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    • 2. 发明申请
    • METHOD FOR PRODUCING HOLLOW STRUCTURE
    • 生产中空结构的方法
    • US20110123935A1
    • 2011-05-26
    • US12909329
    • 2010-10-21
    • Wataru KusakiToshinobu Ishihara
    • Wataru KusakiToshinobu Ishihara
    • G03F7/20B32B38/10
    • B32B38/10
    • Provided is a fabrication method with which a laminate having a hollow structure can be produced more easily, while enabling to produce a multilayer structure as well. That is, a method for producing a hollow structure, a fabrication method by stacking-up a structural material among fabrication methods of a hollow structure on a substrate, the method including a step of forming a structural material layer on a substrate, a step of forming a pattern on the structural material layer, a step of forming a sacrificial material layer by burying between the patterns with a water-soluble or an alkaline-soluble polymer as the sacrificial material to be buried between the patterns, a step of further laminating a structural material layer and forming a pattern on the structural material layer laminated, and a step of finally removing the sacrificial material after all of lamination is completed.
    • 提供了一种能够更容易地制造具有中空结构的层叠体的制造方法,同时能够制造多层结构。 也就是说,制造中空结构体的方法,在基材的中空结构体的制造方法中堆叠结构材料的制造方法,该方法包括在基板上形成结构材料层的工序, 在结构材料层上形成图案,通过用水溶性或碱溶性聚合物之间掩埋图案形成牺牲材料层作为待掩埋在图案之间的牺牲材料的步骤,进一步层压 结构材料层并在层压的结构材料层上形成图案,并且完成所有层压之后最后去除牺牲材料的步骤。
    • 3. 发明授权
    • Method for producing hollow structure
    • 中空结构的制造方法
    • US08367311B2
    • 2013-02-05
    • US12909329
    • 2010-10-21
    • Wataru KusakiToshinobu Ishihara
    • Wataru KusakiToshinobu Ishihara
    • G03F7/26
    • B32B38/10
    • Provided is a fabrication method with which a laminate having a hollow structure can be produced more easily, while enabling to produce a multilayer structure as well. That is, a method for producing a hollow structure, a fabrication method by stacking-up a structural material among fabrication methods of a hollow structure on a substrate, the method including; a step of forming a structural material layer on a substrate, a step of forming a pattern on the structural material layer, a step of forming a sacrificial material layer by burying between the patterns with a water-soluble or an alkaline-soluble polymer as the sacrificial material to be buried between the patterns, a step of further laminating a structural material layer and forming a pattern on the structural material layer laminated, and a step of finally removing the sacrificial material after all of lamination is completed.
    • 提供了一种能够更容易地制造具有中空结构的层叠体的制造方法,同时能够制造多层结构。 即,一种中空结构的制造方法,在基板的中空结构的制造方法中堆叠结构材料的制造方法,其特征在于,包括: 在基材上形成结构材料层的步骤,在结构材料层上形成图案的步骤,通过用水溶性或碱溶性聚合物将图案之间埋入形成牺牲材料层的步骤 牺牲材料被埋在图案之间,进一步层压结构材料层并在层压的结构材料层上形成图案的步骤,以及完成所有层压之后最终去除牺牲材料的步骤。
    • 6. 发明授权
    • Method for manufacturing substrate for making microarray
    • 制造微阵列基板的方法
    • US08053179B2
    • 2011-11-08
    • US12071889
    • 2008-02-27
    • Wataru KusakiTakeshi KinshoToshinobu Ishihara
    • Wataru KusakiTakeshi KinshoToshinobu Ishihara
    • G03F7/26
    • G03F7/0397
    • A method for manufacturing a substrate for making a microarray wherein a monomolecular film for immobilizing a target molecule can be simply formed position-selectively in manufacture of the substrate for making the microarray is provided.A method for manufacturing a substrate for making a microarray, comprising, a step of forming a resist film on the substrate using a chemically amplified positive resist composition using a copolymer where a content of a monomer unit having a hydroxyl group is 5 mole % or less relative to total monomer units as a binder; a step of patterning the resist film; a step of forming a monomolecular film having a silicon oxide chain on the substrate having the patterned resist film; and subsequently a step of removing the resist film.
