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    • 5. 再颁专利
    • Light-emitting semiconductor device having enhanced brightness
    • 具有增强的亮度的发光半导体器件
    • USRE44429E1
    • 2013-08-13
    • US11976615
    • 2007-10-25
    • Wei-En ChienChih-Sung ChangTzer-Perng ChenPai-Hsiang Wang
    • Wei-En ChienChih-Sung ChangTzer-Perng ChenPai-Hsiang Wang
    • H01L29/205
    • H01L33/38H01L33/387H01L33/42
    • This invention this invention provides a light-emitting semiconductor device having enhanced brightness, to ensure even current distribution emitted by a front contact of the light emitting diodes so as to improve the light-emitting efficiency of the active layer. This invention adopts the method to manufacture the light-emitting device, comprising the steps of: forming an active layer on a substrate; forming a capping layer on the active layer to enhance current distribution, where a back contact is located on another side of the substrate and a front contact is located above the capping layer. This invention is characterized by: re-designing the front contact, by reducing the width of a metallic pattern constructing fingers or Mesh lines and increasing the number of the fingers or Mesh lines, so as to resolve the current crowding problem.
    • 本发明提供了一种具有增强的亮度的发光半导体器件,以确保由发光二极管的前触点发射的均匀的电流分布,从而提高有源层的发光效率。 本发明采用制造发光器件的方法,包括以下步骤:在衬底上形成有源层; 在有源层上形成覆盖层以增强电流分布,其中背面接触位于衬底的另一侧上,并且前触点位于覆盖层上方。 本发明的特征在于:通过减少构成手指或网格线的金属图案的宽度和增加手指或网格线的数量来重新设计前触点,以便解决当前的拥挤问题。
    • 10. 发明授权
    • LED stack manufacturing method and its structure thereof
    • LED叠层制造方法及其结构
    • US06786390B2
    • 2004-09-07
    • US10357445
    • 2003-02-04
    • Kuang-Neng YangPai-Hsiang WangChih-Sung ChangTzer-Perng Chen
    • Kuang-Neng YangPai-Hsiang WangChih-Sung ChangTzer-Perng Chen
    • B23K3102
    • H01L33/641H01L33/0079
    • A LED stacking manufacturing method and its structure thereof, mainly uses a stacking method to integrate the epitaxial layer and the high-thermal-conductive substrate by twice bonding process, and the converted epitaxial layer of the temporary bonded substrate replaces the epitaxial wafer growth substrate, and the second bonded layer of the etch stop layer of the epitaxial layer is bonded with the second bonded layer of the high-thermal-conductive substrate to form an alloy layer with permanent connection, and then the temporary bonded substrate is removed, such that the process completes the integration of the epitaxial layer and the high-thermal-conductive substrate and makes the ohmic contact layer to face upward to provide a better reliability and efficiency of optical output of the LED.
    • LED堆叠制造方法及其结构主要采用堆叠方法,通过两次接合工艺将外延层与高导热基板结合,临时键合衬底的转换外延层代替外延晶片生长衬底, 并且外延层的蚀刻停止层的第二接合层与高导热基板的第二接合层接合以形成具有永久连接的合金层,然后移除临时键合的基板,使得 工艺完成了外延层和高导热衬底的集成,并使欧姆接触层面向上,以提供更好的LED的光输出的可靠性和效率。