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1. 发明专利

JP2001118827A PARALLEL PLATE REACTIVE ION ETCHING SYSTEM 失效
公开(公告)号：JP2001118827A
公开(公告)日：2001-04-27
申请号：JP29363299
申请日：1999-10-15
申请人： ULVAC CORP , KYOCERA CORP
发明人： OSONO MASA , IKEDA HITOSHI , KIKUCHI MASASHI , TAKEI HIDEO , INOMATA YOSUKE , FUKUI KENJI , SHIRASAWA KATSUHIKO
IPC分类号： H01L21/302 , C23F4/00 , H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a parallel plate reactive ion etching system which can etch a solar battery substrate with an etching distribution of ±10% in a batch. SOLUTION: In a parallel plate reactive ion etching system, a matching box housing a matching circuit is positioned under a cathode assembly accessory mechanism attached to the external wall surface of a cathode-side vacuum chamber, within an extent containing the center axis line passing through a cathode and an anode, so that an earthing route may become symmetrical with respect to a substrate on the cathode.

2. 发明专利

JP2001144079A PLASMA TREATMENT DEVICE 失效
公开(公告)号：JP2001144079A
公开(公告)日：2001-05-25
申请号：JP2000145487
申请日：2000-05-17
申请人： ULVAC CORP
发明人： TAKEI HIDEO , ISHIKAWA MICHIO , OTA YOSHIFUMI , KIKUCHI MASASHI , IKEDA HITOSHI , OSONO MASA
IPC分类号： H05H1/46 , C23C16/509 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a multiple-electrode type plasma treatment device wherein a multiplicity of plasma generating spaces can be formed in a vacuum chamber. SOLUTION: In the plasma treatment device according to the present invention, an anode electrode which is connected to a ground potential and controls a discharge space is disposed in the central portion in a vacuum chamber. A plurality of high-frequency electrodes are disposed on both sides of this anode electrode as opposed to the anode electrode. The high-frequency electrodes are connected to a common high-frequency power source via their respective vacuum capacitors or LC circuits and a common matching circuit network.

3. 发明专利

JP2001144069A PLASMA ETCHING APPARATUS FOR FILM-SHAPED SUBSTRATE 失效
公开(公告)号：JP2001144069A
公开(公告)日：2001-05-25
申请号：JP2000145532
申请日：2000-05-17
申请人： ULVAC CORP
发明人： TAKEI HIDEO , ISHIKAWA MICHIO , OTA YOSHIFUMI , KIKUCHI MASASHI , IKEDA HITOSHI , OSONO MASA
IPC分类号： H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method and apparatus for plasma-etching film-shaped substrates capable of avoiding the problem associated with thermal expansion of the film-shaped substrates and further controlling their profile while preventing undercut. SOLUTION: This method for plasma-etching a film-shaped substrate is such that the film-shaped substrate is held on a cathode electrode by an electrostatically sucking electrode and a mechanical clamping means through a clearance between the film-shaped substrate and the mechanical clamping means, and such that a mixed gas having fluorine-containing halogen gas mixed with O2 and N2 is used as an etching gas. Further, this etching apparatus comprises an electrostatically sucking electrode and a mechanical clamping means on a cathode electrode, and uses a mixed gas having fluorine-containing halogen gas mixed with O2 and N2. The electrostatically sucking electrode electrostatically sucks and holds the film-shaped substrate, and the mechanical clamping means holds the periphery of the film-shaped substrate, which is electrically sucked and held on the electrostatically sucking electrode, through a clearance with respect to the film-shaped substrate.

