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1. 发明授权

US06391916B1 Enediyne derivatives 有权
标题翻译：恩代尼衍生物
公开(公告)号：US06391916B1
公开(公告)日：2002-05-21
申请号：US09621517
申请日：2000-07-21
申请人： Wei-Min Dai , Anxin Wu , Yuk Ha Lee , Wataru Hamaguchi , Sei-ichi Nishimoto , Ling Zhou , Atsushi Ishii
发明人： Wei-Min Dai , Anxin Wu , Yuk Ha Lee , Wataru Hamaguchi , Sei-ichi Nishimoto , Ling Zhou , Atsushi Ishii
IPC分类号： A61K31216
CPC分类号： C07D307/79 , C07C35/21 , C07C43/188 , C07C43/23 , C07C69/013 , C07C69/24 , C07C69/708 , C07C69/712 , C07C69/734 , C07C69/76 , C07C69/92 , C07C2601/18 , C07C2603/24 , C07F7/1804
摘要： Novel C3-substituted cyclodeca-1,5-diynes can be prepared through novel synthetic procedures using starting (E)-C3-substituted-4-(aryl- or heteroarylmethylidene)cyclodeca-1,5-diynes reagents. Both the C3-substituted cyclodeca-1,5-diyn-3-enes and the starting reagents have improved thermal stability compared to unsubstituted counterparts.
摘要翻译：通过使用起始（E）-C3-取代-4-（芳基或杂芳基亚甲基）环癸烷-1,5-二炔试剂的新的合成方法，可以制备新的C3-取代的环癸-1,5-二炔。与未取代的对应物相比，C3取代的环癸-1,5-二炔-3-烯和起始试剂都具有改善的热稳定性。

2. 发明授权

US08973419B2 Rolling mill and method of zero adjustment of rolling mill 有权
标题翻译：轧机零位调整方法
公开(公告)号：US08973419B2
公开(公告)日：2015-03-10
申请号：US13581683
申请日：2011-04-11
申请人： Daisuke Kasai , Atsushi Ishii , Shigeru Ogawa
发明人： Daisuke Kasai , Atsushi Ishii , Shigeru Ogawa
IPC分类号： B21B37/58 , B21B38/08 , B21B38/10
CPC分类号： B21B37/58 , B21B38/105
摘要： The present invention discovers that a rolling direction force occurs even with conventional adjustment by the kiss roll state, pinpoints that the rolling direction force does not affect the roll thrust force, and thereby enables more precise initial roll gap position adjustment of a rolling mill (rolling zero adjustment).That is, this is based on the fact that high precision rolling zero adjustment becomes possible without being affected by any thrust force acting between rolls if performing differential asymmetrical roll gap zero point adjustment of the work side and the drive side so that the difference of the rolling direction forces acting on the roll chocks of the work side and the drive side of the work roll at the work side and the drive side (in practice, within ±5% of the sum of the rolling direction forces at the work side and the drive side).
摘要翻译：本发明发现即使通过接触辊状态的常规调整也发生轧制方向力，指出轧制方向力不影响轧辊推力，从而能够实现轧机的更精确的初始轧辊间隙位置调整（轧制零调整）。也就是说，这是基于以下事实：如果执行工作侧和驱动侧的差分不对称辊隙零点调整，则不会受到在辊之间作用的任何推力的影响而实现高精度滚动零点调整，使得作用在工作侧的辊轴承座和工作辊的驱动侧的工作侧和驱动侧的轧制方向力（实际上在工作侧的轧制方向力的总和的±5％以内驱动侧）。

3. 发明授权

US08829679B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08829679B2
公开(公告)日：2014-09-09
申请号：US13534844
申请日：2012-06-27
申请人： Hiroyuki Chibahara , Atsushi Ishii , Naoki Izumi , Masahiro Matsumoto
发明人： Hiroyuki Chibahara , Atsushi Ishii , Naoki Izumi , Masahiro Matsumoto
IPC分类号： H01L23/48
CPC分类号： H01L23/02 , H01L23/522 , H01L23/585 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device wherein destruction of a sealing ring caused by cracking of an interlayer dielectric film is difficult to occur, as well as a method for manufacturing the semiconductor device, are provided. A first laminate comprises first interlayer dielectric films having a first mechanical strength. A second laminate comprises second interlayer dielectric films having a mechanical strength higher than the first mechanical strength. A first region includes first metallic layers and vias provided within the first laminate. A second region includes second metallic layers and vias provided within the second laminate. When seen in plan, the second region overlaps at least a part of the first region, is not coupled with the first region by vias, and sandwiches the second interlayer dielectric film between it and the first region.
摘要翻译：提供了难以发生由层间电介质膜的破裂引起的密封环破坏的半导体装置，以及半导体装置的制造方法。第一层压板包括具有第一机械强度的第一层间绝缘膜。第二层压体包括具有高于第一机械强度的机械强度的第二层间介电膜。第一区域包括设置在第一层压体内的第一金属层和通孔。第二区域包括设置在第二层压体内的第二金属层和通孔。当在平面图中看到时，第二区域与第一区域的至少一部分重叠，不通过通孔与第一区域耦合，并且在其与第一区域之间夹住第二层间电介质膜。

