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1. 发明申请

US20060003267A1 Nano-structure and method of fabricating nano-structures 审中-公开
标题翻译：纳米结构和制造纳米结构的方法
公开(公告)号：US20060003267A1
公开(公告)日：2006-01-05
申请号：US11215985
申请日：2005-08-31
申请人： Sriram Ramamoorthi , Peter Mardilovich , Pavel Kornilovich , Vincent Korthuis
发明人： Sriram Ramamoorthi , Peter Mardilovich , Pavel Kornilovich , Vincent Korthuis
IPC分类号： G03C5/00
CPC分类号： H01L21/76838 , C23C4/123 , C23C4/18 , C30B29/68 , G03F7/40 , H01L21/4846 , H05K3/20 , H05K3/205 , H05K2203/0117 , H05K2203/025
摘要： In one embodiment, a method for fabricating a nano-structure includes forming a feature on a substrate, depositing multiple layers of material over the substrate and feature to form a multi-layer stack, depositing a film over the multi-layer stack, removing a portion of the film and the multi-layer stack to expose edges of the layers of material, and removing portions of the layers of material to form trenches at a surface of the nano-structure.
摘要翻译：在一个实施例中，用于制造纳米结构的方法包括在衬底上形成特征，在衬底上沉积多层材料并且特征以形成多层堆叠，在多层堆叠上沉积膜，膜和多层叠层的部分以暴露材料层的边缘，以及去除材料层的部分以在纳米结构的表面形成沟槽。

2. 发明授权

US07049002B2 Photocatalytically-activated self-cleaning article and method of making same 有权
公开(公告)号：US07049002B2
公开(公告)日：2006-05-23
申请号：US10608486
申请日：2003-06-27
申请人： Charles B. Greenberg , Caroline S. Harris , Vincent Korthuis , Luke A. Kutilek , David E. Singleton , Janos Szanyi , James P. Thiel
发明人： Charles B. Greenberg , Caroline S. Harris , Vincent Korthuis , Luke A. Kutilek , David E. Singleton , Janos Szanyi , James P. Thiel
IPC分类号： B32B17/06
CPC分类号： C03C17/23 , B01J35/002 , C03C17/245 , C03C17/2456 , C03C17/25 , C03C17/256 , C03C17/3417 , C03C2217/21 , C03C2217/212 , C03C2217/229 , C03C2217/71 , C03C2218/112 , C03C2218/113 , C03C2218/152 , C03C2218/154 , C03C2218/156 , Y10T428/265 , Y10T428/31855
摘要： A method and article are disclosed wherein a substrate is provided with a photocatalytically-activated self-cleaning surface by forming a photocatalytically-activated self-cleaning coating on the substrate by spray pyrolysis chemical vapor deposition or magnetron sputter vacuum deposition. The coating has a thickness of at least about 500 Angstroms to limit sodium-ion poisoning to a portion of the coating facing the substrate. Alternatively, a sodium ion diffusion barrier layer is deposited over the substrate prior to the deposition of the photocatalytically-activated self-cleaning coating to prevent sodium ion poisoning of the photocatalytically-activated self-cleaning coating. The substrate includes glass substrates, including glass sheet and continuous float glass ribbon.

3. 发明授权

US06413581B1 Photocatalytically-activated self-cleaning article and method of making same 有权
标题翻译：光催化活性自清洁用品及其制作方法
公开(公告)号：US06413581B1
公开(公告)日：2002-07-02
申请号：US09282943
申请日：1999-04-01
申请人： Charles B. Greenberg , Caroline S. Harris , Vincent Korthuis , Luke A. Kutilek , David E. Singleton , Janos Szanyi , James P. Thiel
发明人： Charles B. Greenberg , Caroline S. Harris , Vincent Korthuis , Luke A. Kutilek , David E. Singleton , Janos Szanyi , James P. Thiel
IPC分类号： C23C1640
CPC分类号： C03C17/23 , B01J35/002 , C03C17/245 , C03C17/2456 , C03C17/25 , C03C17/256 , C03C17/3417 , C03C2217/21 , C03C2217/212 , C03C2217/229 , C03C2217/71 , C03C2218/112 , C03C2218/113 , C03C2218/152 , C03C2218/154 , C03C2218/156 , Y10T428/265 , Y10T428/31855
摘要： A method and article are disclosed wherein a substrate is provided with a photocatalytically-activated self-cleaning surface by forming a photocatalytically-activated self-cleaning coating on the substrate by spray pyrolysis chemical vapor deposition or magnetron sputter vacuum deposition. The coating has a thickness of at least about 500 Angstroms to limit sodium-ion poisoning to a portion of the coating facing the substrate. Alternatively, a sodium ion diffusion barrier layer is deposited over the substrate prior to the deposition of the photocatalytically-activated self-cleaning coating to prevent sodium ion poisoning of the photocatalytically-activated self-cleaning coating. The substrate includes glass substrates, including glass sheet and continuous float glass ribbon.
摘要翻译：公开了一种方法和制品，其中通过在喷涂热分解化学气相沉积或磁控溅射真空沉积法上在基底上形成光催化活化的自清洁涂层，使基底具有光催化活化的自清洁表面。涂层具有至少约500埃的厚度，以限制对面向基底的涂层的一部分的钠离子中毒。或者，在沉积光催化活化的自清洁涂层之前，在衬底上沉积钠离子扩散阻挡层，以防止光催化活化的自清洁涂层的钠离子中毒。基板包括玻璃基板，包括玻璃板和连续浮法玻璃带。

