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1. 发明授权

US07132316B2 After deposition method of thinning film to reduce pinhole defects 失效
公开(公告)号：US07132316B2
公开(公告)日：2006-11-07
申请号：US11029812
申请日：2005-01-05
申请人： Wai-Kin Li , Colin J. Brodsky , Steven A. Scheer
发明人： Wai-Kin Li , Colin J. Brodsky , Steven A. Scheer
IPC分类号： H01L21/00 , H01L21/8238
CPC分类号： G03F7/11 , H01L21/312
摘要： A method of forming a thin film is provided in which a film having a first thickness is deposited over a substrate, wherein the first thickness is greater than a thickness at which the initially deposited film begins to dewet from the substrate. The initially deposited film is then stabilized to form a stabilized film. Thereafter, the stabilized film is then thinned to a second thickness, such that the resulting film now has a smaller thickness than the thickness at which the initially deposited film would begin to dewet from the substrate. However, as a result of the prior stabilization, the reduced thickness film remains free of dewetting defects.

2. 发明授权

US07473461B2 Film stack having under layer for preventing pinhole defects 失效
标题翻译：薄膜叠层具有防止针孔缺陷的底层
公开(公告)号：US07473461B2
公开(公告)日：2009-01-06
申请号：US11827014
申请日：2007-07-10
申请人： Colin J. Brodsky , Wai-Kin Li , Steven A. Scheer
发明人： Colin J. Brodsky , Wai-Kin Li , Steven A. Scheer
IPC分类号： B32B9/00 , B32B33/00
CPC分类号： B32B27/00 , Y10T428/24942 , Y10T428/2495 , Y10T428/265 , Y10T428/31504 , Y10T428/3154 , Y10T428/31544 , Y10T428/31855
摘要： A film stack is provided in which a first film including a first polymer directly contacts a surface of a substrate at which a given material is exposed. A second film, which can include a second polymer other than the first polymer, is formed to have an inner surface contacting the first film. The second film can have a thickness at which a free energy of the second film would be negative if the second film were disposed directly on the substrate. Desirably, the resulting second film is substantially free of dewetting defects.
摘要翻译：提供了一种膜叠层，其中包括第一聚合物的第一膜直接接触暴露给定材料的基板的表面。可以包括第一聚合物以外的第二聚合物的第二膜被形成为具有与第一膜接触的内表面。如果第二膜直接设置在基板上，则第二膜可以具有第二膜的自由能为负的厚度。理想地，所得到的第二膜基本上没有脱湿缺陷。

3. 发明申请

US20070178404A1 METHODS OF PREVENTING DEFECTS IN ANTIREFLECTIVE COATINGS 审中-公开
标题翻译：防止抗反射涂层缺陷的方法
公开(公告)号：US20070178404A1
公开(公告)日：2007-08-02
申请号：US11307268
申请日：2006-01-30
申请人： Colin J. Brodsky , Mary Jane Brodsky , Wai-Kin Li , Steven A. Scheer
发明人： Colin J. Brodsky , Mary Jane Brodsky , Wai-Kin Li , Steven A. Scheer
IPC分类号： G03C1/00
CPC分类号： G03F7/091
摘要： A method of forming a relief image on a substrate including: applying over a substrate a layer of an antireflective coating; and vacuum processing the antireflective coating. This method reduces the number of pinhole defects present in the antireflective coating.
摘要翻译：一种在衬底上形成凸版图像的方法，包括：在衬底上涂覆抗反射涂层; 并对抗反射涂层进行真空处理。该方法减少了抗反射涂层中存在的针孔缺陷的数量。

4. 发明授权

US07541065B2 Method of forming film stack having under layer for preventing pinhole defects 有权
标题翻译：形成具有下层以防止针孔缺陷的薄膜叠层的方法
公开(公告)号：US07541065B2
公开(公告)日：2009-06-02
申请号：US11820302
申请日：2007-06-18
申请人： Colin J. Brodsky , Wai-Kin Li , Steven A. Scheer
发明人： Colin J. Brodsky , Wai-Kin Li , Steven A. Scheer
IPC分类号： B05D7/00
CPC分类号： B32B27/00 , Y10T428/24942 , Y10T428/2495 , Y10T428/265 , Y10T428/31504 , Y10T428/3154 , Y10T428/31544 , Y10T428/31855
摘要： A method is provided for forming a film stack in which a first film including a first polymer is formed on a substrate. A second film, which can include a second polymer other than the first polymer, is formed to have an inner surface disposed on the first film. The second film can have a thickness at which a free energy of the second film would be negative if the second film were disposed directly on the substrate. Desirably, the resulting second film is substantially free of dewetting defects.
摘要翻译：提供了一种用于形成膜叠层的方法，其中在基板上形成包括第一聚合物的第一膜。可以包括第一聚合物以外的第二聚合物的第二膜形成为具有设置在第一膜上的内表面。如果第二膜直接设置在基板上，则第二膜可以具有第二膜的自由能为负的厚度。理想地，所得到的第二膜基本上没有脱湿缺陷。

