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    • 5. 发明申请
    • NITRIDE SEMICONDUCTOR ULTRAVIOLET LIGHT-EMITTING ELEMENT
    • 氮化物半导体超紫外线发光元件
    • US20130328013A1
    • 2013-12-12
    • US14001342
    • 2011-03-23
    • Tetsuhiko InazuCyril PernotAkira Hirano
    • Tetsuhiko InazuCyril PernotAkira Hirano
    • H01L33/10
    • H01L33/10H01L33/32H01L33/382H01L33/405H01L2933/0016
    • A nitride semiconductor ultraviolet light-emitting element is formed by laminating at least an n-type cladding layer configured of an n-type AlGaN semiconductor layer, an active layer including an AlGaN semiconductor layer having band gap energy of 3.4 eV or larger, and a p-type cladding layer configured of a p-type AlGaN semiconductor layer. A p-type contact layer configured of a p-type AlGaN semiconductor layer that absorbs ultraviolet light emitted from the active layer is formed on the p-type cladding layer. The p-type contact layer has an opening portion penetrating through to a surface of the p-type cladding layer. A p-electrode metal layer that makes Ohmic contact or non-rectifying contact with the p-type contact layer is formed on the p-type contact layer so as not to completely block the opening portion. A reflective metal layer for reflecting the ultraviolet light is formed at least on the opening portion and covers the surface of the p-type cladding layer that is exposed through the opening portion either directly or through a transparent insulating layer that allows the ultraviolet light to pass therethrough.
    • 氮化物半导体紫外线发光元件是通过层叠由n型AlGaN半导体层构成的至少n型包覆层,包含具有3.4eV以上的带隙能量的AlGaN半导体层的有源层,以及 p型覆层,由p型AlGaN半导体层构成。 在p型覆层上形成由p型AlGaN半导体层构成的p型接触层,该p型接触层吸收从有源层发射的紫外线。 p型接触层具有穿透p型包层的表面的开口部。 在p型接触层上形成与p型接触层进行欧姆接触或非整流接触的p电极金属层,以不完全阻挡开口部。 至少在开口部分上形成用于反射紫外光的反射金属层,并且通过开口部分直接或通过允许紫外光通过的透明绝缘层覆盖p型包覆层的表面 通过。
    • 8. 发明授权
    • Filter function-equipped optical sensor and flame sensor
    • 配有滤光功能的光学传感器和火焰传感器
    • US07361948B2
    • 2008-04-22
    • US10550824
    • 2004-03-23
    • Akira HiranoSatoshi KamiyamaHiroshi AmanoIsamu Akasaki
    • Akira HiranoSatoshi KamiyamaHiroshi AmanoIsamu Akasaki
    • H01L31/062
    • G02B5/284
    • In order to provide a filter device capable of maintaining stable optical characteristics for an extended period of time and to provide also a photosensor using the filter device, a photosensor having a filter function includes a filter device having a colored glass filter and configured for permitting transmission of light of a predetermined wavelength range including a detection target wavelength range and a light receiving device for receiving the light transmitted through the filter device. The filter device includes a first interference filter structure comprised of a plurality of light transmitting layers stacked on each other, the first interference filter structure being deposited on a face of the colored glass filter. The light receiving device includes a semiconductor photodetector structure having one or more semiconductor layers, a light receiving area being formed in the one or more semiconductor layers within the semiconductor photodetector structure. The one or more semiconductor layers forming the semiconductor photodetector structure contain InxAlyGa1-x-yN (0≦x≦0.21, 0≦y≦1).
    • 为了提供能够延长长时间保持稳定的光学特性并且还提供使用滤光器装置的光传感器的滤光器装置,具有滤光器功能的光传感器包括具有彩色玻璃滤光器并被配置为允许透射的滤光器装置 包括检测目标波长范围的预定波长范围的光和用于接收透过过滤装置的光的光接收装置。 滤波器装置包括由彼此堆叠的多个透光层组成的第一干涉滤光器结构,第一干涉滤光器结构沉积在着色玻璃滤光片的表面上。 光接收装置包括具有一个或多个半导体层的半导体光电检测器结构,在半导体光电检测器结构内的一个或多个半导体层中形成有光接收区域。 形成半导体光电检测器结构的一个或多个半导体层包含In(x)Al(x,y) ,0 <= y <= 1)。
    • 9. 发明授权
    • Optical transmission circuit
    • 光传输电路
    • US06983085B2
    • 2006-01-03
    • US10358737
    • 2003-02-05
    • Tomoyoshi KataokaAkira HiranoAkihiko Matsuura
    • Tomoyoshi KataokaAkira HiranoAkihiko Matsuura
    • G02F1/035
    • H04B10/505G02F2203/21H04B10/5051H04B10/50575H04B10/564
    • The optical transmission circuit of the present invention has an optical modulator 12 which modulates continuous light at wavelength λo with a signal at repetition frequency fo Hz and outputs alternating phase-inverted pulse light; a bias voltage applying unit 14 which applies a bias voltage to the optical modulator 12; an optical power spectrum measuring unit 17 having frequency resolution of less than fo Hz which measures the optical power spectrum of light output from the optical modulator 12; and a control circuit which controls the bias voltage via the bias voltage applying unit 14 based on measurements of the power spectrum of the output light of the optical modulator 12, so as to minimize the power intensity of the carrier spectrum component of wavelength λo, or to maximize the power intensity of the spectrum component in both side bands.
    • 本发明的光传输电路具有光调制器12,其以重复频率为fHz的信号调制波兰兰波的连续光,并输出交替的相位反转的脉冲光; 偏置电压施加单元14,其向光调制器12施加偏置电压; 光功率谱测量单元17,其具有测量从光调制器12输出的光的光功率谱的小于f Hz的频率分辨率; 以及控制电路,其基于光调制器12的输出光的功率谱的测量,经由偏置电压施加单元14控制偏置电压,以使波长兰波的载流子分量的功率强度最小化,或 以最大化两个边带中的频谱分量的功率强度。