4. 发明授权

US08621906B2 Rolling mill and rolling method for flat products of steel 有权
标题翻译：轧钢机轧制方法钢材平板产品
公开(公告)号：US08621906B2
公开(公告)日：2014-01-07
申请号：US12736113
申请日：2009-02-24
申请人： Shigeru Ogawa , Atsushi Ishii , Daisuke Kasai
发明人： Shigeru Ogawa , Atsushi Ishii , Daisuke Kasai
IPC分类号： B21B13/14 , B21B29/00
CPC分类号： B21B13/145 , B21B29/00
摘要： The object is to strictly eliminate the difference in offset of work rolls at the upper and lower and left and right of the rolling mill occurring in the kiss roll state before rolling or during rolling and eliminate the problem of warping of the flat products or meander or camber due to the thrust force acting between the work rolls and backup rolls.For this, there are provided a rolling mill for flat products having a pair of upper and lower work rolls driven by electric motors, a pair of upper and lower backup rolls, and devices for applying substantially horizontal direction external forces to barrels or shafts of the work rolls at positions of at least one location each at the work side and drive side, for the respective upper and lower work rolls, from the entrance side or exit side of the rolling mill, the external forces being supported through work roll chocks by project blocks of the rolling mill housing or work roll chock support members connected to backup roll chocks, and the value of the rolling direction offset of the work roll axial center position and backup roll axial center position divided by the sum of the work roll radius and backup roll radius being 0.0025 or less for both the upper and lower rolls, and a rolling method for flat products using the same.
摘要翻译：本发明的目的是严格地消除轧制前或轧制过程中在轧辊状态下出现的轧机上下左右的工作轧辊的偏移差异，并且消除了扁平产品或曲折的翘曲问题由于作用在工作辊和支承辊之间的推力而产生弯度。为此，提供了一种用于平板产品的轧机，其具有由电动机驱动的一对上下工作辊，一对上支撑辊和下支撑辊，以及用于将基本上水平方向的外力施加到桶的轴或杆的装置在轧机的入口侧或出口侧，对于各自的上下工作辊，在工作侧和驱动侧的至少一个位置的位置上进行工作轧辊，外力通过工程轧辊轴承座支撑轧机机架或工作辊轴承座与支承辊轴承座连接的块，工作辊轴向中心位置和支承辊轴中心位置的滚动方向偏移值除以工作辊半径和备用总和之和上辊和下辊的辊半径为0.0025或更小，以及使用该辊的平面产品的轧制方法。

5. 发明授权

US08416920B2 Target for X-ray generation, X-ray generator, and method for producing target for X-ray generation 有权
标题翻译：用于X射线产生的目标，X射线发生器和用于产生X射线靶的靶的方法
公开(公告)号：US08416920B2
公开(公告)日：2013-04-09
申请号：US12871192
申请日：2010-08-30
申请人： Katsuya Okumura , Katsuji Kadosawa , Tomofumi Kiyomoto , Motohiro Suyama , Atsushi Ishii
发明人： Katsuya Okumura , Katsuji Kadosawa , Tomofumi Kiyomoto , Motohiro Suyama , Atsushi Ishii
IPC分类号： H01J35/08
CPC分类号： H01J35/12 , H01J2235/081 , H01J2235/083 , H01J2235/087 , H01J2235/1204 , H01J2235/1291
摘要： A target for X-ray generation has a substrate and a target portion. The substrate is comprised of diamond and has a first principal surface and a second principal surface opposed to each other. A bottomed hole is formed from the first principal surface side in the substrate. The target portion is comprised of a metal deposited from a bottom surface of the hole toward the first principal surface. An entire side surface of the target portion is in close contact with an inside surface of the hole.
摘要翻译：用于X射线产生的靶具有基底和目标部分。衬底由金刚石构成，并具有彼此相对的第一主表面和第二主表面。从基板的第一主面侧形成有底孔。目标部分由从孔的底表面朝向第一主表面沉积的金属构成。目标部分的整个侧表面与孔的内表面紧密接触。

