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1. 发明授权

US07675717B2 Magnetic read head having increased electron exchange 失效
标题翻译：磁读头具有增加的电子交换
公开(公告)号：US07675717B2
公开(公告)日：2010-03-09
申请号：US11638271
申请日：2006-12-12
申请人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Brian R. York
发明人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Brian R. York
IPC分类号： G11B5/33
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , G11B5/3163
摘要： A magnetic head of either CIP or CPP configuration is disclosed, having a read sensor with a strongly pinned ferromagnetic layer due to increased electronic exchange with the AFM layer. The read sensor includes a lower seed layer whose material is chosen from a group consisting of Ta, NiFeCr, NiFeCoCr, NiFe, Cu, Ta/NiFeCr, Ta/NiFeCr/NiFe, Ta/Ru and Ta/NiFeCoCr, and an upper seed layer where the upper seed layer material is chosen from a group consisting of Ru, Cu, NiFe, Cu(x)Au(1−x)(x=0.22-0.5) alloys, Ru(x)Cr(1−x)(x=0.1-0.5) alloys, NiFeCr and NiFeCoCr. An AFM layer is formed on the upper seed layer and a ferromagnetic pinned layer is formed on the AFM layer. The exchange coupling energy Jk between the AFM layer and pinned layers exceeds 1.3 erg/cm2. Also disclosed is a method of fabrication of a magnetic head including a read head sensor with a strongly pinned ferromagnetic layer due to increased electronic exchange.
摘要翻译：公开了CIP或CPP配置的磁头，其具有由于与AFM层的电子交换增加而具有强固定的铁磁层的读取传感器。读取传感器包括下部种子层，其材料选自由Ta，NiFeCr，NiFeCoCr，NiFe，Cu，Ta / NiFeCr，Ta / NiFeCr / NiFe，Ta / Ru和Ta / NiFeCoCr组成的组，以及上层晶种层其中上部种子层材料选自Ru，Cu，NiFe，Cu（x）Au（1-x）（x = 0.22-0.5）合金，Ru（x）Cr（1-x）（x = 0.1-0.5）合金，NiFeCr和NiFeCoCr。在上种籽层上形成AFM层，在AFM层上形成铁磁性钉扎层。 AFM层和钉扎层之间的交换耦合能量Jk超过1.3erg / cm2。还公开了一种由于增加的电子交换而制造包括具有强固定铁磁层的读头传感器的磁头的方法。

2. 发明申请

US20080137236A1 Magnetic read head having increased electron exchange 失效
标题翻译：磁读头具有增加的电子交换
公开(公告)号：US20080137236A1
公开(公告)日：2008-06-12
申请号：US11638271
申请日：2006-12-12
申请人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Brian R. York
发明人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Brian R. York
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , G11B5/3163
摘要： A magnetic head of either CIP or CPP configuration is disclosed, having a read sensor with a strongly pinned ferromagnetic layer due to increased electronic exchange with the AFM layer. The read sensor includes a lower seed layer whose material is chosen from a group consisting of Ta, NiFeCr, NiFeCoCr, NiFe, Cu, Ta/NiFeCr, Ta/NiFeCr/NiFe, Ta/Ru and Ta/NiFeCoCr, and an upper seed layer where the upper seed layer material is chosen from a group consisting of Ru, Cu, NiFe, Cu(x)Au(1-x)(x=0.22-0.5) alloys, Ru(x)Cr(1-x)(x=0.1-0.5) alloys, NiFeCr and NiFeCoCr. An AFM layer is formed on the upper seed layer and a ferromagnetic pinned layer is formed on the AFM layer. The exchange coupling energy Jk between the AFM layer and pinned layers exceeds 1.3 erg/cm2. Also disclosed is a method of fabrication of a magnetic head including a read head sensor with a strongly pinned ferromagnetic layer due to increased electronic exchange.
摘要翻译：公开了CIP或CPP配置的磁头，其具有由于与AFM层的电子交换增加而具有强固定的铁磁层的读取传感器。读取传感器包括下部种子层，其材料选自由Ta，NiFeCr，NiFeCoCr，NiFe，Cu，Ta / NiFeCr，Ta / NiFeCr / NiFe，Ta / Ru和Ta / NiFeCoCr组成的组，以及上部种子层其中上部种子层材料选自Ru，Cu，NiFe，Cu（x）Au（1-x）（x = 0.22-0.5）合金，Ru（x）Cr（1-x）（x = 0.1-0.5）合金，NiFeCr和NiFeCoCr。在上种籽层上形成AFM层，在AFM层上形成铁磁性钉扎层。 AFM层和钉扎层之间的交换耦合能量Jk超过1.3erg / cm2。还公开了一种由于增加的电子交换而制造包括具有强固定铁磁层的读头传感器的磁头的方法。

