会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 6. 发明授权
    • Processes for chemical-mechanical polishing of a semiconductor wafer
    • 半导体晶片的化学机械抛光工艺
    • US06579798B2
    • 2003-06-17
    • US09960349
    • 2001-09-24
    • Basab ChatterjeeMona EissaChad KaneshigeVincent KorthuisBarry LanierSatyavolu Papa Rao
    • Basab ChatterjeeMona EissaChad KaneshigeVincent KorthuisBarry LanierSatyavolu Papa Rao
    • H01L21302
    • H01L21/02074H01L21/3212H01L21/7684H01L21/76879
    • A process for polishing a semiconductor wafer includes the steps of providing a plurality of wafers, forming a first layer, such as a barrier layer, over at least a portion of each wafer, and forming at least one layer including copper over at least a portion of each first layer. The process also includes the steps of providing a first polishing pad, providing a buffing pad, providing a plurality of operatively connected wafer carriers, and disposing a wafer within each of the wafer carriers. The process further includes the steps of disposing a first slurry composition on the first polishing pad and polishing a first wafer with the first polishing pad for a first length of time, in which the first polishing pad substantially removes the copper layer of the first wafer. The process also includes the steps of simultaneously buffing a second wafer with the buffing pad for a second length of time, in which the first length of time is greater than the second length of time, and rinsing the buffing pad and the buffed wafer with a moisture maintenance compound for at least a portion of the time between the completion of the second length of time and the first length of time. Moreover, the moisture maintenance compound substantially prevents drying of the buffed wafer between the completion of the second length of time and the first length of time.
    • 一种用于抛光半导体晶片的方法包括以下步骤:在每个晶片的至少一部分上形成多个晶片,形成诸如阻挡层的第一层,并在至少一部分上形成包括铜的至少一层 的每个第一层。 该方法还包括以下步骤:提供第一抛光垫,提供抛光垫,提供多个可操作连接的晶片载体,以及在每个晶片载体内设置晶片。 该方法还包括以下步骤:将第一浆料组合物设置在第一抛光垫上,并用第一抛光垫抛光第一晶片长达一段时间,其中第一抛光垫基本上移除第一晶片的铜层。 该方法还包括以下步骤:将第二晶片与抛光垫同时抛光第二时间长度,其中第一时间长度大于第二时间长度,以及用抛光垫和抛光晶片冲洗抛光垫 水分维持化合物,用于在第二时间长度的完成与第一时间长度之间的至少一部分时间。 此外,水分保持化合物基本上防止在第二时间长度的完成与第一时间长度之间的抛光晶片的干燥。