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1. 发明申请

WO2008027487A3 VERTICAL LIGHT EMITTING TRANSISTOR 审中-公开
标题翻译：垂直发光晶体管
公开(公告)号：WO2008027487A3
公开(公告)日：2008-06-26
申请号：PCT/US2007019093
申请日：2007-08-30
申请人： UNIV CALIFORNIA , YANG YANG , XU ZHENG , LI SHENG-HAN , MA LIPING
发明人： YANG YANG , XU ZHENG , LI SHENG-HAN , MA LIPING
IPC分类号： H01L29/00
CPC分类号： H01L51/52 , H01L51/5088 , H01L51/5092 , H01L51/5203
摘要： An electro-optic device has a first electrode, a second electrode spaced apart from the first electrode, a third electrode disposed between the first electrode and the second electrode, a layer of dielectric material disposed between the second electrode and the third electrode, and a layer of light-emitting material disposed between and in electrical connection with the first electrode and the third electrode. A voltage applied between the second electrode and the third electrode during operation of the electro-optic device provides control of light emission from the light-emitting material.
摘要翻译：电光器件具有第一电极，与第一电极间隔开的第二电极，设置在第一电极和第二电极之间的第三电极，设置在第二电极和第三电极之间的介电材料层，以及发光材料层设置在第一电极和第三电极之间并与第一电极和第三电极电连接。在电光器件操作期间施加在第二电极和第三电极之间的电压提供了对来自发光材料的光发射的控制。

2. 发明申请

WO2007048041A3 AMBIPOLAR VERTICAL ORGANIC FIELD-EFFECT TRANSISTORS 审中-公开
标题翻译： AMBIPOLAR垂直有机场效应晶体管
公开(公告)号：WO2007048041A3
公开(公告)日：2007-12-27
申请号：PCT/US2006041283
申请日：2006-10-23
申请人： UNIV CALIFORNIA , YANG YANG , LI SHENG-HAN , MA LIPING
发明人： YANG YANG , LI SHENG-HAN , MA LIPING
IPC分类号： H01L29/76
CPC分类号： H01L51/0512
摘要： An ambipolar vertical organic field effect transistor has a drain electrode, a gate electrode spaced apart from said drain electrode, a charge injection layer disposed between the drain electrode and the gate electrode, a dielectric layer disposed between the gate electrode and the charge injection layer, and a semiconductor layer disposed between the drain electrode and the charge injection layer. In operation, the charge injection layer balances hole and electron injection barrier heights to provide both N-type and P-type transistor operation modes.
摘要翻译：双极性垂直有机场效应晶体管具有漏电极，与所述漏电极隔开的栅电极，设置在漏电极和栅电极之间的电荷注入层，设置在栅电极和电荷注入层之间的介电层，以及设置在漏电极和电荷注入层之间的半导体层。在操作中，电荷注入层平衡空穴和电子注入势垒高度以提供N型和P型晶体管操作模式。

3. 发明申请

WO2011075728A3 A SIMPLE ROUTE FOR ALKALI METAL INCORPORATION IN SOLUTION-PROCESSED CRYSTALLINE SEMICONDUCTORS 审中-公开
标题翻译：溶液加工晶体半导体中碱金属纳入简单路线
公开(公告)号：WO2011075728A3
公开(公告)日：2011-10-06
申请号：PCT/US2010061323
申请日：2010-12-20
申请人： UNIV CALIFORNIA , YANG YANG , HOU WEI-JEN , LI SHENG-HAN , TUNG CHUN-CHIH
发明人： YANG YANG , HOU WEI-JEN , LI SHENG-HAN , TUNG CHUN-CHIH
IPC分类号： H01L21/205
CPC分类号： H01L21/02551 , H01L21/02568 , H01L21/02628 , H01L31/0322 , H01L31/0725 , H01L31/0749 , H01L31/18 , Y02E10/541
摘要： A precursor solution for producing a semiconductor includes at least one of an alkali metal or an alkali metal compound dissolved in a solvent, and a metal chalcogenide dissolved in the solvent. A method of producing a precursor solution for producing a semiconductor includes preparing a first precursor solution that has at least one of an alkali metal or an alkali metal compound dissolved in a first solvent, preparing a second precursor solution that has a metal chalcogenide dissolved in a second solvent, and combining the first and second precursor solutions to obtain the precursor solution for producing the semiconductor. A method of producing a semiconductor device includes providing a precursor solution for producing a semiconductor layer on a substructure, and forming a layer of the precursor solution on the substructure. The precursor solution includes at least one of an alkali metal or an alkali metal compound dissolved in a solvent, and a metal chalcogenide dissolved in the solvent.
摘要翻译：用于制造半导体的前体溶液包括溶解在溶剂中的碱金属或碱金属化合物和溶解在溶剂中的金属硫属元素化物中的至少一种。生产用于生产半导体的前体溶液的方法包括：制备第一前体溶液，其具有溶解在第一溶剂中的碱金属或碱金属化合物中的至少一种;制备第二前体溶液，其具有溶解在第一溶剂中的金属硫属元素化物第二溶剂，并且合并第一和第二前体溶液以获得用于生产半导体的前体溶液。一种制造半导体器件的方法包括：提供用于在子结构上制造半导体层的前体溶液，以及在该子结构上形成前体溶液层。前体溶液包括溶解在溶剂中的碱金属或碱金属化合物中的至少一种以及溶解在溶剂中的金属硫族化合物。