5. 发明授权

US07267863B2 Film stack having under layer for preventing pinhole defects 有权
标题翻译：薄膜叠层具有防止针孔缺陷的底层
公开(公告)号：US07267863B2
公开(公告)日：2007-09-11
申请号：US10880818
申请日：2004-06-30
申请人： Colin J. Brodsky , Wai-Kin Li , Steven A. Scheer
发明人： Colin J. Brodsky , Wai-Kin Li , Steven A. Scheer
IPC分类号： B32B18/00 , B32B27/08 , B32B27/30
CPC分类号： B32B27/00 , Y10T428/24942 , Y10T428/2495 , Y10T428/265 , Y10T428/31504 , Y10T428/3154 , Y10T428/31544 , Y10T428/31855
摘要： A film stack and method of forming a film stack are provided in which a first film is disposed on a substrate and a second film has an inner surface disposed on the first film. The second film has a thickness smaller than a reference thickness at which the second film would begin to dewet from the substrate if the second film were disposed directly on the substrate. However, the second film is substantially free of dewetting defects because it is disposed overlying the first film which has a first Hamaker constant having a negative value with respect to the substrate.
摘要翻译：提供了一种薄膜叠层和形成薄膜叠层的方法，其中第一薄膜设置在基底上，第二薄膜具有设置在第一薄膜上的内表面。如果第二膜直接设置在基板上，则第二膜的厚度小于第二膜从基板开始露出的基准厚度。然而，第二膜基本上没有脱湿缺陷，因为它被布置在第一膜上，该第一膜具有相对于基底具有负值的第一Hamaker常数。

6. 发明授权

US07786017B1 Utilizing inverse reactive ion etching lag in double patterning contact formation 失效
标题翻译：在双重图案化接触形成中利用反向离子蚀刻滞后
公开(公告)号：US07786017B1
公开(公告)日：2010-08-31
申请号：US12561612
申请日：2009-09-17
申请人： Bradley J. Morgenfeld , Scott D. Allen , Colin J. Brodsky , Wai-Kin Li
发明人： Bradley J. Morgenfeld , Scott D. Allen , Colin J. Brodsky , Wai-Kin Li
IPC分类号： H01L21/302
CPC分类号： H01L21/31144 , H01L21/31116 , H01L21/76816
摘要： Solutions for solutions for utilizing Inverse Reactive Ion Etching lag in double patterning contact formation are disclosed. In one embodiment, a method includes providing a CMOS device including: an NMOS device having an NMOS gate and a PMOS device having a PMOS gate; a shallow trench isolation located between the NMOS device and the PMOS device; and an inter-level dielectric located over the NMOS device, the PMOS device and the shallow trench isolation; performing a double-patterning etch process on the CMOS device under conditions causing inverse reactive ion etching lag, the performing including forming a first opening, a second opening and a third opening, the second opening being wider than the first opening, and the third opening being contiguous with the second opening; and forming a first contact in the first opening and forming a second contact in both of the second opening and the third opening.
摘要翻译：公开了用于在双重图案化接触形成中利用反向离子蚀刻滞后的解决方案。在一个实施例中，一种方法包括提供CMOS器件，其包括：具有NMOS栅极和PMOS器件的NMOS器件，具有PMOS栅极; 位于NMOS器件和PMOS器件之间的浅沟槽隔离; 以及位于NMOS器件，PMOS器件和浅沟槽隔离之上的级间电介质; 在引起反向离子蚀刻滞后的条件下在CMOS器件上进行双图案化蚀刻工艺，其特征在于包括形成第一开口，第二开口和第三开口，第二开口比第一开口宽，第三开口与第二个开口连续; 以及在所述第一开口中形成第一触点并且在所述第二开口和所述第三开口中形成第二触点。

7. 发明授权

US07816069B2 Graded spin-on organic antireflective coating for photolithography 有权
标题翻译：梯度旋涂有机抗反射涂层用于光刻
公开(公告)号：US07816069B2
公开(公告)日：2010-10-19
申请号：US11473338
申请日：2006-06-23
申请人： Colin J. Brodsky , Sean D. Burns , Dario L. Goldfarb , Michael Lercel , David R. Medeiros , Dirk Pfeiffer , Daniel P. Sanders , Steven A. Scheer , Libor Vyklicky
发明人： Colin J. Brodsky , Sean D. Burns , Dario L. Goldfarb , Michael Lercel , David R. Medeiros , Dirk Pfeiffer , Daniel P. Sanders , Steven A. Scheer , Libor Vyklicky
IPC分类号： G03F7/11 , G03C1/00 , C08L29/04 , C08L27/12
CPC分类号： G03F7/091 , Y10S438/952
摘要： An antireflective coating that contains at least two polymer components and comprises chromophore moieties and transparent moieties is provided. The antireflective coating is useful for providing a single-layer composite graded antireflective coating formed beneath a photoresist layer.
摘要翻译：提供了包含至少两种聚合物组分并且包含发色团部分和透明部分的抗反射涂层。抗反射涂层可用于提供在光致抗蚀剂层下形成的单层复合渐变抗反射涂层。