4. 发明授权

US06722159B2 Photocatalytically-activated self-cleaning article and method of making same 有权
标题翻译：光催化活性自清洁用品及其制作方法
公开(公告)号：US06722159B2
公开(公告)日：2004-04-20
申请号：US10075316
申请日：2002-02-14
申请人： Charles B. Greenberg , Caroline S. Harris , Vincent Korthuis , Luke A. Kutilek , David E. Singleton , Janos Szanyi , James P. Thiel
发明人： Charles B. Greenberg , Caroline S. Harris , Vincent Korthuis , Luke A. Kutilek , David E. Singleton , Janos Szanyi , James P. Thiel
IPC分类号： C03C17245
CPC分类号： C03C17/23 , B01J35/002 , C03C17/245 , C03C17/2456 , C03C17/25 , C03C17/256 , C03C17/3417 , C03C2217/21 , C03C2217/212 , C03C2217/229 , C03C2217/71 , C03C2218/112 , C03C2218/113 , C03C2218/152 , C03C2218/154 , C03C2218/156 , Y10T428/265 , Y10T428/31855
摘要： A method and article are disclosed wherein a substrate is provided with a photocatalytically-activated self-cleaning surface by forming a photocatalytically-activated self-cleaning coating on the substrate by spray pyrolysis chemical vapor deposition or magnetron sputter vacuum deposition. The coating has a thickness of at least about 500 Angstroms to limit sodium-ion poisoning to a portion of the coating facing the substrate. Alternatively, a sodium ion diffusion barrier layer is deposited over the substrate prior to the deposition of the photocatalytically-activated self-cleaning coating to prevent sodium ion poisoning of the photocatalytically-activated self-cleaning coating. The substrate includes glass substrates, including glass sheet and continuous float glass ribbon.
摘要翻译：公开了一种方法和制品，其中通过在喷涂热分解化学气相沉积或磁控溅射真空沉积法上在基底上形成光催化活化的自清洁涂层，使基底具有光催化活化的自清洁表面。涂层具有至少约500埃的厚度，以限制对面向基底的涂层的一部分的钠离子中毒。或者，在沉积光催化活化的自清洁涂层之前，在衬底上沉积钠离子扩散阻挡层，以防止光催化活化的自清洁涂层的钠离子中毒。基板包括玻璃基板，包括玻璃板和连续浮法玻璃带。

5. 发明申请

US20120012840A1 Thin-film Transistor (TFT) With A Bi-layer Channel 有权
标题翻译：具有双层通道的薄膜晶体管（TFT）
公开(公告)号：US20120012840A1
公开(公告)日：2012-01-19
申请号：US13255137
申请日：2009-03-31
申请人： Vincent Korthuis , Randy Hoffman
发明人： Vincent Korthuis , Randy Hoffman
IPC分类号： H01L29/786 , H01L33/08 , H01L21/44
CPC分类号： H01L29/7869 , H01L29/78696
摘要： In at least some embodiments, a thin-film transistor (TFT) includes a gate electrode and a gate dielectric covering the gate dielectric. The TFT also includes a source electrode and a drain electrode adjacent the gate dielectric. The TFT also includes a bi-layer channel between the source electrode and the drain electrode, the bi-layer channel having a zinc indium oxide (ZIO) layer positioned adjacent the gate dielectric and a zinc tin oxide (ZTO) layer that covers the ZIO layer.
摘要翻译：在至少一些实施例中，薄膜晶体管（TFT）包括覆盖栅极电介质的栅极电极和栅极电介质。 TFT还包括邻近栅极电介质的源电极和漏电极。 TFT还包括在源电极和漏电极之间的双层通道，双层通道具有邻近栅电介质的锌铟氧化物（ZIO）层和覆盖ZIO的锌锡氧化物（ZTO）层层。

