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1. 发明专利

DE4008119A1 Cathode sputtering electromagnet control 未知
公开(公告)号：DE4008119A1
公开(公告)日：1990-09-20
申请号：DE4008119
申请日：1990-03-14
申请人： ULVAC CORP
发明人： TAKEI HIROMICHI , SUWA HIDENORI , ONO SHINICHI , TSUKAKOSHI OSAMU
IPC分类号： C23C14/35 , H01J37/34
摘要： The electromagnet for a magnetron-cathode sputtering system at the rear of a target has a central core, a bottom yoke and an oval peripheral yoke. The direction of the electric current through the central coil is the same as through the inner peripheral coil, but that in the outer peripheral coil is changed periodically from the same to the opposite direction.

2. 发明专利

DE3941502A1 未知
公开(公告)号：DE3941502A1
公开(公告)日：1990-06-21
申请号：DE3941502
申请日：1989-12-15
申请人： ULVAC CORP
发明人： SUWA HIDENORI , ONO SHINICHI , HIRANO HIROYUKI , NARUSE HUMIO
IPC分类号： C23C14/56 , H01L21/00
摘要： A loading and unloading airlock apparatus for a vacuum treatment chamber which includes an airlock chamber, a transport mechanism inside the chamber to transport a substrate holder arranged to have substrates detachably mounted thereon, an exhaust port to evacuate the chamber to a vacuum, a gas inlet port to introduce a gas to bring the evacuated chamber back to atmospheric pressure, a rectifying plate provided in the chamber adjacent to and at a predetermined distance away from the substrate holder on that side of the substrate holder upon which the substrates are detachably mounted, and a gas introduction pipe having a gas ejection outlet in said chamber for introducing additional gas in a space defined by the predetermined distance to flow along the surfaces of the substrates and the substrate holder.

3. 发明专利

DE4008119C2 未知
公开(公告)号：DE4008119C2
公开(公告)日：1993-10-14
申请号：DE4008119
申请日：1990-03-14
申请人： ULVAC CORP
发明人： TAKEI HIROMICHI , SUWA HIDENORI , ONO SHINICHI , TSUKAKOSHI OSAMU
IPC分类号： C23C14/35 , H01J37/34 , H01F7/18 , H01F7/08 , H05H1/46
摘要： The electromagnet for a magnetron-cathode sputtering system at the rear of a target has a central core, a bottom yoke and an oval peripheral yoke. The direction of the electric current through the central coil is the same as through the inner peripheral coil, but that in the outer peripheral coil is changed periodically from the same to the opposite direction.

4. 发明专利

JPH06209156A SUBSTRATE HEATING DEVICE 失效
公开(公告)号：JPH06209156A
公开(公告)日：1994-07-26
申请号：JP19910092
申请日：1992-07-01
申请人： ULVAC CORP
发明人： SUDO SATORU , KUROKAWA KUNIAKI , MORI KATSUHIKO , SHIMIZU YASUO , ICHIYAMA MASAHIRO , ONO SHINICHI , OGATA HIDEYUKI
IPC分类号： B23K1/008 , B23K3/04 , H05B3/20 , H05B3/62 , H05K3/34
摘要： PURPOSE:To provide a substrate heating device of a structure, wherein the emissivity of the surface of a heater case can be improved without deforming the heater case, the temperature of a heating unit insulated electrically from the case can be made low and the life of the heating unit can be made long. CONSTITUTION:When a current is introduced in a sheathed heater 12 through a current introducing part 16, the heater 12 generates heat and the heat is efficiently transferred to a heater case 11 formed by superposing two case materials made of high-density carbon. As the emissivity of the surface of the case 11 is about 1, a heat transfer to a substrate is efficiently conducted. Moreover, as the amount of deformation of the case 11 itself is little, a stable heating to the substrate becomes possible.

