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    • 1. 发明授权
    • Apparatus and methods for reducing tool-induced shift during overlay metrology
    • 在重叠计量时减少工具引起的移位的装置和方法
    • US07433039B1
    • 2008-10-07
    • US10913188
    • 2004-08-06
    • Vladimir LevinskiIlan Sela
    • Vladimir LevinskiIlan Sela
    • G01B11/00
    • G03F7/70633G03F7/70616
    • Disclosed are apparatus and methods for determining a minimum tool-induced shift (TIS) during an overlay metrology procedure. In a specific embodiment, a method of determining overlay or misalignment error on a target is disclosed. For a predefined number of positions of a target within a field of view (FOV) of a metrology tool, the following operations are performed: (i) determining a tool-induced shift (TIS) parameter value for each predefined position of the target within the FOV based on at least one overlay measurement obtained from the target at the each position (for example, based on overlay measurements at 0 and 180 degrees of wafer orientation) and (ii) determining a minimum TIS parameter value and its corresponding FOV position from the plurality of determined TIS parameters values at the predefined positions of the target within the FOV. The FOV position that corresponds to the minimum TIS is then defined as an appropriate position for the actual overlay measurement and the value of minimum TIS is used for overlay correction.
    • 公开了用于在覆盖计量过程期间确定最小工具引起的移动(TIS)的装置和方法。 在具体实施例中,公开了一种确定目标上的重叠或未对准误差的方法。 对于计量工具的视场(FOV)中的目标的预定数量的位置,执行以下操作:(i)确定目标的每个预定义位置的工具引起的移动(TIS)参数值, 基于从每个位置处的目标获得的至少一个覆盖测量的FOV(例如,基于在0和180度晶片取向的覆盖测量),以及(ii)确定最小TIS参数值及其对应的FOV位置 在FOV内的目标的预定义位置处的多个确定的TIS参数值。 然后将对应于最小TIS的FOV位置定义为实际覆盖测量的适当位置,并且将最小TIS的值用于覆盖校正。
    • 7. 发明申请
    • ORDER SELECTED OVERLAY METROLOGY
    • 订单选择重叠度量
    • US20070279630A1
    • 2007-12-06
    • US11754892
    • 2007-05-29
    • Daniel KandelVladimir LevinskiMichael AdelJoel Seligson
    • Daniel KandelVladimir LevinskiMichael AdelJoel Seligson
    • G01B11/00
    • G03F7/70633
    • Disclosed are apparatus and methods for measuring a characteristic, such as overlay, of a semiconductor target. In general, order-selected imaging and/or illumination is performed while collecting an image from a target using a metrology system. In one implementation, tunable spatial modulation is provided only in the imaging path of the system. In other implementations, tunable spatial modulation is provided in both the illumination and imaging paths of the system. In a specific implementation, tunable spatial modulation is used to image side-by-side gratings with diffraction orders ±n. The side-by-side gratings may be in different layers or the same layer of a semiconductor wafer. The overlay between the structures is typically found by measuring the distance between centers symmetry of the gratings. In this embodiment, only orders ±n for a given choice of n (where n is an integer and not equal to zero) are selected, and the gratings are only imaged with these diffraction orders.
    • 公开了用于测量半导体靶的特性(例如覆盖)的装置和方法。 通常,在使用度量系统从目标物收集图像的同时执行顺序选择的成像和/或照明。 在一个实现中,仅在系统的成像路径中提供可调谐空间调制。 在其他实施方式中,在系统的照明和成像路径中提供可调谐的空间调制。 在具体实现中,可调谐空间调制用于以衍射级±n对并行光栅进行成像。 并排光栅可以在不同的层或相同的半导体晶片层中。 通常通过测量光栅的中心对称性之间的距离来发现结构之间的覆盖。 在本实施例中,对于给定的n(其中n是整数且不等于零)的选择,仅选择±n,并且光栅仅以这些衍射级成像。
    • 8. 发明授权
    • Use of overlay diagnostics for enhanced automatic process control
    • 使用覆盖诊断功能进行增强的自动过程控制
    • US07111256B2
    • 2006-09-19
    • US10438963
    • 2003-05-14
    • Joel L. SeligsonMark GhinovkerJohn RobinsonPavel IziksonMichael E. AdelBoris SimkinDavid TulipmanVladimir Levinski
    • Joel L. SeligsonMark GhinovkerJohn RobinsonPavel IziksonMichael E. AdelBoris SimkinDavid TulipmanVladimir Levinski
    • G06F17/50
    • G03F7/705G03F7/70516G03F7/70633
    • Disclosed are methods and apparatus for analyzing the quality of overlay targets. In one embodiment, a method of extracting data from an overlay target is disclosed. Initially, image information or one or more intensity signals of the overlay target are provided. An overlay error is obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. A systematic error metric is also obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. For example, the systematic error may indicate an asymmetry metric for one or more portions of the overlay target. A noise metric is further obtained from the overlay target by applying a statistical model to the image information or the intensity signal(s) of the overlay target. Noise metric characterizes noise, such as a grainy background, associated with the overlay target. In other embodiments, an overlay and/or stepper analysis procedure is then performed based on the systematic error metric and/or the noise metric, as well as the overlay data.
    • 公开了分析覆盖目标质量的方法和装置。 在一个实施例中,公开了一种从覆盖目标提取数据的方法。 首先,提供覆盖目标的图像信息或一个或多个强度信号。 通过分析覆盖目标的图像信息或强度信号,从覆盖目标获得重叠错误。 通过分析覆盖目标的图像信息或强度信号也可以从覆盖目标获得系统误差度量。 例如,系统误差可以指示覆盖目标的一个或多个部分的不对称度量。 通过将统计模型应用于覆盖目标的图像信息或强度信号,从覆盖目标进一步获得噪声度量。 噪声度量表示与覆盖目标相关联的噪声,例如粒状背景。 在其他实施例中,然后基于系统误差度量和/或噪声度量以及覆盖数据来执行覆盖和/或步进分析程序。