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1. 发明授权

US06734036B2 Semiconductor device and method of fabrication 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US06734036B2
公开(公告)日：2004-05-11
申请号：US10156429
申请日：2002-05-28
申请人： Utpal Kumar Chakrabarti , Bora M Onat , Kevin Cyrus Robinson , Biswanath Roy , Ping Wu
发明人： Utpal Kumar Chakrabarti , Bora M Onat , Kevin Cyrus Robinson , Biswanath Roy , Ping Wu
IPC分类号： H01L2100
CPC分类号： H01L31/022408 , H01L2924/0002 , H01L2924/00
摘要： The invention is a semiconductor device and method of fabricating the device. The device includes a semiconductor substrate with an active region, and a low dielectric constant insulating layer formed over the substrate. An additional insulating layer is formed over the low dielectric constant layer by a low temperature deposition, such as ion beam assistance deposition. A metal layer can then be formed over the additional layer using lift-off techniques. The metal layer can be patterned to form a bond pad which may be displaced from the area over the active region. Wire bonds can be made on the bond pad using ultrasonic energy.
摘要翻译：本发明是一种制造该器件的半导体器件和方法。该器件包括具有有源区的半导体衬底和形成在衬底上的低介电常数绝缘层。通过低温沉积（例如离子束辅助沉积）在低介电常数层上形成另外的绝缘层。然后可以使用剥离技术在附加层上形成金属层。金属层可以被图案化以形成可以从有源区域上的区域移位的接合焊盘。可以使用超声波能量在接合焊盘上进行引线键合。

2. 发明授权

US06437425B1 Semiconductor devices which utilize low K dielectrics 有权
标题翻译：利用低K电介质的半导体器件
公开(公告)号：US06437425B1
公开(公告)日：2002-08-20
申请号：US09487400
申请日：2000-01-18
申请人： Utpal Kumar Chakrabarti , Bora M Onat , Kevin Cyrus Robinson , Biswanath Roy , Ping Wu
发明人： Utpal Kumar Chakrabarti , Bora M Onat , Kevin Cyrus Robinson , Biswanath Roy , Ping Wu
IPC分类号： H01L2358
CPC分类号： H01L31/022408 , H01L2924/0002 , H01L2924/00
摘要： The invention is a semiconductor device and method of fabricating the device. The device includes a semiconductor substrate with an active region, and a low dielectric constant insulating layer formed over the substrate. An additional insulating layer is formed over the low dielectric constant layer by a low temperature deposition, such as ion beam assistance deposition. A metal layer can then be formed over the additional layer using lift-off techniques. The metal layer can be patterned to form a bond pad which may be displaced from the area over the active region. Wire bonds can be made on the bond pad using ultrasonic energy.
摘要翻译：本发明是一种制造该器件的半导体器件和方法。该器件包括具有有源区的半导体衬底和形成在衬底上的低介电常数绝缘层。通过低温沉积（例如离子束辅助沉积）在低介电常数层上形成另外的绝缘层。然后可以使用剥离技术在附加层上形成金属层。金属层可以被图案化以形成可以从有源区域上的区域移位的接合焊盘。可以使用超声波能量在接合焊盘上进行引线键合。

3. 发明授权

US5802091A Tantalum-aluminum oxide coatings for semiconductor devices 失效
标题翻译：用于半导体器件的钽 - 氧化铝涂层
公开(公告)号：US5802091A
公开(公告)日：1998-09-01
申请号：US758630
申请日：1996-11-27
申请人： Utpal Kumar Chakrabarti , William Henry Grodkiewicz , Ping Wu
发明人： Utpal Kumar Chakrabarti , William Henry Grodkiewicz , Ping Wu
IPC分类号： G02B1/11 , H01L33/00 , H01S5/00 , H01S5/022 , H01S5/028 , H01S3/19
CPC分类号： H01S5/0282 , H01S5/02228 , H01S5/0287
摘要： An active semiconductor device includes a coating comprising an oxide of tantalum and aluminum. The coating may function as an AR coating or as a passivation coating. Applications to ICs and optical devices are described.
摘要翻译：有源半导体器件包括包含钽和铝的氧化物的涂层。该涂层可用作AR涂层或钝化涂层。对IC和光学器件的应用进行了描述。

