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1. 发明授权

US5776864A Large single domain 123 material produced by seeding with single crystal rare earth barium copper oxide single crystals 失效
标题翻译：通过单晶稀土钡氧化铜单晶接种生产的大单晶123材料
公开(公告)号：US5776864A
公开(公告)日：1998-07-07
申请号：US834687
申请日：1997-04-01
申请人： Volker Todt , Dean J. Miller , Donglu Shi , Suvankar Sengupta
发明人： Volker Todt , Dean J. Miller , Donglu Shi , Suvankar Sengupta
IPC分类号： C04B35/45 , H01L39/24 , H01L39/12 , C04B35/653
CPC分类号： C04B35/4508 , H01L39/2419 , Y10S505/729
摘要： A method of fabricating bulk YBa.sub.2 Cu.sub.3 O.sub.x where compressed powder oxides and/or carbonates of Y and Ba and Cu present in mole ratios to form YBa.sub.2 Cu.sub.3 O.sub.x are heated in the presence of a Nd.sub.1+x Ba.sub.2-x Cu.sub.3 O.sub.y seed crystal to a temperature sufficient to form a liquid phase in the YBa.sub.2 Cu.sub.3 O.sub.x while maintaining the seed crystal solid. The materials are slowly cooled to provide a YBa.sub.2 Cu.sub.3 O.sub.x material having a predetermined number of domains between 1 and 5. Crack-free single domain materials can be formed using either plate shaped seed crystals or cube shaped seed crystals with a pedestal of preferential orientation material.
摘要翻译：一种制造本体YBa2Cu3Ox的方法，其中Y和Ba和Cu的压缩粉末氧化物和/或碳酸盐以摩尔比形成YBa 2 Cu 3 O x的摩尔比在Nd1 + xBa2-xCu3Oy晶种存在下加热至足以形成液相的温度在YBa2Cu3Ox中保持晶种固体。将材料缓慢冷却以提供具有1至5之间预定数量的结构域的YBa2Cu3Ox材料。可以使用具有优先取向材料的基座的板状晶种或立方体晶种形成无裂纹单畴材料。

2. 发明申请

US20100024718A1 Procedure for in-situ determination of thermal gradients at the crystal growth front 有权
标题翻译：在晶体生长前沿原位测定热梯度的程序
公开(公告)号：US20100024718A1
公开(公告)日：2010-02-04
申请号：US12221229
申请日：2008-07-31
申请人： Benno Orschel , Andrzej Buczkowski , Joel Kearns , Keiichi Takanashi , Volker Todt
发明人： Benno Orschel , Andrzej Buczkowski , Joel Kearns , Keiichi Takanashi , Volker Todt
IPC分类号： C30B15/22
CPC分类号： C30B15/22 , C30B15/203 , C30B29/06 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032 , Y10T117/1036 , Y10T117/104 , Y10T117/1044 , Y10T117/1048 , Y10T117/1052 , Y10T117/1056 , Y10T117/106 , Y10T117/1064 , Y10T117/1068 , Y10T117/1072
摘要： A method and apparatus for growing a semiconductor crystal include pulling the semiconductor crystal from melt at a pull speed and modulating the pull speed by combining a periodic pull speed with an average speed. The modulation of the pull speed allows in-situ determination of characteristic temperature gradients in the melt and in the crystal during crystal formation. The temperature gradients may be used to control relevant process parameters that affect morphological stability or intrinsic material properties in the finished crystal such as for instance the target pull speed of the crystal or the melt gap, which determines the thermal gradient in the crystal during growth.
摘要翻译：用于生长半导体晶体的方法和装置包括以拉速从熔体中拉出半导体晶体，并通过组合周期性拉速与平均速度来调制拉速。拉速的调制允许在晶体形成期间原位测定熔体和晶体中的特征温度梯度。温度梯度可用于控制影响成品晶体的形态稳定性或本征材料性质的相关工艺参数，例如晶体的目标拉速或熔体间隙，这决定了生长过程中晶体的热梯度。