4. 发明申请

WO2007005618A2 HIGH PERFORMANCE ORGANIC THIN FILM TRANSISTOR 审中-公开
标题翻译：高性能有机薄膜晶体管
公开(公告)号：WO2007005618A2
公开(公告)日：2007-01-11
申请号：PCT/US2006025598
申请日：2006-06-30
申请人： UNIV CALIFORNIA , YANG YANG , CHU CHIH-WEI , LI SHENG-HAN
发明人： YANG YANG , CHU CHIH-WEI , LI SHENG-HAN
IPC分类号： H01L51/00
CPC分类号： H01L51/0525 , H01L21/31604 , H01L51/0052
摘要： An organic thin film transistor has a gate electrode, a gate insulator formed on the gate electrode, a layer of organic semiconducting material formed on the gate insulator, a source electrode formed on the layer of organic semiconducting material, and a drain electrode formed on the layer of organic semiconducting material. The source electrode and/or the drain electrode have a layer of transition-metal oxide formed on the organic semiconducting material and a layer of metal formed on the layer of transition-metal oxide. A method of producing an organic thin film transistor includes providing a gate electrode, forming a gate insulator on the gate electrode, forming a layer of semiconducting material on the gate insulator, forming a source electrode on the layer of organic semiconducting material, and forming a drain electrode on the layer of organic semiconducting material. Forming the source electrode and/or forming the drain electrode include forming a layer of transition-metal oxide on the organic semiconducting material and forming a layer of metal on the layer of transition-metal oxide.
摘要翻译：有机薄膜晶体管具有栅电极，形成在栅电极上的栅极绝缘体，形成在栅极绝缘体上的有机半导体材料层，形成在有机半导体材料层上的源电极和形成在栅极绝缘体上的漏电极有机半导体材料层。源电极和/或漏极具有形成在有机半导体材料上的过渡金属氧化物层和形成在过渡金属氧化物层上的金属层。制造有机薄膜晶体管的方法包括提供栅电极，在栅电极上形成栅极绝缘体，在栅极绝缘体上形成半导体材料层，在有机半导体材料层上形成源电极，并形成有机半导体材料层上的漏电极。形成源电极和/或形成漏极包括在有机半导体材料上形成过渡金属氧化物层并在过渡金属氧化物层上形成金属层。

5. 发明申请

WO2005086627A3 THREE-TERMINAL ELECTRICAL BISTABLE DEVICES 审中-公开
标题翻译：三端电气设备
公开(公告)号：WO2005086627A3
公开(公告)日：2006-03-09
申请号：PCT/US2004040368
申请日：2004-12-01
申请人： UNIV CALIFORNIA , YANG YANG , MA LIPING , HE JUN
发明人： YANG YANG , MA LIPING , HE JUN
IPC分类号： H01L51/00 , H01L51/05 , H01L33/00 , H04N15/00
CPC分类号： H01L51/0504 , B82Y10/00 , G11C13/0009 , G11C13/0014 , G11C13/0016 , G11C2213/15 , G11C2213/55 , H01L51/0036 , H01L51/0039 , H01L51/004 , H01L51/0043 , H01L51/0067 , H01L51/05
摘要： A three terminal electrical bistable device that includes a tri-layer composed of an electrically conductive mixed layer sandwiched between two layers of low conductivity organic material that is interposed between a top electrode and a bottom electrode. The conducting mixed layer serves as the middle electrode. The device includes two memory cells composed of electrode/organic layer/mixed layer, where the interfaces between the electrically conductive mixed layer and the low conductivity organic layer exhibit bistable behavior.
摘要翻译：一种三端电双稳态器件，其包括夹在介于顶电极和底电极之间的两层低电导有机材料之间的导电混合层组成的三层。导电混合层用作中间电极。该装置包括由电极/有机层/混合层组成的两个存储单元，其中导电混合层和低电导率有机层之间的界面呈现双稳态。

