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1. 发明申请

US20050011449A1 Gas delivery system for deposition processes, and methods of using same 审中-公开
标题翻译：用于沉积工艺的气体输送系统及其使用方法
公开(公告)号：US20050011449A1
公开(公告)日：2005-01-20
申请号：US10916918
申请日：2004-08-12
申请人： Weimin Li , Neal Rueger , Li Li , Ross Dando , Kevin Hamer , Allen Mardian , Gurtej Sandhu
发明人： Weimin Li , Neal Rueger , Li Li , Ross Dando , Kevin Hamer , Allen Mardian , Gurtej Sandhu
IPC分类号： C23C16/44 , C23C16/455 , C23C16/507 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/507
摘要： The present invention is generally directed to a novel gas delivery system for various deposition processes, and various methods of using same. In one illustrative embodiment, a deposition tool comprises a process chamber, a wafer stage adapted for holding a wafer positioned therein, and a gas delivery system positioned in the chamber above a position where a plasma will be generated in the chamber, wherein substantially all of a reactant gas is delivered into the chamber via the gas delivery system. In another illustrative embodiment, the reactant gas exiting the gas delivery system is directed so as to cover substantially all of an area defined by an upper surface of the wafer. In one illustrative embodiment, the method comprises positioning a wafer in a process chamber of a deposition tool, generating a plasma within the process chamber above the wafer, and forming a layer of material above the wafer by introducing substantially all of a reactant gas used to form the layer of material into the process chamber above the plasma via a gas delivery system positioned above the plasma. In another illustrative embodiment, the reactant gas exiting the gas delivery system is directed to cover substantially all of an area defined by an upper surface of the wafer.
摘要翻译：本发明一般涉及用于各种沉积工艺的新型气体输送系统及其使用方法。在一个说明性实施例中，沉积工具包括处理室，适于保持位于其中的晶片的晶片台，以及定位在室中的气体输送系统，其位于室内将产生等离子体的位置，其中基本上全部反应气体通过气体输送系统输送到室中。在另一说明性实施例中，离开气体输送系统的反应物气体被引导以覆盖由晶片的上表面限定的基本上所有的区域。在一个示例性实施例中，该方法包括将晶片定位在沉积工具的处理室中，在晶片上方的处理室内产生等离子体，并且通过将基本上所有的反应气体基本上引入到通过位于等离子体上方的气体输送系统将材料层形成在等离子体上方的处理室中。在另一示例性实施例中，离开气体输送系统的反应物气体被引导以覆盖由晶片的上表面限定的基本上所有的区域。

2. 发明申请

US20060218762A1 SYSTEM AND METHOD FOR DETECTING FLOW IN A MASS FLOW CONTROLLER 审中-公开
公开(公告)号：US20060218762A1
公开(公告)日：2006-10-05
申请号：US11421701
申请日：2006-06-01
申请人： Gurtej Sandhu , Sujit Sharan , Neal Rueger , Allen Mardian
发明人： Gurtej Sandhu , Sujit Sharan , Neal Rueger , Allen Mardian
IPC分类号： H01L21/00 , H01L21/306 , C23C16/00
CPC分类号： G01F1/40 , G01F1/42 , G01P13/0006 , G01P13/0013 , G01P13/0033 , G05D7/0635 , Y10T137/0396 , Y10T137/7722 , Y10T137/775 , Y10T137/8242
摘要： Systems and methods are provided for detecting flow in a mass flow controller (MFC). The position of a gate in the MFC is sensed or otherwise determined to monitor flow through the MFC and to immediately or nearly immediately detect a flow failure. In one embodiment of the present invention, a novel MFC is provided. The MFC includes an orifice, a mass flow control gate, an actuator and a gate position sensor. The actuator moves the control gate to control flow through the orifice. The gate position sensor determines the gate position and/or gate movement to monitor flow and immediately or nearly immediately detect a flow failure. According to one embodiment of the present invention, the gate position sensor includes a transmitter for transmitting a signal and a receiver for receiving the signal such that the receiver provides an indication of the position of the gate based on the signal received. Other embodiments of the gate position sensor are described herein, as well as systems and methods that incorporate the novel MFC within a semiconductor manufacturing process.