3. 发明授权

US08221545B2 Procedure for in-situ determination of thermal gradients at the crystal growth front 有权
标题翻译：在晶体生长前沿原位测定热梯度的程序
公开(公告)号：US08221545B2
公开(公告)日：2012-07-17
申请号：US12221229
申请日：2008-07-31
申请人： Benno Orschel , Andrzej Buczkowski , Joel Kearns , Keiichi Takanashi , Volker Todt
发明人： Benno Orschel , Andrzej Buczkowski , Joel Kearns , Keiichi Takanashi , Volker Todt
IPC分类号： C30B15/20
CPC分类号： C30B15/22 , C30B15/203 , C30B29/06 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032 , Y10T117/1036 , Y10T117/104 , Y10T117/1044 , Y10T117/1048 , Y10T117/1052 , Y10T117/1056 , Y10T117/106 , Y10T117/1064 , Y10T117/1068 , Y10T117/1072
摘要： A method and apparatus for growing a semiconductor crystal include pulling the semiconductor crystal from melt at a pull speed and modulating the pull speed by combining a periodic pull speed with an average speed. The modulation of the pull speed allows in-situ determination of characteristic temperature gradients in the melt and in the crystal during crystal formation. The temperature gradients may be used to control relevant process parameters that affect morphological stability or intrinsic material properties in the finished crystal such as for instance the target pull speed of the crystal or the melt gap, which determines the thermal gradient in the crystal during growth.
摘要翻译：用于生长半导体晶体的方法和装置包括以拉速从熔体中拉出半导体晶体，并通过组合周期性拉速与平均速度来调制拉速。拉速的调制允许在晶体形成期间原位测定熔体和晶体中的特征温度梯度。温度梯度可用于控制影响成品晶体的形态稳定性或本征材料性质的相关工艺参数，例如晶体的目标拉速或熔体间隙，这决定了生长过程中晶体的热梯度。

4. 发明授权

US08012255B2 Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process 有权
标题翻译：在生长过程中控制硅晶锭的直径的方法和装置
公开(公告)号：US08012255B2
公开(公告)日：2011-09-06
申请号：US12184016
申请日：2008-07-31
申请人： Benno Orschel , Joel Kearns , Keiichi Takanashi , Volker Todt
发明人： Benno Orschel , Joel Kearns , Keiichi Takanashi , Volker Todt
IPC分类号： C30B15/22
CPC分类号： C30B15/22 , C30B29/06 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032
摘要： An improvement to a method and an apparatus for growing a monocrystalline silicon ingot from silicon melt according to the CZ process. The improvement performs defining an error between a target taper of a meniscus and a measured taper, and translating the taper error into a feedback adjustment to a pull-speed of the silicon ingot. The conventional control model for controlling the CZ process relies on linear control (PID) controlling a non-linear system of quadratic relationship defined in the time domain between the diameter and the pull-speed. The present invention transforms the quadratic relationship in the time domain between the diameter and the pull-speed into a simile, linear relationship in the length domain between a meniscus taper of the ingot and the pull-speed. The present invention applies a linear control (modified PID) which operates in the length domain, and controls a system that has a linear relationship between the ingot taper and the pull-speed in the length domain to control the diameter of a growing silicon ingot.
摘要翻译：根据CZ工艺从硅熔体生长单晶硅锭的方法和设备的改进。该改进执行定义弯液面的目标锥度和测量的锥度之间的误差，并将锥度误差转换为硅锭的拉速的反馈调节。用于控制CZ过程的常规控制模型依赖于线性控制（PID）来控制在直径和拉速之间的时域中定义的二次关系的非线性系统。本发明将直径和拉速之间的时域中的二次关系变换成在晶锭的弯月面锥度与拉速之间的长度域中的简单的线性关系。本发明应用在长度域内工作的线性控制（改进的PID），并且控制在长度域中具有晶锭锥度和拉速之间的线性关系的系统，以控制生长中的硅锭的直径。