6. 发明申请

WO2004070789A3 REWRITABLE NANO-SURFACE ORGANIC ELECTRICAL BISTABLE DEVICES 审中-公开
标题翻译：可靠的纳米表面有机电气设备
公开(公告)号：WO2004070789A3
公开(公告)日：2006-05-11
申请号：PCT/US2004002932
申请日：2004-02-02
申请人： UNIV CALIFORNIA , YANG YANG , MA LIPING
发明人： YANG YANG , MA LIPING
IPC分类号： B05D5/12 , H01L27/28 , H01L29/08 , H01L51/00 , H01L51/30
CPC分类号： H01L27/28 , B82Y10/00 , H01L51/0051 , H01L51/0067 , H01L51/0591 , H01L51/0595
摘要： A bistable electrical device that is convertible between a low resistance state and a high resistance state. The device includes at least one layer of organic low conductivity material that is sandwiched between two electrodes. A buffer layer is located between the organic layer and at least one of the electrodes. The buffer layer includes particles in the form of flakes or dots of a low conducting material or insulating material that are present in a sufficient amount to only partially cover the electrode surface. The presence of the buffer layer controls metal migration into the organic layer when voltage pulses are applied between the electrodes to convert the device back and forth between the low and high resistance states.
摘要翻译：双稳态电气装置，可在低电阻状态和高电阻状态之间转换。该装置包括夹在两个电极之间的至少一层有机低电导率材料。缓冲层位于有机层和至少一个电极之间。缓冲层包括薄片形式的颗粒或低导电材料或绝缘材料的点，其以足够的量存在以仅部分地覆盖电极表面。当在电极之间施加电压脉冲时，缓冲层的存在控制金属迁移到有机层中，以在低电阻状态和高电阻状态之间来回转换器件。

7. 发明申请

WO2005024907A3 VERTICAL ORGANIC FIELD EFFECT TRANSISTOR 审中-公开
标题翻译：垂直有机场效应晶体管
公开(公告)号：WO2005024907A3
公开(公告)日：2005-09-15
申请号：PCT/US2004027579
申请日：2004-08-24
申请人： UNIV CALIFORNIA , YANG YANG , MA LIPING
发明人： YANG YANG , MA LIPING
IPC分类号： H01L20060101 , H01L29/772 , H01L51/00 , H01L51/05
CPC分类号： H01L51/057 , B82Y10/00 , H01L51/0036 , H01L51/0038 , H01L51/0039 , H01L51/0046 , H01L51/0047 , H01L51/0059 , H01L51/0078 , H01L51/0081 , H01L51/0512 , H01L51/055
摘要： A vertical organic field effect transistor that includes an active cell and a capacitor that share a common source electrode. The active cell includes a semiconductor layer that is sandwiched between a drain electrode and the common source electrode. The capacitor includes a dielectric layer that is sandwiched between a gate electrode and the common source electrode. The common source electrode allows control of electrical current between the source and drain electrodes by controlling the electrical potential that is applied to the gate electrode.
摘要翻译：一种垂直有机场效应晶体管，其包括共用公共源电极的有源电池和电容器。活性电池包括夹在漏电极和公共源电极之间的半导体层。电容器包括夹在栅电极和公共源电极之间的电介质层。公共源电极通过控制施加到栅电极的电位来允许控制源极和漏极之间的电流。

8. 发明申请

WO2005089288A3 DRIVER AND DRIVE METHOD FOR ORGANIC BISTABLE ELECTRICAL DEVICE AND ORGANIC LED DISPLAY 审中-公开
标题翻译：有机电气设备和有机LED显示屏的驱动和驱动方法
公开(公告)号：WO2005089288A3
公开(公告)日：2006-10-12
申请号：PCT/US2005008478
申请日：2005-03-15
申请人： FUJI ELECTRIC HOLDINGS , UNVERSITY OF CALIFORNIA , KAWAKAMI HARUO , YANG YANG , MA LIPING
发明人： KAWAKAMI HARUO , YANG YANG , MA LIPING
IPC分类号： H01L51/00 , G09G3/32 , G11C13/02 , H01L51/05 , H05B33/08
CPC分类号： G11C13/0014 , B82Y10/00 , G09G3/2011 , G09G3/2014 , G09G3/3208 , G09G3/3216 , G09G2300/0473 , H01L27/24 , H01L27/3281 , H01L51/0067 , H01L51/0068 , H01L51/0081 , H01L51/0575 , H01L51/0591 , H01L51/0595 , H05B33/0896
摘要： An electroluminescent device based on bistability, and method for its use. The device alternates between a low resistance state and a high resistance state by application of an electrical voltage. A bistable electrical device has two electrodes sandwiching an organic material that produces bistable action. An organic light emitting diode next to the bistable device is emits light when conducting. To achieve graduated light output, circuitry is provided for applying to the bistable device a constant bias voltage intermediate a turnoff voltage and a turn-on voltage, and electrical pulses variable in a temporal pulse width or in an additional voltage, or in both. The additional voltage is superimposed on the bias voltage while the pulse is applied. The current through the bistable device, and therefore the brightness of light emitted by the diode after the pulse has ceased, are controlled by varying the pulse width or the additional voltage.
摘要翻译：基于双稳态的电致发光器件及其使用方法。该装置通过施加电压在低电阻状态和高电阻状态之间交替。双稳电气装置具有夹持产生双稳态作用的有机材料的两个电极。双稳态器件旁边的有机发光二极管在导通时发光。为了实现渐变光输出，提供电路用于向双稳态器件施加恒定的偏置电压，其中间断开电压和导通电压，以及可在时间脉冲宽度或附加电压中或两者中的电脉冲。当施加脉冲时，附加电压叠加在偏置电压上。通过双稳态器件的电流，并且因此在脉冲停止之后由二极管发射的光的亮度通过改变脉冲宽度或附加电压来控制。

