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1. 发明授权

US08673075B2 Procedure for in-situ determination of thermal gradients at the crystal growth front 有权
标题翻译：在晶体生长前沿原位测定热梯度的程序
公开(公告)号：US08673075B2
公开(公告)日：2014-03-18
申请号：US13434167
申请日：2012-03-29
申请人： Benno Orschel , Andrzej Buczkowski , Joel Kearns , Keiichi Takanashi , Volker Todt
发明人： Benno Orschel , Andrzej Buczkowski , Joel Kearns , Keiichi Takanashi , Volker Todt
IPC分类号： C30B15/22
CPC分类号： C30B15/22 , C30B15/203 , C30B29/06 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032 , Y10T117/1036 , Y10T117/104 , Y10T117/1044 , Y10T117/1048 , Y10T117/1052 , Y10T117/1056 , Y10T117/106 , Y10T117/1064 , Y10T117/1068 , Y10T117/1072
摘要： A method and apparatus for growing a semiconductor crystal include pulling the semiconductor crystal from melt at a pull speed and modulating the pull speed by combining a periodic pull speed with an average speed. The modulation of the pull speed allows in-situ determination of characteristic temperature gradients in the melt and in the crystal during crystal formation. The temperature gradients may be used to control relevant process parameters that affect morphological stability or intrinsic material properties in the finished crystal such as for instance the target pull speed of the crystal or the melt gap, which determines the thermal gradient in the crystal during growth.
摘要翻译：用于生长半导体晶体的方法和装置包括以拉速从熔体中拉出半导体晶体，并通过组合周期性拉速与平均速度来调制拉速。拉速的调制允许在晶体形成期间原位测定熔体和晶体中的特征温度梯度。温度梯度可用于控制影响成品晶体的形态稳定性或本征材料性质的相关工艺参数，例如晶体的目标拉速或熔体间隙，这决定了生长过程中晶体的热梯度。

2. 发明授权

US08641822B2 Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process 有权
标题翻译：在生长过程中控制硅晶锭的直径的方法和装置
公开(公告)号：US08641822B2
公开(公告)日：2014-02-04
申请号：US12719405
申请日：2010-03-08
申请人： Benno Orschel , Joel Kearns , Keiichi Takanashi , Volker Todt
发明人： Benno Orschel , Joel Kearns , Keiichi Takanashi , Volker Todt
IPC分类号： C30B35/00 , C30B15/20
CPC分类号： C30B15/22 , C30B29/06 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032
摘要： An improvement to a method and an apparatus for growing a monocrystalline silicon ingot from silicon melt according to the CZ process. The improvement performs defining an error between a target taper of a meniscus and a measured taper, and translating the taper error into a feedback adjustment to a pull-speed of the silicon ingot. The conventional control model for controlling the CZ process relies on linear control (PID) controlling a non-linear system of quadratic relationship defined in the time domain between the diameter and the pull-speed. The present invention transforms the quadratic relationship in the time domain between the diameter and the pull-speed into a simile, linear relationship in the length domain between a meniscus taper of the ingot and the pull-speed. The present invention applies a linear control (modified PID) which operates in the length domain, and controls a system that has a linear relationship between the ingot taper and the pull-speed in the length domain to control the diameter of a growing silicon ingot.
摘要翻译：根据CZ工艺从硅熔体生长单晶硅锭的方法和设备的改进。该改进执行定义弯液面的目标锥度和测量的锥度之间的误差，并将锥度误差转换为硅锭的拉速的反馈调节。用于控制CZ过程的常规控制模型依赖于线性控制（PID）来控制在直径和拉速之间的时域中定义的二次关系的非线性系统。本发明将直径和拉速之间的时域中的二次关系变换成在晶锭的弯月面锥度与拉速之间的长度域中的简单的线性关系。本发明应用在长度域内工作的线性控制（改进的PID），并且控制在长度域中具有晶锭锥度和拉速之间的线性关系的系统，以控制生长中的硅锭的直径。

