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1. 发明授权

US07190557B2 Current-in-the-plane spin valve magnetoresistive sensor with dual metal oxide capping layers 失效
标题翻译：具有双金属氧化物覆盖层的电流在平面自旋阀磁阻传感器
公开(公告)号：US07190557B2
公开(公告)日：2007-03-13
申请号：US10824701
申请日：2004-04-14
申请人： Jinshan Li , Brian R. York , Alexander M. Zeltser
发明人： Jinshan Li , Brian R. York , Alexander M. Zeltser
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3929 , G11B2005/3996
摘要： A bottom-pinned current-in-the-plane spin-valve magnetoresistive sensor has a dual metal-oxide capping layer on the top ferromagnetic free layer. The first capping layer is formed on the free layer and is one or more oxides of zinc (Zn). The second capping layer is formed on the first capping layer and is an oxide of a metal having an affinity for oxygen greater than Zn, such as one or more oxides of Ta, Al, Hf, Zr, Y, Ti, W, Si, V, Mg, Cr, Nb, Mo and Mn.
摘要翻译：底部固定的电流在平面中的自旋阀磁阻传感器在顶部铁磁自由层上具有双金属氧化物覆盖层。第一覆盖层形成在自由层上，并且是锌（Zn）的一种或多种氧化物。第二覆盖层形成在第一覆盖层上，并且是具有大于Zn的氧的亲和性的金属的氧化物，例如一种或多种Ta，Al，Hf，Zr，Y，Ti，W，Si， V，Mg，Cr，Nb，Mo和Mn。

2. 发明授权

US07646569B2 Pinned layer in magnetoresistive sensor 有权
标题翻译：磁阻传感器中的固定层
公开(公告)号：US07646569B2
公开(公告)日：2010-01-12
申请号：US11458896
申请日：2006-07-20
申请人： Jinshan Li , Kouichi Nishioka , Satoshi Shigematsu , Alexander M. Zeltser
发明人： Jinshan Li , Kouichi Nishioka , Satoshi Shigematsu , Alexander M. Zeltser
IPC分类号： G11B5/127
CPC分类号： G11B5/39
摘要： A method for manufacturing a magnetic read sensor and a magnetic read sensor are provided. In one embodiment of the invention, the method includes providing a seed layer disposed over a substrate of the magnetic read sensor, providing a free layer disposed over a seed layer and providing a spacer layer disposed over the free layer. The method further includes providing a pinned layer disposed over the spacer layer. In one embodiment, the pinned layer includes cobalt and iron, wherein the concentration of iron in the pinned layer is between 33 and 37 atomic percent (at. %). The method further includes providing a pinning layer disposed over the pinned layer, wherein the pinning layer is in contact with the pinned layer.
摘要翻译：提供了一种用于制造磁读取传感器和磁读取传感器的方法。在本发明的一个实施例中，该方法包括提供设置在磁读取传感器的衬底上的种子层，提供设置在种子层上的自由层并提供设置在自由层之上的间隔层。该方法还包括提供设置在间隔层上方的钉扎层。在一个实施例中，钉扎层包括钴和铁，其中钉扎层中的铁的浓度为33至37原子百分比（原子％）。该方法还包括提供设置在钉扎层上方的钉扎层，其中钉扎层与钉扎层接触。

3. 发明授权

US07538988B2 Method and apparatus having improved magnetic read head sensors 失效
标题翻译：具有改进的磁读头传感器的方法和装置
公开(公告)号：US07538988B2
公开(公告)日：2009-05-26
申请号：US10955396
申请日：2004-09-30
申请人： Jinshan Li , Alexander M. Zeltser
发明人： Jinshan Li , Alexander M. Zeltser
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3929 , G11B2005/3996
摘要： A method and apparatus for an improved magnetic read sensor having synthetic or AP pinned layers with high resistance and high magnetoelastic anisotropy is disclosed. A pinned layer includes a cobalt-iron ternary alloy, where a third constituent of the cobalt-iron ternary alloy layer is selected for increasing the resistance and magnetoelastic anisotropy of the cobalt-iron ternary alloy layer.
摘要翻译：公开了一种具有具有高电阻和高磁弹性各向异性的合成或AP钉扎层的改进磁读取传感器的方法和装置。钉扎层包括钴 - 铁三元合金，其中选择钴 - 铁三元合金层的第三成分用于提高钴 - 铁三元合金层的电阻和磁致弹性各向异性。