8. 发明申请

US20080213707A1 Graded Spin-on Organic Antireflective Coating for Photolithography 有权
标题翻译：用于光刻的分级自旋有机抗反射涂层
公开(公告)号：US20080213707A1
公开(公告)日：2008-09-04
申请号：US12042709
申请日：2008-03-05
申请人： Colin J. Brodsky , Sean D. Burns , Dario L. Goldfarb , Michael Lercel , David R. Medeiros , Dirk Pfeiffer , Daniel P. Sanders , Steven A. Scheer , Libor Vyklicky
发明人： Colin J. Brodsky , Sean D. Burns , Dario L. Goldfarb , Michael Lercel , David R. Medeiros , Dirk Pfeiffer , Daniel P. Sanders , Steven A. Scheer , Libor Vyklicky
IPC分类号： G03F1/14
CPC分类号： G03F7/091 , Y10S438/952
摘要： An antireflective coating that contains at least two polymer components and comprises chromophore moieties and transparent moieties is provided. The antireflective coating is useful for providing a single-layer composite graded antireflective coating formed beneath a photoresist layer.
摘要翻译：提供了包含至少两种聚合物组分并且包含发色团部分和透明部分的抗反射涂层。抗反射涂层可用于提供在光致抗蚀剂层下形成的单层复合渐变抗反射涂层。

9. 发明申请

US20080008955A1 Graded spin-on organic antireflective coating for photolithography 有权
标题翻译：梯度旋涂有机抗反射涂层用于光刻
公开(公告)号：US20080008955A1
公开(公告)日：2008-01-10
申请号：US11473338
申请日：2006-06-23
申请人： Colin J. Brodsky , Sean D. Burns , Dario L. Goldfarb , Michael Lercel , David R. Medeiros , Dirk Pfeiffer , Daniel P. Sanders , Steven A. Scheer , Libor Vyklicky
发明人： Colin J. Brodsky , Sean D. Burns , Dario L. Goldfarb , Michael Lercel , David R. Medeiros , Dirk Pfeiffer , Daniel P. Sanders , Steven A. Scheer , Libor Vyklicky
IPC分类号： G03C1/00
CPC分类号： G03F7/091 , Y10S438/952
摘要： An antireflective coating that contains at least two polymer components and comprises chromophore moieties and transparent moieties is provided. The antireflective coating is useful for providing a single-layer composite graded antireflective coating formed beneath a photoresist layer.
摘要翻译：提供了包含至少两种聚合物组分并且包含发色团部分和透明部分的抗反射涂层。抗反射涂层可用于提供在光致抗蚀剂层下形成的单层复合渐变抗反射涂层。

10. 发明授权

US07632631B2 Method of preventing pinhole defects through co-polymerization 有权
标题翻译：通过共聚防止针孔缺陷的方法
公开(公告)号：US07632631B2
公开(公告)日：2009-12-15
申请号：US11029813
申请日：2005-01-05
申请人： Steven A. Scheer , Colin J. Brodsky
发明人： Steven A. Scheer , Colin J. Brodsky
IPC分类号： G03F7/00
CPC分类号： G03F7/168 , G03F7/091 , G03F7/11 , Y10S430/136
摘要： A method is provided for forming a stable thin film on a substrate. The method includes depositing a co-polymer composition having a first component and a second component onto a substrate to form a stable film having a first thickness. The first component has first dielectric properties not enabling the first component by itself to produce the stable film having the first thickness. However, the second component has second dielectric properties which impart stability to the film at the first thickness. In a preferred embodiment, the second component includes a leaving group, and the method further includes first thermal processing the film to cause a solvent but not the leaving group to be removed from the film, after which second thermal processing is performed to at least substantially remove the leaving group from the film. As a result, the film is reduced to a second thickness smaller than the first thickness, and the film remains stable during both the first and the second thermal processing.
摘要翻译：提供了在基板上形成稳定的薄膜的方法。该方法包括将具有第一组分和第二组分的共聚物组合物沉积到基底上以形成具有第一厚度的稳定膜。第一组分具有不能使第一组分本身产生具有第一厚度的稳定膜的第一介电性质。然而，第二组分具有赋予第一厚度的薄膜稳定性的第二介电特性。在优选的实施方案中，第二组分包括离去基团，并且该方法还包括首先热处理膜以引起溶剂而不是离开基团从膜中除去，之后进行第二热处理至少基本上从电影中删除离开组。结果，膜被还原成小于第一厚度的第二厚度，并且在第一和第二热处理期间膜保持稳定。

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