3. 发明申请

US20120186512A1 PROCEDURE FOR IN-SITU DETERMINATION OF THERMAL GRADIENTS AT THE CRYSTAL GROWTH FRONT 有权
标题翻译：在晶体生长前沿测定热梯度的程序
公开(公告)号：US20120186512A1
公开(公告)日：2012-07-26
申请号：US13434167
申请日：2012-03-29
申请人： Benno Orschel , Andrzej Buczkowski , Joel Kearns , Keiichi Takanashi , Volker Todt
发明人： Benno Orschel , Andrzej Buczkowski , Joel Kearns , Keiichi Takanashi , Volker Todt
IPC分类号： C30B15/22 , C30B15/30
CPC分类号： C30B15/22 , C30B15/203 , C30B29/06 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032 , Y10T117/1036 , Y10T117/104 , Y10T117/1044 , Y10T117/1048 , Y10T117/1052 , Y10T117/1056 , Y10T117/106 , Y10T117/1064 , Y10T117/1068 , Y10T117/1072
摘要： A method and apparatus for growing a semiconductor crystal include pulling the semiconductor crystal from melt at a pull speed and modulating the pull speed by combining a periodic pull speed with an average speed. The modulation of the pull speed allows in-situ determination of characteristic temperature gradients in the melt and in the crystal during crystal formation. The temperature gradients may be used to control relevant process parameters that affect morphological stability or intrinsic material properties in the finished crystal such as for instance the target pull speed of the crystal or the melt gap, which determines the thermal gradient in the crystal during growth.
摘要翻译：用于生长半导体晶体的方法和装置包括以拉速从熔体中拉出半导体晶体，并通过组合周期性拉速与平均速度来调制拉速。拉速的调制允许在晶体形成期间原位测定熔体和晶体中的特征温度梯度。温度梯度可用于控制影响成品晶体的形态稳定性或本征材料性质的相关工艺参数，例如晶体的目标拉速或熔体间隙，这决定了生长过程中晶体的热梯度。

4. 发明申请

US20100206219A1 METHOD AND APPARATUS FOR CONTROLLING DIAMETER OF A SILICON CRYSTAL INGOT IN A GROWTH PROCESS 有权
公开(公告)号：US20100206219A1
公开(公告)日：2010-08-19
申请号：US12719405
申请日：2010-03-08
申请人： Benno Orschel , Joel Kearns , Keiichi Takanashi , Volker Todt
发明人： Benno Orschel , Joel Kearns , Keiichi Takanashi , Volker Todt
IPC分类号： C30B15/24
CPC分类号： C30B15/22 , C30B29/06 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032
摘要： An improvement to a method and an apparatus for growing a monocrystalline silicon ingot from silicon melt according to the CZ process. The improvement performs defining an error between a target taper of a meniscus and a measured taper, and translating the taper error into a feedback adjustment to a pull-speed of the silicon ingot. The conventional control model for controlling the CZ process relies on linear control (PID) controlling a non-linear system of quadratic relationship defined in the time domain between the diameter and the pull-speed. The present invention transforms the quadratic relationship in the time domain between the diameter and the pull-speed into a simile, linear relationship in the length domain between a meniscus taper of the ingot and the pull-speed. The present invention applies a linear control (modified PID) which operates in the length domain, and controls a system that has a linear relationship between the ingot taper and the pull-speed in the length domain to control the diameter of a growing silicon ingot.

