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1. 发明申请

WO2007048041A3 AMBIPOLAR VERTICAL ORGANIC FIELD-EFFECT TRANSISTORS 审中-公开
标题翻译： AMBIPOLAR垂直有机场效应晶体管
公开(公告)号：WO2007048041A3
公开(公告)日：2007-12-27
申请号：PCT/US2006041283
申请日：2006-10-23
申请人： UNIV CALIFORNIA , YANG YANG , LI SHENG-HAN , MA LIPING
发明人： YANG YANG , LI SHENG-HAN , MA LIPING
IPC分类号： H01L29/76
CPC分类号： H01L51/0512
摘要： An ambipolar vertical organic field effect transistor has a drain electrode, a gate electrode spaced apart from said drain electrode, a charge injection layer disposed between the drain electrode and the gate electrode, a dielectric layer disposed between the gate electrode and the charge injection layer, and a semiconductor layer disposed between the drain electrode and the charge injection layer. In operation, the charge injection layer balances hole and electron injection barrier heights to provide both N-type and P-type transistor operation modes.
摘要翻译：双极性垂直有机场效应晶体管具有漏电极，与所述漏电极隔开的栅电极，设置在漏电极和栅电极之间的电荷注入层，设置在栅电极和电荷注入层之间的介电层，以及设置在漏电极和电荷注入层之间的半导体层。在操作中，电荷注入层平衡空穴和电子注入势垒高度以提供N型和P型晶体管操作模式。

2. 发明申请

WO2008027487A3 VERTICAL LIGHT EMITTING TRANSISTOR 审中-公开
标题翻译：垂直发光晶体管
公开(公告)号：WO2008027487A3
公开(公告)日：2008-06-26
申请号：PCT/US2007019093
申请日：2007-08-30
申请人： UNIV CALIFORNIA , YANG YANG , XU ZHENG , LI SHENG-HAN , MA LIPING
发明人： YANG YANG , XU ZHENG , LI SHENG-HAN , MA LIPING
IPC分类号： H01L29/00
CPC分类号： H01L51/52 , H01L51/5088 , H01L51/5092 , H01L51/5203
摘要： An electro-optic device has a first electrode, a second electrode spaced apart from the first electrode, a third electrode disposed between the first electrode and the second electrode, a layer of dielectric material disposed between the second electrode and the third electrode, and a layer of light-emitting material disposed between and in electrical connection with the first electrode and the third electrode. A voltage applied between the second electrode and the third electrode during operation of the electro-optic device provides control of light emission from the light-emitting material.
摘要翻译：电光器件具有第一电极，与第一电极间隔开的第二电极，设置在第一电极和第二电极之间的第三电极，设置在第二电极和第三电极之间的介电材料层，以及发光材料层设置在第一电极和第三电极之间并与第一电极和第三电极电连接。在电光器件操作期间施加在第二电极和第三电极之间的电压提供了对来自发光材料的光发射的控制。