3. 发明授权

US07382590B2 MR sensor and thin film media having alloyed Ru antiparallel spacer layer for enhanced antiparallel exchange coupling 失效
标题翻译： MR传感器和薄膜介质具有合金化Ru反平行间隔层，用于增强反向平行交换耦合
公开(公告)号：US07382590B2
公开(公告)日：2008-06-03
申请号：US11047801
申请日：2005-01-31
申请人： Mary Frances Doerner , Eric Edward Fullerton , Wen-yaung Lee , Jinshan Li , Brian R. York
发明人： Mary Frances Doerner , Eric Edward Fullerton , Wen-yaung Lee , Jinshan Li , Brian R. York
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , G11B5/3909 , G11B2005/3996 , H01F10/3272
摘要： A magnetic head having a free layer and an antiparallel (AP) pinned layer structure spaced apart from the free layer. The AP pinned layer structure includes at least two pinned layers having magnetic moments that are self-pinned antiparallel to each other, the pinned layers being separated by an AP coupling layer constructed of a Ru alloy. The use of a Ru alloy coupling layer significantly increases the pinning field of the AP pinned layer structure over a pure Ru spacer.
摘要翻译：具有自由层和与自由层间隔开的反平行（AP）钉扎层结构的磁头。 AP钉扎层结构包括至少两个具有彼此自相互并联的磁矩的钉扎层，钉扎层由由Ru合金构成的AP耦合层分开。使用Ru合金耦合层显着增加了AP固定层结构在纯Ru间隔物上的钉扎场。

4. 发明授权

US07573685B2 GMR sensor having a capping layer treated with nitrogen for increased magnetoresistance 失效
标题翻译： GMR传感器具有用氮处理的覆盖层以增加磁阻
公开(公告)号：US07573685B2
公开(公告)日：2009-08-11
申请号：US11769533
申请日：2007-06-27
申请人： Wen-yaung Lee , Thomas E. Shatz , Dulip Ajantha Welipitiya , Brian R. York
发明人： Wen-yaung Lee , Thomas E. Shatz , Dulip Ajantha Welipitiya , Brian R. York
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B5/3909 , G11B2005/3996
摘要： A magnetoresistive sensor having a Ta cap layer with nitrogen added in situ during deposition. The nitrogen in the cap layer can be formed by depositing a Ta cap layer in a sputter deposition chamber having a small amount of nitrogen in an Ar atmosphere. The resulting nitrogenated cap layer exhibits reduced specular scattering, which results in improved magnetic performance of the magnetoresistive sensor.
摘要翻译：具有在沉积期间原位加氮的Ta盖层的磁阻传感器。盖层中的氮可以通过在Ar气氛中在具有少量氮的溅射沉积室中沉积Ta盖层来形成。所得到的氮化盖层表现出减少的镜面散射，这导致磁阻传感器的改善的磁性能。

5. 发明授权

US07333302B2 GMR sensor having an under-layer treated with nitrogen for increased magnetoresistance 失效
标题翻译： GMR传感器具有用氮气处理的底层以提高磁阻
公开(公告)号：US07333302B2
公开(公告)日：2008-02-19
申请号：US11769519
申请日：2007-06-27
申请人： Wen-yaung Lee , Thomas E. Shatz , Dulip Ajantha Welipitiya , Brian R. York
发明人： Wen-yaung Lee , Thomas E. Shatz , Dulip Ajantha Welipitiya , Brian R. York
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B5/3909 , G11B2005/3996
摘要： A magnetoresistive sensor having a substrate that has been treated with nitrogen (nitrogenated). The nitrogenated substrate includes an alumina base layer and a thin top layer of crystalline alumina that has had a very small amount of nitrogen deposited on top. The amount of nitrogen deposited on top of the alumina is less than or equal to two monolayer, and is preferably less than on monolayer. The amount of nitrogen deposited on top of the alumina substrate is not enough to constitute a layer of nitrogen, but affects the structure of the alumina to cause the alumina to have a desired crystalline structure and an extremely smooth surface.
摘要翻译：具有已经用氮气（氮化）处理的衬底的磁阻传感器。氮化基底包括氧化铝基底层和结晶氧化铝的薄顶层，其顶部具有非常少量的氮。沉积在氧化铝顶部的氮的量小于或等于两个单层，并且优选小于单层。沉积在氧化铝基体顶部的氮的量不足以构成氮层，但是影响氧化铝的结构以使氧化铝具有所需的晶体结构和非常光滑的表面。

