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1. 发明授权

US5078804A I-III-VI.sub.2 based solar cell utilizing the structure CuInGaSe.sub.2 CdZnS/ZnO 失效
标题翻译：采用结构CuInGaSe2CdZnS / ZnO的I-III-VI2型太阳能电池
公开(公告)号：US5078804A
公开(公告)日：1992-01-07
申请号：US569411
申请日：1990-08-17
申请人： Wen S. Chen , John M. Stewart
发明人： Wen S. Chen , John M. Stewart
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/0336 , H01L31/18
CPC分类号： H01L31/0749 , H01L31/02168 , H01L31/022425 , H01L31/022466 , H01L31/1836 , Y02E10/541 , Y10S438/93
摘要： A thin film I-III-VI.sub.2 based solar cell having a first layer of copper indium gallium selenide, a second layer of cadmium zinc sulfide, a double layer of zinc oxide, and a metallization structure comprised of a layer of nickel covered by a layer of aluminum. An optional antireflective coating may be placed on said metallization structure. The cadmium zinc sulfide layer is deposited by means of an aqueous solution growth deposition process and may actually consist of two layers: a low zinc content layer and a high zinc content layer. Photovoltaic efficiencies of 12.5% at Air Mass 1.5 illumination conditions and 10.4% under AMO illumination can be achieved.
摘要翻译：一种薄膜I-III-VI2基太阳能电池，其具有第一层铜铟镓硒，第二层硫化镉锌，双层氧化锌，以及金属化结构，包括被层覆盖的镍层的铝。可选的抗反射涂层可以放置在所述金属化结构上。硫化锌硫化锌层通过水溶液生长沉积工艺沉积，实际上可由两层组成：低锌含量层和高锌含量层。在空气质量1.5照明条件下的光电效率为12.5％，AMO照明下的光伏效率为10.4％。

2. 发明授权

US5141564A Mixed ternary heterojunction solar cell 失效
标题翻译：混合三元异质结太阳能电池
公开(公告)号：US5141564A
公开(公告)日：1992-08-25
申请号：US644069
申请日：1991-01-17
申请人： Wen S. Chen , John M. Stewart
发明人： Wen S. Chen , John M. Stewart
IPC分类号： H01L31/0336 , H01L31/0392 , H01L31/18
CPC分类号： H01L31/0749 , H01L31/0392 , H01L31/03925 , H01L31/03928 , H01L31/1876 , Y02E10/541 , Y02P70/521 , Y10S438/93
摘要： A thin film heterojunction solar cell and a method of making it has a p-type layer of mixed ternary I-III-VI.sub.2 semiconductor material in contact with an n-type layer of mixed binary II-VI semiconductor material. The p-type semiconductor material includes a low resistivity copper-rich region adjacent the back metal contact of the cell and a composition gradient providing a minority carrier mirror that improves the photovoltaic performance of the cell. The p-type semiconductor material preferably is CuInGaSe.sub.2 or CuIn(SSe).sub.2.
摘要翻译：薄膜异质结太阳能电池及其制造方法具有与混合二元II-VI半导体材料的n型层接触的混合三元I-III-VI2半导体材料的p型层。 p型半导体材料包括邻近电池的背金属接触的低电阻率富铜区域和提供少数载流子反射镜的组成梯度，其改善电池的光伏性能。 p型半导体材料优选为CuInGaSe 2或CuIn（SSe）2。

