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1. 发明授权

US06787458B1 Polymer memory device formed in via opening 失效
标题翻译：聚合物存储器件形成在通孔中
公开(公告)号：US06787458B1
公开(公告)日：2004-09-07
申请号：US10614397
申请日：2003-07-07
申请人： Nicholas H. Tripsas , Matthew S. Buynoski , Suzette K. Pangrle , Uzodinma Okoroanyanwu , Angela T. Hui , Christopher F. Lyons , Ramkumar Subramanian , Sergey D. Lopatin , Minh Van Ngo , Ashok M. Khathuria , Mark S. Chang , Patrick K. Cheung , Jane V. Oglesby
发明人： Nicholas H. Tripsas , Matthew S. Buynoski , Suzette K. Pangrle , Uzodinma Okoroanyanwu , Angela T. Hui , Christopher F. Lyons , Ramkumar Subramanian , Sergey D. Lopatin , Minh Van Ngo , Ashok M. Khathuria , Mark S. Chang , Patrick K. Cheung , Jane V. Oglesby
IPC分类号： H01L2144
CPC分类号： H01L27/285 , H01L2924/0002 , H01L2924/00
摘要： One aspect of the present invention relates to a method of fabricating a polymer memory device in a via. The method involves providing a semiconductor substrate having at least one metal-containing layer thereon, forming at least one copper contact in the metal-containing layer, forming at least one dielectric layer over the copper contact, forming at least one via in the dielectric layer to expose at least a portion of the copper contact, forming a polymer material in a lower portion of the via, and forming a top electrode material layer in an upper portion of the via.
摘要翻译：本发明的一个方面涉及在通孔中制造聚合物存储器件的方法。该方法包括提供其上具有至少一个含金属层的半导体衬底，在含金属层中形成至少一个铜触点，在铜触点上形成至少一个电介质层，在电介质层中形成至少一个通孔露出铜触点的至少一部分，在通孔的下部形成聚合物材料，并在通孔的上部形成顶部电极材料层。

2. 发明授权

US06753247B1 Method(s) facilitating formation of memory cell(s) and patterned conductive 失效
标题翻译：促进形成记忆体和图案化的导电聚合物膜的方法
公开(公告)号：US06753247B1
公开(公告)日：2004-06-22
申请号：US10285183
申请日：2002-10-31
申请人： Uzodinma Okoroanyanwu , Suzette K. Pangrle , Matthew S. Buynoski , Nicholas H. Tripsas , Mark S. Chang , Ramkumar Subramanian , Angela T. Hui
发明人： Uzodinma Okoroanyanwu , Suzette K. Pangrle , Matthew S. Buynoski , Nicholas H. Tripsas , Mark S. Chang , Ramkumar Subramanian , Angela T. Hui
IPC分类号： H01L214763
CPC分类号： G11C13/0014 , B82Y10/00 , G11C13/0016 , H01L27/285
摘要： A methodology for forming a memory cell is disclosed, wherein an organic polymer layer is formed over a conductive layer and an electrode layer is formed over the organic polymer layer. A first via is etched into the electrode and organic polymer layers, and a dielectric material is applied over the stack to at least fill in the first via. A second via is then etched into the dielectric material so as to expose and make the electrode layer available as a top electrode. A wordline is then formed over the dielectric material such that the top electrode is connected to the wordline by way of the second via. A memory device formed in accordance with the disclosed methodology includes a top electrode formed over an organic polymer layer, a conductive layer under the organic polymer layer, a via defined by a dielectric material and located above the top electrode, and a wordline formed over the dielectric material such that the top electrode is connected to the wordline by way of the via.
摘要翻译：公开了一种用于形成存储单元的方法，其中在导电层上形成有机聚合物层，并且在有机聚合物层上形成电极层。将第一通孔蚀刻到电极和有机聚合物层中，并且将电介质材料施加到堆叠上以至少填充在第一通孔中。然后将第二通道蚀刻到电介质材料中，以暴露并使电极层可用作顶部电极。然后在电介质材料上形成字线，使得顶部电极通过第二通孔连接到字线。根据所公开的方法形成的存储器件包括形成在有机聚合物层上的顶部电极，有机聚合物层下面的导电层，由电介质材料限定并位于顶部电极之上的通孔，以及形成在上部电极上的字线电介质材料，使得顶部电极通过通孔连接到字线。