5. 发明专利

JPH0617253A VACUUM TREATMENT DEVICE 失效
公开(公告)号：JPH0617253A
公开(公告)日：1994-01-25
申请号：JP19909992
申请日：1992-07-01
申请人： ULVAC CORP
发明人： MORI KATSUHIKO , KUROKAWA KUNIAKI , OGATA HIDEYUKI , SHIMIZU YASUO , ICHIYAMA MASAHIRO , ONO SHINICHI , SUDO SATORU
IPC分类号： C23C16/50 , C23C16/505
摘要： PURPOSE:To improve the thickness distribution and film quality of a thin film formed on a substrate by disposing the substrate within a vacuum chamber so as to face a driving discharge electrode. CONSTITUTION:The vacuum chamber 1 of this vacuum treatment device is internally provided with an external electrode 2 projecting in a projecting shape. This external electrode 2 is provided freely slidably with the driving discharge electrode 8. The driving discharge electrode 8 is maintained at the same potential as the potential of the external electrode 2. The substrate 7 is disposed within the vacuum chamber 1 so as to face the driving discharge electrode 8. Plasma is generated by the discharge between the driving discharge electrode 8 and the substrate 7 and the thin film is formed on the substrate 7 by this plasma. As a result, the discharge distance between the driving discharge electrode and the substrate changes when the driving discharge electrode is moved. The condition of generating the plasma is changed correspondingly.

6. 发明专利

JPH05251259A 失效
公开(公告)号：JPH05251259A
公开(公告)日：1993-09-28
申请号：JP4925592
申请日：1992-03-06
申请人： MATSUSHITA ELECTRIC IND CO LTD , ULVAC CORP
发明人： SHIMAMOTO MASASHI , RYUZAKI SHIGERU , TAKADA YUSUKE , UKISHIMA YOSHIYUKI , ONO SHINICHI , MASUDA YUKIO
IPC分类号： C23C14/04 , H01G4/06 , H01G4/12 , H01G4/30 , H01G4/33
摘要： PURPOSE:To enable a small thin film multilayer capacitor of high capacity to be manufactured high in productivity at a low cost by a method wherein different evaporation masks are used for the formation of a dielectric body and an electrode, and the side of the evaporation mask coming into contact with an evaporation source is set smaller than the other side in dimensions. CONSTITUTION:Al is evaporated on a substrate by sputtering using a stainless steel evaporation mask 4a whose side in contact with an evaporation mask source is set smaller than other side in dimensions for the formation of a lower electrode 2a. An SiO2 thin film dielectric 3a is evaporated thereon using a different mask 4b, and furthermore an Al electrode is evaporated thereon using a different mask 4c by sputtering. At this point, the evaporation mask 4b and 4c of stainless steel are 0.05mm-1mm in the same thickness as that of the mask 4a, and the sides of them in contact with an evaporation source are set smaller than the other sides in dimension by a length of 20-50mum.

7. 发明专利

JPH04323362A FORMATION OF MULTILAYER FILM AND ITS FORMING DEVICE 失效
公开(公告)号：JPH04323362A
公开(公告)日：1992-11-12
申请号：JP8836691
申请日：1991-04-19
申请人： ULVAC CORP
发明人： UKISHIMA YOSHIYUKI , ONO SHINICHI , MASUDA YUKIO
IPC分类号： C23C14/06 , C23C14/24 , C23C14/56 , H01L21/31 , H01L21/312
摘要： PURPOSE:To form a multilayer film at an optional position on a substrate at the time of vapor-depositing the multilayer film on the substrate in a vacuum chamber by arranging a mask of specified shape on the substrate surface and vapor-depositing materials from plural sources through the openings of the mask. CONSTITUTION:The vaporization sources 3-6 provided respectively with shutters 14-16 are arranged in a vacuum chamber 1, and the substrate 1 is opposed to the sources. The sources 3-6 are heated to the respective vaporizing temps. by an electron beam 7 or a heater 8, the shutters 14-16 are successively and separately opened to successively form the films of the materials from the sources 3-6 on the substrate 9. In this case, an inclined face at an angle increasing toward the substrate is provided on the front surface of the substrate 9, a mask 13 pierced with the openings 12 having a shape conforming to that of the film to be formed on the substrate 9 is arranged, the materials X, Y, Z and X are vapor-deposited on the substrate 9 from different angles through the mask 13, and the film of the sources 3-6 is efficiently formed at the optional position of the substrate 9.