6. 发明申请

US20120267793A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120267793A1
公开(公告)日：2012-10-25
申请号：US13534844
申请日：2012-06-27
申请人： Hiroyuki Chibahara , Atsushi Ishii , Naoki Izumi , Masahiro Matsumoto
发明人： Hiroyuki Chibahara , Atsushi Ishii , Naoki Izumi , Masahiro Matsumoto
IPC分类号： H01L23/498
CPC分类号： H01L23/02 , H01L23/522 , H01L23/585 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device wherein destruction of a sealing ring caused by cracking of an interlayer dielectric film is difficult to occur, as well as a method for manufacturing the semiconductor device, are provided. A first laminate comprises first interlayer dielectric films having a first mechanical strength. A second laminate comprises second interlayer dielectric films having a mechanical strength higher than the first mechanical strength. A first region includes first metallic layers and vias provided within the first laminate. A second region includes second metallic layers and vias provided within the second laminate. When seen in plan, the second region overlaps at least a part of the first region, is not coupled with the first region by vias, and sandwiches the second interlayer dielectric film between it and the first region.
摘要翻译：提供了难以发生由层间电介质膜的破裂引起的密封环破坏的半导体装置，以及半导体装置的制造方法。第一层压板包括具有第一机械强度的第一层间绝缘膜。第二层压体包括具有高于第一机械强度的机械强度的第二层间介电膜。第一区域包括设置在第一层压体内的第一金属层和通孔。第二区域包括设置在第二层压体内的第二金属层和通孔。当在平面图中看到时，第二区域与第一区域的至少一部分重叠，不通过通孔与第一区域耦合，并且在其与第一区域之间夹住第二层间电介质膜。

7. 发明申请

US20120032323A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120032323A1
公开(公告)日：2012-02-09
申请号：US13264120
申请日：2009-04-30
申请人： Masahiro Matsumoto , Masahiko Fujisawa , Akihiro Osaki , Atsushi Ishii
发明人： Masahiro Matsumoto , Masahiko Fujisawa , Akihiro Osaki , Atsushi Ishii
IPC分类号： H01L23/48 , H01L21/768 , H01L23/52 , H01L21/60
CPC分类号： H01L23/49503 , H01L21/76801 , H01L21/76807 , H01L21/76811 , H01L21/76832 , H01L23/3128 , H01L23/3192 , H01L23/5329 , H01L23/53295 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/16 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/97 , H01L2224/02126 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/1147 , H01L2224/13022 , H01L2224/13099 , H01L2224/16225 , H01L2224/32014 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48228 , H01L2224/48247 , H01L2224/48465 , H01L2224/48599 , H01L2224/73204 , H01L2224/73253 , H01L2224/92 , H01L2224/92247 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01052 , H01L2924/01057 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/12041 , H01L2924/1306 , H01L2924/15153 , H01L2924/15165 , H01L2924/15311 , H01L2924/16195 , H01L2924/181 , H01L2924/30105 , H01L2224/81 , H01L2224/83 , H01L2224/85 , H01L2924/00 , H01L2224/05556 , H01L2924/3512 , H01L2924/00012 , H01L2924/01004
摘要： A preferred aim of the invention is to provide technique for improving reliability of semiconductor devices when using a low-dielectric-constant film having a lower dielectric constant than a silicon oxide film to a part of an interlayer insulating film. More specifically, to achieve the preferred aim, an interlayer insulating film IL1 forming a first fine layer is formed of a middle-Young's-modulus film, and thus it is possible to separate an integrated high-Young's-modulus layer (a semiconductor substrate 1S and a contact interlayer insulating film CIL) and an interlayer insulating film (a low-Young's-modulus film; a low-dielectric-constant film) IL2 forming a second fine layer not to let them directly contact with each other, and stress can be diverged. As a result, film exfoliation of the interlayer insulating film IL2 formed of a low-Young's-modulus film can be prevented and thus reliability of semiconductor devices can be improved.
摘要翻译：本发明的一个优选目的是提供一种技术，当使用具有比氧化硅膜低的介电常数的低介电常数膜与层间绝缘膜的一部分时，提高半导体器件的可靠性。更具体地，为了实现优选目的，形成第一微细层的层间绝缘膜IL1由中等杨氏模量膜形成，因此可以将集成的高杨氏模量层（半导体基板1S 和接触层间绝缘膜CIL）和形成第二细层的层间绝缘膜（低杨氏模量膜;低介电常数膜）IL2，不使它们彼此直接接触，应力可以是分歧结果，可以防止由低杨氏模量膜形成的层间绝缘膜IL2的膜剥离，从而可以提高半导体器件的可靠性。