4. 发明授权

US06489659B2 Non-hermetic APD 有权
公开(公告)号：US06489659B2
公开(公告)日：2002-12-03
申请号：US09557015
申请日：2000-04-20
申请人： Utpal Kumar Chakrabarti , Robert Benedict Comizzoli , John William Osenbach , Christopher Theis
发明人： Utpal Kumar Chakrabarti , Robert Benedict Comizzoli , John William Osenbach , Christopher Theis
IPC分类号： H01L3106
CPC分类号： H01L31/1075 , H01L31/02161
摘要： A non-hermetic APD for operation in a moisture-containing ambient comprises an InP/InGaAsP-containing Group III-V compound semiconductor body and a p-n junction formed in the body. Typically the junction intersects a top surface of the body. A patterned dielectric layer is formed on the surface so as to cover at least those regions of the surface that are intersected by the junction. An electrode is formed in an opening in the dielectric layer so as to make electrical contact with one side of the junction. Importantly, the thickness of the dielectric layer is sufficient to reduce the leakage current through it to less than about 1 nA when the operating voltage is in the range of about 20-100 V. In accordance with a preferred embodiment, the thickness of the dielectric layer is greater than about 2 &mgr;m when the applied voltage is in excess of about 20 V. Moreover, the composition of dielectric layer may be either inorganic (e.g., a silicon nitride) or a combination of inorganic and organic materials.

5. 发明授权

US6098862A Incrementally continuous laser cleaving process 失效
标题翻译：增量连续激光切割过程
公开(公告)号：US6098862A
公开(公告)日：2000-08-08
申请号：US80663
申请日：1998-05-18
申请人： Utpal Kumar Chakrabarti , David Reese Peale
发明人： Utpal Kumar Chakrabarti , David Reese Peale
IPC分类号： B28D5/00 , B65H20/00
CPC分类号： B28D5/0011 , B28D5/0023 , B28D5/0082 , Y10T225/304 , Y10T225/307 , Y10T225/325
摘要： An incrementally continuous cleaving system allows for sequential flow of "material-to-be-cleaved" through a cleaving apparatus. In particular, a continuous feed tape membrane is used to support sequentially loaded optical bars (or, perhaps, wafers) that are then transported into a cleaving apparatus. The tape is advanced in small increments so that individual cleaving operations are performed at each scribe mark location on the top surface of the optical material. A vacuum pen (assisted by a detach pin) is then used to remove the cleaved section from the cleaving system. A conventional pick-and-place device may be used in the first instance to continuously load the bars (or wafers) onto the tape membrane.
摘要翻译：逐渐连续的切割系统允许通过切割装置顺序地流动“被切割的材料”。特别地，使用连续进料带膜来支撑顺序加载的光学棒（或可能的晶片），然后将其传送到切割装置中。胶带以小增量推进，使得在光学材料的顶表面上的每个划线标记位置执行单独的切割操作。然后使用真空笔（由分离针辅助）从切割系统中去除切割的部分。首先可以使用传统的拾取和放置装置来将条（或晶片）连续地加载到带膜上。

