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1. 发明申请

US20140021442A1 NITRIDE SEMICONDUCTOR ULTRAVIOLET LIGHT-EMITTING ELEMENT 有权
标题翻译：氮化物半导体超紫外线发光元件
公开(公告)号：US20140021442A1
公开(公告)日：2014-01-23
申请号：US14009954
申请日：2011-04-21
申请人： Tetsuhiko Inazu , Cyril Pernot , Akira Hirano
发明人： Tetsuhiko Inazu , Cyril Pernot , Akira Hirano
IPC分类号： H01L33/40
CPC分类号： H01L33/405 , H01L33/32
摘要： An active layer including an AlGaN semiconductor layer having a band gap energy of 3.4 eV or higher and a p-type cladding layer configured of a p-type AlGaN semiconductor layer and located above the active layer are formed in a first region on the n-type cladding layer, the first region being in a plane parallel to a surface of the n-cladding layer configured of an n-type AlGaN semiconductor layer. An n-electrode metal layer making Ohmic contact with the n-type cladding layer is formed on an adjacent region to the first region in a second region which is a region other than the first region on the n-type cladding layer. A first reflective metal layer reflecting ultraviolet light emitted from the active layer is formed on a surface of the n-type cladding layer in the second region other than the adjacent region. The n-electrode metal layer is arranged between the first region and a region in which the first reflective metal layer contacts the surface of the n-type cladding layer.
摘要翻译：在n型半导体器件的第1区域形成有包含具有3.4eV以上的带隙能量的AlGaN半导体层和位于有源层上方的p型AlGaN半导体层构成的p型覆层的有源层，所述第一区域在与n型AlGaN半导体层构成的n包层的表面平行的平面内。在与n型包覆层上的第一区域以外的区域的第二区域中，在与第一区域相邻的区域上形成与n型覆层形成欧姆接触的n电极金属层。反射从有源层发射的紫外光的第一反射金属层形成在除了相邻区域之外的第二区域中的n型包覆层的表面上。 n电极金属层配置在第一区域与第一反射金属层与n型包覆层的表面接触的区域之间。

2. 发明授权

US09112115B2 Nitride semiconductor ultraviolet light-emitting element 有权
标题翻译：氮化物半导体紫外线发光元件
公开(公告)号：US09112115B2
公开(公告)日：2015-08-18
申请号：US14009954
申请日：2011-04-21
申请人： Tetsuhiko Inazu , Cyril Pernot , Akira Hirano
发明人： Tetsuhiko Inazu , Cyril Pernot , Akira Hirano
IPC分类号： H01L29/06 , H01L33/40 , H01L33/32
CPC分类号： H01L33/405 , H01L33/32
摘要： An active layer including an AlGaN semiconductor layer having a band gap energy of 3.4 eV or higher and a p-type cladding layer configured of a p-type AlGaN semiconductor layer and located above the active layer are formed in a first region on the n-type cladding layer, the first region being in a plane parallel to a surface of the n-cladding layer configured of an n-type AlGaN semiconductor layer. An n-electrode metal layer making Ohmic contact with the n-type cladding layer is formed on an adjacent region to the first region in a second region which is a region other than the first region on the n-type cladding layer. A first reflective metal layer reflecting ultraviolet light emitted from the active layer is formed on a surface of the n-type cladding layer in the second region other than the adjacent region. The n-electrode metal layer is arranged between the first region and a region in which the first reflective metal layer contacts the surface of the n-type cladding layer.
摘要翻译：在n型半导体器件的第1区域形成有包含具有3.4eV以上的带隙能量的AlGaN半导体层和位于有源层上方的p型AlGaN半导体层构成的p型覆层的有源层，所述第一区域在与n型AlGaN半导体层构成的n包层的表面平行的平面内。在与n型包覆层上的第一区域以外的区域的第二区域中，在与第一区域相邻的区域上形成与n型覆层形成欧姆接触的n电极金属层。反射从有源层发射的紫外光的第一反射金属层形成在除了相邻区域之外的第二区域中的n型包覆层的表面上。 n电极金属层配置在第一区域与第一反射金属层与n型包覆层的表面接触的区域之间。