6. 发明授权

US06579798B2 Processes for chemical-mechanical polishing of a semiconductor wafer 有权
标题翻译：半导体晶片的化学机械抛光工艺
公开(公告)号：US06579798B2
公开(公告)日：2003-06-17
申请号：US09960349
申请日：2001-09-24
申请人： Basab Chatterjee , Mona Eissa , Chad Kaneshige , Vincent Korthuis , Barry Lanier , Satyavolu Papa Rao
发明人： Basab Chatterjee , Mona Eissa , Chad Kaneshige , Vincent Korthuis , Barry Lanier , Satyavolu Papa Rao
IPC分类号： H01L21302
CPC分类号： H01L21/02074 , H01L21/3212 , H01L21/7684 , H01L21/76879
摘要： A process for polishing a semiconductor wafer includes the steps of providing a plurality of wafers, forming a first layer, such as a barrier layer, over at least a portion of each wafer, and forming at least one layer including copper over at least a portion of each first layer. The process also includes the steps of providing a first polishing pad, providing a buffing pad, providing a plurality of operatively connected wafer carriers, and disposing a wafer within each of the wafer carriers. The process further includes the steps of disposing a first slurry composition on the first polishing pad and polishing a first wafer with the first polishing pad for a first length of time, in which the first polishing pad substantially removes the copper layer of the first wafer. The process also includes the steps of simultaneously buffing a second wafer with the buffing pad for a second length of time, in which the first length of time is greater than the second length of time, and rinsing the buffing pad and the buffed wafer with a moisture maintenance compound for at least a portion of the time between the completion of the second length of time and the first length of time. Moreover, the moisture maintenance compound substantially prevents drying of the buffed wafer between the completion of the second length of time and the first length of time.
摘要翻译：一种用于抛光半导体晶片的方法包括以下步骤：在每个晶片的至少一部分上形成多个晶片，形成诸如阻挡层的第一层，并在至少一部分上形成包括铜的至少一层的每个第一层。该方法还包括以下步骤：提供第一抛光垫，提供抛光垫，提供多个可操作连接的晶片载体，以及在每个晶片载体内设置晶片。该方法还包括以下步骤：将第一浆料组合物设置在第一抛光垫上，并用第一抛光垫抛光第一晶片长达一段时间，其中第一抛光垫基本上移除第一晶片的铜层。该方法还包括以下步骤：将第二晶片与抛光垫同时抛光第二时间长度，其中第一时间长度大于第二时间长度，以及用抛光垫和抛光晶片冲洗抛光垫水分维持化合物，用于在第二时间长度的完成与第一时间长度之间的至少一部分时间。此外，水分保持化合物基本上防止在第二时间长度的完成与第一时间长度之间的抛光晶片的干燥。

7. 发明授权

US6027766A Photocatalytically-activated self-cleaning article and method of making same 失效
公开(公告)号：US6027766A
公开(公告)日：2000-02-22
申请号：US899257
申请日：1997-07-23
申请人： Charles B. Greenberg , Caroline S. Harris , Vincent Korthuis , Luke A. Kutilek , David E. Singleton , Janos Szanyi , James P. Thiel
发明人： Charles B. Greenberg , Caroline S. Harris , Vincent Korthuis , Luke A. Kutilek , David E. Singleton , Janos Szanyi , James P. Thiel
IPC分类号： B01J35/00 , B01J35/02 , B32B9/00 , B32B17/06 , C03B18/02 , C03C17/23 , C03C17/245 , C03C17/25 , C03C17/34 , C23C14/08 , C23C16/40
CPC分类号： C03C17/23 , C03C17/245 , C03C17/2456 , C03C17/25 , C03C17/256 , C03C17/3417 , B01J35/002 , C03C2217/21 , C03C2217/212 , C03C2217/229 , C03C2217/71 , C03C2218/112 , C03C2218/113 , C03C2218/152 , C03C2218/154 , C03C2218/156 , Y10T428/265 , Y10T428/31855
摘要： A method and article are disclosed wherein a substrate is provided with a photocatalytically-activated self-cleaning surface by forming a photocatalytically-activated self-cleaning coating on the substrate by spray pyrolysis chemical vapor deposition or magnetron sputter vacuum deposition. The coating has a thickness of at least about 500 Angstroms to limit sodium-ion poisoning to a portion of the coating facing the substrate. Alternatively, a sodium ion diffusion barrier layer is deposited over the substrate prior to the deposition of the photocatalytically-activated self-cleaning coating to prevent sodium ion poisoning of the photocatalytically-activated self-cleaning coating. The substrate includes glass substrates, including glass sheet and continuous float glass ribbon.

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