5. 发明申请

US20100024716A1 METHOD AND APPARATUS FOR CONTROLLING DIAMETER OF A SILICON CRYSTAL INGOT IN A GROWTH PROCESS 有权
标题翻译：用于控制生长过程中硅晶体直径的方法和装置
公开(公告)号：US20100024716A1
公开(公告)日：2010-02-04
申请号：US12184016
申请日：2008-07-31
申请人： Benno Orschel , Joel Kearns , Keiichi Takanashi , Volker Todt
发明人： Benno Orschel , Joel Kearns , Keiichi Takanashi , Volker Todt
IPC分类号： C30B15/20
CPC分类号： C30B15/22 , C30B29/06 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032
摘要： An improvement to a method and an apparatus for growing a monocrystalline silicon ingot from silicon melt according to the CZ process. The improvement performs defining an error between a target taper of a meniscus and a measured taper, and translating the taper error into a feedback adjustment to a pull-speed of the silicon ingot. The conventional control model for controlling the CZ process relies on linear control (PID) controlling a non-linear system of quadratic relationship defined in the time domain between the diameter and the pull-speed. The present invention transforms the quadratic relationship in the time domain between the diameter and the pull-speed into a simile, linear relationship in the length domain between a meniscus taper of the ingot and the pull-speed. The present invention applies a linear control (modified PID) which operates in the length domain, and controls a system that has a linear relationship between the ingot taper and the pull-speed in the length domain to control the diameter of a growing silicon ingot.
摘要翻译：根据CZ工艺从硅熔体生长单晶硅锭的方法和设备的改进。该改进执行定义弯液面的目标锥度和测量的锥度之间的误差，并将锥度误差转换为硅锭的拉速的反馈调节。用于控制CZ过程的常规控制模型依赖于线性控制（PID）来控制在直径和拉速之间的时域中定义的二次关系的非线性系统。本发明将直径和拉速之间的时域中的二次关系变换成在晶锭的弯月面锥度与拉速之间的长度域中的简单的线性关系。本发明应用在长度域内工作的线性控制（改进的PID），并且控制在长度域中具有晶锭锥度和拉速之间的线性关系的系统，以控制生长中的硅锭的直径。

6. 发明授权

US08673075B2 Procedure for in-situ determination of thermal gradients at the crystal growth front 有权
标题翻译：在晶体生长前沿原位测定热梯度的程序
公开(公告)号：US08673075B2
公开(公告)日：2014-03-18
申请号：US13434167
申请日：2012-03-29
申请人： Benno Orschel , Andrzej Buczkowski , Joel Kearns , Keiichi Takanashi , Volker Todt
发明人： Benno Orschel , Andrzej Buczkowski , Joel Kearns , Keiichi Takanashi , Volker Todt
IPC分类号： C30B15/22
CPC分类号： C30B15/22 , C30B15/203 , C30B29/06 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032 , Y10T117/1036 , Y10T117/104 , Y10T117/1044 , Y10T117/1048 , Y10T117/1052 , Y10T117/1056 , Y10T117/106 , Y10T117/1064 , Y10T117/1068 , Y10T117/1072
摘要： A method and apparatus for growing a semiconductor crystal include pulling the semiconductor crystal from melt at a pull speed and modulating the pull speed by combining a periodic pull speed with an average speed. The modulation of the pull speed allows in-situ determination of characteristic temperature gradients in the melt and in the crystal during crystal formation. The temperature gradients may be used to control relevant process parameters that affect morphological stability or intrinsic material properties in the finished crystal such as for instance the target pull speed of the crystal or the melt gap, which determines the thermal gradient in the crystal during growth.
摘要翻译：用于生长半导体晶体的方法和装置包括以拉速从熔体中拉出半导体晶体，并通过组合周期性拉速与平均速度来调制拉速。拉速的调制允许在晶体形成期间原位测定熔体和晶体中的特征温度梯度。温度梯度可用于控制影响成品晶体的形态稳定性或本征材料性质的相关工艺参数，例如晶体的目标拉速或熔体间隙，这决定了生长过程中晶体的热梯度。

7. 发明授权

US08641822B2 Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process 有权
标题翻译：在生长过程中控制硅晶锭的直径的方法和装置
公开(公告)号：US08641822B2
公开(公告)日：2014-02-04
申请号：US12719405
申请日：2010-03-08
申请人： Benno Orschel , Joel Kearns , Keiichi Takanashi , Volker Todt
发明人： Benno Orschel , Joel Kearns , Keiichi Takanashi , Volker Todt
IPC分类号： C30B35/00 , C30B15/20
CPC分类号： C30B15/22 , C30B29/06 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032
摘要： An improvement to a method and an apparatus for growing a monocrystalline silicon ingot from silicon melt according to the CZ process. The improvement performs defining an error between a target taper of a meniscus and a measured taper, and translating the taper error into a feedback adjustment to a pull-speed of the silicon ingot. The conventional control model for controlling the CZ process relies on linear control (PID) controlling a non-linear system of quadratic relationship defined in the time domain between the diameter and the pull-speed. The present invention transforms the quadratic relationship in the time domain between the diameter and the pull-speed into a simile, linear relationship in the length domain between a meniscus taper of the ingot and the pull-speed. The present invention applies a linear control (modified PID) which operates in the length domain, and controls a system that has a linear relationship between the ingot taper and the pull-speed in the length domain to control the diameter of a growing silicon ingot.
摘要翻译：根据CZ工艺从硅熔体生长单晶硅锭的方法和设备的改进。该改进执行定义弯液面的目标锥度和测量的锥度之间的误差，并将锥度误差转换为硅锭的拉速的反馈调节。用于控制CZ过程的常规控制模型依赖于线性控制（PID）来控制在直径和拉速之间的时域中定义的二次关系的非线性系统。本发明将直径和拉速之间的时域中的二次关系变换成在晶锭的弯月面锥度与拉速之间的长度域中的简单的线性关系。本发明应用在长度域内工作的线性控制（改进的PID），并且控制在长度域中具有晶锭锥度和拉速之间的线性关系的系统，以控制生长中的硅锭的直径。