3. 发明授权

US06852586B1 Self assembly of conducting polymer for formation of polymer memory cell 有权
标题翻译：用于形成聚合物记忆体的导电聚合物的自组装
公开(公告)号：US06852586B1
公开(公告)日：2005-02-08
申请号：US10677042
申请日：2003-10-01
申请人： Matthew S. Buynoski , Suzette K. Pangrle , Uzodinma Okoroanyanwu , Nicholas H. Tripsas
发明人： Matthew S. Buynoski , Suzette K. Pangrle , Uzodinma Okoroanyanwu , Nicholas H. Tripsas
IPC分类号： G11C13/02 , H01L27/28 , H01L51/40 , H01L21/8234
CPC分类号： G11C13/0069 , B82Y10/00 , G11C13/0009 , G11C13/0014 , G11C13/0016 , G11C2013/009 , G11C2213/56 , G11C2213/71 , H01L27/28 , H01L51/0012
摘要： The present invention provides a selectively conductive organic semiconductor (e.g., polymer) device that can be utilized as a memory cell. A polymer solution including a conducting polymer self assembles relative to a conductive electrode. The process affords self-assembly such that a shortest conductive path can be achieved. The method includes depositing a concentrated solution of conducting polymer on a conductive surface, applying heat and optionally a vacuum, and permitting the conducting polymer to self-assemble into an organic semiconductor. The organic semiconductor can be employed within single and multi-cell memory devices by forming a structure with two or more electrodes while employing the organic semiconductor along with a passive device between the electrodes. A partitioning component can be integrated with the memory device to facilitate programming and stacking of additional memory cells on top of or in association with previously formed cells.
摘要翻译：本发明提供可用作存储单元的选择性导电的有机半导体（例如，聚合物）器件。包括导电聚合物的聚合物溶液相对于导电电极自组装。该过程提供自组装，使得可以实现最短的导电路径。该方法包括将导电聚合物的浓缩溶液沉积在导电表面上，施加热量和任选的真空，并允许导电聚合物自组装成有机半导体。有机半导体可以在单电池和多电池存储器件中使用，通过形成具有两个或多个电极的结构，同时在电极之间使用有机半导体以及无源器件。分区组件可以与存储器件集成，以便于在先前形成的单元之上或与之前相关联的附加存储器单元的编程和堆叠。

4. 发明授权

US08044387B1 Semiconductor device built on plastic substrate 有权
标题翻译：半导体器件内置塑料基板
公开(公告)号：US08044387B1
公开(公告)日：2011-10-25
申请号：US10885959
申请日：2004-07-07
申请人： Matthew S. Buynoski , Uzodinma Okoroanyanwu , Suzette K. Pangrle , Nicholas H. Tripsas
发明人： Matthew S. Buynoski , Uzodinma Okoroanyanwu , Suzette K. Pangrle , Nicholas H. Tripsas
IPC分类号： H01L35/24
CPC分类号： H01L51/0591 , G11C13/0016 , G11C2213/71 , H01L27/285 , H01L51/0097
摘要： Disclosed are semiconductor memory devices containing a plastic substrate and at least one active device supported by the plastic substrate, the active device containing an organic semiconductor material. The semiconductor memory devices containing a plastic substrate may further contain a polymer dielectric and/or a conductive polymer.
摘要翻译：公开了包含塑料基板和由塑料基板支撑的至少一个有源器件的半导体存储器件，该有源器件含有有机半导体材料。包含塑料基板的半导体存储器件还可以包含聚合物电介质和/或导电聚合物。

5. 发明授权

US06977389B2 Planar polymer memory device 有权
标题翻译：平面聚合物记忆装置
公开(公告)号：US06977389B2
公开(公告)日：2005-12-20
申请号：US10452877
申请日：2003-06-02
申请人： Nicholas H. Tripsas , Matthew S. Buynoski , Uzodinma Okoroanyanwu , Suzette K. Pangrle
发明人： Nicholas H. Tripsas , Matthew S. Buynoski , Uzodinma Okoroanyanwu , Suzette K. Pangrle
IPC分类号： G11C11/56 , G11C13/02 , H01L27/115 , H01L27/24 , H01L27/28 , H01L35/24
CPC分类号： G11C13/0014 , B82Y10/00 , G11C11/5664 , G11C13/0016 , H01L27/28 , H01L51/0575
摘要： The present invention provides a planar polymer memory device that can operate as a non-volatile memory device. A planar polymer memory device can be formed with two or more electrodes and an electrode extension associated with one electrode, wherein a selectively conductive medium and dielectric separate the electrodes. The method for forming a planar polymer memory device comprises at least one of forming a first electrode with an associated plug, forming a second electrode, forming a passive layer over the extension, depositing an organic polymer and patterning the organic polymer. The method affords integration of a planar polymer memory device into a semiconductor fabrication process. A thin film diode (TFD) can further be employed with a planar polymer memory device to facilitate programming. The TFD can be formed between the first electrode and the selectively conductive medium or the second electrode and the selectively conductive medium.
摘要翻译：本发明提供一种能够作为非易失性存储器件操作的平面聚合物存储器件。平面聚合物存储器件可以形成有两个或更多个电极和与一个电极相关联的电极延伸，其中选择性导电的介质和电介质分离电极。用于形成平面聚合物记忆装置的方法包括以下步骤中的至少一种：形成具有相关塞子的第一电极，形成第二电极，在延伸部分上形成钝化层，沉积有机聚合物和图案化有机聚合物。该方法将平面聚合物存储器件集成到半导体制造工艺中。还可以使用薄膜二极管（TFD）与平面聚合物存储器件来促进编程。可以在第一电极和选择性导电介质或第二电极和选择性导电介质之间形成TFD。

