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    • 3. 发明申请
    • WORM MEMORY USING NANOPARTICLES CONTAINED IN A POLYMER THIN FILM
    • 使用聚合物薄膜中含有纳米粒子的WORM记忆
    • WO2009154386A2
    • 2009-12-23
    • PCT/KR2009003207
    • 2009-06-16
    • UNIV SOGANG IND UNIV COOP FOUNKIM TAE-WHANHAM JUNG-HOONJUNG JAE-HOONKIM SANG-WOOK
    • KIM TAE-WHANHAM JUNG-HOONJUNG JAE-HOONKIM SANG-WOOK
    • H01L21/8246
    • H01L27/10B82Y10/00H01L27/285
    • Disclosed is a WORM memory using nanoparticles contained in a polymer thin film. The WORM memory according to the present invention includes a substrate, and a lower electrode which is formed on the substrate, and consists of conductive materials. The WORM memory further includes a memory layer which is formed on the lower electrode, and has nanoparticles distributed in polymer materials, and an upper electrode which is formed on the memory layer, and consists of conductive materials. The WORM memory according to the present invention employs an insulating polymer and inorganic nanoparticles which are chemically stable, thus significantly improving resistances against an external environmental condition such as heat, light, etc. as compared to a WORM memory which employs organic matter, and maximally suppressing a memory time from being shortened due to the degradation of the characteristics of organic matter.
    • 公开了使用包含在聚合物薄膜中的纳米颗粒的WORM记忆。 根据本发明的WORM存储器包括衬底和形成在衬底上的下电极,并由导电材料组成。 WORM存储器还包括形成在下电极上并具有分散在聚合物材料中的纳米颗粒的存储层,以及形成在存储层上的由导电材料组成的上电极。 根据本发明的WORM存储器采用化学稳定的绝缘聚合物和无机纳米颗粒,因此与使用有机物质的WORM存储器相比,显着提高了耐热,光等外部环境条件的电阻,并且最大程度地 抑制由于有机物的特性的劣化而引起的记忆时间的缩短。