3. 发明申请

US20130328013A1 NITRIDE SEMICONDUCTOR ULTRAVIOLET LIGHT-EMITTING ELEMENT 有权
标题翻译：氮化物半导体超紫外线发光元件
公开(公告)号：US20130328013A1
公开(公告)日：2013-12-12
申请号：US14001342
申请日：2011-03-23
申请人： Tetsuhiko Inazu , Cyril Pernot , Akira Hirano
发明人： Tetsuhiko Inazu , Cyril Pernot , Akira Hirano
IPC分类号： H01L33/10
CPC分类号： H01L33/10 , H01L33/32 , H01L33/382 , H01L33/405 , H01L2933/0016
摘要： A nitride semiconductor ultraviolet light-emitting element is formed by laminating at least an n-type cladding layer configured of an n-type AlGaN semiconductor layer, an active layer including an AlGaN semiconductor layer having band gap energy of 3.4 eV or larger, and a p-type cladding layer configured of a p-type AlGaN semiconductor layer. A p-type contact layer configured of a p-type AlGaN semiconductor layer that absorbs ultraviolet light emitted from the active layer is formed on the p-type cladding layer. The p-type contact layer has an opening portion penetrating through to a surface of the p-type cladding layer. A p-electrode metal layer that makes Ohmic contact or non-rectifying contact with the p-type contact layer is formed on the p-type contact layer so as not to completely block the opening portion. A reflective metal layer for reflecting the ultraviolet light is formed at least on the opening portion and covers the surface of the p-type cladding layer that is exposed through the opening portion either directly or through a transparent insulating layer that allows the ultraviolet light to pass therethrough.
摘要翻译：氮化物半导体紫外线发光元件是通过层叠由n型AlGaN半导体层构成的至少n型包覆层，包含具有3.4eV以上的带隙能量的AlGaN半导体层的有源层，以及 p型覆层，由p型AlGaN半导体层构成。在p型覆层上形成由p型AlGaN半导体层构成的p型接触层，该p型接触层吸收从有源层发射的紫外线。 p型接触层具有穿透p型包层的表面的开口部。在p型接触层上形成与p型接触层进行欧姆接触或非整流接触的p电极金属层，以不完全阻挡开口部。至少在开口部分上形成用于反射紫外光的反射金属层，并且通过开口部分直接或通过允许紫外光通过的透明绝缘层覆盖p型包覆层的表面通过。

4. 发明授权

US08822976B2 Nitride semiconductor ultraviolet light-emitting element 有权
标题翻译：氮化物半导体紫外线发光元件
公开(公告)号：US08822976B2
公开(公告)日：2014-09-02
申请号：US14001342
申请日：2011-03-23
申请人： Tetsuhiko Inazu , Cyril Pernot , Akira Hirano
发明人： Tetsuhiko Inazu , Cyril Pernot , Akira Hirano
IPC分类号： H01L29/06 , H01L33/40 , H01L33/10 , H01L33/38 , H01L33/32
CPC分类号： H01L33/10 , H01L33/32 , H01L33/382 , H01L33/405 , H01L2933/0016
摘要： A nitride semiconductor ultraviolet light-emitting element is formed by laminating at least an n-type cladding layer configured of an n-type AlGaN semiconductor layer, an active layer including an AlGaN semiconductor layer having band gap energy of 3.4 eV or larger, and a p-type cladding layer configured of a p-type AlGaN semiconductor layer. A p-type contact layer configured of a p-type AlGaN semiconductor layer that absorbs ultraviolet light emitted from the active layer is formed on the p-type cladding layer. The p-type contact layer has an opening portion penetrating through to a surface of the p-type cladding layer. A p-electrode metal layer that makes Ohmic contact or non-rectifying contact with the p-type contact layer is formed on the p-type contact layer so as not to completely block the opening portion. A reflective metal layer for reflecting the ultraviolet light is formed at least on the opening portion and covers the surface of the p-type cladding layer that is exposed through the opening portion either directly or through a transparent insulating layer that allows the ultraviolet light to pass therethrough.
摘要翻译：氮化物半导体紫外线发光元件是通过层叠由n型AlGaN半导体层构成的至少n型包覆层，包含具有3.4eV以上的带隙能量的AlGaN半导体层的有源层，以及 p型覆层，由p型AlGaN半导体层构成。在p型覆层上形成由p型AlGaN半导体层构成的p型接触层，该p型接触层吸收从有源层发射的紫外线。 p型接触层具有穿透p型包层的表面的开口部。在p型接触层上形成与p型接触层进行欧姆接触或非整流接触的p电极金属层，以不完全阻挡开口部。至少在开口部分上形成用于反射紫外光的反射金属层，并且通过开口部分直接或通过允许紫外光通过的透明绝缘层覆盖p型包覆层的表面通过。