6. 发明授权

US08012673B1 Processing a copolymer to form a polymer memory cell 有权
标题翻译：加工共聚物以形成聚合物记忆体
公开(公告)号：US08012673B1
公开(公告)日：2011-09-06
申请号：US11068674
申请日：2005-03-01
申请人： Suzette K. Pangrle , Matthew S. Buynoski , Nicholas H. Tripsas , Uzodinma Okoroanyanwu
发明人： Suzette K. Pangrle , Matthew S. Buynoski , Nicholas H. Tripsas , Uzodinma Okoroanyanwu
IPC分类号： H01L21/02
CPC分类号： H01L27/285 , H01L51/0035 , H01L51/004
摘要： Disclosed are organic semiconductor devices containing a copolymer layer that contains a polymer dielectric and a semiconducting polymer formed using actinic radiation. As initially formed, the copolymer layer has dielectric properties, but portions may selectively rendered conductive after those portions are exposed to actinic radiation. Also disclosed are methods of making the organic semiconductor devices. Such devices are characterized by light weight and robust reliability.
摘要翻译：公开了包含含有聚合物电介质和使用光化辐射形成的半导体聚合物的共聚物层的有机半导体器件。如最初形成的那样，共聚物层具有介电性质，但是在这些部分暴露于光化辐射之后，部分可以选择性地导电。还公开了制造有机半导体器件的方法。这样的装置的特征在于重量轻和鲁棒的可靠性。

7. 发明授权

US06870183B2 Stacked organic memory devices and methods of operating and fabricating 有权
标题翻译：堆叠有机存储器件及其操作和制造方法
公开(公告)号：US06870183B2
公开(公告)日：2005-03-22
申请号：US10287612
申请日：2002-11-04
申请人： Nicholas H. Tripsas , Uzodinma Okoroanyanwu , Suzette K. Pangrle , Michael A. VanBuskirk
发明人： Nicholas H. Tripsas , Uzodinma Okoroanyanwu , Suzette K. Pangrle , Michael A. VanBuskirk
IPC分类号： G11C11/56 , G11C13/02 , H01L27/28 , H01L51/00 , H01L51/30 , H01L51/20 , H01L51/40
CPC分类号： G11C13/0014 , B82Y10/00 , G11C11/5664 , G11C13/0016 , H01L27/28 , H01L51/0035 , H01L51/0036 , H01L51/0038 , H01L51/0041 , H01L51/0077 , H01L51/0078
摘要： The present invention provides a multi-layer organic memory device that can operate as a non-volatile memory device having a plurality of stacked and/or parallel memory structures constructed therein. A multi-cell and multi-layer organic memory component can be formed with two or more electrodes having a selectively conductive media between the electrodes forming individual cells, while utilizing a partitioning component to enable stacking of additional memory cells on top of or in association with previously formed cells. Memory stacks can be formed by adding additional layers—respective layers separated by additional partitioning components, wherein multiple stacks can be formed in parallel to provide a high-density memory device.
摘要翻译：本发明提供一种多层有机存储器件，其可以作为其中构造有多个堆叠和/或并行存储器结构的非易失性存储器件来操作。可以在两个或多个电极之间形成多单元和多层有机存储器组件，所述两个或更多个电极在形成各个单元的电极之间具有选择性导电介质，同时利用分隔组件使得能够堆叠额外的存储器单元，以前形成的细胞。可以通过添加额外的层 - 通过附加分隔部件分开的相应层来形成存储器堆叠，其中可以并行形成多个堆叠以提供高密度存储器件。

