的风险。

4. 发明申请

US20050190509A1 Self-pinned spin valve sensor with stress modification layers for reducing the likelihood of amplitude flip 有权
标题翻译：自锁式自旋阀传感器，具有应力改性层，用于降低幅度翻转的可能性
公开(公告)号：US20050190509A1
公开(公告)日：2005-09-01
申请号：US10788727
申请日：2004-02-27
申请人： Ciaran Fox , Hardayal Gill , Prakash Kasiraj , Wen-Yaung Lee , Mustafa Pinarbasi
发明人： Ciaran Fox , Hardayal Gill , Prakash Kasiraj , Wen-Yaung Lee , Mustafa Pinarbasi
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/33 , G11B5/1272
摘要： A spin valve (SV) sensor of the self-pinned type includes one or more compressive stress modification layers for reducing the likelihood that the pinning field will flip its direction. The spin valve sensor includes a capping layer formed over a spin valve structure which includes a free layer, an antiparallel (AP) self-pinned layer structure, and a spacer layer in between the free layer and the AP self-pinned layer structure. A compressive stress modification layer is formed above or below the capping layer, adjacent the AP self-pinned layer structure, or both. Preferably, the compressive stress modification layer is made of ruthenium (Ru) or other suitable material.
摘要翻译：自固定型的自旋阀（SV）传感器包括一个或多个压缩应力修改层，用于降低钉扎场将翻转其方向的可能性。自旋阀传感器包括形成在自旋阀结构上的覆盖层，其包括自由层，反平行（AP）自固定层结构以及位于自由层和AP自固位层结构之间的间隔层。在封盖层的上方或下方形成压应力改性层，邻近AP自固化层结构或两者。优选地，压应力改性层由钌（Ru）或其它合适的材料制成。

5. 发明申请

US20080285182A1 ENHANCED ANTI-PARALLEL-PINNED SENSOR USING THIN RUTHENIUM SPACER AND HIGH MAGNETIC FIELD ANNEALING 有权
标题翻译：使用薄型间隔器和高磁场退火的增强型抗并联型传感器
公开(公告)号：US20080285182A1
公开(公告)日：2008-11-20
申请号：US12172134
申请日：2008-07-11
申请人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Koichi Nishioka , Yasunari Tajima
发明人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Koichi Nishioka , Yasunari Tajima
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3929 , H01L43/12 , Y10T428/1121
摘要： An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably between 0.1 and 0.6 nm. The spacer is also annealed in a magnetic field that is 1.5 Tesla or higher, and preferably greater than 5 Tesla. This design yields unexpected results by more than tripling the pinning field over that of typical AP-pinned GMR and TMR sensors that utilize ruthenium spacers which are 0.8 nm thick and annealed in a relatively low magnetic field of approximately 1.3 Tesla.
摘要翻译：反平行销钉式传感器设置有增加传感器的反平行耦合强度的间隔件。反平行钉扎传感器是具有纯钌或钌合金间隔物的GMR或TMR传感器。间隔物的厚度小于0.8nm，优选在0.1和0.6nm之间。间隔物也在1.5特斯拉或更高，优选大于5特斯拉的磁场中退火。该设计通过将钉扎场超过使用0.8nm厚的钌间隔物并且在约1.3特斯拉的相对低的磁场中退火的典型AP钉扎GMR和TMR传感器的三倍以上而产生意想不到的结果。