6. 发明授权

US07251110B2 GMR sensor having layers treated with nitrogen for increased magnetoresistance 有权
标题翻译： GMR传感器具有用氮处理的层以增加磁阻
公开(公告)号：US07251110B2
公开(公告)日：2007-07-31
申请号：US11039085
申请日：2005-01-18
申请人： Wen-yaung Lee , Thomas E. Shatz , Dulip Ajantha Welipitiya , Brian R. York
发明人： Wen-yaung Lee , Thomas E. Shatz , Dulip Ajantha Welipitiya , Brian R. York
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B5/3909 , G11B2005/3996
摘要： A magnetoresistive sensor having a substrate that has been treated with nitrogen (nitrogenated) and having a Ta cap layer with nitrogen added in situ during deposition. The nitrogenated substrate includes an alumina base layer and a thin top layer of crystalline alumina that has had a very small amount of nitrogen deposited on top. The amount of nitrogen deposited on top of the alumina is less than or equal to two monolayer, and is preferably less than on monolayer. The amount of nitrogen deposited on top of the alumina substrate is riot enough to constitute a layer of nitrogen, but affects the structure of the alumina to cause the alumina to have a desired crystalline structure and an extremely smooth surface. The nitrogen in the cap layer can be formed by depositing a Ta cap layer in a sputter deposition chamber having a small amount of nitrogen in an Ar atmosphere.
摘要翻译：一种磁阻传感器，其具有已经用氮气（氮化）处理并且在沉积期间具有氮原位加入的Ta盖层的衬底。氮化基底包括氧化铝基底层和结晶氧化铝的薄顶层，其顶部具有非常少量的氮。沉积在氧化铝顶部的氮的量小于或等于两个单层，并且优选小于单层。沉积在氧化铝基体上的氮的量足以构成氮层，但影响氧化铝的结构，使氧化铝具有所需的结晶结构和非常光滑的表面。盖层中的氮可以通过在Ar气氛中在具有少量氮的溅射沉积室中沉积Ta盖层来形成。

7. 发明申请

US20090257152A1 MAGNETORESISTIVE SENSOR WITH HIGH TMR AND LOW RA 有权
标题翻译：具有高TMR和低RA的磁传感器
公开(公告)号：US20090257152A1
公开(公告)日：2009-10-15
申请号：US12345733
申请日：2008-12-30
申请人： Wen-yaung Lee , Chang Man Park , Brian R. York , Alexander M. Zeltser
发明人： Wen-yaung Lee , Chang Man Park , Brian R. York , Alexander M. Zeltser
IPC分类号： G11B5/33
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A magnetoresistive sensor having an antiparallel coupled pinned layer structure including an AP1 layer and an AP2 layer. The AP2 layer includes two ferromagnetic layers AP2(a) and AP2(b), and a separation layer sandwiched therebetween. The AP2(a) layer is significantly larger than the AP2(b) layer, which results in strong pinning, while the separation layer provides increased TMR and reduced RA.
摘要翻译：一种具有包括AP1层和AP2层的反并联耦合固定层结构的磁阻传感器。 AP2层包括两个铁磁层AP2（a）和AP2（b），夹在它们之间的分离层。 AP2（a）层显着大于AP2（b）层，这导致强钉扎，而分离层提供增加的TMR和减少的RA。

8. 发明授权

US08107202B2 Magnetoresistive sensor with novel pinned layer structure 有权
标题翻译：具有新型钉扎层结构的磁阻传感器
公开(公告)号：US08107202B2
公开(公告)日：2012-01-31
申请号：US12345733
申请日：2008-12-30
申请人： Wen-yaung Lee , Chang Man Park , Brian R. York , Alexander M. Zeltser
发明人： Wen-yaung Lee , Chang Man Park , Brian R. York , Alexander M. Zeltser
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A magnetoresistive sensor having an antiparallel coupled pinned layer structure including an AP1 layer and an AP2 layer. The AP2 layer includes two ferromagnetic layers AP2(a) and AP2(b), and a separation layer sandwiched therebetween. The AP2(a) layer is significantly larger than the AP2(b) layer, which results in strong pinning, while the separation layer provides increased TMR and reduced RA.
摘要翻译：一种具有包括AP1层和AP2层的反并联耦合固定层结构的磁阻传感器。 AP2层包括两个铁磁层AP2（a）和AP2（b），夹在它们之间的分离层。 AP2（a）层显着大于AP2（b）层，这导致强钉扎，而分离层提供增加的TMR和减少的RA。

