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1. 发明授权

US08263959B2 Phase change memory device and method of manufacture thereof 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US08263959B2
公开(公告)日：2012-09-11
申请号：US11746315
申请日：2007-05-09
申请人： Chao-Hsiung Wang , Li-Shyue Lai , Denny Tang , Wen-Chin Lin
发明人： Chao-Hsiung Wang , Li-Shyue Lai , Denny Tang , Wen-Chin Lin
IPC分类号： H01L29/04
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/144 , H01L45/148 , H01L45/1675 , H01L45/1683
摘要： A method of manufacturing a memory device is provided. The method includes forming an electrode over a substrate. The method also includes forming an opening in the electrode to provide a tapered electrode contact surface proximate the opening. The method further includes forming a phase change feature over the electrode and on the tapered electrode contact surface.
摘要翻译：提供一种制造存储器件的方法。该方法包括在衬底上形成电极。该方法还包括在电极中形成开口以提供靠近开口的锥形电极接触表面。该方法还包括在电极上和锥形电极接触表面上形成相变特征。

2. 发明授权

US07151271B2 System and method for passing high energy particles through a mask 有权
标题翻译：将高能粒子通过掩模的系统和方法
公开(公告)号：US07151271B2
公开(公告)日：2006-12-19
申请号：US10681541
申请日：2003-10-08
申请人： Chao-Hsiung Wang , Denny Tang , Wen-Chin Lin , Li-Shyue Lai
发明人： Chao-Hsiung Wang , Denny Tang , Wen-Chin Lin , Li-Shyue Lai
IPC分类号： A61N5/00 , G21G5/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00
摘要： A method and system is disclosed for concentrating high energy particles on a predetermined area on a target semiconductor substrate. A high energy source for generating a predetermined amount of high energy particles, and an electro-magnetic radiation source for generating low energy beams are used together. The system also uses a mask set having at least one mask with at least one alignment area and at least one mask target area thereon, the mask target area passing more high energy particles then any other area of the mask. At least one protection shield is incorporated in the system for protecting the alignment area from being exposed to the high energy particles, wherein the mask is aligned with the predetermined target semiconductor substrate by passing the low energy beams through the alignment area, wherein the high energy particles generated by the high energy source pass through the mask target area to land on the predetermined area on the target semiconductor substrate.
摘要翻译：公开了一种用于将高能粒子集中在目标半导体衬底上的预定区域上的方法和系统。用于产生预定量的高能粒子的高能量源和用于产生低能量束的电磁辐射源一起使用。该系统还使用具有至少一个具有至少一个对准区域和至少一个掩模目标区域的掩模的掩模组，掩模目标区域通过更多的高能粒子，然后通过掩模的任何其它区域。至少一个保护屏蔽被并入系统中，用于保护对准区域不暴露于高能粒子，其中通过使低能量束通过对准区域，掩模与预定目标半导体衬底对齐，其中高能量由高能量源产生的粒子通过掩模对象区域落在目标半导体衬底上的预定区域上。

3. 发明授权

US08153471B2 Method for forming a reduced active area in a phase change memory structure 有权
标题翻译：在相变存储器结构中形成减小的有效面积的方法
公开(公告)号：US08153471B2
公开(公告)日：2012-04-10
申请号：US12945860
申请日：2010-11-14
申请人： Li-Shyue Lai , Chao-Hsiung Wang , Denny Tang , Wen-Chin Lin
发明人： Li-Shyue Lai , Chao-Hsiung Wang , Denny Tang , Wen-Chin Lin
IPC分类号： H01L21/06
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/124 , H01L45/1273 , H01L45/144 , H01L45/1691
摘要： A phase change memory structure and method for forming the same, the method including providing a substrate comprising a conductive area; forming a spacer having a partially exposed sidewall region at an upper portion of the spacer defining a phase change memory element contact area; and, wherein the spacer bottom portion partially overlaps the conductive area. Both these two methods can reduce active area of a phase change memory element, therefore, reducing a required phase changing electrical current.
摘要翻译：一种相变存储器结构及其形成方法，所述方法包括提供包括导电区域的衬底; 在间隔物的上部形成具有部分暴露的侧壁区域的间隔物，其限定相变存储元件接触区域; 并且其中所述间隔件底部部分与所述导电区域重叠。这两种方法都可以减少相变存储元件的有效面积，从而减少所需的相变电流。

