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    • 1. 发明申请
    • Atomic layer deposition methods
    • 原子层沉积法
    • US20060251815A1
    • 2006-11-09
    • US11484978
    • 2006-07-11
    • Kevin HamerPhilip CampbellDanny DynkaMatthew Meyers
    • Kevin HamerPhilip CampbellDanny DynkaMatthew Meyers
    • C23C16/00
    • C23C16/45544C23C16/52
    • The invention includes atomic layer deposition methods and apparatus. In one implementation, an atomic layer deposition apparatus includes a processing chamber, the chamber having an inlet and an outlet; a vacuum source in fluid communication with the outlet; a final valve moveable between an open position and a closed position and having an outlet in fluid communication with the inlet of the chamber and having an inlet; a dump line having an inlet in fluid communication with the inlet of the final valve, the dump line further having an outlet; a safety valve having an outlet in fluid communication with the inlet of the dump line and the inlet of the final valve, the safety valve having an inlet configured to be placed in fluid communication with a fluid source; and an automatic pressure controller in the dump line, between the inlet of the dump line and the outlet of the dump line, and configured to maintain pressure in the dump line at a predetermined pressure at least during a time when the final valve is in the closed position. Other methods and apparatus are provided.
    • 本发明包括原子层沉积方法和装置。 在一个实施方案中,原子层沉积设备包括处理室,所述室具有入口和出口; 与出口流体连通的真空源; 最终阀可在打开位置和关闭位置之间移动并且具有与所述室的入口流体连通并具有入口的出口; 倾倒线,其具有与最终阀的入口流体连通的入口,所述倾倒线还具有出口; 安全阀,其具有与所述倾倒管线的入口和所述最终阀的入口流体连通的出口,所述安全阀具有被配置为与流体源流体连通的入口; 以及卸料管线中的自动压力控制器,在转储管线的入口和倾倒管线的出口之间,并且构造成至少在最终阀门处于 关闭位置。 提供其他方法和装置。
    • 6. 发明申请
    • Chemical vapor deposition apparatus and methods
    • 化学气相沉积装置及方法
    • US20050098105A1
    • 2005-05-12
    • US10704315
    • 2003-11-06
    • Jeff FussKevin HamerZhiping Yin
    • Jeff FussKevin HamerZhiping Yin
    • C23C16/44C23C16/00H05H1/24
    • H01J37/3244C23C16/4404C23C16/4405
    • This invention includes chemical vapor deposition apparatus, methods of chemical vapor depositing an amorphous carbon comprising layer on a substrate, and methods of chemical vapor depositing at least one of Si3N4 and SixOyNz on a substrate. In certain implementations, a gas output manifold having at least one gas output to a deposition chamber and at least three gas inputs is utilized. In certain implementations, a remote plasma generator is utilized. In certain implementations, at least one cleaning gas input line feeds the remote plasma generator. In certain implementations, the at least one cleaning gas input line includes an amorphous carbon cleaning gas input and an Si3N4 or SixOyNz cleaning gas input.
    • 本发明包括化学气相沉积装置,在衬底上化学气相沉积无定形碳的层的方法,以及化学气相沉积Si 3 N 4 N 3中的至少一种的方法, 和基底上的Si x O x N z N z z。 在某些实施方案中,利用具有至少一个气体输出到沉积室和至少三个气体输入的气体输出歧管。 在某些实施方案中,利用远程等离子体发生器。 在某些实施方案中,至少一个清洁气体输入管线馈送远程等离子体发生器。 在某些实施方案中,所述至少一个清洁气体输入管线包括无定形碳清洁气体输入端和Si 3 N 4 N 4或Si x O 清洁气体输入。
    • 7. 发明申请
    • Gas delivery system for deposition processes, and methods of using same
    • 用于沉积工艺的气体输送系统及其使用方法
    • US20050011449A1
    • 2005-01-20
    • US10916918
    • 2004-08-12
    • Weimin LiNeal RuegerLi LiRoss DandoKevin HamerAllen MardianGurtej Sandhu
    • Weimin LiNeal RuegerLi LiRoss DandoKevin HamerAllen MardianGurtej Sandhu
    • C23C16/44C23C16/455C23C16/507C23C16/00
    • C23C16/45565C23C16/455C23C16/507
    • The present invention is generally directed to a novel gas delivery system for various deposition processes, and various methods of using same. In one illustrative embodiment, a deposition tool comprises a process chamber, a wafer stage adapted for holding a wafer positioned therein, and a gas delivery system positioned in the chamber above a position where a plasma will be generated in the chamber, wherein substantially all of a reactant gas is delivered into the chamber via the gas delivery system. In another illustrative embodiment, the reactant gas exiting the gas delivery system is directed so as to cover substantially all of an area defined by an upper surface of the wafer. In one illustrative embodiment, the method comprises positioning a wafer in a process chamber of a deposition tool, generating a plasma within the process chamber above the wafer, and forming a layer of material above the wafer by introducing substantially all of a reactant gas used to form the layer of material into the process chamber above the plasma via a gas delivery system positioned above the plasma. In another illustrative embodiment, the reactant gas exiting the gas delivery system is directed to cover substantially all of an area defined by an upper surface of the wafer.
    • 本发明一般涉及用于各种沉积工艺的新型气体输送系统及其使用方法。 在一个说明性实施例中,沉积工具包括处理室,适于保持位于其中的晶片的晶片台,以及定位在室中的气体输送系统,其位于室内将产生等离子体的位置,其中基本上全部 反应气体通过气体输送系统输送到室中。 在另一说明性实施例中,离开气体输送系统的反应物气体被引导以覆盖由晶片的上表面限定的基本上所有的区域。 在一个示例性实施例中,该方法包括将晶片定位在沉积工具的处理室中,在晶片上方的处理室内产生等离子体,并且通过将基本上所有的反应气体基本上引入到 通过位于等离子体上方的气体输送系统将材料层形成在等离子体上方的处理室中。 在另一示例性实施例中,离开气体输送系统的反应物气体被引导以覆盖由晶片的上表面限定的基本上所有的区域。