5. 发明授权

US09356192B2 Nitride semiconductor ultraviolet light-emitting element 有权
公开(公告)号：US09356192B2
公开(公告)日：2016-05-31
申请号：US14237731
申请日：2011-08-09
申请人： Cyril Pernot , Akira Hirano
发明人： Cyril Pernot , Akira Hirano
IPC分类号： H01L33/00 , H01L33/24 , H01L33/12 , H01L33/32 , H01L33/06 , H01L21/20 , H01L21/02 , H01L33/16 , H01L33/38
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L33/06 , H01L33/12 , H01L33/16 , H01L33/18 , H01L33/24 , H01L33/32 , H01L33/38
摘要： A nitride semiconductor ultraviolet light-emitting element is provided with: an underlying structure portion including a sapphire (0001) substrate and an AlN layer formed on the substrate; and a light-emitting element structure portion including an n-type cladding layer of an n-type AlGaN based semiconductor layer, an active layer having an AlGaN based semiconductor layer, and a p-type cladding layer of a p-type AlGaN based semiconductor layer, formed on the underlying structure portion. The (0001) surface of the substrate is inclined at an off angle which is equal to or greater than 0.6° and is equal to or smaller than 3.0°, and an AlN molar fraction of the n-type cladding layer is equal to or higher than 50%.

6. 发明申请

US20120258286A1 Template for Epitaxial Growth and Process for Producing Same 有权
标题翻译：外延生长模板及其生产方法
公开(公告)号：US20120258286A1
公开(公告)日：2012-10-11
申请号：US13517970
申请日：2009-12-25
申请人： Hiroshi Amano , Satoshi Kamiyama , Myunghee Kim , Cyril Pernot , Akira Hirano
发明人： Hiroshi Amano , Satoshi Kamiyama , Myunghee Kim , Cyril Pernot , Akira Hirano
IPC分类号： C30B25/18 , C30B29/40
CPC分类号： C30B25/183 , C30B25/186 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/0265 , H01L33/007 , Y10T428/24529
摘要： A surface of a sapphire (0001) substrate is processed to form recesses and protrusions so that protrusion tops are flat and a given plane-view pattern is provided. An initial-stage AlN layer is grown on the surface of the sapphire (0001) substrate having recesses and protrusions by performing a C+ orientation control so that a C+ oriented AlN layer is grown on flat surfaces of the protrusion tops, excluding edges, in such a thickness that the recesses are not completely filled and the openings of the recesses are not closed. An AlxGayN(0001) layer (1≧x>0, x+y=1) is epitaxially grown on the initial-stage AlN layer by a lateral overgrowth method. The recesses are covered with the AlxGayN(0001) layer laterally overgrown from above the protrusion tops. Thus, an template for epitaxial growth having a fine and flat surface and a reduced threading dislocation density is produced.
摘要翻译：处理蓝宝石（0001）基板的表面以形成凹部和突起，使得凸起顶部是平坦的，并且提供给定的平面视图图案。通过进行C +取向控制，在具有凹凸的蓝宝石（0001）基板的表面上生长初始阶段的AlN层，使得C +取向的AlN层生长在突出顶部的平坦表面上，不包括边缘凹部未被完全填充且凹部的开口未被封闭的厚度。通过横向过度生长法在初始阶段AlN层上外延生长Al x Ga y N（0001）层（1≥x> 0，x + y = 1）。这些凹槽被从突起顶部上方横向长满的AlxGayN（0001）层覆盖。因此，产生具有细小平坦表面和减少穿透位错密度的外延生长的模板。