3. 发明授权

US4392451A Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI.sub.2 chalcopyrite compounds 失效
标题翻译：使用选自I-III-VI2类黄铜矿化合物的材料形成薄膜异质结太阳能电池的设备
公开(公告)号：US4392451A
公开(公告)日：1983-07-12
申请号：US278343
申请日：1981-07-02
申请人： Reid A. Mickelsen , Wen S. Chen
发明人： Reid A. Mickelsen , Wen S. Chen
IPC分类号： C23C14/02 , C23C14/54 , H01L31/032 , H01L31/0336 , H01L31/072 , H01L31/18 , C23C13/10
CPC分类号： H01L31/0749 , C23C14/027 , C23C14/54 , H01L31/0322 , H01L31/03365 , H01L31/072 , H01L31/18 , H01L31/1876 , Y02E10/541 , Y02P70/521 , Y10S148/006 , Y10S148/12 , Y10S148/169
摘要： Apparatus for forming thin-film, large area solar cells having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n-type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in the first semiconductor layer to evolve into p-type material, thereby defining a thin layer heterojunction device characterized by the absence of voids, vacancies and nodules which tend to reduce the energy conversion efficiency of the system.
摘要翻译：用于形成具有相对较高的光电能转换效率的薄膜，大面积太阳能电池的装置，其特征在于，所述电池包括由以下组成的pn型异质结：（i）第一半导体层，包括光电活性材料选自I-III-VI2黄铜矿三元材料类，其被真空沉积在约2.5微米至约5.0微米级的薄“组成分级”层（类似2.5微米至类似5.0微米）并且其中所述光伏活性材料的下部区域优选地包括具有相对高电阻率的重叠区域的p型半导体材料的低电阻率区域，限定瞬态pn同质结的瞬态n型半导体材料; 和（ii）包括低电阻率n型半导体材料的第二半导体层，其中在第一半导体层的两个离散的并置区域的元素成分之间的互扩散（a）限定了瞬态pn同质结层，以及（b）第一半导体层和第二n型半导体层中的瞬态n型材料使得第一半导体层中的瞬态n型材料演变成p型材料，从而限定了薄层异质结装置，其特征在于，没有空隙，空位和结节，这倾向于降低系统的能量转换效率。

4. 发明授权

US5479669A Multi-purpose tool for IC 失效
标题翻译： IC多用途工具
公开(公告)号：US5479669A
公开(公告)日：1996-01-02
申请号：US289784
申请日：1994-08-12
申请人： Wen S. Chen
发明人： Wen S. Chen
IPC分类号： H05K13/00 , H05K13/04 , B25F1/00 , B23P19/00
CPC分类号： H05K13/0447 , H05K13/0092 , Y10T29/53257 , Y10T29/53283
摘要： A multi-purpose tool for IC including a body having a left portion, a right portion, and an intermediate portion fitted between the left portion and the right portion, a pair of inner arms each pivotally connected with an upper end of the left portion and the right portion, and a pair of outer arms each pivotally connected with an upper end of the left portion and the right portion, whereby the tool can be for straightening the feet of a IC, engaging a IC with a seat, and disengaging a IC from a seat.
摘要翻译：一种用于IC的多用途工具，包括具有左部分和右部分的左部分，右部分和中间部分的主体，与左部分的上端枢转连接的一对内臂，以及右侧部分和一对外臂，其各自与左部分和右部分的上端枢转连接，由此该工具可用于矫正IC的脚，使IC与座接合，并且使IC 从座位上

5. 再颁专利

USRE31968E Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2 失效
标题翻译：从I-III-VI2黄铜矿化合物形成薄膜异质结太阳能电池的方法和由此制备的太阳能电池
公开(公告)号：USRE31968E
公开(公告)日：1985-08-13
申请号：US620637
申请日：1984-06-14
申请人： Reid A. Mickelsen , Wen S. Chen
发明人： Reid A. Mickelsen , Wen S. Chen
IPC分类号： H01L31/032 , H01L31/0336 , H01L31/072 , H01L31/18
CPC分类号： H01L31/0749 , H01L31/0322 , H01L31/03365 , H01L31/072 , H01L31/18 , Y02E10/541
摘要： An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order ot about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes theThe Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

6. 发明授权

US4523051A Thin films of mixed metal compounds 失效
标题翻译：混合金属化合物薄膜
公开(公告)号：US4523051A
公开(公告)日：1985-06-11
申请号：US536395
申请日：1983-09-27
申请人： Reid A. Mickelsen , Wen S. Chen
发明人： Reid A. Mickelsen , Wen S. Chen
IPC分类号： H01L31/0224 , H01L31/032 , H01L31/0336 , H01L31/072 , H01L31/06 , H01L31/18
CPC分类号： H01L31/0749 , H01L31/022425 , H01L31/0322 , H01L31/072 , Y02E10/541
摘要： A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.
摘要翻译：通过从独立的来源同时蒸发第一金属化合物和第二金属化合物，形成混合金属化合物的组成均匀的薄膜。通过气体减少蒸气颗粒之间的平均自由程，并且混合的蒸汽均匀沉积。本发明特别适用于形成薄膜异质结太阳能电池。