3. 发明申请

WO2007005618A2 HIGH PERFORMANCE ORGANIC THIN FILM TRANSISTOR 审中-公开
标题翻译：高性能有机薄膜晶体管
公开(公告)号：WO2007005618A2
公开(公告)日：2007-01-11
申请号：PCT/US2006025598
申请日：2006-06-30
申请人： UNIV CALIFORNIA , YANG YANG , CHU CHIH-WEI , LI SHENG-HAN
发明人： YANG YANG , CHU CHIH-WEI , LI SHENG-HAN
IPC分类号： H01L51/00
CPC分类号： H01L51/0525 , H01L21/31604 , H01L51/0052
摘要： An organic thin film transistor has a gate electrode, a gate insulator formed on the gate electrode, a layer of organic semiconducting material formed on the gate insulator, a source electrode formed on the layer of organic semiconducting material, and a drain electrode formed on the layer of organic semiconducting material. The source electrode and/or the drain electrode have a layer of transition-metal oxide formed on the organic semiconducting material and a layer of metal formed on the layer of transition-metal oxide. A method of producing an organic thin film transistor includes providing a gate electrode, forming a gate insulator on the gate electrode, forming a layer of semiconducting material on the gate insulator, forming a source electrode on the layer of organic semiconducting material, and forming a drain electrode on the layer of organic semiconducting material. Forming the source electrode and/or forming the drain electrode include forming a layer of transition-metal oxide on the organic semiconducting material and forming a layer of metal on the layer of transition-metal oxide.
摘要翻译：有机薄膜晶体管具有栅电极，形成在栅电极上的栅极绝缘体，形成在栅极绝缘体上的有机半导体材料层，形成在有机半导体材料层上的源电极和形成在栅极绝缘体上的漏电极有机半导体材料层。源电极和/或漏极具有形成在有机半导体材料上的过渡金属氧化物层和形成在过渡金属氧化物层上的金属层。制造有机薄膜晶体管的方法包括提供栅电极，在栅电极上形成栅极绝缘体，在栅极绝缘体上形成半导体材料层，在有机半导体材料层上形成源电极，并形成有机半导体材料层上的漏电极。形成源电极和/或形成漏极包括在有机半导体材料上形成过渡金属氧化物层并在过渡金属氧化物层上形成金属层。

4. 发明申请

WO2011075728A3 A SIMPLE ROUTE FOR ALKALI METAL INCORPORATION IN SOLUTION-PROCESSED CRYSTALLINE SEMICONDUCTORS 审中-公开
标题翻译：溶液加工晶体半导体中碱金属纳入简单路线
公开(公告)号：WO2011075728A3
公开(公告)日：2011-10-06
申请号：PCT/US2010061323
申请日：2010-12-20
申请人： UNIV CALIFORNIA , YANG YANG , HOU WEI-JEN , LI SHENG-HAN , TUNG CHUN-CHIH
发明人： YANG YANG , HOU WEI-JEN , LI SHENG-HAN , TUNG CHUN-CHIH
IPC分类号： H01L21/205
CPC分类号： H01L21/02551 , H01L21/02568 , H01L21/02628 , H01L31/0322 , H01L31/0725 , H01L31/0749 , H01L31/18 , Y02E10/541
摘要： A precursor solution for producing a semiconductor includes at least one of an alkali metal or an alkali metal compound dissolved in a solvent, and a metal chalcogenide dissolved in the solvent. A method of producing a precursor solution for producing a semiconductor includes preparing a first precursor solution that has at least one of an alkali metal or an alkali metal compound dissolved in a first solvent, preparing a second precursor solution that has a metal chalcogenide dissolved in a second solvent, and combining the first and second precursor solutions to obtain the precursor solution for producing the semiconductor. A method of producing a semiconductor device includes providing a precursor solution for producing a semiconductor layer on a substructure, and forming a layer of the precursor solution on the substructure. The precursor solution includes at least one of an alkali metal or an alkali metal compound dissolved in a solvent, and a metal chalcogenide dissolved in the solvent.
摘要翻译：用于制造半导体的前体溶液包括溶解在溶剂中的碱金属或碱金属化合物和溶解在溶剂中的金属硫属元素化物中的至少一种。生产用于生产半导体的前体溶液的方法包括：制备第一前体溶液，其具有溶解在第一溶剂中的碱金属或碱金属化合物中的至少一种;制备第二前体溶液，其具有溶解在第一溶剂中的金属硫属元素化物第二溶剂，并且合并第一和第二前体溶液以获得用于生产半导体的前体溶液。一种制造半导体器件的方法包括：提供用于在子结构上制造半导体层的前体溶液，以及在该子结构上形成前体溶液层。前体溶液包括溶解在溶剂中的碱金属或碱金属化合物中的至少一种以及溶解在溶剂中的金属硫族化合物。

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