6. 发明授权

US5719077A Fixture and method for laser fabrication by in-situ cleaving of semiconductor bars 失效
标题翻译：通过半导体棒的原位切割激光制造的夹具和方法
公开(公告)号：US5719077A
公开(公告)日：1998-02-17
申请号：US549897
申请日：1995-10-30
申请人： Utpal Kumar Chakrabarti , Judith Francavilla de Jong , Erdmann Frederick Schubert , James Dennis Wynn , George John Zydzik
发明人： Utpal Kumar Chakrabarti , Judith Francavilla de Jong , Erdmann Frederick Schubert , James Dennis Wynn , George John Zydzik
IPC分类号： B28D5/00 , H01L21/301 , H01L21/304 , H01S5/00 , H01S5/02 , H01S5/40 , H01L21/203
CPC分类号： H01L21/3043 , B28D5/0017 , H01S5/0201 , H01S5/0202 , H01S5/4025 , Y10T225/357
摘要： The invention is an apparatus and method for cleaving a semiconductor bar and coating the cleaved facets within a vacuum environment. The apparatus is a fixture having at least one rotator for cleaving one or more semiconductor samples into semiconductor bars and positioning the semiconductor bars for immediate coating of their cleaved facets. The fixture is operably positioned within a processing chamber and exposed to a conventional coating medium before, during or immediately after cleaving the semiconductor sample. The fixture cleaves the semiconductor samples in a manner that reduces semiconductor sample waste and also allows the processing environment requirements to be reduced compared to other cleaving and coating techniques. A single actuation feed-through mechanism actuates the fixture from outside of the processing chamber.
摘要翻译：本发明是用于切割半导体棒并在真空环境中涂覆切割面的装置和方法。该装置是具有至少一个旋转器的固定装置，用于将一个或多个半导体样品切割成半导体棒，并且定位半导体棒以立即涂覆其切割面。夹具可操作地定位在处理室内，并在切割半导体样品之前，期间或之后暴露于常规涂覆介质。固定装置以减少半导体样品废物的方式切割半导体样品，并且与其他切割和涂覆技术相比，可以减少处理环境要求。单个致动馈通机构从处理室的外部致动固定装置。

7. 发明授权

US06556605B1 Method and device for preventing zinc/iron interaction in a semiconductor laser 有权
标题翻译：用于防止半导体激光器中锌/铁相互作用的方法和装置
公开(公告)号：US06556605B1
公开(公告)日：2003-04-29
申请号：US09515102
申请日：2000-02-29
申请人： Gleb E. Shtengel , Utpal Kumar Chakrabarti , Charles William Lentz , Charles H. Joyner , Abdallah Ougazzaden
发明人： Gleb E. Shtengel , Utpal Kumar Chakrabarti , Charles William Lentz , Charles H. Joyner , Abdallah Ougazzaden
IPC分类号： H01S500
CPC分类号： H01S5/227 , H01S5/2206 , H01S5/2224 , H01S5/2275 , H01S5/3072
摘要： A mesa stripe buried heterostructure semiconductor laser with no intediffusion of atoms between doped regions and a method of its formation are disclosed. A double dielectric mask is used to form the mesa stripe. The first mask is then partially etched and a Si-doped InP layer is selectively grown. The first and second mask are subsequently etched away and an InP(Zn) clad layer, along with a Zn-doped InGaAs contact layer, are formed. This way, the resulting structure has no contact between the InP(Zn) clad layer and the InP(Fe) layer, and the dopant atoms interdiffusion is suppressed.
摘要翻译：公开了在掺杂区域之间没有原子扩散的台面条状掩埋异质结构半导体激光器及其形成方法。使用双电介质掩模形成台面条纹。然后部分蚀刻第一掩模，并且选择性地生长Si掺杂的InP层。随后蚀刻第一和第二掩模，并形成InP（Zn）覆盖层以及Zn掺杂的InGaAs接触层。这样，所得结构在InP（Zn）包覆层和InP（Fe）层之间没有接触，并且抑制了掺杂剂原子相互扩散。

8. 发明授权

US06386533B1 Laser processing fixture 失效
标题翻译：激光加工夹具
公开(公告)号：US06386533B1
公开(公告)日：2002-05-14
申请号：US09071499
申请日：1998-05-01
申请人： Utpal Kumar Chakrabarti , David Reese Peale
发明人： Utpal Kumar Chakrabarti , David Reese Peale
IPC分类号： B25B120
CPC分类号： B25B5/06
摘要： A laser processing fixture is formed to allow for facet processing of cleaved laser bars, either individually, or allowing for multiple bars to be processed simultaneously. The fixture holds the bars at a precisely-controlled distance with respect to a predefined reference plane, and holds the bars rigidly enough so as to minimize the possibility of vibration, but not so forcefully as to cause damage. The fixture comprises a fixed jaw and a movable jaw, with a pair of spaced-apart support members extending between the jaws. One or more laser bars may then be positioned between the jaws such that the front and rear facets will be exposed above and below the jaws. Therefore, each facet may be processed without unloading and re-loading the bars in the fixture. The support members, which may comprise a pair of wires, are spaced a sufficient distance so as to be disposed beyond the location of any active device region. In an arrangement for processing multiple bars, the support members may be formed as rails (with or without vacuum pull-down slots) and spacer elements may be interposed between adjacent bars to prevent facet coatings from bridging between adjacent laser bars.
摘要翻译：形成激光加工夹具以允许单独地切割激光棒的面处理，或允许同时处理多个条。夹具将杆保持在相对于预定义的参考平面的精确控制的距离处，并且将杆牢固地保持足够，以便使振动的可能性最小化，但是不会如此有力地造成损坏。夹具包括固定夹爪和可移动夹爪，其中一对间隔开的支撑构件在夹爪之间延伸。然后可以将一个或多个激光棒定位在夹爪之间，使得前和后面将暴露在钳口的上方和下方。因此，可以在不卸载和重新装载固定装置中的杆的情况下处理每个小面。可以包括一对导线的支撑构件间隔开足够的距离，以便设置在任何有源装置区域的位置之外。在用于处理多个杆的布置中，支撑构件可以形成为轨道（具有或不具有真空下拉槽），并且间隔元件可以插入在相邻的杆之间以防止小面涂层在相邻的激光棒之间桥接。