6. 发明授权

US07196878B2 Self-pinned spin valve sensor with stress modification layers for reducing the likelihood of amplitude flip 有权
标题翻译：自锁式自旋阀传感器，具有应力改性层，用于降低幅度翻转的可能性
公开(公告)号：US07196878B2
公开(公告)日：2007-03-27
申请号：US10788727
申请日：2004-02-27
申请人： Ciaran Avram Fox , Hardayal Singh Gill , Prakash Kasiraj , Wen-Yaung Lee , Mustafa Michael Pinarbasi
发明人： Ciaran Avram Fox , Hardayal Singh Gill , Prakash Kasiraj , Wen-Yaung Lee , Mustafa Michael Pinarbasi
IPC分类号： G11B5/39
CPC分类号： G11B5/33 , G11B5/1272
摘要： A spin valve (SV) sensor of the self-pinned type includes one or more compressive stress modification layers for reducing the likelihood that the pinning field will flip its direction. The spin valve sensor includes a capping layer formed over a spin valve structure which includes a free layer, an antiparallel (AP) self-pinned layer structure, and a spacer layer in between the free layer and the AP self-pinned layer structure. A compressive stress modification layer is formed above or below the capping layer, adjacent the AP self-pinned layer structure, or both. Preferably, the compressive stress modification layer is made of ruthenium (Ru) or other suitable material.
摘要翻译：自固定型的自旋阀（SV）传感器包括一个或多个压缩应力修改层，用于降低钉扎场将翻转其方向的可能性。自旋阀传感器包括形成在自旋阀结构上的覆盖层，其包括自由层，反平行（AP）自固定层结构以及位于自由层和AP自固位层结构之间的间隔层。在封盖层的上方或下方形成压应力改性层，邻近AP自固化层结构或两者。优选地，压应力改性层由钌（Ru）或其它合适的材料制成。

7. 发明授权

US07848064B2 Enhanced anti-parallel-pinned sensor using thin ruthenium spacer and high magnetic field annealing 有权
标题翻译：增强型反并联固定传感器采用薄钌间隔和高磁场退火
公开(公告)号：US07848064B2
公开(公告)日：2010-12-07
申请号：US12172134
申请日：2008-07-11
申请人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Koichi Nishioka , Yasunari Tajima
发明人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Koichi Nishioka , Yasunari Tajima
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3929 , H01L43/12 , Y10T428/1121
摘要： An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably between 0.1 and 0.6 nm. The spacer is also annealed in a magnetic field that is 1.5 Tesla or higher, and preferably greater than 5 Tesla. This design yields unexpected results by more than tripling the pinning field over that of typical AP-pinned GMR and TMR sensors that utilize ruthenium spacers which are 0.8 nm thick and annealed in a relatively low magnetic field of approximately 1.3 Tesla.
摘要翻译：反平行销钉式传感器设置有增加传感器的反平行耦合强度的间隔件。反平行钉扎传感器是具有纯钌或钌合金间隔物的GMR或TMR传感器。间隔物的厚度小于0.8nm，优选在0.1和0.6nm之间。间隔物也在1.5特斯拉或更高，优选大于5特斯拉的磁场中退火。该设计通过将钉扎场超过使用0.8nm厚的钌间隔物并且在约1.3特斯拉的相对低的磁场中退火的典型AP钉扎GMR和TMR传感器的三倍以上而产生意想不到的结果。

8. 发明授权

US07408747B2 Enhanced anti-parallel-pinned sensor using thin ruthenium spacer and high magnetic field annealing 失效
标题翻译：增强型反并联固定传感器采用薄钌间隔和高磁场退火
公开(公告)号：US07408747B2
公开(公告)日：2008-08-05
申请号：US11048406
申请日：2005-02-01
申请人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Koichi Nishioka , Yasunari Tajima
发明人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Koichi Nishioka , Yasunari Tajima
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3929 , H01L43/12 , Y10T428/1121
摘要： An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably between 0.1 and 0.6 nm. The spacer is also annealed in a magnetic field that is 1.5 Tesla or higher, and preferably greater than 5 Tesla. This design yields unexpected results by more than tripling the pinning field over that of typical AP-pinned GMR and TMR sensors that utilize ruthenium spacers which are 0.8 nm thick and annealed in a relatively low magnetic field of approximately 1.3 Tesla.
摘要翻译：反平行销钉式传感器设置有增加传感器的反平行耦合强度的间隔件。反平行钉扎传感器是具有纯钌或钌合金间隔物的GMR或TMR传感器。间隔物的厚度小于0.8nm，优选在0.1和0.6nm之间。间隔物也在1.5特斯拉或更高，优选大于5特斯拉的磁场中退火。该设计通过将钉扎场超过使用0.8nm厚的钌间隔物并且在约1.3特斯拉的相对低的磁场中退火的典型AP钉扎GMR和TMR传感器的三倍以上而产生意想不到的结果。