7. 发明授权

US5112410A Cadmium zinc sulfide by solution growth 失效
标题翻译：镉硫化锌通过溶液生长
公开(公告)号：US5112410A
公开(公告)日：1992-05-12
申请号：US563494
申请日：1990-08-07
申请人： Wen S. Chen
发明人： Wen S. Chen
IPC分类号： H01L21/368 , H01L31/0224 , H01L31/0296 , H01L31/0336 , H01L31/18
CPC分类号： H01L31/0749 , H01L21/02568 , H01L21/02628 , H01L31/022466 , H01L31/02966 , H01L31/1832 , Y02E10/541 , Y10T428/12528
摘要： A process for depositing thin layers of a II-VI compound cadmium zinc sulfide (CdZnS) by an aqueous solution growth technique with quality suitable for high efficiency photovoltaic or other devices which can benefit from the band edge shift resulting from the inclusion of Zn in the sulfide. A first solution comprising CdCl.sub.2 2.5H.sub.2 O, NH.sub.4 Cl, NH.sub.4 OH and ZnCl.sub.2, and a second solution comprising thiourea ((NH.sub.2).sub.2 CS) are combined and placed in a deposition cell, along with a substrate to form a thin i.e. 10 nm film of CdZnS on the substrate. This process can be sequentially repeated with to achieve deposition of independent multiple layers having different Zn concentrations.
摘要翻译：通过水溶液生长技术沉积II-VI化合物镉硫化锌（CdZnS）的薄层的方法，其优选适用于高效光伏或其它可以受益于在硫化物。将包含CdCl 2·2H 2 O，NH 4 Cl，NH 4 OH和ZnCl 2的第一溶液和包含硫脲（（NH 2）2CS）的第二溶液合并，并与基底一起放置在沉积池中，以形成薄的即10nm的CdZnS膜底物。可以依次重复该过程以实现具有不同Zn浓度的独立多层沉积。

8. 发明授权

US4335266A Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2 失效
标题翻译：从I-III-VI2黄铜矿化合物形成薄膜异质结太阳能电池的方法和由此制备的太阳能电池
公开(公告)号：US4335266A
公开(公告)日：1982-06-15
申请号：US221761
申请日：1980-12-31
申请人： Reid A. Mickelsen , Wen S. Chen
发明人： Reid A. Mickelsen , Wen S. Chen
IPC分类号： C23C14/54 , H01L20060101 , H01L21/20 , H01L21/203 , H01L31/032 , H01L31/0336 , H01L31/04 , H01L31/072 , H01L31/0749 , H01L31/18 , H01L31/06
CPC分类号： H01L31/0749 , H01L31/0322 , H01L31/03365 , H01L31/072 , H01L31/18 , Y02E10/541 , Y10S148/063 , Y10S148/12
摘要： An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5.mu.m to .congruent.5.0.mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material inThe Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.
摘要翻译：一种改进的薄膜，大面积太阳能电池及其形成方法，具有相对高的光电能转换效率，其特征在于该电池包括由以下组成的pn型异质结：（i）第一半导体层，其包含选自I-III-VI2黄铜矿三元材料的类型的光伏活性材料，其被真空沉积在约2.5微米至约5.0微米级的薄“组成分级”层（类似2.5μm 其中光伏活性材料的下部区域优选地包括具有相对高电阻率的重叠区域的p型半导体材料的低电阻率区域，限定瞬态pn同质结的瞬态n型半导体材料; 和（ii）包括低电阻率n型半导体材料的第二半导体层; 其中所述第一半导体层的两个离散并置区域的元素成分之间的相互扩散（a）限定了瞬态pn同质结层，以及（b）在第一半导体层中的瞬态n型材料和第二n型半导体之间导致第一半导体层中的瞬态n型材料演变成p型材料，从而限定了薄层异质结装置，其特征在于不存在空隙，空位和结节，这倾向于降低系统的能量转换效率。

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