4. 发明专利

JPH08203986A VACUUM PLASMA TREATMENT EQUIPMENT 失效
公开(公告)号：JPH08203986A
公开(公告)日：1996-08-09
申请号：JP2585095
申请日：1995-01-20
申请人： ULVAC CORP
发明人： KIKUCHI MASASHI , IKEDA HITOSHI , OSONO MASA
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/677 , H01L21/68
摘要： PURPOSE: To shorten the exchange time of substrates and improve the working efficiency of the whole device, by equipping a process chamber with a plurality of retaining pins movable in the up and down direction which independently retain the substrates mounted on each multistage constitution of the hand of a carrying arm. CONSTITUTION: A charge substrate taking-out chamber 2 accommodates many substrates 1 on several stages and is linked to a carriage chamber 4 via a gate valve 3, which chamber is linked to a process chamber 6 via a gate valve 5. A conveying arm 7 which is capable of expansion, contraction, and rotation is installed in the carriage chamber 4. A hand 8 is constituted as two stages 8a, 8b which can mount the substrates 1 keeping an interval in the vertical direction. A pair of counter electrodes 9a, 9b are arranged in the process chamber 6. A plurality of retaining pins 10, 11 capable of moving in the up and down direction are installed in the process chamber 6, and can retain independently the substrates mounted on the respective stages 8a, 8b of the hand 8 of the arm 7.

5. 发明专利

JPH042775A MAGNETRON SPUTTERING SOURCE 失效
公开(公告)号：JPH042775A
公开(公告)日：1992-01-07
申请号：JP10623390
申请日：1990-04-19
申请人： ULVAC CORP
发明人： ONO SHINICHI , OSONO MASA , SAITO HIROSHI
IPC分类号： C23C14/35
摘要： PURPOSE:To enhance utilization efficiency of a target by lengthening both an annular yoke and an auxiliary yoke to the position higher than the surface of a target while keeping the interval between the end face of the target and the yokes and overlapping the end part of the auxiliary yoke on the end part of the target. CONSTITUTION:A yoke 24a is buried in the center of the rear part of a target 23 provided on a packing plate 22. This yoke 24a and an annular yoke 24b surrounding it are magnetically connected with the yoke of an electromagnet 27 in the rear part of the plate 22. An auxiliary yoke 25 is fitted to the yoke 24b. Plasma is generated by the magnetic field formed in the space in the vicinity of the surface of the target 23. This target 23 is sputtered by the ions incorporated therein. In this device, the yokes 24b and/or 25 are lengthened to the position higher than the surface of the target 23 while keeping the interval between the end face of the target 23 and the yokes. The end part of the yoke 25 is overlapped on the surface of the target 23. Thereby when the target 23 is not magnetically saturated, a magnetic field is formed between the yokes 24b and 25 and the target 23 and high-density plasma is generated and the target 23 is sputtered in a wide range.

6. 发明专利

JP2001140085A PLASMA TREATING SYSTEM 失效
公开(公告)号：JP2001140085A
公开(公告)日：2001-05-22
申请号：JP2000145470
申请日：2000-05-17
申请人： ULVAC CORP
发明人： TAKEI HIDEO , ISHIKAWA MICHIO , OTA YOSHIFUMI , KIKUCHI MASASHI , IKEDA HITOSHI , OSONO MASA
IPC分类号： H05H1/46 , C23C16/509 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma treating system capable of reducing the number of matching circuit nets and high frequency exiting power sources to be used as small as possible while maintaining the characteristic functions of the device regardless of the number of high frequency electrodes provided in a vacuum chamber. SOLUTION: Each of plural respective electrodes provided in a vacuum chamber is connected with a vacuum capacitor or an LC circuit and is connected to a common high frequency power source via a common matching circuit net.