    • 提供了制造用于制造微阵列的基板的方法,其中用于固定靶分子的单分子膜可以简单地在用于制备微阵列的基板的制造中位置选择性地形成。 一种制造微阵列的基板的制造方法,其特征在于,使用使用了具有羟基的单体单元的含量为5摩尔%以下的共聚物的化学放大型正性抗蚀剂组合物在基板上形成抗蚀剂膜的工序 相对于作为粘合剂的总单体单元; 图案化抗蚀剂膜的步骤; 在具有图案化抗蚀剂膜的基板上形成具有氧化硅链的单分子膜的步骤; 随后除去抗蚀剂膜的步骤。
    • 8. 发明申请
    • Method for manufacturing substrate for making microarray
    • 制造微阵列基板的方法
    • US20080233521A1
    • 2008-09-25
    • US12071889
    • 2008-02-27
    • Wataru KusakiTakeshi KinshoToshinobu Ishihara
    • Wataru KusakiTakeshi KinshoToshinobu Ishihara
    • G03F7/38
    • G03F7/0397
    • A method for manufacturing a substrate for making a microarray wherein a monomolecular film for immobilizing a target molecule can be simply formed position-selectively in manufacture of the substrate for making the microarray is provided.A method for manufacturing a substrate for making a microarray, comprising, a step of forming a resist film on the substrate using a chemically amplified positive resist composition using a copolymer where a content of a monomer unit having a hydroxyl group is 5 mole % or less relative to total monomer units as a binder; a step of patterning the resist film; a step of forming a monomolecular film having a silicon oxide chain on the substrate having the patterned resist film; and subsequently a step of removing the resist film.
    • 提供了制造用于制造微阵列的基板的方法,其中用于固定靶分子的单分子膜可以简单地在用于制备微阵列的基板的制造中位置选择性地形成。 一种制造微阵列的基板的制造方法,其特征在于,使用使用了具有羟基的单体单元的含量为5摩尔%以下的共聚物的化学放大型正性抗蚀剂组合物在基板上形成抗蚀剂膜的工序 相对于作为粘合剂的总单体单元; 图案化抗蚀剂膜的步骤; 在具有图案化抗蚀剂膜的基板上形成具有氧化硅链的单分子膜的步骤; 随后除去抗蚀剂膜的步骤。
    • 10. 发明申请
    • Method for manufacturing substrate for making microarray
    • 制造微阵列基板的方法
    • US20080233309A1
    • 2008-09-25
    • US12073953
    • 2008-03-12
    • Wataru KusakiTakeshi KinshoToshinobu Ishihara
    • Wataru KusakiTakeshi KinshoToshinobu Ishihara
    • C23C14/28
    • G01N33/54353B01J2219/00317B01J2219/00608B01J2219/00617B01J2219/00621B01J2219/00626B01J2219/00635B01J2219/00637B01J2219/00659B01J2219/00722
    • To provide a method for manufacturing a substrate for making a microarray which will ensure the secure immobilization of a material in a site-selective manner at a low cost. The method comprises the steps of: forming a monomolecular film on the surface of a substrate using a silane compound represented by the following general formula (1), Y3Si—(CH2)m—X   (1) ,wherein m represents an integer from 3 to 20; X represents a hydroxyl group precursor functional group which will be converted to a hydroxyl group when exposed to acid; and Y independently represents a halogen atom or alkoxy group having 1-4 carbon atoms; and converting the hydroxyl group precursor functional group represented by X to a hydroxyl group; wherein the step of converting a hydroxyl group precursor functional group represented by X to a hydroxyl group comprises forming, on the monomolecular film, a polymer layer containing a compound represented by the following general formula (2) or (3),
    • 提供一种用于制造微阵列的基板的方法,该方法将以低成本确保以选址方式安全地固定材料。 该方法包括以下步骤:使用由以下通式(1)表示的硅烷化合物在基材表面上形成单分子膜:<?在线式描述=“在线式”末端=“铅 “→> Y 3 -S-(CH 2)m -X(1)<βin-line-formula description =”In- 线式“end =”tail“?>,其中m表示3至20的整数; X表示当暴露于酸时将转化为羟基的羟基前体官能团; Y独立地表示具有1-4个碳原子的卤原子或烷氧基; 并将由X表示的羟基前体官能团转化为羟基; 其中将由X表示的羟基前体官能团转化为羟基的步骤包括在单分子膜上形成含有由以下通式(2)或(3)表示的化合物的聚合物层,