5. 发明授权

US5023058A Ampoule for crystal-growing furnace 失效
标题翻译：用于晶体生长炉的安瓿
公开(公告)号：US5023058A
公开(公告)日：1991-06-11
申请号：US472232
申请日：1990-01-30
申请人： John F. Klein , Joel Kearns , Jerry Gonen
发明人： John F. Klein , Joel Kearns , Jerry Gonen
IPC分类号： C30B11/00 , C30B30/08
CPC分类号： C30B30/08 , C30B11/00 , C30B11/002 , C30B29/42 , Y10S117/901 , Y10T117/1092
摘要： An ampoule is designed for inclusion within a multi-zone furnace which forms particularly well in space. The ampoule includes an outer quartz wall which has outward projections supported by complementary members of a space furnace and minimizes the transferral of vibrational forces through the ampoule. An inner quartz containment member includes a hollow projection for holding a semiconductor seed, the containment member extending toward a charge containment section. A tube is positioned between an outward end of the charge and the interior wall of the ampoule for maintaining the charge in place during space travel. Further, the tube serves as a vapor chamber for accommodating overpressurization of a vapor component such as arsenide, in the case a gallium arsenide crystal is being grown. The ability to accommodate overpressurization of the vapor allows a uniform and homogeneous single crystal to be grown.
摘要翻译：安瓿被设计成包含在多区域炉中，其在空间中形成特别好。安瓿包括外部石英壁，其具有由空间炉的互补构件支撑的向外突出部，并且使通过安瓿的振动力的传递最小化。内部石英容纳构件包括用于保持半导体种子的中空突起，该容纳构件朝向电荷容纳部延伸。管子位于电荷的外端和安瓿的内壁之间，用于在空间行进期间将电荷保持在适当位置。此外，在生长砷化镓晶体的情况下，该管用作容纳蒸气成分例如砷化物的过压的蒸气室。适应蒸汽过压的能力允许生长均匀且均匀的单晶。

6. 发明授权

US08012255B2 Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process 有权
标题翻译：在生长过程中控制硅晶锭的直径的方法和装置
公开(公告)号：US08012255B2
公开(公告)日：2011-09-06
申请号：US12184016
申请日：2008-07-31
申请人： Benno Orschel , Joel Kearns , Keiichi Takanashi , Volker Todt
发明人： Benno Orschel , Joel Kearns , Keiichi Takanashi , Volker Todt
IPC分类号： C30B15/22
CPC分类号： C30B15/22 , C30B29/06 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032
摘要： An improvement to a method and an apparatus for growing a monocrystalline silicon ingot from silicon melt according to the CZ process. The improvement performs defining an error between a target taper of a meniscus and a measured taper, and translating the taper error into a feedback adjustment to a pull-speed of the silicon ingot. The conventional control model for controlling the CZ process relies on linear control (PID) controlling a non-linear system of quadratic relationship defined in the time domain between the diameter and the pull-speed. The present invention transforms the quadratic relationship in the time domain between the diameter and the pull-speed into a simile, linear relationship in the length domain between a meniscus taper of the ingot and the pull-speed. The present invention applies a linear control (modified PID) which operates in the length domain, and controls a system that has a linear relationship between the ingot taper and the pull-speed in the length domain to control the diameter of a growing silicon ingot.
摘要翻译：根据CZ工艺从硅熔体生长单晶硅锭的方法和设备的改进。该改进执行定义弯液面的目标锥度和测量的锥度之间的误差，并将锥度误差转换为硅锭的拉速的反馈调节。用于控制CZ过程的常规控制模型依赖于线性控制（PID）来控制在直径和拉速之间的时域中定义的二次关系的非线性系统。本发明将直径和拉速之间的时域中的二次关系变换成在晶锭的弯月面锥度与拉速之间的长度域中的简单的线性关系。本发明应用在长度域内工作的线性控制（改进的PID），并且控制在长度域中具有晶锭锥度和拉速之间的线性关系的系统，以控制生长中的硅锭的直径。

