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    • 1. 再颁专利
    • Light-emitting semiconductor device having enhanced brightness
    • 具有增强的亮度的发光半导体器件
    • USRE44429E1
    • 2013-08-13
    • US11976615
    • 2007-10-25
    • Wei-En ChienChih-Sung ChangTzer-Perng ChenPai-Hsiang Wang
    • Wei-En ChienChih-Sung ChangTzer-Perng ChenPai-Hsiang Wang
    • H01L29/205
    • H01L33/38H01L33/387H01L33/42
    • This invention this invention provides a light-emitting semiconductor device having enhanced brightness, to ensure even current distribution emitted by a front contact of the light emitting diodes so as to improve the light-emitting efficiency of the active layer. This invention adopts the method to manufacture the light-emitting device, comprising the steps of: forming an active layer on a substrate; forming a capping layer on the active layer to enhance current distribution, where a back contact is located on another side of the substrate and a front contact is located above the capping layer. This invention is characterized by: re-designing the front contact, by reducing the width of a metallic pattern constructing fingers or Mesh lines and increasing the number of the fingers or Mesh lines, so as to resolve the current crowding problem.
    • 本发明提供了一种具有增强的亮度的发光半导体器件,以确保由发光二极管的前触点发射的均匀的电流分布,从而提高有源层的发光效率。 本发明采用制造发光器件的方法,包括以下步骤:在衬底上形成有源层; 在有源层上形成覆盖层以增强电流分布,其中背面接触位于衬底的另一侧上,并且前触点位于覆盖层上方。 本发明的特征在于:通过减少构成手指或网格线的金属图案的宽度和增加手指或网格线的数量来重新设计前触点,以便解决当前的拥挤问题。