4. 发明授权

US07770282B2 Method of making a magnetic sensing device having an insulator structure 有权
标题翻译：制造具有绝缘体结构的磁感测装置的方法
公开(公告)号：US07770282B2
公开(公告)日：2010-08-10
申请号：US11219107
申请日：2005-09-01
申请人： Alexander M. Zeltser , Jinshan Li , Brian York
发明人： Alexander M. Zeltser , Jinshan Li , Brian York
IPC分类号： G11B5/127 , B05D3/04
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3163 , G11B5/3906 , H01F10/3254 , H01F10/3272 , H01F10/3281 , H01F41/18 , H01F41/303 , H01F41/325 , Y10T29/49043 , Y10T29/49044
摘要： A magnetic sensing device for use in a magnetic head includes a sensor stack structure having a sensing layer structure and an insulator structure formed adjacent the sensing layer structure. The insulator structure includes a plurality of oxidized metallic sublayers, a plurality of nitrided metallic sublayers, or a plurality of oxynitrided metallic sublayers. The insulator structure may be a capping layer structure of a giant magnetoresistance sensor or, alternatively, a tunnel barrier layer structure of a tunneling magnetoresistance sensor or a magnetic random access memory. Advantageously, each treated metallic sublayer is sufficiently uniformly treated so as to increase the magnetoresistive effect and improve soft magnetic properties of the magnetic sensing device. A method for use in forming the magnetic sensing device of the present application includes the steps of forming a sensor stack structure which includes a sensing layer structure; depositing a metallic layer; performing, on the metallic layer, either an oxidation, nitridation, or oxynitridation process; and repeating the steps of depositing and performing one or more times to thereby form an insulator structure.
摘要翻译：用于磁头的磁感测装置包括具有传感层结构的传感器堆叠结构和邻近传感层结构形成的绝缘体结构。绝缘体结构包括多个氧化金属子层，多个氮化金属子层或多个氮氧化金属子层。绝缘体结构可以是巨磁阻传感器的封盖层结构，或者是隧道磁阻传感器或磁随机存取存储器的隧道势垒层结构。有利地，每个经处理的金属子层被充分均匀地处理，以增加磁阻效应并改善磁感测装置的软磁特性。用于形成本申请的磁感测装置的方法包括以下步骤：形成包括感测层结构的传感器堆叠结构; 沉积金属层; 在金属层上进行氧化，氮化或氧氮化处理; 并重复沉积和执行一次或多次以形成绝缘体结构的步骤。

5. 发明申请

US20080019059A1 PINNED LAYER IN MAGNETORESISTIVE SENSOR 有权
标题翻译：磁性传感器中的固定层
公开(公告)号：US20080019059A1
公开(公告)日：2008-01-24
申请号：US11458896
申请日：2006-07-20
申请人： Jinshan Li , Kouichi Nishioka , Satoshi Shigematsu , Alexander M. Zeltser
发明人： Jinshan Li , Kouichi Nishioka , Satoshi Shigematsu , Alexander M. Zeltser
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/39
摘要： A method for manufacturing a magnetic read sensor and a magnetic read sensor are provided. In one embodiment of the invention, the method includes providing a seed layer disposed over a substrate of the magnetic read sensor, providing a free layer disposed over a seed layer and providing a spacer layer disposed over the free layer. The method further includes providing a pinned layer disposed over the spacer layer. In one embodiment, the pinned layer includes cobalt and iron, wherein the concentration of iron in the pinned layer is between 33 and 37 atomic percent (at. %). The method further includes providing a pinning layer disposed over the pinned layer, wherein the pinning layer is in contact with the pinned layer.
摘要翻译：提供了一种用于制造磁读取传感器和磁读取传感器的方法。在本发明的一个实施例中，该方法包括提供设置在磁读取传感器的衬底上的种子层，提供设置在种子层上的自由层并提供设置在自由层之上的间隔层。该方法还包括提供设置在间隔层上方的钉扎层。在一个实施例中，钉扎层包括钴和铁，其中钉扎层中的铁的浓度为33至37原子百分比（原子％）。该方法还包括提供设置在钉扎层上方的钉扎层，其中钉扎层与钉扎层接触。