8. 发明专利

JPH03191063A CONTINUOUS TYPE SPUTTERING DEVICE 失效
公开(公告)号：JPH03191063A
公开(公告)日：1991-08-21
申请号：JP33235089
申请日：1989-12-20
申请人： ULVAC CORP
发明人： NAGASAWA SHOJI , HIRANO HIROYUKI , ONO SHINICHI
IPC分类号： C23C14/56
摘要： PURPOSE:To prevent the inflow of gases to a film forming treatment section and to prevent the degradation in film quality by providing a differential pressure mechanism to drop the pressure in a 2nd heating section in the device having a charging section, a heating chamber and the film forming treatment section having the 2nd and 3rd heating sections. CONSTITUTION:A substrate 18 is charged together with a substrate holder 19 into the charging chamber 11 and is heated by a heater 11a; thereafter, the substrate is sent into the heating chamber 12 and is subjected to degassing by a heater 12a in the 1st heating section. The substrate is in succession sent into a process chamber 13 where the substrate is heated by a heater 13a and a heater 13b of the 2nd and 3rd heating sections in this order; thereafter, the film is formed by sputtering on the substrate 18 in the film forming treatment chamber 13c. The substrate is then sent into a take-out chamber 14. A partition plate 20 which is the differential pressure mechanism is provided between the heater 13a and heater 13b of this process chamber 13 and an aperture 21 is formed therein. The inside of the process chamber 13 is evacuated to a vacuum by a vacuum pump 17c. The inflow of the gases generated from the substrate 18 and the holder 19 at the time of heating the substrate 18 with the heater 13b into the film forming treatment chamber 13c is obviated in this way and the formation of the thin film is not adversely affected.

9. 发明专利

JPH0621195A BOARD HOLDER CONVEYER 失效
公开(公告)号：JPH0621195A
公开(公告)日：1994-01-28
申请号：JP19910392
申请日：1992-07-01
申请人： ULVAC CORP
发明人： KUROKAWA KUNIAKI , ONO SHINICHI , MORI KATSUHIKO , SHIMIZU YASUO , ICHIYAMA MASAHIRO , SUWA HIDENORI , SUDO SATORU , OGATA HIDEYUKI
IPC分类号： B23Q7/00 , B25J15/06 , H01L21/677 , H01L21/68
摘要： PURPOSE:To provide a board holder conveyer with which boards held by two respective board holders can be subjected to treatments such as film forming, etching or heating under identical or different conditions. CONSTITUTION:Two carriers 12a and 12b which travel on rails are provided and board holders 16a and 16b which hold boards are attached to the respective carriers and a connection link which can couple the two carriers or the two board holders with each other or release them from the coupling is provided.

10. 发明专利

JPH02243761A METHOD FOR CONTROLLING ELECTROMAGNET FOR MAGNETRON SPUTTERING SOURCE 失效
公开(公告)号：JPH02243761A
公开(公告)日：1990-09-27
申请号：JP6266289
申请日：1989-03-15
申请人： ULVAC CORP
发明人： TAKEI HIROSANE , SUWA HIDENORI , ONO SHINICHI , TSUKAGOSHI OSAMU
IPC分类号： C23C14/35 , H01J37/34
摘要： PURPOSE:To improve the utilization efficiency of a target by periodically changing only the electric current to be applied to a central coil and an inner peripheral coil. CONSTITUTION:A central yoke 2b and a peripheral yoke 2c are projected upward from a bottom yoke 2a. The central coil 3a is provided around the central yoke 2b, the inner peripheral coil 3b on the inner periphery of the peripheral yoke 2c and an outer peripheral coil 3c around the outer periphery are provided respectively. The electromagnet 4 thus formed is set on the rear of the target 5. The electromagnet for a magnetron sputtering source is controlled to form a magnetic field close to the surface of the target 5. The currents to be applied to the central coil 3a and inner peripheral coil 3b are allowed to flow in the same direction, and only the current to be applied to the outer peripheral coil 3c is periodically changed. As a result, the whole region of the target is uniformly sputtered.

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