7. 发明申请

US20100024716A1 METHOD AND APPARATUS FOR CONTROLLING DIAMETER OF A SILICON CRYSTAL INGOT IN A GROWTH PROCESS 有权
标题翻译：用于控制生长过程中硅晶体直径的方法和装置
公开(公告)号：US20100024716A1
公开(公告)日：2010-02-04
申请号：US12184016
申请日：2008-07-31
申请人： Benno Orschel , Joel Kearns , Keiichi Takanashi , Volker Todt
发明人： Benno Orschel , Joel Kearns , Keiichi Takanashi , Volker Todt
IPC分类号： C30B15/20
CPC分类号： C30B15/22 , C30B29/06 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032
摘要： An improvement to a method and an apparatus for growing a monocrystalline silicon ingot from silicon melt according to the CZ process. The improvement performs defining an error between a target taper of a meniscus and a measured taper, and translating the taper error into a feedback adjustment to a pull-speed of the silicon ingot. The conventional control model for controlling the CZ process relies on linear control (PID) controlling a non-linear system of quadratic relationship defined in the time domain between the diameter and the pull-speed. The present invention transforms the quadratic relationship in the time domain between the diameter and the pull-speed into a simile, linear relationship in the length domain between a meniscus taper of the ingot and the pull-speed. The present invention applies a linear control (modified PID) which operates in the length domain, and controls a system that has a linear relationship between the ingot taper and the pull-speed in the length domain to control the diameter of a growing silicon ingot.
摘要翻译：根据CZ工艺从硅熔体生长单晶硅锭的方法和设备的改进。该改进执行定义弯液面的目标锥度和测量的锥度之间的误差，并将锥度误差转换为硅锭的拉速的反馈调节。用于控制CZ过程的常规控制模型依赖于线性控制（PID）来控制在直径和拉速之间的时域中定义的二次关系的非线性系统。本发明将直径和拉速之间的时域中的二次关系变换成在晶锭的弯月面锥度与拉速之间的长度域中的简单的线性关系。本发明应用在长度域内工作的线性控制（改进的PID），并且控制在长度域中具有晶锭锥度和拉速之间的线性关系的系统，以控制生长中的硅锭的直径。

8. 发明申请

US20100024718A1 Procedure for in-situ determination of thermal gradients at the crystal growth front 有权
标题翻译：在晶体生长前沿原位测定热梯度的程序
公开(公告)号：US20100024718A1
公开(公告)日：2010-02-04
申请号：US12221229
申请日：2008-07-31
申请人： Benno Orschel , Andrzej Buczkowski , Joel Kearns , Keiichi Takanashi , Volker Todt
发明人： Benno Orschel , Andrzej Buczkowski , Joel Kearns , Keiichi Takanashi , Volker Todt
IPC分类号： C30B15/22
CPC分类号： C30B15/22 , C30B15/203 , C30B29/06 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032 , Y10T117/1036 , Y10T117/104 , Y10T117/1044 , Y10T117/1048 , Y10T117/1052 , Y10T117/1056 , Y10T117/106 , Y10T117/1064 , Y10T117/1068 , Y10T117/1072
摘要： A method and apparatus for growing a semiconductor crystal include pulling the semiconductor crystal from melt at a pull speed and modulating the pull speed by combining a periodic pull speed with an average speed. The modulation of the pull speed allows in-situ determination of characteristic temperature gradients in the melt and in the crystal during crystal formation. The temperature gradients may be used to control relevant process parameters that affect morphological stability or intrinsic material properties in the finished crystal such as for instance the target pull speed of the crystal or the melt gap, which determines the thermal gradient in the crystal during growth.
摘要翻译：用于生长半导体晶体的方法和装置包括以拉速从熔体中拉出半导体晶体，并通过组合周期性拉速与平均速度来调制拉速。拉速的调制允许在晶体形成期间原位测定熔体和晶体中的特征温度梯度。温度梯度可用于控制影响成品晶体的形态稳定性或本征材料性质的相关工艺参数，例如晶体的目标拉速或熔体间隙，这决定了生长过程中晶体的热梯度。