6. 发明申请

US20090257152A1 MAGNETORESISTIVE SENSOR WITH HIGH TMR AND LOW RA 有权
标题翻译：具有高TMR和低RA的磁传感器
公开(公告)号：US20090257152A1
公开(公告)日：2009-10-15
申请号：US12345733
申请日：2008-12-30
申请人： Wen-yaung Lee , Chang Man Park , Brian R. York , Alexander M. Zeltser
发明人： Wen-yaung Lee , Chang Man Park , Brian R. York , Alexander M. Zeltser
IPC分类号： G11B5/33
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A magnetoresistive sensor having an antiparallel coupled pinned layer structure including an AP1 layer and an AP2 layer. The AP2 layer includes two ferromagnetic layers AP2(a) and AP2(b), and a separation layer sandwiched therebetween. The AP2(a) layer is significantly larger than the AP2(b) layer, which results in strong pinning, while the separation layer provides increased TMR and reduced RA.
摘要翻译：一种具有包括AP1层和AP2层的反并联耦合固定层结构的磁阻传感器。 AP2层包括两个铁磁层AP2（a）和AP2（b），夹在它们之间的分离层。 AP2（a）层显着大于AP2（b）层，这导致强钉扎，而分离层提供增加的TMR和减少的RA。

7. 发明授权

US08107202B2 Magnetoresistive sensor with novel pinned layer structure 有权
标题翻译：具有新型钉扎层结构的磁阻传感器
公开(公告)号：US08107202B2
公开(公告)日：2012-01-31
申请号：US12345733
申请日：2008-12-30
申请人： Wen-yaung Lee , Chang Man Park , Brian R. York , Alexander M. Zeltser
发明人： Wen-yaung Lee , Chang Man Park , Brian R. York , Alexander M. Zeltser
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A magnetoresistive sensor having an antiparallel coupled pinned layer structure including an AP1 layer and an AP2 layer. The AP2 layer includes two ferromagnetic layers AP2(a) and AP2(b), and a separation layer sandwiched therebetween. The AP2(a) layer is significantly larger than the AP2(b) layer, which results in strong pinning, while the separation layer provides increased TMR and reduced RA.
摘要翻译：一种具有包括AP1层和AP2层的反并联耦合固定层结构的磁阻传感器。 AP2层包括两个铁磁层AP2（a）和AP2（b），夹在它们之间的分离层。 AP2（a）层显着大于AP2（b）层，这导致强钉扎，而分离层提供增加的TMR和减少的RA。

8. 发明授权

US08958176B2 Write head pole laminate structure 有权
标题翻译：写头磁极层压结构
公开(公告)号：US08958176B2
公开(公告)日：2015-02-17
申请号：US12976993
申请日：2010-12-22
申请人： Jeffrey R. Childress , Alexander M. Zeltser
发明人： Jeffrey R. Childress , Alexander M. Zeltser
IPC分类号： G11B5/147 , G11B5/127 , G11B5/31
CPC分类号： G11B5/1278 , G11B5/147 , G11B5/3116 , Y10T428/115
摘要： The present invention generally relates to a write head pole laminate structure. The write head pole structure can include multiple multi-layer magnetic structures that are separated by a non-magnetic material that is amorphous or microcrystalline. Each multi-layer magnetic structure includes one or more first magnetic layers that are spaced from one or more second magnetic layers by a non-magnetic layer such that the one or more first magnetic layers are substantially identical to the one or more second magnetic layers. In such a design, the one or more second magnetic layers are antiparallel to the one or more first magnetic layers so that a zero total net magnetic moment is present for the multi-layer magnetic structure when current is removed from the write head pole.
摘要翻译：本发明一般涉及一种书写磁头极板层叠结构。写头磁极结构可以包括被非晶或微晶的非磁性材料隔开的多个多层磁结构。每个多层磁性结构包括一个或多个第一磁性层，其通过非磁性层与一个或多个第二磁性层间隔开，使得一个或多个第一磁性层基本上与一个或多个第二磁性层相同。在这种设计中，一个或多个第二磁性层与一个或多个第一磁性层反平行，使得当电流从写入磁头极移除时，多层磁性结构存在零总的净磁矩。