3. 发明申请

US20050121088A1 Semiconductor processing reactive precursor valve assembly 失效
公开(公告)号：US20050121088A1
公开(公告)日：2005-06-09
申请号：US11034015
申请日：2005-01-11
申请人： Ross Dando , Gurtej Sandhu , Allen Mardian
发明人： Ross Dando , Gurtej Sandhu , Allen Mardian
IPC分类号： C23C16/44 , C23C16/452 , C23C16/455 , C30B25/10 , C30B25/14 , F16K11/072
CPC分类号： C30B25/14 , C23C16/452 , C23C16/45536 , C23C16/45542 , C23C16/45544 , C23C16/45561 , C30B25/105 , Y10S118/90 , Y10T137/86839 , Y10T137/86863
摘要： The invention includes chemical vapor deposition methods, including atomic layer deposition, and valve assemblies for use with a reactive precursor in semiconductor processing. In one implementation, a chemical vapor deposition method includes positioning a semiconductor substrate within a chemical vapor deposition chamber. A first deposition precursor is fed to a remote plasma generation chamber positioned upstream of the deposition chamber, and a plasma is generated therefrom within the remote chamber and effective to form a first active deposition precursor species. The first species is flowed to the deposition chamber. During the flowing, flow of at least some of the first species is diverted from entering the deposition chamber while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber. At some point, diverting is ceased while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber. Other aspects and implementations are contemplated.

4. 发明申请

US20060223204A1 SYSTEM AND METHOD FOR DETECTING FLOW IN A MASS FLOW CONTROLLER 审中-公开
公开(公告)号：US20060223204A1
公开(公告)日：2006-10-05
申请号：US11421704
申请日：2006-06-01
申请人： Gurtej Sandhu , Sujit Sharan , Neal Rueger , Allen Mardian
发明人： Gurtej Sandhu , Sujit Sharan , Neal Rueger , Allen Mardian
IPC分类号： H01L21/66 , G01R31/26
CPC分类号： G01F1/40 , G01F1/42 , G01P13/0006 , G01P13/0013 , G01P13/0033 , G05D7/0635 , Y10T137/0396 , Y10T137/7722 , Y10T137/775 , Y10T137/8242
摘要： Systems and methods are provided for detecting flow in a mass flow controller (MFC). The position of a gate in the MFC is sensed or otherwise determined to monitor flow through the MFC and to immediately or nearly immediately detect a flow failure. In one embodiment of the present invention, a novel MFC is provided. The MFC includes an orifice, a mass flow control gate, an actuator and a gate position sensor. The actuator moves the control gate to control flow through the orifice. The gate position sensor determines the gate position and/or gate movement to monitor flow and immediately or nearly immediately detect a flow failure. According to one embodiment of the present invention, the gate position sensor includes a transmitter for transmitting a signal and a receiver for receiving the signal such that the receiver provides an indication of the position of the gate based on the signal received. Other embodiments of the gate position sensor are described herein, as well as systems and methods that incorporate the novel MFC within a semiconductor manufacturing process.

5. 发明申请

US20060219031A1 SYSTEM AND METHOD FOR DETECTING FLOW IN A MASS FLOW CONTROLLER 审中-公开
公开(公告)号：US20060219031A1
公开(公告)日：2006-10-05
申请号：US11421696
申请日：2006-06-01
申请人： Gurtej Sandhu , Sujit Sharan , Neal Rueger , Allen Mardian
发明人： Gurtej Sandhu , Sujit Sharan , Neal Rueger , Allen Mardian
IPC分类号： G01N19/00
CPC分类号： G01F1/40 , G01F1/42 , G01P13/0006 , G01P13/0013 , G01P13/0033 , G05D7/0635 , Y10T137/0396 , Y10T137/7722 , Y10T137/775 , Y10T137/8242
摘要： Systems and methods are provided for detecting flow in a mass flow controller (MFC). The position of a gate in the MFC is sensed or otherwise determined to monitor flow through the MFC and to immediately or nearly immediately detect a flow failure. In one embodiment of the present invention, a novel MFC is provided. The MFC includes an orifice, a mass flow control gate, an actuator and a gate position sensor. The actuator moves the control gate to control flow through the orifice. The gate position sensor determines the gate position and/or gate movement to monitor flow and immediately or nearly immediately detect a flow failure. According to one embodiment of the present invention, the gate position sensor includes a transmitter for transmitting a signal and a receiver for receiving the signal such that the receiver provides an indication of the position of the gate based on the signal received. Other embodiments of the gate position sensor are described herein, as well as systems and methods that incorporate the novel MFC within a semiconductor manufacturing process.