9. 发明申请

US20080137236A1 Magnetic read head having increased electron exchange 失效
标题翻译：磁读头具有增加的电子交换
公开(公告)号：US20080137236A1
公开(公告)日：2008-06-12
申请号：US11638271
申请日：2006-12-12
申请人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Brian R. York
发明人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Brian R. York
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , G11B5/3163
摘要： A magnetic head of either CIP or CPP configuration is disclosed, having a read sensor with a strongly pinned ferromagnetic layer due to increased electronic exchange with the AFM layer. The read sensor includes a lower seed layer whose material is chosen from a group consisting of Ta, NiFeCr, NiFeCoCr, NiFe, Cu, Ta/NiFeCr, Ta/NiFeCr/NiFe, Ta/Ru and Ta/NiFeCoCr, and an upper seed layer where the upper seed layer material is chosen from a group consisting of Ru, Cu, NiFe, Cu(x)Au(1-x)(x=0.22-0.5) alloys, Ru(x)Cr(1-x)(x=0.1-0.5) alloys, NiFeCr and NiFeCoCr. An AFM layer is formed on the upper seed layer and a ferromagnetic pinned layer is formed on the AFM layer. The exchange coupling energy Jk between the AFM layer and pinned layers exceeds 1.3 erg/cm2. Also disclosed is a method of fabrication of a magnetic head including a read head sensor with a strongly pinned ferromagnetic layer due to increased electronic exchange.
摘要翻译：公开了CIP或CPP配置的磁头，其具有由于与AFM层的电子交换增加而具有强固定的铁磁层的读取传感器。读取传感器包括下部种子层，其材料选自由Ta，NiFeCr，NiFeCoCr，NiFe，Cu，Ta / NiFeCr，Ta / NiFeCr / NiFe，Ta / Ru和Ta / NiFeCoCr组成的组，以及上部种子层其中上部种子层材料选自Ru，Cu，NiFe，Cu（x）Au（1-x）（x = 0.22-0.5）合金，Ru（x）Cr（1-x）（x = 0.1-0.5）合金，NiFeCr和NiFeCoCr。在上种籽层上形成AFM层，在AFM层上形成铁磁性钉扎层。 AFM层和钉扎层之间的交换耦合能量Jk超过1.3erg / cm2。还公开了一种由于增加的电子交换而制造包括具有强固定铁磁层的读头传感器的磁头的方法。

10. 发明申请

US20060171083A1 Enhanced anti-parallel-pinned sensor using thin ruthenium spacer and high magnetic field annealing 失效
标题翻译：增强型反并联固定传感器采用薄钌间隔和高磁场退火
公开(公告)号：US20060171083A1
公开(公告)日：2006-08-03
申请号：US11048406
申请日：2005-02-01
申请人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Koichi Nishioka , Yasunari Tajima
发明人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Koichi Nishioka , Yasunari Tajima
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3929 , H01L43/12 , Y10T428/1121
摘要： An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably between 0.1 and 0.6 nm. The spacer is also annealed in a magnetic field that is 1.5 Tesla or higher, and preferably greater than 5 Tesla. This design yields unexpected results by more than tripling the pinning field over that of typical AP-pinned GMR and TMR sensors that utilize ruthenium spacers which are 0.8 nm thick and annealed in a relatively low magnetic field of approximately 1.3 Tesla.
摘要翻译：反平行销钉式传感器设置有增加传感器的反平行耦合强度的间隔件。反平行钉扎传感器是具有纯钌或钌合金间隔物的GMR或TMR传感器。间隔物的厚度小于0.8nm，优选在0.1和0.6nm之间。间隔物也在1.5特斯拉或更高，优选大于5特斯拉的磁场中退火。该设计通过将钉扎场超过使用0.8nm厚的钌间隔物并且在约1.3特斯拉的相对低的磁场中退火的典型AP钉扎GMR和TMR传感器的三倍以上而产生意想不到的结果。

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