8. 发明授权

US08015434B2 Management apparatus, storage system, and storage apparatus management method 有权
标题翻译：管理装置，存储系统和存储装置管理方法
公开(公告)号：US08015434B2
公开(公告)日：2011-09-06
申请号：US12358294
申请日：2009-01-23
申请人： Tsukasa Makino , Tomoaki Tsuruta , Hiroaki Ochi , Marie Abe , Masanori Ito , Koji Ohtsuki , Atsushi Ishii
发明人： Tsukasa Makino , Tomoaki Tsuruta , Hiroaki Ochi , Marie Abe , Masanori Ito , Koji Ohtsuki , Atsushi Ishii
IPC分类号： G06F11/00
CPC分类号： G06F11/079 , G06F11/0727 , G06F11/2089
摘要： There is provided a management apparatus of a storage apparatus. The management apparatus includes an acquisition determination section that determines whether predetermined identification information can be acquired or not from a mounting apparatus that mounts at least one storage apparatus and has at least one predetermined identification information assigned thereto, and a failure determination section that determines, based on a determination result of the acquisition determination section, an access failure to the storage apparatus mounted in the mounting apparatus has been caused due to a failure of the storage apparatus itself or an interruption of a power supply to the mounting apparatus.
摘要翻译：提供一种存储装置的管理装置。管理装置包括：获取判定部，其从安装有至少一个存储装置的安装装置确定是否可以获取预定的识别信息，并且具有至少一个分配给其的预定识别信息;以及故障判定部，其基于根据获取判定部的确定结果，由于存储装置本身的故障或对安装装置的电力供应的中断，引起了安装在安装装置中的存储装置的访问故障。

9. 发明授权

US07935989B2 Single-electron transistor, field-effect transistor, sensor, method for producing sensor, and sensing method 有权
标题翻译：单电子晶体管，场效应晶体管，传感器，传感器的制造方法和传感方法
公开(公告)号：US07935989B2
公开(公告)日：2011-05-03
申请号：US10558063
申请日：2004-05-21
申请人： Kazuhiko Matsumoto , Koichi Mukasa , Atsushi Ishii , Seiji Takeda , Makoto Sawamura , Agus Subagyo , Hirotaka Hosoi , Kazuhisa Sueoka , Hiroshi Kida , Yoshihiro Sakoda
发明人： Kazuhiko Matsumoto , Koichi Mukasa , Atsushi Ishii , Seiji Takeda , Makoto Sawamura , Agus Subagyo , Hirotaka Hosoi , Kazuhisa Sueoka , Hiroshi Kida , Yoshihiro Sakoda
IPC分类号： H01L29/772
CPC分类号： H01L51/0545 , B82Y10/00 , B82Y30/00 , G01N27/4146 , H01L51/0048
摘要： A single-electron transistor comprising at least a substrate, a source electrode and a drain electrode formed on top of the substrate opposing to each other, and a channel arranged between the source electrode is disclosed wherein the channel is composed of ultra fine fibers. By having such a constitution, a sensor can have excellent sensitivity.
摘要翻译：公开了一种单电子晶体管，其包括至少形成在彼此相对的基板的顶部上的基板，源电极和漏电极，以及布置在源电极之间的沟道，其中该沟道由超细纤维构成。通过具有这样的结构，传感器可以具有优异的灵敏度。

10. 发明授权

US07741228B2 Method for fabricating semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07741228B2
公开(公告)日：2010-06-22
申请号：US12059768
申请日：2008-03-31
申请人： Akira Ueki , Takeshi Harada , Atsushi Ishii
发明人： Akira Ueki , Takeshi Harada , Atsushi Ishii
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/7682 , H01L21/76849 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： After a first insulating film is formed on a substrate, a wiring groove is formed in the first insulating film, and then a wire is formed inside the wiring groove. Subsequently, a protection film is formed on the first insulating film and on the wire, and then a hard mask film is formed on the protection film. After that, the hard mask film is patterned. Subsequently, the protection film and the first insulating film are partially removed using the patterned hard mask film to form an air gap groove, and then a second insulating film is formed to close an upper portion of the air gap groove for forming an air gap.
摘要翻译：在基板上形成第一绝缘膜之后，在第一绝缘膜中形成布线槽，然后在布线槽内形成布线。随后，在第一绝缘膜和导线上形成保护膜，然后在保护膜上形成硬掩模膜。之后，硬掩模膜被图案化。随后，使用图案化的硬掩模膜部分地去除保护膜和第一绝缘膜，以形成气隙槽，然后形成第二绝缘膜以封闭用于形成气隙的气隙槽的上部。

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