6. 发明申请

US20060236513A1 SYSTEM AND METHOD FOR DETECTING FLOW IN A MASS FLOW CONTROLLER 失效
标题翻译：用于检测流量控制器中的流量的系统和方法
公开(公告)号：US20060236513A1
公开(公告)日：2006-10-26
申请号：US11456055
申请日：2006-07-06
申请人： Gurtej Sandhu , Sujit Sharan , Neal Rueger , Allen Mardian
发明人： Gurtej Sandhu , Sujit Sharan , Neal Rueger , Allen Mardian
IPC分类号： H01L21/66 , F17D3/00 , F16K37/00 , G01B7/00
CPC分类号： G01F1/40 , G01F1/42 , G01P13/0006 , G01P13/0013 , G01P13/0033 , G05D7/0635 , Y10T29/41 , Y10T137/0396 , Y10T137/7722 , Y10T137/775 , Y10T137/8242
摘要： Systems and methods are provided for detecting flow in a mass flow controller (MFC). The position of a gate in the MFC is sensed or otherwise determined to monitor flow through the MFC and to immediately or nearly immediately detect a flow failure. In one embodiment of the present invention, a novel MFC is provided. The MFC includes an orifice, a mass flow control gate, an actuator and a gate position sensor. The actuator moves the control gate to control flow through the orifice. The gate position sensor determines the gate position and/or gate movement to monitor flow and immediately or nearly immediately detect a flow failure. According to one embodiment of the present invention, the gate position sensor includes a transmitter for transmitting a signal and a receiver for receiving the signal such that the receiver provides an indication of the position of the gate based on the signal received. Other embodiments of the gate position sensor are described herein, as well as systems and methods that incorporate the novel MFC within a semiconductor manufacturing process.
摘要翻译：提供了用于检测质量流量控制器（MFC）中的流量的系统和方法。 MFC中的门的位置被感测或以其他方式确定以监视通过MFC的流动并立即或几乎立即检测到流动故障。在本发明的一个实施例中，提供了一种新颖的MFC。 MFC包括孔口，质量流量控制门，致动器和门位置传感器。致动器移动控制门以控制通过孔口的流动。门位置传感器确定门位置和/或门移动以监视流量并立即或几乎立即检测到流动故障。根据本发明的一个实施例，门位置传感器包括用于发送信号的发射机和用于接收信号的接收机，使得接收机基于所接收的信号提供门的位置的指示。这里描述了门位置传感器的其他实施例，以及在半导体制造过程中并入新颖的MFC的系统和方法。

7. 发明申请

US20070062465A1 Methods of operating a liquid vaporizer 失效
标题翻译：操作液体蒸发器的方法
公开(公告)号：US20070062465A1
公开(公告)日：2007-03-22
申请号：US11198560
申请日：2004-08-10
申请人： Ross Dando , Allen Mardian , Raynald Cantin , Gurtej Sandhu
发明人： Ross Dando , Allen Mardian , Raynald Cantin , Gurtej Sandhu
IPC分类号： F22B37/10
CPC分类号： H01L21/6708 , C23C16/4481
摘要： The present invention is generally directed to a vaporizer with positive liquid shut-off. In one illustrative embodiment, the vaporizer is comprised of a body, a liquid inlet and a carrier gas inlet coupled to the body, a nozzle positioned within the body, the nozzle having at least one opening formed therethrough that defines a vaporized liquid exit, and a positive shut-off valve, a portion of which is adapted to engage the vaporized liquid exit of the nozzle. In another illustrative embodiment, the vaporizer is comprised of a body, a liquid inlet and a carrier gas inlet coupled to-the body and a plurality of peltier cells coupled to the body.
摘要翻译：本发明一般涉及具有正液体截止的汽化器。在一个说明性实施例中，蒸发器包括主体，液体入口和连接到主体的载气入口，位于主体内的喷嘴，喷嘴具有限定蒸发的液体出口的至少一个通过其形成的开口，以及正截止阀，其一部分适于接合喷嘴的汽化液体出口。在另一示例性实施例中，蒸发器包括主体，液体入口和连接到主体的载气入口以及耦合到主体的多个珀耳帖细胞。

8. 发明申请

US20050011974A1 Methods of operating a liquid vaporizer 失效
标题翻译：操作液体蒸发器的方法
公开(公告)号：US20050011974A1
公开(公告)日：2005-01-20
申请号：US10917640
申请日：2004-08-13
申请人： Ross Dando , Allen Mardian , Raynald Cantin , Gurtej Sandhu
发明人： Ross Dando , Allen Mardian , Raynald Cantin , Gurtej Sandhu
IPC分类号： C23C16/448 , F02M25/025 , F02M25/032 , H01L21/00 , B05B1/30
CPC分类号： H01L21/6708 , C23C16/4481
摘要： The present invention is generally directed to a vaporizer with positive liquid shut-off. In one illustrative embodiment, the vaporizer is comprised of a body, a liquid inlet and a carrier gas inlet coupled to the body, a nozzle positioned within the body, the nozzle having at least one opening formed therethrough that defines a vaporized liquid exit, and a positive shut-off valve, a portion of which is adapted to engage the vaporized liquid exit of the nozzle. In another illustrative embodiment, the vaporizer is comprised of a body, a liquid inlet and a carrier gas inlet coupled to the body and a plurality of peltier cells coupled to the body.
摘要翻译：本发明一般涉及具有正液体截止的汽化器。在一个说明性实施例中，蒸发器包括主体，液体入口和连接到主体的载气入口，位于主体内的喷嘴，喷嘴具有限定蒸发的液体出口的至少一个通过其形成的开口，以及正截止阀，其一部分适于接合喷嘴的汽化液体出口。在另一个说明性实施例中，蒸发器包括主体，液体入口和连接到主体的载气入口以及耦合到主体的多个珀耳帖细胞。