9. 发明申请

WO2006033794A3 TRANSISTOR WITH TUNNELING DUST ELECTRODE 审中-公开
标题翻译：带隧道式电极的晶体管
公开(公告)号：WO2006033794A3
公开(公告)日：2006-06-22
申请号：PCT/US2005031043
申请日：2005-09-01
申请人： FUJI TECHNOSURVEY CO LTD , UNIV CALIFORNIA , YANG YANG , HARUO KAWAKAMI
发明人： YANG YANG , HARUO KAWAKAMI
IPC分类号： H01L29/08 , H01L29/74
CPC分类号： H01L51/0504 , H01L51/0055 , H01L51/0508 , H01L51/055
摘要： A transistor-like electronic device operates somewhat as a triode vacuum tube. Two electrodes (20, 21) (source and drain) sandwich an intermediate layer (30, 31) of organic semiconductor material in which fine metallic particles (40) are dispersed. Due to the fineness and number of the particles, they are close enough to each other that electrons can tunnel from one to the next, so that a voltage impressed at the edge (45) of the intermediate layer (30, 31) causes current to flow through the dispersed particles, and causes the entire layer (30, 31) to reach the impressed voltage. By varying the impressed voltage, the voltage of the intermediate layer (30, 31) is caused to vary, which controls conduction between the source and drain (20, 21). By making the particles small, the proportion of open area between the particles remains large so the electrons have room to move around the particles and through the organic material in intermediate layer (30, 31), allowing high currents to flow through the device.
摘要翻译：晶体管状电子器件稍微作为三极管真空管工作。两个电极（20,21）（源极和漏极）夹着分散有金属微粒（40）的有机半导体材料的中间层（30,31）。由于颗粒的细度和数量，它们彼此足够接近，电子可以从一个隧穿到下一个，使得在中间层（30,31）的边缘（45）处施加的电压使电流流过分散的颗粒，并使整个层（30,31）达到外加电压。通过改变外加电压，使得中间层（30,31）的电压发生变化，从而控制源极和漏极（20,21）之间的导通。通过使颗粒变小，颗粒之间的开放面积的比例保持较大，因此电子具有在颗粒周围移动的空间，并通过中间层（30,31）中的有机材料移动，允许高电流流过该装置。

10. 发明申请

WO2004070787A3 METHOD FOR MAKING MULTIFUNCTIONAL ORGANIC THIN FILMS 审中-公开
标题翻译：制备多功能有机薄膜的方法
公开(公告)号：WO2004070787A3
公开(公告)日：2004-11-04
申请号：PCT/US2004002710
申请日：2004-01-29
申请人： UNIV CALIFORNIA , YANG YANG , SHAO YAN
发明人： YANG YANG , SHAO YAN
IPC分类号： B05D5/06 , B05D5/12 , C23C14/12 , H01L20060101 , H01L51/56
CPC分类号： C23C14/12 , B05D1/60 , H01L51/0008 , H01L51/0037 , H01L51/005 , H01L51/0052 , H01L51/0059 , H01L51/0062 , H01L51/0081 , H01L51/5036 , H01L51/56 , Y02E10/549 , Y02P70/521
摘要： A method for use in making electronic and photonic devices wherein said devices include at least one multifunctional organic layer. The method involves first providing a substrate having a surface onto which a multifunctional organic layer is to be deposited. A single evaporation source is provided that includes a mixture of at least two organic compounds. The organic compounds can be matrix materials, and dopants if desired, that are used in making electronic and photonic devices. The single evaporation source is heated for a sufficient time and at a sufficient temperature to provide deposition of the organic compounds onto the surface of the substrate to form the multifunctional organic layer.

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