9. 发明授权

US06744796B1 Passivated optical device and method of forming the same 有权
标题翻译：钝化光学器件及其形成方法
公开(公告)号：US06744796B1
公开(公告)日：2004-06-01
申请号：US09538446
申请日：2000-03-30
申请人： Utpal Kumar Chakrabarti
发明人： Utpal Kumar Chakrabarti
IPC分类号： H01S500
CPC分类号： H01S5/028 , H01L33/44 , H01S5/0281 , H01S5/0282
摘要： A semiconductor optical device structure includes passivated facets formed by first removing the native oxide contaminant with a “non-reactive” molecular gas etchant, such as XeF2. As the oxide is removed, a passivation flux is introduced into the vacuum chamber so as to begin the process of forming a passivation layer to cover the exposed facet surface. The gas etchant is slowly turned off and the flux is increased so as to form a passivation layer of the desired thickness on the “cleaned” facet surface. A protective film is then be evaporated to cover the passivation layer.
摘要翻译：半导体光学器件结构包括通过首先用“非反应性”分子气体蚀刻剂例如XeF 2除去天然氧化物污染物形成的钝化小面。当去除氧化物时，将钝化助熔剂引入真空室中，以开始形成钝化层以覆盖曝光的小面表面的工艺。缓慢地关闭气体蚀刻剂，并且增加通量，以便在“清洁的”小面上形成所需厚度的钝化层。然后将保护膜蒸发以覆盖钝化层。

10. 发明授权

US06247625B1 Anvil pad configuration for laser cleaving 失效
标题翻译：砧座配置用于激光切割
公开(公告)号：US06247625B1
公开(公告)日：2001-06-19
申请号：US09080648
申请日：1998-05-18
申请人： Utpal Kumar Chakrabarti , David Reese Peale
发明人： Utpal Kumar Chakrabarti , David Reese Peale
IPC分类号： B26F300
CPC分类号： B28D5/0041 , B28D5/0011 , B28D5/0023 , Y10T225/325 , Y10T225/371 , Y10T225/379 , Y10T225/386
摘要： An improved anvil tool for use in laser bar or wafer cleaving comprises a relatively small cross section such that the anvil does not overhang the device edges in any direction. In one embodiment, the surface of the tool contacting the laser wafer or bar is compliant and contains a laterally disposed slit that aligns with the scribe mark on the top surface of the material to be cleaved. The anvil may be formed as a columnar tool or as a film deposited on a substrate. The compliant surface may be removable and in a preferred embodiment may comprise a continuous feed membrane tape so that a “clean” surface is used for each subsequent cleave operation.
摘要翻译：用于激光棒或晶片切割的改进的砧座工具包括相对小的横截面，使得砧座不会在任何方向上突出设备边缘。在一个实施例中，接触激光晶片或棒的工具的表面是柔性的，并且包含横向设置的狭缝，其与待劈裂材料的顶表面上的划线标记对准。砧座可以形成为柱状工具或沉积在基底上的膜。顺应性表面可以是可移除的，并且在优选实施例中可以包括连续进料膜带，使得“干净”表面用于每次随后的切割操作。

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