4. 发明申请

US20070091672A1 MRAM arrays and methods for writing and reading magnetic memory devices 有权
标题翻译： MRAM阵列和写入和读取磁存储器件的方法
公开(公告)号：US20070091672A1
公开(公告)日：2007-04-26
申请号：US11610739
申请日：2006-12-14
申请人： Wen-Chin Lin , Denny Tang , Li-Shyue Lai , Chao-Hsiung Wang , Fan-Shi Lai
发明人： Wen-Chin Lin , Denny Tang , Li-Shyue Lai , Chao-Hsiung Wang , Fan-Shi Lai
IPC分类号： G11C11/00
CPC分类号： G11C11/1673
摘要： A non-destructive technique and related array for writing and reading magnetic memory cells, including sampling a first signal of a selected read line corresponding to select memory cells, applying a magnetic field to the select memory cells, sampling a second signal of the selected read line, and comparing the first and second signals to determine a logic state of the select memory cells.
摘要翻译：一种用于写入和读取磁存储单元的非破坏性技术和相关阵列，包括对与选择存储器单元相对应的所选读取行的第一信号进行采样，向选择存储单元施加磁场，对所选择的读取的第二信号并且比较第一和第二信号以确定选择存储器单元的逻辑状态。

5. 发明授权

US07105879B2 Write line design in MRAM 有权
公开(公告)号：US07105879B2
公开(公告)日：2006-09-12
申请号：US10827769
申请日：2004-04-20
申请人： Wen Chin Lin , Denny Tang , Li-shyue Lai , Chao-Hsiung Wang
发明人： Wen Chin Lin , Denny Tang , Li-shyue Lai , Chao-Hsiung Wang
IPC分类号： H01L29/76
CPC分类号： G11C11/15 , G11C5/063
摘要： A magnetic random access memory device (MRAM) and the method for forming the same are disclosed. The MRAM has a magnetic tunnel junction (MTJ) device, a first write line, and a second write line orthogonal to the first write line, wherein at least one of the first and second write lines has a width narrower than that of the MTJ.

6. 发明申请

US20050077485A1 System and method for passing high energy particles through a mask 有权
标题翻译：将高能粒子通过掩模的系统和方法
公开(公告)号：US20050077485A1
公开(公告)日：2005-04-14
申请号：US10681541
申请日：2003-10-08
申请人： Chao-Hsiung Wang , Denny Tang , Wen-Chin Lin , Li-Shyue Lai
发明人： Chao-Hsiung Wang , Denny Tang , Wen-Chin Lin , Li-Shyue Lai
IPC分类号： G21G5/00 , H01L21/027
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00
摘要： A method and system is disclosed for concentrating high energy particles on a predetermined area on a target semiconductor substrate. A high energy source for generating a predetermined amount of high energy particles, and an electromagnetic radiation source for generating low energy beams are used together. The system also uses a mask set having at least one mask with at least one alignment area and at least one mask target area thereon, the mask target area passing more high energy particles then any other area of the mask. At least one protection shield is incorporated in the system for protecting the alignment area from being exposed to the high energy particles, wherein the mask is aligned with the predetermined target semiconductor substrate by passing the low energy beams through the alignment area, wherein the high energy particles generated by the high energy source pass through the mask target area to land on the predetermined area on the target semiconductor substrate.
摘要翻译：公开了一种用于将高能粒子集中在目标半导体衬底上的预定区域上的方法和系统。用于产生预定量的高能粒子的高能量源和用于产生低能量束的电磁辐射源一起使用。该系统还使用具有至少一个具有至少一个对准区域和至少一个掩模目标区域的掩模的掩模组，掩模目标区域通过更多的高能粒子，然后通过掩模的任何其它区域。至少一个保护屏蔽被并入系统中，用于保护对准区域不暴露于高能粒子，其中通过使低能量束通过对准区域，掩模与预定目标半导体衬底对齐，其中高能量由高能量源产生的粒子通过掩模对象区域落在目标半导体衬底上的预定区域上。

7. 发明授权

US07436698B2 MRAM arrays and methods for writing and reading magnetic memory devices 有权
标题翻译： MRAM阵列和写入和读取磁存储器件的方法
公开(公告)号：US07436698B2
公开(公告)日：2008-10-14
申请号：US11610739
申请日：2006-12-14
申请人： Wen-Chin Lin , Denny Tang , Li-Shyue Lai , Chao-Hsiung Wang , Fan-Shi Jordan Lai
发明人： Wen-Chin Lin , Denny Tang , Li-Shyue Lai , Chao-Hsiung Wang , Fan-Shi Jordan Lai
IPC分类号： G11C11/00
CPC分类号： G11C11/1673
摘要： A non-destructive technique and related array for writing and reading magnetic memory cells, including sampling a first signal of a selected read line corresponding to select memory cells, applying a magnetic field to the select memory cells, sampling a second signal of the selected read line, and comparing the first and second signals to determine a logic state of the select memory cells.
摘要翻译：一种用于写入和读取磁存储单元的非破坏性技术和相关阵列，包括对与选择存储器单元相对应的所选读取行的第一信号进行采样，向选择存储单元施加磁场，对所选择的读取的第二信号并且比较第一和第二信号以确定选择存储器单元的逻辑状态。