7. 发明授权

US09412586B2 Method for producing a template for epitaxial growth having a sapphire (0001) substrate, an initial-stage A1N layer and laterally overgrown A1XGAYN (0001) layer 有权
标题翻译：制备用于外延生长的模板的方法，其具有蓝宝石（0001）衬底，初始阶段A1N层和横向长满的AlXGAYN（0001）层
公开(公告)号：US09412586B2
公开(公告)日：2016-08-09
申请号：US13517970
申请日：2009-12-25
申请人： Hiroshi Amano , Satoshi Kamiyama , Myunghee Kim , Cyril Pernot , Akira Hirano
发明人： Hiroshi Amano , Satoshi Kamiyama , Myunghee Kim , Cyril Pernot , Akira Hirano
IPC分类号： C30B25/18 , H01L21/02 , C30B29/40 , H01L33/00
CPC分类号： C30B25/183 , C30B25/186 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/0265 , H01L33/007 , Y10T428/24529
摘要： A surface of a sapphire (0001) substrate is processed to form recesses and protrusions so that protrusion tops are flat and a given plane-view pattern is provided. An initial-stage AlN layer is grown on the surface of the sapphire (0001) substrate having recesses and protrusions by performing a C+ orientation control so that a C+ oriented AlN layer is grown on flat surfaces of the protrusion tops, excluding edges, in such a thickness that the recesses are not completely filled and the openings of the recesses are not closed. An AlxGayN(0001) layer (1≧x>0, x+y=1) is epitaxially grown on the initial-stage AlN layer by a lateral overgrowth method. The recesses are covered with the AlxGayN(0001) layer laterally overgrown from above the protrusion tops. Thus, an template for epitaxial growth having a fine and flat surface and a reduced threading dislocation density is produced.
摘要翻译：处理蓝宝石（0001）基板的表面以形成凹部和突起，使得凸起顶部是平坦的，并且提供给定的平面视图图案。通过进行C +取向控制，在具有凹凸的蓝宝石（0001）基板的表面上生长初始阶段的AlN层，使得C +取向的AlN层生长在突出顶部的平坦表面上，不包括边缘凹部未被完全填充且凹部的开口未被封闭的厚度。通过横向过度生长法在初始阶段AlN层上外延生长Al x Ga y N（0001）层（1≥x> 0，x + y = 1）。这些凹槽被从突起顶部上方横向长满的AlxGayN（0001）层覆盖。因此，产生具有细小平坦表面和减少穿透位错密度的外延生长的模板。

8. 发明申请

US20140158983A1 NITRIDE SEMICONDUCTOR ULTRAVIOLET LIGHT-EMITTING ELEMENT 有权
标题翻译：氮化物半导体超紫外线发光元件
公开(公告)号：US20140158983A1
公开(公告)日：2014-06-12
申请号：US14237731
申请日：2011-08-09
申请人： Cyril Pernot , Akira Hirano
发明人： Cyril Pernot , Akira Hirano
IPC分类号： H01L33/24 , H01L33/06
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L33/06 , H01L33/12 , H01L33/16 , H01L33/18 , H01L33/24 , H01L33/32 , H01L33/38
摘要： A nitride semiconductor ultraviolet light-emitting element is provided with: an underlying structure portion including a sapphire (0001) substrate and an AlN layer formed on the substrate; and a light-emitting element structure portion including an n-type cladding layer of an n-type AlGaN based semiconductor layer, an active layer having an AlGaN based semiconductor layer, and a p-type cladding layer of a p-type AlGaN based semiconductor layer, formed on the underlying structure portion. The (0001) surface of the substrate is inclined at an off angle which is equal to or greater than 0.6° and is equal to or smaller than 3.0°, and an AlN molar fraction of the n-type cladding layer is equal to or higher than 50%.
摘要翻译：氮化物半导体紫外线发光元件设置有：底层结构部分，包括蓝宝石（0001）基板和形成在基板上的AlN层; 以及包括n型AlGaN基半导体层的n型包覆层，具有AlGaN基半导体层的有源层和p型AlGaN系半导体的p型包层的发光元件结构部分层，形成在下面的结构部分上。衬底的（0001）表面以等于或大于0.6°并且等于或小于3.0°的偏角倾斜，并且n型包覆层的AlN摩尔分数等于或等于超过50％。

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