9. 发明授权

US07190557B2 Current-in-the-plane spin valve magnetoresistive sensor with dual metal oxide capping layers 失效
标题翻译：具有双金属氧化物覆盖层的电流在平面自旋阀磁阻传感器
公开(公告)号：US07190557B2
公开(公告)日：2007-03-13
申请号：US10824701
申请日：2004-04-14
申请人： Jinshan Li , Brian R. York , Alexander M. Zeltser
发明人： Jinshan Li , Brian R. York , Alexander M. Zeltser
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3929 , G11B2005/3996
摘要： A bottom-pinned current-in-the-plane spin-valve magnetoresistive sensor has a dual metal-oxide capping layer on the top ferromagnetic free layer. The first capping layer is formed on the free layer and is one or more oxides of zinc (Zn). The second capping layer is formed on the first capping layer and is an oxide of a metal having an affinity for oxygen greater than Zn, such as one or more oxides of Ta, Al, Hf, Zr, Y, Ti, W, Si, V, Mg, Cr, Nb, Mo and Mn.
摘要翻译：底部固定的电流在平面中的自旋阀磁阻传感器在顶部铁磁自由层上具有双金属氧化物覆盖层。第一覆盖层形成在自由层上，并且是锌（Zn）的一种或多种氧化物。第二覆盖层形成在第一覆盖层上，并且是具有大于Zn的氧的亲和性的金属的氧化物，例如一种或多种Ta，Al，Hf，Zr，Y，Ti，W，Si， V，Mg，Cr，Nb，Mo和Mn。

10. 发明申请

US20130229728A1 SUBSTRATE NITROGEN PLASMA TREATMENT FOR SOFTER CoFe MAIN POLE WRITER FORMATION 有权
标题翻译：基质硝基等离子体处理
公开(公告)号：US20130229728A1
公开(公告)日：2013-09-05
申请号：US13411424
申请日：2012-03-02
申请人： Elizabeth A. Brinkman , Ning Shi , Brian R. York
发明人： Elizabeth A. Brinkman , Ning Shi , Brian R. York
IPC分类号： G11B5/33 , B05D3/10 , B05D5/00 , G11B21/02
CPC分类号： G11B5/3163 , G11B5/3116 , G11B5/3133 , Y10T428/115
摘要： A magnetic head according to one embodiment includes a nonmagnetic gap layer in a trench; a pole seed layer above the nonmagnetic gap layer; and a pole layer of a magnetic material above the pole seed layer, wherein at least one of the nonmagnetic gap layer, the pole seed layer and the pole layer has nitrogen therein. A magnetic head according to another embodiment includes a nonmagnetic gap layer in a trench; a pole seed layer above the nonmagnetic gap layer, the pole seed layer being comprised primarily of a material selected from a group consisting of NiCr, Ta/Ru, Ta/Rh, NiCr/Ru, NiCr/Rh, NiCr, CoOx, Ru, Rh, Cu, Au/MgO, Ta/Cu; and a pole layer comprised primarily of CoFe above the pole seed layer, wherein at least one of the nonmagnetic gap layer, the pole seed layer and the pole layer has nitrogen therein.
摘要翻译：根据一个实施例的磁头包括沟槽中的非磁性间隙层; 在非磁性间隙层上方的极点种子层; 以及在极种子层上方的磁性材料的极层，其中非磁性间隙层，极点种子层和极层中的至少一个在其中具有氮。根据另一实施例的磁头在沟槽中包括非磁性间隙层; 极性种子层主要由选自NiCr，Ta / Ru，Ta / Rh，NiCr / Ru，NiCr / Rh，NiCr，CoO x，Ru， Rh，Cu，Au / MgO，Ta / Cu; 以及在极晶种层上方主要由CoFe组成的极层，其中非磁性间隙层，极点种子层和极层中的至少一个在其中具有氮。

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