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1. 发明申请

WO2017014948A1 SELECTIVE PROCESSING OF A WORKPIECE 审中-公开
标题翻译：选择性处理工作
公开(公告)号：WO2017014948A1
公开(公告)日：2017-01-26
申请号：PCT/US2016/041101
申请日：2016-07-06
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： AMATO, Mark R. , LEE, William Davis , RENO, Jillian
IPC分类号： H01L21/265 , H01L21/02 , H01L21/3065 , H01L21/324
CPC分类号： H01J37/3171 , C23C14/48 , H01J37/08 , H01J37/20 , H01J37/3026 , H01J2237/20214 , H01J2237/31761 , H01J2237/31766 , H01L21/265 , H01L21/425
摘要： Systems and methods for the selective processing of a particular portion of a workpiece are disclosed. For example, the outer portion may be processed by directing an ion beam toward a first position on the workpiece, where the ion beam extends beyond the outer edge of the workpiece at two first locations. The workpiece is then rotated relative to the ion beam about its center so that certain regions of the outer portion are exposed to the ion beam. The workpiece is then moved relative to the ion beam to a second position and rotated in the opposite direction so that all regions of the outer portion are exposed to the ion beam. This process may be repeated a plurality of times. The ion beam may perform any process, such as ion implantation, etching or deposition.
摘要翻译：公开了用于选择性处理工件的特定部分的系统和方法。例如，可以通过将离子束引导到工件上的第一位置来处理外部部分，其中离子束在两个第一位置处延伸超过工件的外边缘。然后工件相对于离子束绕其中心旋转，使得外部部分的某些区域暴露于离子束。然后将工件相对于离子束移动到第二位置并沿相反方向旋转，使得外部部分的所有区域暴露于离子束。该过程可以重复多次。离子束可以执行任何过程，例如离子注入，蚀刻或沉积。

2. 发明申请

WO2015116373A1 METHOD AND MECHANISM FOR EROSION DETECTION OF DEFINING APERTURES 审中-公开
标题翻译：用于腐蚀检测定义孔的方法和机理
公开(公告)号：WO2015116373A1
公开(公告)日：2015-08-06
申请号：PCT/US2015/011115
申请日：2015-01-13
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： TIMBERLAKE, David , AMATO, Mark R. , ROTH, Nathan
IPC分类号： H01L21/265 , H01J37/317 , H01L21/66
CPC分类号： H01J37/3171 , H01J37/244 , H01J2237/0213 , H01J2237/24495 , H01J2237/24535
摘要： A defining aperture plate having at least two differently sized apertures is used in conjunction with at least two charge collectors. Because of the difference in aperture width, the two charge collectors receive different amounts of ions, where the amount is proportional to the associated aperture width. By monitoring the ratio of the charge collected by the first charge collector to the charge collected by the second collector, the amount of erosion can be monitored and optionally compensated for.
摘要翻译：具有至少两个不同尺寸的孔的限定孔板与至少两个电荷收集器结合使用。由于孔径宽度的差异，两个电荷收集器接收不同量的离子，其中量与相关的孔径宽度成比例。通过监测由第一收集器收集的电荷与由第二收集器收集的电荷的比率，可以监测并且可选地补偿侵蚀量。

3. 发明申请

WO2017105910A1 SELECTIVE AREA IMPLANT OF A WORKPIECE 审中-公开
标题翻译：工件的选择区域植入
公开(公告)号：WO2017105910A1
公开(公告)日：2017-06-22
申请号：PCT/US2016/065061
申请日：2016-12-06
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： TYE, Jordan B. , AMATO, Mark R.
IPC分类号： H01L21/265 , H01J37/317 , H01L21/04 , H01L21/225 , H01L21/3115
CPC分类号： H01J37/3171 , H01J2237/31703 , H01L21/26506 , H01L21/68764
摘要： Apparatus and methods for the selective implanting of the outer portion of a workpiece are disclosed. A mask is disposed between the ion beam and the workpiece, having an aperture through which the ion beam passes. The aperture may have a concave first edge, forming using a radius equal to the inner radius of the outer portion of the workpiece. Further, the mask is affixed to a roplat such that the platen is free to rotate between a load/unload position and an operational position without moving the mask. In certain embodiments, the mask is affixed to the base of the roplat and has a first portion with an aperture that extends vertically upward from the base, and a second portion that is shaped so as not to interfere with the rotation of the platen. In other embodiments, the mask may be affixed to the arms of the roplat.
摘要翻译：公开了用于选择性注入工件外部的设备和方法。掩模设置在离子束和工件之间，具有离子束穿过的孔。该孔可以具有凹入的第一边缘，其使用等于工件外部的内半径的半径形成。此外，面罩被固定到压板上，使得压板在加载/卸载位置和操作位置之间自由旋转而不移动面罩。在某些实施例中，面罩被固定到罗皮的底部并且具有第一部分和第二部分，第一部分具有从底座垂直向上延伸的孔，并且第二部分被成形为不干扰压板的旋转。在其他实施例中，面罩可以被固定到手术刀的臂上。

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