8. 发明申请

US20120186512A1 PROCEDURE FOR IN-SITU DETERMINATION OF THERMAL GRADIENTS AT THE CRYSTAL GROWTH FRONT 有权
标题翻译：在晶体生长前沿测定热梯度的程序
公开(公告)号：US20120186512A1
公开(公告)日：2012-07-26
申请号：US13434167
申请日：2012-03-29
申请人： Benno Orschel , Andrzej Buczkowski , Joel Kearns , Keiichi Takanashi , Volker Todt
发明人： Benno Orschel , Andrzej Buczkowski , Joel Kearns , Keiichi Takanashi , Volker Todt
IPC分类号： C30B15/22 , C30B15/30
CPC分类号： C30B15/22 , C30B15/203 , C30B29/06 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032 , Y10T117/1036 , Y10T117/104 , Y10T117/1044 , Y10T117/1048 , Y10T117/1052 , Y10T117/1056 , Y10T117/106 , Y10T117/1064 , Y10T117/1068 , Y10T117/1072
摘要： A method and apparatus for growing a semiconductor crystal include pulling the semiconductor crystal from melt at a pull speed and modulating the pull speed by combining a periodic pull speed with an average speed. The modulation of the pull speed allows in-situ determination of characteristic temperature gradients in the melt and in the crystal during crystal formation. The temperature gradients may be used to control relevant process parameters that affect morphological stability or intrinsic material properties in the finished crystal such as for instance the target pull speed of the crystal or the melt gap, which determines the thermal gradient in the crystal during growth.
摘要翻译：用于生长半导体晶体的方法和装置包括以拉速从熔体中拉出半导体晶体，并通过组合周期性拉速与平均速度来调制拉速。拉速的调制允许在晶体形成期间原位测定熔体和晶体中的特征温度梯度。温度梯度可用于控制影响成品晶体的形态稳定性或本征材料性质的相关工艺参数，例如晶体的目标拉速或熔体间隙，这决定了生长过程中晶体的热梯度。

9. 发明申请

US20100206219A1 METHOD AND APPARATUS FOR CONTROLLING DIAMETER OF A SILICON CRYSTAL INGOT IN A GROWTH PROCESS 有权
公开(公告)号：US20100206219A1
公开(公告)日：2010-08-19
申请号：US12719405
申请日：2010-03-08
申请人： Benno Orschel , Joel Kearns , Keiichi Takanashi , Volker Todt
发明人： Benno Orschel , Joel Kearns , Keiichi Takanashi , Volker Todt
IPC分类号： C30B15/24
CPC分类号： C30B15/22 , C30B29/06 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032
摘要： An improvement to a method and an apparatus for growing a monocrystalline silicon ingot from silicon melt according to the CZ process. The improvement performs defining an error between a target taper of a meniscus and a measured taper, and translating the taper error into a feedback adjustment to a pull-speed of the silicon ingot. The conventional control model for controlling the CZ process relies on linear control (PID) controlling a non-linear system of quadratic relationship defined in the time domain between the diameter and the pull-speed. The present invention transforms the quadratic relationship in the time domain between the diameter and the pull-speed into a simile, linear relationship in the length domain between a meniscus taper of the ingot and the pull-speed. The present invention applies a linear control (modified PID) which operates in the length domain, and controls a system that has a linear relationship between the ingot taper and the pull-speed in the length domain to control the diameter of a growing silicon ingot.

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