9. 发明授权

US08675316B2 Magnetoresistive sensor with sub-layering of pinned layers 有权
标题翻译：磁阻传感器，分层钉扎层
公开(公告)号：US08675316B2
公开(公告)日：2014-03-18
申请号：US12101761
申请日：2008-04-11
申请人： Wen-yaung Lee , Daniele Mauri , Alexander M. Zeltser
发明人： Wen-yaung Lee , Daniele Mauri , Alexander M. Zeltser
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3906 , H01F10/3254 , H01F10/3272 , H01F41/307 , H01L43/08
摘要： Methods and apparatus provide magnetoresistance sensors. A tunneling magnetoresistance (TMR) sensor may include configurations that are arranged as a top TMR stack. One of two antiparallel layers of pinned layers within the TMR stack may be subdivided by a spacer layer. Tantalum may form the spacer layer that is inserted in a reference layer, which is one of the pinned layers and is located between a barrier layer and an antiparallel coupling layer that enables antiparallel coupling between the reference layer and a keeper layer of the pinned layers. The barrier layer deposited on a free layer of the TMR stacks separates the pinned layers from the free layer such that TMR effects are detectable with the sensors.
摘要翻译：方法和装置提供磁阻传感器。隧道磁阻（TMR）传感器可以包括被布置为顶部TMR堆叠的配置。 TMR堆叠中的钉扎层的两个反平行层之一可以被间隔层细分。钽可以形成插入到参考层中的间隔层，该参考层是被钉扎层之一，并且位于阻挡层和反平行耦合层之间，其使参考层和被钉扎层的保持层之间能够反平行耦合。沉积在TMR堆叠的自由层上的阻挡层将被钉扎层与自由层分离，使得TMR效应可以用传感器检测。

10. 发明申请

US20120156522A1 CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE (MR) SENSOR WITH IMPROVED SEED LAYER STRUCTURE FOR HARD BIAS LAYER 有权
标题翻译：具有改进的用于硬偏层的种子层结构的电流 - 平面（CPP）磁传感器（MR）传感器
公开(公告)号：US20120156522A1
公开(公告)日：2012-06-21
申请号：US12969466
申请日：2010-12-15
申请人： Stefan Maat , Alexander M. Zeltser
发明人： Stefan Maat , Alexander M. Zeltser
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B2005/3996 , Y10T428/1121
摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor has an improved seed layer structure for the ferromagnetic hard (high coercivity) bias layer that is used to longitudinally bias the sensor's free ferromagnetic layer. The seed layer structure is a trilayer consisting of a first seed layer of tantalum (Ta), a second seed layer of one or both titanium (Ti) and Ti-oxide on and in contact with the Ta layer, and a third seed layer of tungsten (W) on and in contact with the second seed layer.
摘要翻译：电流垂直于平面（CPP）磁阻（MR）传感器具有用于铁磁硬（高矫顽力）偏置层的改进的种子层结构，其用于纵向偏置传感器的自由铁磁层。种子层结构是由钽（Ta）的第一种子层，与Ta层接触并与Ta层接触的钛（Ti）和Ti氧化物中的一种或两种的第二晶种层组成的三层，以及第三种子层钨（W）与第二种子层接触并接触。

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