7. 发明专利

JP2001077091A PLASMA PROCESSING DEVICE 失效
公开(公告)号：JP2001077091A
公开(公告)日：2001-03-23
申请号：JP24990499
申请日：1999-09-03
申请人： ULVAC CORP
发明人： TAKEI HIDEO , ISHIKAWA MICHIO , OTA YOSHIFUMI , KIKUCHI MASASHI , IKEDA HITOSHI , OSONO MASA
IPC分类号： H01L21/302 , C23C16/505 , C23F4/00 , H01L21/205 , H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To avoid a high-frequency interference which occurs between adjacent high-frequency electrodes so as to prevent a hunting phenomenon by a method wherein partitioning members which demarcate plasma generating spaces respectively are provided inside a vacuum chamber. SOLUTION: A partitioning member 6 of meshes or punching metal is provided between adjacent high-frequency electrodes 2 and at an outward edge of electrodes 2 located at the ends of a row of electrodes 2. The partitioning members 6 demarcates a plasma generating space between the high-frequency electrode 2 and an anode electrode 3. The partitioning members 6 are connected to a ground potential so as to reduce a potential induced by high-frequency plasma to an irreducible minimum. By this setup, the partitioning members are permeable to gas but substantially restrain plasma, which is generated in the plasma generating spaces demarcated by them combined with the high-frequency electrodes 2, from leaking out, and a high-frequency interference between the adjacent high-frequency electrodes 2 can be avoided, so that a hunting phenomenon can be prevented from occurring.

8. 发明专利

JPH09272129A CLEANING DEVICE OF VULCANIZING MOLD 失效
公开(公告)号：JPH09272129A
公开(公告)日：1997-10-21
申请号：JP8255996
申请日：1996-04-04
申请人： BRIDGESTONE CORP , ULVAC CORP
发明人： OKUBO YOSHIHIRO , SAIDA JOJI , OSONO MASA , KIKUCHI MASASHI , YOSHIOKA NOBUHIRO , KAWAMURA HIROAKI , TAKEI HIDEO , KURODA TAKAHIRO
IPC分类号： B29C33/72 , B08B7/00 , B29C35/02 , B29K21/00
摘要： PROBLEM TO BE SOLVED: To apply plasma only to residuum parts formed on a vulcanizing mold without accompanying abnormal discharge by a method wherein an electrode, on the outer peripheral surface side of which a large number of small reactive gas jetting holes are provided, under the state being cooled is opposite one and all to the inner peripheral surface of the vulcanizing mold and, in addition, inserting materials and shieldings are properly arranged. SOLUTION: A reactive gas introducing pipe 10 open in the outside hollow part 9 of an electrode 4 is arranged, while the feed pipe 11 and the delivery pipe 12 of cooling medium open in the inside hollow part 8 of the electrode 4 are arranged for forcibly feeding and circulating cooling medium. The outside surface of an electric power feed pipe 7 is covered with an insulator 13 and the upper and lower surfaces of the electrode 4 are also covered with insulators 14 15 and, at the same time, an insulator 16, which covers the upside surface of a vulcanizing mold 6 at the distance slightly apart from its upside surface, is provided. Further, the outside surface of insulators 13, 14 and 16 are covered with shielding materials 17, 18 and 19. Furthermore, a tubular shielding material 20, which extends downwards from the outer and edge of the shielding material 19 locating above the upside surface of the vulcanizing mold 6 so as to enclose the outer peripheral surface of the vulcanizing mold 6, is provided.

9. 发明专利

JPH09104981A CASSETTE 失效
公开(公告)号：JPH09104981A
公开(公告)日：1997-04-22
申请号：JP28461495
申请日：1995-10-05
申请人： ULVAC CORP
发明人： OSONO MASA , ODAGI HIDEYUKI
IPC分类号： C23C14/56
摘要： PROBLEM TO BE SOLVED: To provide a vacuum treating device capable of correctly and exactly positioning and placing circuit boards even if the circuit boards are rapidly supplied by the arms of a robot without increasing a cost. SOLUTION: Both side edges on the inner side facing each other of a frame 95 of a cassette are provided with positioning blocks 93a, 93b, 94a, 94b and 95a, 95b respectively making pairs and horizontal planes 100, 102 on the same level are respectively formed. Slopes 101, 103 inclining upward are formed outside the frame 95 of the cassette in successive connection thereto. The circuit boards detached from the arms of the robot glide on the slopes 101, 103 and are correctly positioned and placed on the horizontal planes 100, 102.

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