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    • 7. 发明申请
    • CONTROLLED GROWTH OF LARGER HETEROJUNCTION INTERFACE AREA FOR ORGANIC PHOTOSENSITIVE DEVICES
    • 有机光敏器件大尺寸异质结界面的控制生长
    • WO2008097258A3
    • 2008-10-02
    • PCT/US2007015809
    • 2007-07-10
    • UNIV PRINCETONUNIV MICHIGANYANG FANFORREST STEPHEN R
    • YANG FANFORREST STEPHEN R
    • H01L51/42H01L51/00
    • H01L51/4246H01L51/0008H01L51/4253Y02E10/549Y02P70/521
    • An optoelectronic device and a method of fabricating a photosensitive optoelectronic device includes depositing a first organic semiconductor material on a first electrode to form a continuous first layer having protrusions, a side of the first layer opposite the first electrode having a surface area at least three times greater than an underlying lateral cross-sectional area; depositing a second organic semiconductor material directly on the first layer to form a discontinuous second layer, portions of the first layer remaining exposed; depositing a third organic semiconductor material directly on the second layer to form a discontinuous third layer, portions of at least the second layer remaining exposed; depositing a fourth organic semiconductor material on the third layer to form a continuous fourth layer, filling any exposed gaps and recesses in the first, second, and third layers; and depositing a second electrode on the fourth layer, wherein at least one of the first electrode and the second electrode is transparent, and the first and third organic semiconductor materials are both of a donor-type or an acceptor-type relative to second and fourth organic semiconductor materials, which are of the other material type.
    • 一种光电子器件和制造光敏光电子器件的方法包括在第一电极上沉积第一有机半导体材料以形成具有突起的连续的第一层,第一层的与第一电极相对的一侧具有至少三倍的表面积 大于下面的横向横截面积; 直接在第一层上沉积第二有机半导体材料以形成不连续的第二层,第一层的部分保持暴露; 直接在第二层上沉积第三有机半导体材料以形成不连续的第三层,至少第二层的部分保持暴露; 在第三层上沉积第四有机半导体材料以形成连续的第四层,填充第一,第二和第三层中的任何暴露的间隙和凹陷; 以及在所述第四层上沉积第二电极,其中所述第一电极和所述第二电极中的至少一个是透明的,并且所述第一和第三有机半导体材料相对于第二和第四相对是施主型或受主型 有机半导体材料,这是另一种材料类型。