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    • 4. 发明授权
    • Planar polymer memory device
    • 平面聚合物记忆装置
    • US06977389B2
    • 2005-12-20
    • US10452877
    • 2003-06-02
    • Nicholas H. TripsasMatthew S. BuynoskiUzodinma OkoroanyanwuSuzette K. Pangrle
    • Nicholas H. TripsasMatthew S. BuynoskiUzodinma OkoroanyanwuSuzette K. Pangrle
    • G11C11/56G11C13/02H01L27/115H01L27/24H01L27/28H01L35/24
    • G11C13/0014B82Y10/00G11C11/5664G11C13/0016H01L27/28H01L51/0575
    • The present invention provides a planar polymer memory device that can operate as a non-volatile memory device. A planar polymer memory device can be formed with two or more electrodes and an electrode extension associated with one electrode, wherein a selectively conductive medium and dielectric separate the electrodes. The method for forming a planar polymer memory device comprises at least one of forming a first electrode with an associated plug, forming a second electrode, forming a passive layer over the extension, depositing an organic polymer and patterning the organic polymer. The method affords integration of a planar polymer memory device into a semiconductor fabrication process. A thin film diode (TFD) can further be employed with a planar polymer memory device to facilitate programming. The TFD can be formed between the first electrode and the selectively conductive medium or the second electrode and the selectively conductive medium.
    • 本发明提供一种能够作为非易失性存储器件操作的平面聚合物存储器件。 平面聚合物存储器件可以形成有两个或更多个电极和与一个电极相关联的电极延伸,其中选择性导电的介质和电介质分离电极。 用于形成平面聚合物记忆装置的方法包括以下步骤中的至少一种:形成具有相关塞子的第一电极,形成第二电极,在延伸部分上形成钝化层,沉积有机聚合物和图案化有机聚合物。 该方法将平面聚合物存储器件集成到半导体制造工艺中。 还可以使用薄膜二极管(TFD)与平面聚合物存储器件来促进编程。 可以在第一电极和选择性导电介质或第二电极和选择性导电介质之间形成TFD。