9. 发明授权

US08221545B2 Procedure for in-situ determination of thermal gradients at the crystal growth front 有权
标题翻译：在晶体生长前沿原位测定热梯度的程序
公开(公告)号：US08221545B2
公开(公告)日：2012-07-17
申请号：US12221229
申请日：2008-07-31
申请人： Benno Orschel , Andrzej Buczkowski , Joel Kearns , Keiichi Takanashi , Volker Todt
发明人： Benno Orschel , Andrzej Buczkowski , Joel Kearns , Keiichi Takanashi , Volker Todt
IPC分类号： C30B15/20
CPC分类号： C30B15/22 , C30B15/203 , C30B29/06 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032 , Y10T117/1036 , Y10T117/104 , Y10T117/1044 , Y10T117/1048 , Y10T117/1052 , Y10T117/1056 , Y10T117/106 , Y10T117/1064 , Y10T117/1068 , Y10T117/1072
摘要： A method and apparatus for growing a semiconductor crystal include pulling the semiconductor crystal from melt at a pull speed and modulating the pull speed by combining a periodic pull speed with an average speed. The modulation of the pull speed allows in-situ determination of characteristic temperature gradients in the melt and in the crystal during crystal formation. The temperature gradients may be used to control relevant process parameters that affect morphological stability or intrinsic material properties in the finished crystal such as for instance the target pull speed of the crystal or the melt gap, which determines the thermal gradient in the crystal during growth.
摘要翻译：用于生长半导体晶体的方法和装置包括以拉速从熔体中拉出半导体晶体，并通过组合周期性拉速与平均速度来调制拉速。拉速的调制允许在晶体形成期间原位测定熔体和晶体中的特征温度梯度。温度梯度可用于控制影响成品晶体的形态稳定性或本征材料性质的相关工艺参数，例如晶体的目标拉速或熔体间隙，这决定了生长过程中晶体的热梯度。

10. 发明授权

US06648967B2 Crystal-pulling apparatus for pulling and growing a monocrystalline silicon ingot, and method therefor 有权
标题翻译：用于牵拉和生长单晶硅锭的晶体拉制装置及其方法
公开(公告)号：US06648967B2
公开(公告)日：2003-11-18
申请号：US09989352
申请日：2001-11-20
申请人： Volker R. Todt , Rocky Oakley , Peter Wildes , Fritz Kirscht , Haresh Siriwardane , Joel Kearns
发明人： Volker R. Todt , Rocky Oakley , Peter Wildes , Fritz Kirscht , Haresh Siriwardane , Joel Kearns
IPC分类号： C30B3500
CPC分类号： C30B29/06 , C30B15/10 , C30B15/14 , Y10S117/90 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072
摘要： A crystal-pulling apparatus for pulling and growing a monocrystalline silicon ingot comprises a quartz crucible placed in a chamber and containing a silicon melt from which a monocrystalline silicon ingot will be pulled, a graphite crucible container to support the quartz crucible by surrounding the outer circumferential surface and external base surface of crucible, and a heater provided around the outer circumferential surface of the crucible container to heat the silicon melt. This apparatus further comprises a spacer having a top surface whose area is smaller than the base area of the quartz crucible and having a melting point higher than that of silicon, is inserted between the base of the quartz crucible and the base of the crucible container while the monocrystalline silicon ingot is pulled. According to this invention, it is possible to obtain an N-type monocrystalline silicon ingot heavily doped with impurities and having a low resistivity in which the oxygen concentration is desirably controlled, or it is possible to obtain a monocrystalline silicon ingot of which the seed end retains an oxygen concentration determined by natural equilibrium conditions, while the cylindrical portion and tail end contain a relatively constant oxygen concentration, being relieved of a sharp fall in oxygen supply which is observed in a conventional apparatus.
摘要翻译：用于牵拉和生长单晶硅锭的晶体拉制装置包括放置在腔室中的石英坩埚，并且包含将从其中拉出单晶硅锭的硅熔体，石墨坩埚容器，用于通过围绕外圆周来支撑石英坩埚坩埚的表面和外部基面，以及设置在坩埚容器的外周表面周围的加热硅熔体的加热器。该装置还包括具有顶表面的间隔件，该顶表面的面积小于石英坩埚的基部面积并且具有高于硅的熔点，被插入石英坩埚的基部和坩埚容器的基部之间，同时单晶硅锭被拉。根据本发明，可以获得重掺杂有杂质且具有低电阻率的N型单晶硅锭，其中希望控制氧浓度，或者可以获得晶种结晶的单晶硅锭保持由自然平衡条件确定的氧气浓度，而圆柱形部分和尾端包含相对恒定的氧浓度，从而避免了在常规装置中观察到的供氧急剧下降。

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