9. 发明申请

US20060027326A1 Semiconductor substrate processing chamber and substrate transfer chamber interfacial structure 审中-公开
标题翻译：半导体衬底处理室和衬底转移室界面结构
公开(公告)号：US20060027326A1
公开(公告)日：2006-02-09
申请号：US11208964
申请日：2005-08-22
申请人： Craig Carpenter , Ross Dando , Allen Mardian , Kevin Hamer , Raynald Cantin , Philip Campbell , Kimberly Tschepen , Randy Mercil
发明人： Craig Carpenter , Ross Dando , Allen Mardian , Kevin Hamer , Raynald Cantin , Philip Campbell , Kimberly Tschepen , Randy Mercil
IPC分类号： C23F1/00
CPC分类号： H01L21/67126 , C23C16/4409 , C23C16/54 , Y10S414/139
摘要： A semiconductor substrate processor includes a substrate transfer chamber and a plurality of substrate processing chambers connected therewith. An interfacial structure is received between at least one of the processing chambers and the transfer chamber. The interfacial structure includes a substantially non-metallic, thermally insulative mass of material interposed between the one processing chamber and the transfer chamber. The mass is of sufficient volume to effectively reduce heat transfer from the processing chamber to the transfer chamber than would otherwise occur in the absence of said mass of material. An interfacial structure includes a body having a substrate passageway extending therethrough. The passageway includes walls at least a portion of which are substantially metallic. The body includes material peripheral of the walls which is substantially non-metallic and thermally insulative. The substantially non-metallic material has mounting openings extending at least partially therein.
摘要翻译：半导体衬底处理器包括衬底传送室和与之连接的多个衬底处理室。在至少一个处理室和传送室之间接收界面结构。界面结构包括插入在一个处理室和传送室之间的基本上非金属的绝热材料块。质量足够的体积以有效地减少从处理室到传送室的传热比否则不存在所述材料块的情况。界面结构包括具有延伸穿过其中的基底通道的主体。该通道包括其至少一部分基本上是金属的壁。主体包括基本上非金属和热绝缘的壁的材料周边。基本上非金属材料具有其中至少部分延伸的安装开口。

10. 发明申请

US20050142291A1 Chemical vapor deposition methods 审中-公开
标题翻译：化学气相沉积法
公开(公告)号：US20050142291A1
公开(公告)日：2005-06-30
申请号：US11062571
申请日：2005-02-22
申请人： Ross Dando , Philip Campbell , Craig Carpenter , Allen Mardian
发明人： Ross Dando , Philip Campbell , Craig Carpenter , Allen Mardian
IPC分类号： C23C16/44 , C23C16/00
CPC分类号： C23C16/4405 , C23C16/4412
摘要： A chemical vapor deposition chamber has a vacuum exhaust line extending therefrom. Material is deposited over a first plurality of substrates within the deposition chamber under conditions effective to deposit effluent product over internal walls of the vacuum exhaust line. At least a portion of the vacuum exhaust line is isolated from the deposition chamber. While isolating, a cleaning fluid is flowed to the vacuum exhaust line effective to at least reduce thickness of the effluent product over the internal walls within the vacuum exhaust line from what it was prior to initiating said flowing. After said flowing, the portion of the vacuum exhaust line, and the deposition chamber are provided in fluid communication with one another and material is deposited over a second plurality of substrates within the deposition chamber under conditions effective to deposit effluent product over internal walls of the vacuum exhaust line.
摘要翻译：化学气相沉积室具有从其延伸的真空排气管。在有效地将流出物产物沉积在真空排气管的内壁上的条件下，材料沉积在沉积室内的第一组多个衬底上。真空排气管线的至少一部分与沉积室隔离。在分离时，清洁流体流到真空排气管线，有效地至少将真空排气管内的内壁上的流出物的厚度从起始流动之前的厚度减小到最小。在所述流动之后，真空排气管线的部分和沉积室彼此流体连通地设置，并且在有效地将流出物产物沉积在沉积物的内壁上的条件下，在沉积室内的第二多个基板上沉积材料真空排气管。

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