8. 发明申请

US20050243598A1 MRAM arrays and methods for writing and reading magnetic memory devices 有权
标题翻译： MRAM阵列和写入和读取磁存储器件的方法
公开(公告)号：US20050243598A1
公开(公告)日：2005-11-03
申请号：US11115422
申请日：2005-04-27
申请人： Wen-Chin Lin , Denny Tang , Li-Shyue Lai , Chao-Hsiung Wang , Fang-Shi Lai
发明人： Wen-Chin Lin , Denny Tang , Li-Shyue Lai , Chao-Hsiung Wang , Fang-Shi Lai
IPC分类号： G11C11/00 , G11C11/16
CPC分类号： G11C11/1673
摘要： A non-destructive technique and related array for writing and reading magnetic memory cells, including sampling a first signal of a selected read line corresponding to select memory cells, applying a magnetic field to the select memory cells, sampling a second signal of the selected read line, and comparing the first and second signals to determine a logic state of the select memory cells.
摘要翻译：一种用于写入和读取磁存储单元的非破坏性技术和相关阵列，包括对与选择存储器单元相对应的所选读取行的第一信号进行采样，向选择存储单元施加磁场，对所选择的读取的第二信号并且比较第一和第二信号以确定选择存储器单元的逻辑状态。

9. 发明申请

US20110059590A1 METHOD FOR FORMING A REDUCED ACTIVE AREA IN A PHASE CHANGE MEMORY STRUCTURE 有权
标题翻译：在相变存储器结构中形成减少的活动区域的方法
公开(公告)号：US20110059590A1
公开(公告)日：2011-03-10
申请号：US12945860
申请日：2010-11-14
申请人： Li-Shyue Lai , Chao-Hsiung Wang , Denny Tang , Wen-Chin Lin
发明人： Li-Shyue Lai , Chao-Hsiung Wang , Denny Tang , Wen-Chin Lin
IPC分类号： H01L21/02
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/124 , H01L45/1273 , H01L45/144 , H01L45/1691
摘要： A phase change memory structure and method for forming the same, the method including providing a substrate comprising a conductive area; forming a spacer having a partially exposed sidewall region at an upper portion of the spacer defining a phase change memory element contact area; and, wherein the spacer bottom portion partially overlaps the conductive area. Both these two methods can reduce active area of a phase change memory element, therefore, reducing a required phase changing electrical current.
摘要翻译：一种相变存储器结构及其形成方法，所述方法包括提供包括导电区域的衬底; 在间隔物的上部形成具有部分暴露的侧壁区域的间隔物，其限定相变存储元件接触区域; 并且其中所述间隔件底部部分与所述导电区域重叠。这两种方法都可以减少相变存储元件的有效面积，从而减少所需的相变电流。

10. 发明授权

US07858980B2 Reduced active area in a phase change memory structure 有权
标题翻译：在相变存储器结构中减少有效面积
公开(公告)号：US07858980B2
公开(公告)日：2010-12-28
申请号：US10791607
申请日：2004-03-01
申请人： Li-Shyue Lai , Chao-Hsiung Wang , Denny Tang , Wen-Chin Lin
发明人： Li-Shyue Lai , Chao-Hsiung Wang , Denny Tang , Wen-Chin Lin
IPC分类号： H01L29/18
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/124 , H01L45/1273 , H01L45/144 , H01L45/1691
摘要： A phase change memory structure and method for forming the same, the method including providing a substrate comprising a conductive area; forming a spacer having a partially exposed sidewall region at an upper portion of the spacer defining a phase change memory element contact area; and, wherein the spacer bottom portion partially overlaps the conductive area. Both these two methods can reduce active area of a phase change memory element, therefore, reducing a required phase changing electrical current.
摘要翻译：一种相变存储器结构及其形成方法，所述方法包括提供包括导电区域的衬底; 在间隔物的上部形成具有部分暴露的侧壁区域的间隔物，其限定相变存储元件接触区域; 并且其中所述间隔件底部部分与所述导电区域重叠。这两种方法都可以减少相变存储元件的有效面积，从而减少所需的相变电流。

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