8. 发明授权

US07465956B1 Stacked organic memory devices and methods of operating and fabricating 有权
标题翻译：堆叠有机存储器件及其操作和制造方法
公开(公告)号：US07465956B1
公开(公告)日：2008-12-16
申请号：US11251999
申请日：2005-10-17
申请人： Nicholas H. Tripsas , Uzodinma Okoroanyanwu , Suzette K. Pangrle , Michael A. VanBuskirk
发明人： Nicholas H. Tripsas , Uzodinma Okoroanyanwu , Suzette K. Pangrle , Michael A. VanBuskirk
IPC分类号： H01L51/00
CPC分类号： G11C13/0014 , B82Y10/00 , G11C11/5664 , G11C13/0016 , H01L27/28 , H01L51/0035 , H01L51/0036 , H01L51/0038 , H01L51/0041 , H01L51/0077 , H01L51/0078
摘要： The present invention provides a multi-layer organic memory device that can operate as a non-volatile memory device having a plurality of stacked and/or parallel memory structures constructed therein. A multi-cell and multi-layer organic memory component can be formed with two or more electrodes having a selectively conductive media between the electrodes forming individual cells, while utilizing a partitioning component to enable stacking of additional memory cells on top of or in association with previously formed cells. Memory stacks can be formed by adding additional layers—respective layers separated by additional partitioning components, wherein multiple stacks can be formed in parallel to provide a high-density memory device.
摘要翻译：本发明提供一种多层有机存储器件，其可以作为其中构造有多个堆叠和/或并行存储器结构的非易失性存储器件来操作。可以在两个或多个电极之间形成多单元和多层有机存储器组件，所述两个或更多个电极在形成各个单元的电极之间具有选择性导电介质，同时利用分隔组件使得能够堆叠额外的存储器单元，以前形成的细胞。可以通过添加额外的层 - 通过附加分隔部件分开的相应层来形成存储器堆叠，其中可以并行形成多个堆叠以提供高密度存储器件。

9. 发明授权

US06979837B2 Stacked organic memory devices and methods of operating and fabricating 有权
公开(公告)号：US06979837B2
公开(公告)日：2005-12-27
申请号：US10848679
申请日：2004-05-19
申请人： Nicholas H. Tripsas , Uzodinma Okoroanyanwu , Suzette K. Pangrle , Michael A. VanBuskirk
发明人： Nicholas H. Tripsas , Uzodinma Okoroanyanwu , Suzette K. Pangrle , Michael A. VanBuskirk
IPC分类号： G11C11/56 , G11C13/02 , H01L27/28 , H01L51/00 , H01L51/30
CPC分类号： G11C13/0014 , B82Y10/00 , G11C11/5664 , G11C13/0016 , H01L27/28 , H01L51/0035 , H01L51/0036 , H01L51/0038 , H01L51/0041 , H01L51/0077 , H01L51/0078
摘要： The present invention provides a multi-layer organic memory device that can operate as a non-volatile memory device having a plurality of stacked and/or parallel memory structures constructed therein. A multi-cell and multi-layer organic memory component can be formed with two or more electrodes having a selectively conductive media between the electrodes forming individual cells, while utilizing a partitioning component to enable stacking of additional memory cells on top of or in association with previously formed cells. Memory stacks can be formed by adding additional layers—respective layers separated by additional partitioning components, wherein multiple stacks can be formed in parallel to provide a high-density memory device.

10. 发明授权

US08003436B2 Stacked organic memory devices and methods of operating and fabricating 有权
标题翻译：堆叠有机存储器件及其操作和制造方法
公开(公告)号：US08003436B2
公开(公告)日：2011-08-23
申请号：US12327040
申请日：2008-12-03
申请人： Nicholas H. Tripsas , Uzodinma Okoroanyanwu , Suzette K. Pangrle , Michael A. VanBuskirk
发明人： Nicholas H. Tripsas , Uzodinma Okoroanyanwu , Suzette K. Pangrle , Michael A. VanBuskirk
IPC分类号： H01L51/00
CPC分类号： G11C13/0014 , B82Y10/00 , G11C11/5664 , G11C13/0016 , H01L27/28 , H01L51/0035 , H01L51/0036 , H01L51/0038 , H01L51/0041 , H01L51/0077 , H01L51/0078
摘要： The present invention provides a multi-layer organic memory device that can operate as a non-volatile memory device having a plurality of stacked and/or parallel memory structures constructed therein. A multi-cell and multi-layer organic memory component can be formed with two or more electrodes having a selectively conductive media between the electrodes forming individual cells, while utilizing a partitioning component to enable stacking of additional memory cells on top of or in association with previously formed cells. Memory stacks can be formed by adding additional layers—respective layers separated by additional partitioning components, wherein multiple stacks can be formed in parallel to provide a high-density memory device.
摘要翻译：本发明提供一种多层有机存储器件，其可以作为其中构造有多个堆叠和/或并行存储器结构的非易失性存储器件来操作。可以在两个或多个电极之间形成多单元和多层有机存储器组件，所述两个或更多个电极在形成各个单元的电极之间具有选择性导电介质，同时利用分隔组件使得能够堆叠额外的存储器单元，以前形成的细胞。可以通过添加额外的层 - 通过附加分隔部件分开的相应层来形成存储器堆叠，其中可以并行形成多个堆叠以提供高密度存储器件。

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